Organic-inorganic Hybrids Towards the Preparation of Nanoporous Composite Thin Films for Microelectronic Application

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Analysis of Low-k Organosilicon and Low-Density Silica Films Deposited in HMDSO Plasmas

Low-dielectric constant (low-k) films have been prepared by plasma-enhanced chemical vapor deposition from hexamethyldisiloxane (HMDSO). The films are analyzed by ellipsometry, infrared absorption spectroscopy while their electrical properties are deduced from C–V and I–V measurements performed on metal/insulator/silicon structures. First, it is shown that the carbon-containing silicon oxide films deposited in HMDSO and HMDSO/Ar plasmas have a dielectric constant equal to 3.0 ± 0.1 and are thermally stable at 400°C. The leakage current densities measured for an electric field of 1 MV/cm are less than 10^–9 A/cm² and the breakdown fields are in the range of 6–7 MV/cm. Then, a low-density silica film was obtained by exposing a film deposited in an HMDSO plasma to an O₂ plasma. The dielectric constant of this low-density silica film is 3.5 and its breakdown field is close to 6 MV/cm.     

Low Dielectric Constant Organosilicate Films Prepared by Sol-Gel and Templating Methods

Low dielectric constant organosilicate films with controllable microstructure have been successfully synthesized by multiple-step sol-gel process and templating method, which are the two basic methods to establish porous network in the films. Ultra-low dielectric constant (k) of around 2.0 can be achieved for both films. The microstructure such as porosity, pore interconnection and pore size of the two types of the films have been studied and compared. It has been found that the sol-gel films have a higher level of porosity comparing to the templating films to obtain the same k value. The sol-gel film has a majority of closed pores with pore size around 5 nm. The templating film has a closed pore structure with pore size around 10 nm. Preliminary results present a very positive prospective for intermetal dielectric applications.     

Low dielectric constant nanocomposite thin films based on silica nanoparticle and organic thermosets

Low dielectric constant (low-k) nanocomposite thin films have been prepared by spin coating and thermal cure of solution mixtures of one of two organic low-k thermoset prepolymers and a silica nanoparticle with an average diameter of about 8 nm. The electrical, the mechanical, and the thermomechanical properties of these low-k nanocomposite thin films have been characterized with 4-point probe electrical measurements, nanoindentation measurements with an atomic force microscope, and specular X-ray reflectivity. Addition of the silica nanoparticle to the low-k organic thermosets enhances both the modulus and the hardness and reduces the coefficient of thermal expansion of the resultant nanocomposite thin films. The enhancements in the modulus of the nanocomposite thin films are less than those predicted by the Halpin-Tsai equations, presumably due to the relatively poor interfacial adhesion and/or the aggregation of the hydrophilic silica nanoparticles in the hydrophobic organic thermoset matrices. The addition of the silica nanoparticle to the low-k organic thermoset matrices increases the relative dielectric constant of the resultant nanocomposite thin films. The relative dielectric constant of the nanocomposite thin films has been found to agree fairly well with an additive formula based on the Debye equation. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1482–1493, 2007     

Fluorinated compounds for advanced IC interconnect applications: a survey of chemistries and processes

The semiconductor industry is now in the early stages of an unprecedented change in materials set for the integrated circuit (IC) interconnect structure. The traditional layers of aluminum conductors and silicon dioxide dielectrics are being replaced by copper thin films and a variety of low k candidates, respectively. In many cases, fluorine confers desirable properties on either the precursors or the final films. At the same time, fluorine presents some potentially adverse effects, which have led to a so-called “fear-of-fluorine” in interconnect applications. This paper will review the proposed uses of fluorinated compounds in the interconnect structures, covering both precursors and the resulting thin films. Both the status of technical studies, and the prospects for commercial implementation, will be addressed.     

Dielectric and piezoelectric properties of dense and porous PZT films prepared by sol-gel method

PZT films with different microstructure and Zr:Ti ratios were fabricated on ITO/glass and platinized silicon wafer substrates by dip-coating. A dense film of 2% porosity and a porous film of 19% porosity were obtained by repetition of thin and thick coatings, respectively. Development of pores during heating the film was examined and heating process factors were investigated. In the film fabricated on ITO/glass substrates, an existence of non-perovskite and low permittivity layer was confirmed by measurement of film thickness dependence of the dielectric constant. Among the films studied, the film with molar composition of Ti:Zr = 5:5 exhibited the largest dielectric constant and apparent piezoelectric coefficient, d ₃₃, though the values were small. Apparent piezoelectric coefficients of d ₃₃ and g ₃₃ of the porous films were larger than those of the dense films.     

