Charge density wave transport in submicron antidot arrays in NbSe3

We demonstrate for the first time that a periodic array of submicrometer holes (antidots) can be patterned into thin single NbSe₃ crystals. We report on the study of Charge Density Wave (CDW) transport of the network of mesoscopic units between antidots. Size of the elementary unit can be as small as 0.5 μm along the chain axis and in cross-section. We observe size effects for Ohmic residual resistance and in CDW transport current-voltage characteristics in submicronic networks. Received: 25 November 1997 / Received in final form: 30 March 1998 / Accepted: 6 April 1998     

Interaction of both charge density waves in NbSe3 from interlayer tunneling experiments

An interlayer tunneling technique has been used for spectroscopy of charge density wave (CDW) energy gaps (Δ_1,2) in NbSe₃ subsequently opened at the Fermi surface on decreasing temperature at T _p1 = 145 K (CDW1) and at T _p2 = 60 K (CDW2). We found that the CDW2 formation is accompanied by an increase of the CDW1 gap below T _p2. The maximum enhancement of Δ₁, δΔ₁ is about 10%. The effect observed has been predicted theoretically as resulting from the joint phase locking of both CDWs with the underlying crystalline lattice below T _p2. The text was submitted by the authors in English.     

Tunable charge density wave in TiS_3 nanoribbons

Recently, modifications of charge density wave(CDW) in two-dimensional(2D) show intriguing properties in quasi-2D materials such as layered transition metal dichalcogenides(TMDCs). Optical, electrical transport measurements and scanning tunneling microscopy uncover the enormous difference on the many-body states when the thickness is reduced down to monolayer. However, the CDW in quasi-one-dimensional(1D) materials like transition metal trichalcogenides(TMTCs) is yet to be explored in low dimension whose mechanism is likely distinct from their quasi-2D counterparts.Here, we report a systematic study on the CDW properties of titanium trisulfide(TiS_3). Two phase transition temperatures were observed to decrease from 53 K(103 K) to 46 K(85 K) for the bulk and 15-nm thick nanoribbon, respectively,which arises from the increased fluctuation effect across the chain in the nanoribbon structure, thereby destroying the CDW coherence. It also suggests a strong anisotropy of CDW states in quasi-1D TMTCs which is different from that in TMDCs.Remarkably, by using back gate of-30 V ～ 70 V in 15-nm device, we can tune the second transition temperature from110 K(at-30 V) to 93 K(at 70 V) owing to the altered electron concentration. Finally, the optical approach through the impinging of laser beams on the sample surface is exploited to manipulate the CDW transition, where the melting of the CDW states shows a strong dependence on the excitation energy. Our results demonstrate TiS_3 as a promising quasi-1D CDW material and open up a new window for the study of collective phases in TMTCs.     

Joint density of states and charge density wave in 2H-structured transition metal dichalcogenides

The joint density of states of two different 2H-structured transition metal dichalcogenides (TMDs) with and without charge density wave (CDW), Na_0.05TaS₂ and Cu_0.09NbS₂, respectively, are compared. While there is a clear maximum at the 3×3 charge density wavevector for Na_0.05TaS₂, the joint density of states for Cu_0.09NbS₂ does not show such behavior, consistent with the absence of CDW in the system. Our results illustrate that the joint density of states well represents the charge instability in 2D systems.     

Energy gap of a charge density wave in NbSe3 induced by a high magnetic field above the Peierls transition temperature

The effect of a magnetic field on the energy gap of the charge density wave (CDW) in NbSe₃ near the temperature T _p2 of the lower Peierls transition has been investigated using interlayer tunneling spectroscopy. It has been shown that the magnetic field increases the energy gap and can even induce it at temperatures higher than T _p2 by 15–20 K. As the field strength increases, the peak amplitude of the gap singularity of the tunneling spectrum first increases, reaches its maximum at 20–30 T, and then decreases. The increase in the gap peak amplitude is attributed to the field-induced improvement of the condition of the CDW nesting, while the decrease in the amplitude in high fields, to the breakdown of the ground state caused by its Zeeman splitting.     

