Experimental discovery of the anisotropy of phonon-plasmon modes in GaAs/AlAs(100) superlattices

Doped (n-type) GaAs/AlAs superlattices with thicknesses of the GaAs and AlAs layers from 1.7 to 6.8 Å and 13.6 Å, respectively, have been studied by means of Raman spectroscopy. The use of a microattachment for Raman backscattering studies has allowed for the observation of the modes with the wave vector directed both across and along the superlattice layers (in the scattering from the side face of the superlattice). The theoretically predicted anisotropy of mixed phonon-plasmon modes caused by the anisotropy of the electron effective mass in the type II superlattices has been experimentally discovered.     

Anomalous behavior of phonons in NbCu metallic superlattices

Brillouin and Raman scattering investigations have been performed on NbCu metallic superlattices. Anomalies have been observed in the surface acoustic phonons and bulk acoustic phonons versus superlattice wavelength. These anomalies occur simultaneously at the same superlattice wavelength ≈ 19 Å.     

On the correction of errors in quantum cryptography systems

The Raman and photoluminescence spectra of short-period C/SiC superlattices produced by RF magnetron sputtering are investigated. The Raman data indicate that, in 35-period Sitall/Ni/[C/SiC] superlattices with the C and SiC effective thicknesses of 3.5 and 3 Å, respectively, subjected to postgrowth avalanche annealing, the carbon layers assume the structure of multilayer graphene with 3–5 graphene sheets per superlattice period. A method for the fabrication of graphene-like carbon structures on the basis of short-period superlattices grown by RF sputtering is suggested and implemented.     

197Au Mössbauer study of Au/Ni and Au/Fe metallic superlattices

¹⁹⁷Au Mössbauer measurements have been performed for Au/Ni and Au/Fe metallic superlattices at below 75 K. For Au/Ni superlattices, the area ratio in a spectrum between a superlattice component and that of the pure Au buffer layer has been determined at 25, 50 and 75 K. From the area ratios, it is found that the recoil-free fraction of Au in Au(10 Å)/Ni(10 Å) is larger than that of the bulk Au, suggesting the existence of the supermodulus effect in this superlattice. The¹⁹⁷Au Mössbauer spectrum obtained from Au(5 Å)/Fe(8 Å) is entirely magnetic at 16 K, suggesting the existence of a magnetic hyperfine interaction at¹⁹⁷Au nuclei through the transferred electron spin polarization.     

Interface corrugation effect on the polarization anisotropy of photoluminescence from (311)A GaAs/AlAs short-period superlattices

Studying GaAs/AlAs superlattices containing a quantum-well-wire array revealed photoluminescence polarization anisotropy for samples with GaAs layers less than 21 Å thick. It was found that polarization for a thickness of more than 40 Å was mainly due to valence band anisotropy, whereas polarization for a thickness of less than 21 Å was equally attributable to both valence band anisotropy and anisotropy associated with interface corrugation. For a GaAs layer thickness of less than 21 Å, a blueshift of the Γ electron-Γ heavy hole transition was observed. In this transition, the position of the peak of photoluminescence from the GaAs/AlAs (311)A superlattices containing a quantum-well-wire array is shifted toward higher energies compared to the (311)B and (100) superlattices containing no quantum-well wire with the same GaAs layer thickness. The conclusion was made that a blueshift is observed in GaAs/AlAs superlattices with GaAs layers less than 21 Å thick and a red-shift is observed when the thickness is larger than 43 Å.     

Exciton spectra of semiconductor superlattices in a parallel magnetic field

Low-temperature photoluminescence and photoluminescence excitation spectra of GaAs/AlGaAs semiconductor superlattices having different potential barrier widths (b=20, 30, 50, and 200 Å), i.e., degrees of tunnel coupling between quantum wells, are studied in magnetic fields up to 5 T oriented parallel and perpendicular to the layers of the structure. The changes in the qualitative character of the photoluminescence excitation spectra observed in a parallel magnetic field with increasing tunnel transparency of the barrier correspond to a transition from a quasi-two-dimensional to a quasi-three-dimensional electronic spectrum as a miniband develops in the superlattice. In the photoluminescence excitation spectra of the superlattice with b=50 Å, as the parallel magnetic field is increased, a new line appears in the violet wing of the spatially indirect exciton excitation line, which is absent in a perpendicular field. A similar line was also observed to arise in the photoluminescence spectra. It is shown that the indirect exciton luminescence line can be suppressed by both parallel and perpendicular magnetic fields.     