金属氧化物与现代微电子学:过渡金属前体化合物及转化为材料的化学过程

金属氧化物薄膜如HfO₂（被称为高k电介质）是现代微电子器件的关键组件,广泛用于计算机（平板电脑,笔记本电脑和台式机）、智能电话、智能电视、汽车和医疗设备中。具有大介电常数（k）的金属氧化物已经取代了介电常数小的SiO₂（k=3.9）,从而使得微电子元件进一步小型化。过渡金属化合物在化学气相沉积（CVD）和原子层沉积（ALD）中被广泛用作前体,通过与O₂、H₂O或O₃的反应生成金属氧化物薄膜。微电子金属氧化物膜是纳米材料最广泛应用的一个领域。本文概观该领域的最新进展,包括我们对d⁰过渡金属配合物与O₂反应的研究。     

金属氧化物与现代微电子学——过渡金属前体化合物及转化为材料的化学过程

金属氧化物薄膜如HfO₂（被称为高k电介质）是现代微电子器件的关键组件,广泛用于计算机（平板电脑,笔记本电脑和台式机）、智能电话、智能电视、汽车和医疗设备中。具有大介电常数（k）的金属氧化物已经取代了介电常数小的SiO₂（k=3.9）,从而使得微电子元件进一步小型化。过渡金属化合物在化学气相沉积（CVD）和原子层沉积（ALD）中被广泛用作前体,通过与O₂、H₂O或O₃的反应生成金属氧化物薄膜。微电子金属氧化物膜是纳米材料最广泛应用的一个领域。本文概观该领域的最新进展,包括我们对d⁰过渡金属配合物与O₂反应的研究。     

Pore size distributions in low‐k dielectric thin films from X‐ray porosimetry

X‐ray reflectivity has been used to determine the mass uptake of probe molecules in porous thin films supported on thick silicon wafers. The adsorption occurs by capillary condensation when the films are exposed to probe vapor at controlled partial vapor pressures. The probe solvent partial pressure was varied by mixing saturated air and dry air at constant temperature or by changing sample temperature at a constant vapor concentration. Pore size distribution in the films can be calculated from the probe uptake with typical porosimetric approaches such as the application of the Kelvin equation to convert partial pressure into pore size. For illustration, the pore size distribution of three different nanoporous thin films, the primary candidate of ultra‐low‐k interlevel dielectrics in the next generation of integrated circuit chips, was determined with this technique. These samples represent different generations of low‐k dielectrics developed by industry. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2170–2177, 2002     

Synthesis and characterization of fluorinated benzoxazole polymers with high Tg and low dielectric constant

Next generation microelectronic packaging requirements are driving the need to produce increasingly lower dielectric constant materials while maintaining high thermal stability and ease of processing. Efforts have focused on the synthesis and analysis of new polymers with the goals of high thermal stability [degradation temperature (T_d) > 400 °C, low glass‐transition temperature (T_g) > 350 °C], low water uptake (<1%), solubility in selected organic solvents, dielectric constant less than 2.5, and low thermal expansion coefficient. These stringent combined goals have been largely achieved with flexible aromatic benzoxazole polymers. Intramolecular hydrogen bonding between pendant hydroxyl groups and the double‐bond nitrogen of the benzoxazole has been exploited to increase the polymer T_g, whereas the incorporation of perfluoroisopropyl units effectively decreases the dielectric constant. Out‐of‐plane impedance measurements on films of materials in this family (38–134 μm thick) have resulted in typical dielectric values of 2.1–2.5 at 1 MHz, depending on copolymer ratios and functionalizations. Results have been correlated with optical waveguide measurements of films 4‐μm thick to determine film anisotropy and the high‐frequency dielectric constant, and have been corroborated by in‐plane interdigitated electrode dielectric measurements on samples 0.75 μm thick. Candidate materials exhibited extremely low water uptake (0.2%) even after submersion in boiling water for several days. Dynamic mechanical analysis of the polymers enabled the determination of the influence of intermolecular hydrogen bonding on the T_g and loss tangent magnitude. Finally, the coefficient of thermal expansion has been examined and correlated with copolymer constitution. © 2000 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 38: 1991–2003, 2000     

Dielectric study of hot-pressed nanocomposite polymer electrolytes

Ion-conducting nanocomposite polymer electrolyte films based on poly(ethylene oxide)-NaPO₃ 3: 1 with up to 15 wt % of SiO₂ have been prepared using recently developed hot-press technique instead of conventional solution cast method. With 7 wt % of SiO₂, the film conductivity has been enhanced by an order of magnitude. The materials have been characterized by Fourier transform infrared spectrometry and thermogravimetric analysis. For the composition with the highest conductivity, the temperature dependences of ionic mobility, mobile ions concentration, ionic transference number, and ionic drift velocity have been determined. Dielectric constant and dielectric loss have been measured. The conductivity enhancement has been discussed on the basis of existing theories of dielectrics.     

