Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate

The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron density of the interlayer silicide is found to be 2.02 e/?³ by specular X-ray reflectivity (XRR) measurements. X-ray diffraction (XRD) is used to investigate the growth of deposited Ni film on the buried ultra-thin silicide layer. The Ni film is found to be highly textured in an Ni(111) plane. The enthalpy of formation of the Ni/Si system is calculated using Miedema’s model to explain the role of amorphous interlayer silicide on the growth of textured Ni film. The local temperature of the interlayer silicide is calculated using enthalpy of formation and the average heat capacity of Ni and Si. The local temperature is around 1042 K if the interlayer compound is Ni₃Si and the local temperature is 1389 K if the interlayer compound is Ni₂Si. The surface mobility of the further deposited Ni atoms is enhanced due to the local temperature rise of the amorphous interlayer and produced highly textured Ni film. Received: 2 March 2000 / Accepted: 28 March 2000 / Published online: 11 May 2000     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

Transport properties of n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100)

Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr_2?xIn_xSe₄(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l0⁶A/m. The conductivity decreases rapidly near the Curie temperatureT_c (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near T_c. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10^?2 m²/V · s at 6.3 K, and decreases rapidly near T_c with the rise in temperature. Then it increases slowly from 5.5 × 10^?4 m²/V · s at 160 K to 7.5 × 10^?4 m²/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments.     

High temperature electron transport properties of AlGaN/GaN heterostructures with different Al-contents

Electron transport properties in AlGaN/GaN heterostructures with different Al-contents have been investigated from room temperature up to 680 K. The temperature dependencies of electron mobility have been systematically measured for the samples. The electron mobility at 680 K were measured as 154 and 182 cm²/V·s for Al_0.15Ga_0.85N/GaN and Al_0.40Ga_0.60N/GaN heterostructures, respectively. It was found that the electron mobility of low Al-content Al_0.15Ga_0.85N/GaN heterostructure was less than that of high Al-content Al_0.40Ga_0.60N/GaN heterostructure at high temperature of 680 K, which is different from that at room temperature. Detailed analysis showed that electron occupations in the first subband were 75% and 82% at 700 K for Al_0.15Ga_0.85N/GaN and Al_0.40Ga_0.60N/GaN heterostructures, respectively, and the two dimensional gas (2DEG) ratios in the whole electron system were 30% and near 60%, respectively. That indicated the 2DEG was better confined in the well, and was still dominant in the whole electron system for higher Al-content AlGaN/GaN heterostructure at 700 K, while lower one was not. Thus it had a higher electron mobility. So a higher Al-content AlGaN/GaN heterostructure is more suitable for high-temperature applications.     

Specific heat and velocity of sound in a moderate heavy-fermion compound YbZnCu4

The specific heat at a constant pressure (C _p) and the velocity of sound (v) are measured for a moderate heavy-fermion compound YbZnCu₄ in the temperature range 3.5–250 K and at 77 K, respectively. The experimental values of C _p and v obtained in this study and the phonon thermal conductivity previously measured in the temperature range 5–300 K are used to calculate the phonon mean free path l for this compound. The temperature dependence of the phonon mean free path l thus determined is characteristic of classical amorphous materials.     

Superconductivity in the intermetallic compound YRhAl

The intermetallic compound, YRhAl, has been prepared and is found to be isomorphic with RRhAl (R=Pr, Nd, Gd, Ho and Tm) compounds crystallizing in the orthorhombic TiNiSi-type structure (space group Pnma). Heat capacity and electrical resistivity measurements in the He-3 temperature range reveal that this compound is superconducting with a transition temperature, T_c, of 0.9 K. The electronic specific heat coefficient, γ, and the Debye temperature are found to be 6.1 mJ/mol K and 197 K, respectively. The specific heat jump at the superconducting transition is found to be consistent with the BCS weak-coupling limit. This combined with the earlier observation of superconductivity in LaRhAl (T_c=2.4 K) having a different structure than that of YRhAl, suggests that the underlying structure is not very crucial for the occurrence of superconductivity in RRhAl series of compounds.     

Electrical and seebeck effect measurements in Nb doped VO2

The resistance of pure and Nb doped VO₂ and the Seebeck coefficient of Nb doped VO₂ have been measured in the temperature range of 78–360 K. A simple analysis of the results shows that above 140 K and below the transition temperature the effective density of states in the conduction band of VO₂ is of the order of (but larger than) one state per vanadium atom. This high effective density of states is consistent with the large effective mass (and low mobility) of electrons in this material. It is shown also that in this range, the temperature dependence of the electronic mobility in VO₂ is T^?γ where γ ? 2. Additional results are discussed in the text.     