Resistivity anisotropy and charge density wave in 2H - NbSe2 and 2H - TaSe2

The in-plane and out-of-plane resistivities of both 2H-TaSe₂ and 2H-NbSe₂ were determined down to 10 K. For both compounds, the resistivity anisotropy shows notably a slope change at temperatures where a CDW transition is expected to occur. On the other hand, for both compounds the resistivity anisotropy at the lowest temperature of measurement is much greater than expected by the Lawrence–Doniach model, which relates the critical magnetic field anisotropy to the normal state resistivity anisotropy for 3D-anisotropic superconductors.     

Sliding-induced decoupling and charge transfer between the coexisting Q1 and Q2 charge density waves in NbSe3

Using high-resolution x-ray scattering in the presence of an applied current, we report evidence for a dynamical decoupling between the two NbSe3 charge-density waves (CDWs), Q1 (T(C1)=145 K) and Q2 (T(C2)=59 K), coexisting below T(C2). Simultaneous and oppositely directed shifts of the relevant CDW superlattice spots develop above a threshold current which we identify as the depinning threshold I(C1) for the more strongly pinned upper CDW Q1 (I(C1) approximately 10I(C2)). In contrast with shifts induced by current conversion processes, the present effect is not current polarized and is not limited to the current-contact regions. We propose a model which explains this instability through a sliding-induced charge transfer between the two electronic reservoirs corresponding to the Q1 and Q2 CDWs.     

Finite temperature spectral function of Mott insulators and charge density wave states

We calculate the low-temperature spectral function of one-dimensional incommensurate charge density wave states and half filled Mott insulators. At T=0 there are two dispersing features associated with the spin and charge degrees of freedom, respectively. We show that already at very low temperatures (compared to the gap) one of these features gets severely damped. We comment on implications of this result for photoemission experiments.     

Mesoscopic charge density wave in a magnetic flux

The stability of a Charge Density Wave (CDW) in a one-dimensional ring pierced by a Aharonov-Bohm flux is studied in a mean-field picture. It is found that the stability depends on the parity of the number N of electrons. When the size of the ring becomes as small as the coherence length , the CDW gap increases for even N and decreases for odd N. Then when N is even, the CDW gap decreases with flux but it increases when N is odd. The variation of the BCS ratio with size and flux is also calculated. We derive the harmonics expansion of the persistent current in a presence of a finite gap. Received: 16 September 1997 / Received in final form: 12 November 1997 / Accepted: 13 November 1997     

Electrical instability in quasi-one-dimensional charge density wave conductors

Narrow-band noise in niobium triselenide and similar substances is proposed to be a consequence of a negative differential dielectric constant which has been observed at field strengths larger than the threshold field. A small-signal theory is presented which yields the observed proportionality between frequency and charge density wave current. The calculation is independent of any model for the conduction and polarization mechanisms.     

Non-linear conductivity of one-dimensional charge density wave

A pure system with one-dimensional CDW placed in a homogeneous electric field is considered. Non-linear effects are found to appear due to motion of a soliton superstructure. The dependence of the differential conductivity on the electric field is calculated.     

Local atomic structure and discommensurations in the charge density wave of CeTe3

The local structure of in the incommensurate charge density wave (IC-CDW) state has been obtained using atomic pair distribution function analysis of x-ray diffraction data. Local atomic distortions in the Te nets due to the CDW are larger than observed crystallographically, resulting in distinct short and long Te-Te bonds. Observation of different distortion amplitudes in the local and average structures is explained by the discommensurated nature of the CDW, since the pair distribution function is sensitive to the local displacements within the commensurate regions, whereas the crystallographic result averages over many discommensurated domains. The result is supported by STM data. This is the first quantitative local structural study within the commensurate domains in an IC-CDW system.     

High frequency conductivity in the charge density wave semiconductor TaS3

We report the observation of frequency dependent conductivity σ (ω) in the charge density wave (CDW) semiconductor TaS₃. Based on σ (ω) and other evidences, we sugest that three different temperature regions occur in this compound: 1-D fluctuating CDW region above T_MI, a coherent CDW state below T_MI, and a CDW glass state at low temperatures.     

On the nonlinear charge density wave conductivity of TaS3

The conductivity of the charge-density-wave semiconductor TaS₃ is shown to consist of temperature dependent ohmic, and field dependent but temperature independent, contributions at temperatures below the Peierls transition T_P = 215 K. The field dependent conductivity can be described by a tunneling formalism proposed by Bardeen.