XPS analysis with external bias: a simple method for probing differential charging

The XPS spectra of thermally grown oxide layers on Si, Al, W and Hf substrates have been recorded while the samples were subjected to external d.c. voltage bias. The bias induces additional shifts in the measured binding energy differences between the XPS peaks of the oxide and that of the metal substrate in Si and Al (as probed both in the 2p and the KLL Auger regions), but not in W and Hf (as probed in the 4f region). These bias induced shifts are attributed to differential charging between the oxide layer and the substrate, which in turn is postulated to be related to the capacitance and inversely to the dielectric constant of the oxide layer. Accordingly, silicon dioxide with the smallest dielectric constant undergoes the largest differential charging, aluminium oxide is in the middle and no appreciable charging can be induced in the high‐k tungsten and hafnium oxides, all of which are ～6 nm thick. Copyright © 2004 John Wiley & Sons, Ltd.     

One-step fabrication of ultralow dielectric polyimide films consisting of size-controlled mesoporous nanoparticles

Dielectric materials with ultralow dielectric constants (<2.0) are desiderated in the integrated circuits (ICs). In this work, we fabricated polyimide (PI) films consisting of mesoporous nanoparticles (MPNPs-PF) through a one-step solvent evaporation induced self-assembly method. Poly(amic acid) was selected as the polymer matrix; and the commercial triblock copolymer F127 was adopted as the mesoporous template as well as the nanoparticle morphology controller, respectively. After imidization and template removal, the dense films consisting of closed-packed PI nanoparticles with an average diameter less than 50 nm were obtained. Since the nanoparticles were fully composed of worm-like mesopores, the dielectric constant (k value) of the resultant porous PI films can reach as low as 1.92. When the reactive end-capper of maleic anhydride (MA) was blended into poly(amic acid), k value decreased even lower to 1.86. Meanwhile, the modulus of the resultant porous PI films was higher than 1 GPa.     

Synthesis and optical properties of poly (vinyl acetate)/bismuth oxide nanorods

Poly (vinyl acetate) (PVAc) loaded bismuth oxide (Bi₂O₃) nanorods were successfully prepared at ambient pressure. X‐ray diffraction (XRD) and transmission electron microscopy were used to characterize the final product. It was found that Bi₂O₃ nanorods were formed and the diameter of the rods was confined to about 8 nm. The diameter and length of formed rods were found to increase by increasing the bismuth oxide concentration in the PVAc matrix. The optical properties of the nanocomposite films were characterized from the analysis of the experimentally recorded transmittance and reflectance data in the spectral wavelength range of 300–800 nm. The values of some important parameters of the studied films are determined such as refractive index (n), extinction coefficient (k), optical absorption coefficient (α), and band energy gap (E_g). According to the analysis of dispersion curves, it has been found that the dispersion data obeyed the single oscillator of the Wemple–DiDomenico model, from which the dispersion parameters and high‐frequency dielectric constant were determined. In such work, from the transmission spectra, the dielectric constant (ε_∞) and the third‐order optical nonlinear susceptibility χ⁽³⁾ were determined. Copyright © 2010 John Wiley & Sons, Ltd.     

Characterization of very low thermal conductivity thin films

Characterization of thermal transport in nanoscale thin films with very low thermal conductivity (<1 W m^?1 K^?1) is challenging due to the difficulties in accurately measuring spatial variations in temperature field as well as the heat losses. In this paper, we present a new experimental technique involving freestanding nanofabricated specimens that are anchored at the ends, while the entire chip is heated by a macroscopic heater. The unique aspect of this technique is to remove uncertainty in measurement of convective heat transfer, which can be of the same magnitude as through the specimen in a low conductivity material. Spatial mapping of temperature field as well as the natural convective heat transfer coefficient allows us to calculate the thermal conductivity of the specimen using an energy balance modeling approach. The technique is demonstrated on thermally grown silicon oxide and low dielectric constant carbon-doped oxide films. The thermal conductivity of 400 nm silicon dioxide films was found to be 1.2 W m^?1 K^?1, and is in good agreement with the literature. Experimental results for 200 nm thin low dielectric constant oxide films demonstrate that the model is also capable of accurately determining the thermal conductivity for materials with values <1 W m^?1 K^?1.     