Engineering coercivity in YFe<Subscript>2</Subscript> dominated DyFe<Subscript>2</Subscript>/YFe<Subscript>2</Subscript> superlattice by patterning

Single crystal 400 nm thick Laves phase [20 Å?DyFe₂/80 Å?YFe₂]₄₀ superlattice have been grown by MBE with a (110) growth direction. VSM measurements performed at room temperature with an applied field range of ±1.2×10⁵ Oe, directed along the [001] direction, reveal a unique single-phase-liked ferrimagnetic behavior. A dominant exchange spring behavior is revealed by MOKE measurement along the [–110] direction. Furthermore, for striped arrays patterned along the [001] direction with height-to-width ratio of 0.05, a shape anisotropy of the order of 10⁴ erg/cm³ is induced, resulting into a pronounced change of coercivity due to the comparable magnitude with intrinsic anisotropies. The results demonstrate the feasibility of engineering both single-phase-liked and exchange-spring magnet behavior in Laves phase epitaxial hard/soft superlattices by patterning.     

Raman spectroscopy of BaTiO3/(Ba,Sr)TiO3 superlattices

A series of BaTiO₃/Ba_{1 ? x} Sr _x TiO₃ (BT/BST) superlattices were prepared by pulsed laser deposition on MgO substrates with a constant period of 80 Å (40 Å BT and 40 Å BST) and varying compositions of the BST layer so that the Ba/Sr concentration ratios were 0/100, 30/70, 40/60, 50/50, 60/40, 70/30, 100/0. The soft mode E(1TO) of the polarized Raman spectra transformed depending on the Ba/Sr ratio in the BST layer. As the Sr concentration in the BST layers increased from 0 to 100%, the E(1TO) soft mode half-width varied from 171 to 103 cm^?1 and its frequency increased from 31 to 109 cm^?1 due to the interaction between the epitaxial layers forming the superlattices.     

Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

The effect of interface anisotropy on the electronic structure of InAs/GaSb type-II superlattices is exploited in the design of thin-layer superlattices for mid-IR detection threshold. The design is based on a theoretical envelope function model that incorporates the change of anion and cation species across InAs/GaSb interfaces, in particular, across the preferred InSb interface. The model predicts that a given threshold can be reached for a range of superlattice periods with InAs and GaSb layers as thin as a few monolayers. Although the oscillator strengths are predicted to be larger for thinner period superlattices, the absorption coefficients are comparable because of the compensating effect of larger band widths. However, larger intervalence band separations for thinner-period samples should lead to longer minority electron Auger lifetimes and higher operating temperatures in p-type SLs. In addition, the hole masses for thinner-period samples are on the order the free-electron mass rather than being effectively infinite for the wider period samples. Therefore, holes should also contribute to photoresponse. A number of superlattices with periods ranging from 50.6 to 21.2 Å for the 4 μm detection threshold were grown by molecular beam epitaxy based on the model design. Low temperature photoluminescence and photoresponse spectra confirmed that the superlattice band gaps remained constant at 330 meV although the period changed by the factor of 2.5. Overall, the present study points to the importance of interfaces as a tool in the design and growth of thin superlattices for mid-IR detectors for room temperature operation.     

Electronic transport in Mo/Ni superlattices

An experimental relationship between superconductivity, magnetism and localization is explored in short-wavelength (14Å ? ? ? 40Å) sputtered Mo/Ni superlattices. A crossover to a superconducting state is observed for ? < 9Å consistent with the observed paramagnetic behavior when the Ni strata are four atomic layers thick, or less. All samples show localization effects at helium temperatures and non-superconducting samples develop an unusual resistance plateau below T ? 0.5K.     

Raman scattering from GaAs-InxGa1−xAs strained-layer superllatices

Measurements of Raman scattering were performed on GaAs-In_xGa_1?xAs strained-layer superlattices, grown by molecular beam epitaxy, with lattice periods ranging from 30 ～ 250 Å and In concentrations x, 0.22 and 0.37. Only one GaAs-like longitudinal optical phonon peak was observed in each strained-layer superlattice, in contrast to the well-known result that two peaks were observed in GaAs-Al_xGa_1?xAs superlattices. The GaAs-like phonon frequencies shifted from those of bulk GaAs to those of bulk In_xGa_1?xAs alloys as the ratio of the one-layer thickness of In_xGa_1?xAs to the lattice period increases from zero to one. We conclude that the GaAs-like phonon mode is a uniform mode of the whole strained-layer superlattice and the phonon frequency is determined by the averaged In concentration.     