Electrical properties of novel Li4.08Zn0.04Si0.96O4 ceramic electrolyte at high temperatures

Novel Li_4.08Zn_0.04Si_0.96O₄ electrolyte was synthesized by citric acid-assisted sol–gel method. The compound was studied by X-ray diffraction and complex impedance spectroscopy in the frequency range from 10 Hz to 10 MHz and temperature range from 573 to 773 K. The conductivity–frequency spectra exhibited two regions of conductivity dispersion related to Li⁺ ion transport in the bulk and grain boundaries. The activation energy of the bulk conductivity was found to be equal to the activation energy of relaxation frequency in the bulk. This indicated that the increase in conductivity with temperature was due to the increase in ion mobility while the number of charge carrier concentration was found to be constant with selected temperature range. The observation was in agreement with the calculated charge carrier concentration and ion mobility derived from conductance spectra, σ _ac(ω)?=?σ _o ?+?Aω ^α .     

On the superconductivity of high-pressure phases in a potassium graphite intercalation compound C8K

New superconductive high-pressure phases are found in a stratified C₈K graphite-potassium compound in the baric processing range from 8 to 90 kbar. The dependence of critical temperature (T_c) on processing pressure (P) is complicated and non-monotonous, which may be attributed to the change in a compound stage.     

Thermopower of a moderate heavy-fermion compound YbZnCu4

The thermopower coefficients S of samples of a moderate heavy-fermion compound YbZnCu₄ and metallic LuZnCu₄ are measured in the temperature range 5–300 K. Data on the temperature dependence of the thermopower coefficient S of YbZnCu₄ suggest that this material is a heavy-fermion compound with a Kondo temperature of ～50 K.     

Infrared spectroscopy of the intermediate-valence semiconductor YbB12

The dynamic conductivity and permittivity spectra of the intermediate-valence compound YbB₁₂ are measured in the frequency range (6–10⁴) cm^?1 (quantum energy 0.75 meV-1.24 eV) at temperatures of 5–300 K. Analysis of the spectral singularities associated with the response of free charge carriers has made it possible for the first time to determine the temperature dependences of their microscopic parameters, viz., concentration, effective mass, relaxation frequency and time, mobility, and plasma frequency. It is shown that the relaxation frequency decreases upon cooling from 300 K to the coherence temperature T ^* = 70 K for YbB₁₂, which is mainly associated with the phonon mechanism of scattering of charge carriers. For cooling below the coherence temperature T ^* = 70 K, the temperature dependence of the relaxation frequency for charge carriers of the Fermi-liquid type is found to be γ ～ γ₀ + T ², while their effective mass and relaxation time increase, respectively, to m ^*(20 K) = 34m ₀ (m ₀ is the free electron mass) and τ(20 K) = 4 × 10^?13 s, indicating the establishment of coherent scattering of carriers from localized magnetic moments of the f centers. At a temperature of T = 5 K, the conductivity spectrum contains an absorption line at a frequency of 22 cm^?1 (2.7 meV); the origin of this line can be associated with the exciton-polaron bound state. Since such a state was observed earlier in other intermediate-valence semiconductors (such as SmB₆, TmSe_1?x Te, and (Sm, Y)S), it is probably typical of this class of compounds.     

Specific heat of the semiconducting layered compound SnSe2 at low temperatures

The specific heat of the layer compound semiconductor tin diselenide SnSe₂ has been measured in the temperature range from 2.7 to 280 K. In this range, the overall temperature dependence of the specific heat is dominated by the lattice contribution, which yields a limiting Debye characteristic temperature at absolute zero θ_D (0) = 140 ± 2K. The increase in the specific heat at low temperatures is more gradual than what would be expected for a simple Debye solid, and reflects the quasi-two dimensional layer structure of this compound.     

Synthesis and characterization of CaLaFe11O19

A new ferrimagnetic compound with the chemical formula CaLaFe₁₁O₁₉ has been synthesized by solid state reaction between the respective oxides and their structural, electrical and magnetic properties have been studied. One magnetic Fe³⁺ ion in CaLaFe₁₂O₁₉ is replaced by La³⁺ ion. The crystallographic results show the compound is hexagonal magnetoplumbite. The electrical conductivity has been measured from 300 to 800 K. The activation energy changes at Curie temperature (653 K). The compound is ferrimagnetic from 300 to 653 K and above T_c it acts as a paramagnetic. Variation of inverse molar susceptibility has been measured at various temperature in paramagnetic region and Curie molar constant (C_m) is calculated. AC susceptibility measurements are made at room temperature. The Seebeck coefficient (S) measurements show that the compound is n-type.     