Ion- Beam Modification of Peo Based Polymer Electrolytes

In this paper, we report the ion beam interaction with a well explored ion conducting polymer electrolyte, viz., polyethylene oxide complexed with sodium iodide (PEO:NaI). Li³⁺ ions at 50 MeV were bombarded on the film at different flux. The conductivity modulation of the films has been reported due to interaction at different fluence. The increase in the total conductivity is explained in terms of the change in the number of charge carriers and the dielectric constant of the polymer electrolyte films.     

Epitaxial oxide thin films by pulsed laser deposition: Retrospect and prospect

Pulsed laser deposition (PLD) is a unique method to obtain epitaxial multi-component oxide films. Highly stoichiometric, nearly single crystal-like materials in the form of films can be made by PLD. Oxides which are synthesized at high oxygen pressure can be made into films at low oxygen partial pressure. Epitaxial thin films of highT _c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, superconductor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications are presented. Future prospects of the method for fabricating epitaxial films of transition metal nitrides, chalcogenides, carbides and borides are discussed.     

Photo-Induced Hydrophilicity of TiO<Subscript>2</Subscript> Films Deposited on Stainless Steel via Sol-Gel Technique

The photo-induced hydrophilicity of TiO₂ films deposited on stainless steel substrates and silicon wafers using two different sol-gel routes has been investigated. The results indicate that crystalline titanium oxide films with excellent hydrophilic properties can be obtained on silicon wafer with both routes. XPS and XRD data reveal that films deposited on stainless steel exhibit crystallization features similar to those of films deposited on silicon wafers, and only differ by their oxidation degree owing to a TiO₂ reduction process associated to a diffusion of iron ions during deposition of the acidic sol and/or high temperature post-treatment. Consequently, hydrophilic properties of films deposited on stainless steel are inhibited. The deposition of a SiO_x barrier layer at the film/substrate interface allows preventing such a detrimental substrate influence. A low temperature deposition route of the TiO₂ film associated to the presence of a barrier layer yields best results in preventing iron contamination of the films.     

Composition-property relationships in high-κ LaxZr1-xOy thin films from aqueous solution

Miniaturization of microelectronic devices has reached a fundamental scaling limit; parasitic electron tunneling through the ultrathin gate dielectric has become a major obstacle to continued device performance. One method for overcoming this limitation is to replace SiO₂ gate dielectrics with thicker high-κ metal oxides. La₂O₃ and ZrO₂ are two such materials that have received significant interest, but low stability to post-anneal water absorption and low-crystallization temperatures, respectively, have limited their widespread use. We recently reported an aqueous, all-inorganic route to high-κ lanthanum zirconium oxide dielectric films (1/1 La/Zr), which mitigates the disadvantages of the binary oxides but maintains their high-κ properties. In this contribution, we vary the La/Zr ratio of the aqueous precursor to optimize the properties of the resulting films. We find that the La_0.20Zr_0.80O_y composition is optimal for providing a high dielectric constant (∼18.2 at 600 °C) while maintaining excellent film morphology and stability. 20% La was necessary to prevent crystallization up to 600 °C, but films with higher La content displayed diminished dielectric constants and decreased stability towards post-anneal water absorption.     

Preparation and characterization of nanoporous polyimide membrane by the template method as low‐k dielectric material

In order to decrease the resistance–capacitance delay and signal crosstalk in ultra large‐scale integrated circuits (ULSIC), dielectric materials with ultra low dielectric constants are developed to be the replacement of silicon dioxide. Introduction of air on the matrix material is an important method to reduce the dielectric constant, and polyimide (PI) is the most promising polymer to prepare porous matrix material for its distinct advantages. PI membrane with nanopores was prepared by the method of template method (i.e. thermolysis of polystyrene nanospheres in the matrix) following the synthesis of template. The nanoporous membrane was characterized by Fourier transformer infrared, scanning electron microscopy, thermogravimetric analysis, and the dielectric constant of which was measured. Results showed that uniform nanopores about 100–200 nm were formed in the PI membrane, and dielectric constant of which was decreased to 2.08 from 3.34. The nanoporous membrane can be applied as potential low‐k dielectric material in ULSIC. Copyright © 2015 John Wiley & Sons, Ltd.