Plasmon-polariton modes and optical properties of metallic superlattices

The plasmon-polariton modes in metallic superlattices are studied using coupled hydrodynamic and electromagnetic equations. At spatial periods of the order of 1000Å, we find important influences of the artificial superlattice modulation on the dispersions, which have interesting implications on the optical properties. We also find anisotropic behavior in the study of helicon modes in the presence of a static magnetic field.     

A coupled Raman-Brillouin study of direct and folded acoustic modes in long-period GaAsAlAs superlattices

The frequency and intensity of direct acoustic modes (Brillouin lines) and folded acoustic modes are investigated in superlattices of period ≅ 500 Å as a function of the scattering wave vector. Both LA and TA polarizations are observed. The existence of folded acoustic modes at frequency lower than the Brillouin line is pointed out for scattering wave vectors larger than the first Brillouin-zone edge. We also emphasize the “anomalous” intensity behaviour of the different modes which is explained by an improved theory which takes into account the modulation of the acoustical and optical layer properties in the superlattice.     

Magnetooptical,optical, and magnetotransport properties of Co/Cu superlattices with ultrathin cobalt layers

We investigated the field dependences of the magnetization and magnetoresistance of superlattices [Co(t _x, Å)/Cu(9.6 Å)]30 prepared by magnetron sputtering, differing in the thickness of cobalt layers (0.3 Å ≤ t _Co ≤ 15 Å). The optical and magnetooptical properties of these objects were studied by ellipsometry in the spectral region of hω= 0.09–6.2 eV and with the help of the transverse Kerr effect (hω= 0.5–6.2 eV). In the curves of an off-diagonal component of the tensor of the optical conductivity of superlattices with t _Co = 3–15 Å, a structure of oscillatory type (“loop”) was detected in the ultraviolet region, resulting from the exchange splitting of the 3d band in the energy spectrum of the face-centered cubic structure of cobalt (fcc Co). Based on magnetic experiments and measurements of the transverse Kerr effect, we found the presence of a superparamagnetic phase in Co/Cu superlattices with a thickness of the cobalt layers of 3 and 2 Å. The transition from superlattices with solid ferromagnetic layers to superparamagnetic cluster-layered nanostructures and further to the structures based on Co and Cu (t _Co = 0.3–1 Å) with a Kondo-like characteristics of the electrical resistivity at low temperatures is analyzed.     

Role of beryllium doping in strain changes in II-type InAs/GaSb superlattice investigated by high resolution X-ray diffraction method

We have studied the influence of the beryllium doping on strain in the II-type InAs/GaSb superlattices (SLs) by means of high-resolution X-ray diffraction (HRXRD). Three analyzed superlattices were grown by molecular beam epitaxy. One of the examined superlattices was undoped. Two others structures, called doped SLs, composed of two superlattices: Be-doped and undoped which were grown one on the top of each other. The doping concentration was determined by secondary ion mass spectroscopy. The doping level was 1×10¹⁷ cm^?3 and 2×10¹⁹ cm^?3. For doped superlattices, the HRXRD measurements showed splitting of satellite (ST) peaks. Furthermore, the separation of ST peaks increase with doping level. In contrast, for undoped superlattice, the splitting of the ST peaks was not observed. Sometimes the separation of ST peaks can be caused by change of thickness period of superlattice or partial relaxation of the structure. However, we claim that in our experiment the splitting is caused by another mechanism: The presence of Be atoms in SL causes the change of average lattice constant of the superlattice. The influence of Be dopant on lattice parameter of superlattice was confirmed by theoretical simulations. Furthermore, the change of the lattice constant (Δa/a) of the GaSb:Be buffer was examined. The reduction of lattice parameter of GaSb was noticed. It was caused by the presence of Be doping and unintentionally incorporated As-atoms in the GaSb layer. It is very important to know that even very small Be concentration (1×10¹⁷ cm^?3) causes the change of average lattice parameter of SL.     