Magnetic properties of the charge ordered Nd0.75Na0.25MnO3

Nd_0.75Na_0.25MnO₃ polycrystalline ceramic is prepared via sol-gel process and its magnetic properties and electron spin resonance (ESR) spectra have been investigated experimentally. As the compound is cooled from room temperature, a charge-ordered state first develops below 170 K. A high magnetic field melts the charge ordered state and stabilizes a ferromagnetic (FM) state below 170 K. A field induced transition, analogous to a spin flip transition, is observed between 40 and 170 K. The critical temperature for spin flip increases with increasing temperature. Below 130 K, the compound tends to be intrinsically inhomogeneous, i.e. FM clusters and paramagnetic domains coexist in this system at least, which is confirmed by ESR measurements. When the external magnetic field is zero, long range FM interaction is not developed in this system; however, a tendency of re-entrant FM transition is observed in this compound.     

The studies of high-temperature and short-time annealing,phase transition process,and magnetic property for LaFe11.7Si1.3 compound

The high-temperature phase transition is analyzed according to the DSC of as-cast LaFe_11.7 Si_1.3 compound and the X-ray patterns of LaFe_11.7Si_1.3 compounds prepared by high-temperature and short-time annealing. Large amount of 1:13 phase begins to appear in LaFe_11.7Si_1.3 compound annealed near the melting point of LaFeSi phase (about 1422?K). When the annealing temperature is close to the temperature of peritectic reaction (about 1497?K), the speed of 1:13 phase formation is the fastest. The phase relation and microstructure of the LaFe_11.7Si_1.3 compounds annealed at 1523?K (5?h), 1373?K (2?h)?+?1523?K (5?h), and 1523?K (7?h) +1373?K (2?h) show that longer time annealing near peritectic reaction is helpful to decrease the impurity phases. For studying the influence of different high-temperature and short-time annealing on magnetic property, the Curie temperature, thermal, and magnetic hystereses, and the magnetocaloric effect of LaFe_11.7Si_1.3 compound annealed at three different temperatures are also investigated. Three compounds all keep the first order of magnetic transition behavior. The maximal magnetic entropy change ΔS_M (T, H) of the samples is 12.9, 16.04, and 23.8?J?kg^?1?K^?1 under a magnetic field of 0–2?T, respectively.     

Electrical conduction in copper vanadate

A.C. and d.c. electrical conductivities, thermoelectric power and dielectric constant of copper vanadate (CuV₂O₆) have been measured in the temperature range 300–1000 K in order to discuss the electrical conduction in the compound. The extrinsic conduction, which takes place below 500 K, has been explained by small polaron hopping mechanism while intrinsic conduction, which takes place above 500 K, has been explained by large polaron band mechanism in view of the values of activation energy and charge carrier mobility in the temperature ranges 300–500 K and 500–1000 K.     

Semiconducting properties of CuIn5S8 single crystals I. Electrical properties

The electrical resistivity and Hall coefficient of n-type CuIn₅S₈ single crystals were measured in the temperature range from 80 K–500 K. The energy gap at 0 K was determined to be 1.4 eV. The donor levels at 0.017 eV and 0.09 eV below the conduction band are identified. The mobility data are analysed assuming scatterings by acoustic and polar optical phonons and ionized impurities.     

Mössbauer study of (NH4)2FeCl5·H2O

Mössbauer spectra of the compound (NH₄)₂FeCl₅·H₂O have been studied as a function of temperature. Two phase transitions are observed in the temperature range between 7 K and 9 K. The transition at 9 K is structural and presents an unusually high thermal hysteresis. AroundT=8 K the substance orders magnetically and different Fe³⁺ contributions are present.     

Two-dimensional electronic transport in In0.53Ga0.47As quantum Wells

Transport properties of the electrons itinerant two dimensionality in a square quantum well of In_0.53Ga_0.47As are studied in the framework of Fermi-Dirac statistics including the relevant scattering mechanisms. An iterative solution of the Boltzmann equation shows that the ohmic mobility is controlled by LO phonon scattering at room temperature, but below 130 K alloy scattering is predominant. The calculated mobilities with a suitable value of the alloy scattering potential agree with the experimental results over a range of lattice temperature. For lattice temperatures below 25 K where the carrier energy loss is governed by the deformation potential acoustic scattering, the warm electron coefficient is found to be negative. Its magnitude decreases with increasing lattice temperature and is greater for larger channel widths. Values of the small-signal AC mobility of hot electrons at a lattice temperature of 4.2 K are obtained for different sheet carrier densities and channel widths. Cut-off frequencies around 100 GHz are indicated.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Temperature evolution of the infrared spectrum of Ni(ClO4)2·6H2O

Temperature evolution of the infrared spectrum of the title compound confirms the phase transition temperatures 223, 311 and 355 K reported earlier and suggests a new phase transition at 180 K. From the spectral evidence, the transitions below the room temperature (～300 K) are attributed to tumbling motion of the metal aquo-complex, while those above the room temperature are attributed to reorientational motion of the water molecule. The space group in low temperature phases is suggested to be C²_s.