Structural state of III nitride layers implanted with erbium ions

The defect structure of AlGaN/GaN superlattices and GaN layers grown through vapor-phase epitaxy from organometallic compounds is investigated using x-ray diffraction analysis before and after implantation with erbium ions at an energy of 1 MeV and a dose of 3 × 10¹⁵ cm^?2, as well as after annealing. For a superlattice with a total thickness larger than the implantation depth, the satellites of the superlattice region strained under the action of ions disappear in the x-ray diffraction pattern after annealing at temperatures higher than 900°C. This suggests that the radiation-induced defects responsible for the positive deformation in the layer are annealed at these temperatures. However, annealing even at a temperature of 1050°C does not lead to complete recovery of the initial state and the positive deformation in the remaining regions is caused by residual defects. An analysis of the x-ray diffraction patterns demonstrates that, in samples with thin superlattices located at the depth corresponding to maximum radiation damage, the periodic structure that disappears after implantation at a dose of 3 × 10¹⁵ cm^?2 is not recovered even after annealing at a temperature of 1050°C. This inference is confirmed by the results of examinations with an electron microscope.     

HgTe/CdTe superlattices grown by molecular beam epitaxy

In this paper we present results concerning the optical absorption in HgTe-CdTe superlattices. We confirm the narrowing of the superlattice band-gap (the increase of cut-off wavelength, λ_c) compared to the band gap of the equivalent Hg_1?xCd_xTe alloy. We show also, as predicted by the theory, an increase of the cut-off wavelength of the superlattice when the HgTe layer thickness increases. At 300K, the agreement between theory and experiment is fairly good if we consider the onset of the absorption. The λ_c tail shifting towards shorter wavelengths could be explained by the interdiffusion between HgTe and CdTe layers. At 30K, no important change in the I.R. absorption is noticed for all the superlattices.We present for the first time a superlattice exhibiting an absorption in the 8–12 μm window.We have carried out Hall measurements on several superlattices and present for the first time transport properties on these alternate microstructures. The most important features concern the unexpected and not yet understood very high hole mobilities at 10K.     

Co-existence of long- and short-range magnetic correlations in holmium-erbium superlattices

The effect of competing crystal-field anisotropies on magnetic order has been investigated in a series of Ho/Er superlattices using a combination of x-ray and neutron scattering techniques. For temperatures in the interval T_N(Er)≤T≤T_N(Ho) the Ho basal-plane order propagates coherently through the paramagnetic Er over a typical length scale of 1000 Å. At low temperatures the Ho moments retain their bulk-like helical configuration, whereas the magnetic structure in the Er blocks has both basal-plane and c-axis components. Below T_N(Er), the coherence length of the basal-plane order decreases on cooling, while the longitudinal component of the Er moments fails to order across the Ho block. It is argued that these results require an extension of current models of indirect exchange in superlattices to explicitly include the superlattice band structure.     

Resonant tunneling in double superlattice barrier heterostructures

We have investigated resonant tunneling in double barrier heterostructures in which the tunnel barriers have been replaced by short period superlattices, and have shown for the first time quantum well confinement in a single quantum well bounded by superlattices. These results also demonstrate the first utilization of short period binary superlattices as effective tunnel barriers to replace the conventional Al_xGa_1−xAs barriers. The superlattice structure does not exhibit the asymmetry around zero bias in the electrical characteristics normally observed in the conventional Al_xGa_1−xAs barrier structures, suggestive of reduced roughness at the inverted interface by superlattice smoothing. The superlattice barrier also exhibits an anomalously low barrier height. The performance of this symmetric superlattice structure is compared with an intentionally constructed asymmetric double barrier superlattice structure, which exhibits pronounced asymmetry in the electrical characteristics. The observed behavior supports the view that resonant enhancement occurs in the quantum well.     

Momentum redistribution times of 2D excitons measured by transient resonantly induced intersubband absorption

We apply a transient interband-pump–intersubband-probe technique, to directly measure the time it takes for resonantly photoexcited excitons in GaAs/AlGaAs superlattices to redistribute in momentum space. We determine the redistribution time and its excitation density and superlattice periodicity dependence from the temporal evolution of the conduction intersubband absorption spectrum.We find that resonantly excited heavy-hole excitons, at moderate densities, redistribute slowly and reach thermal distribution within a few tens of ps after the pulsed excitation. This redistribution time is nearly inversely proportional to the square root of the initial density of the photoexcited excitons and it depends on the periodicity of the superlattice structure. The smaller the periodicity in direct space is, the longer is the redistribution time. This is due to the relatively inefficient exciton–exciton scattering, and the small momentum that each resonantly excited exciton carries. From measurements performed on three samples of different periodicity we find that the redistribution time increases faster than the superlattice Brillouin-zone length squared.