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1.
用磁控溅射法制备了GdFeCo/DyFeCo交换耦合两层薄膜,对交换耦合两层薄膜变温磁化方向进行了研究.结果表明读出层GdFeCo随温度上升从平面磁化转变成垂直磁化,转变过程中主要受饱和磁矩(Ms)的影响.在GdFeCo的补偿温度附近,读出层的磁化强度近于零,退磁场能减小,并在交换耦合的作用下,使读出层的磁化方向发生转变,制备的交换耦合两层薄膜具有中心孔磁超分辨效应.
关键词:
磁光记录
交换耦合两层薄膜
磁化 相似文献
2.
用磁控溅射法制备了GdFeCo/TbFeCo交换耦合两层薄膜,利用不同温度的克尔磁滞回线和VSM磁滞回线研究了读出层(GdFeCo)变温磁化方向变化过程.结果表明,随温度升高读出层从平面磁化转变为垂直磁化,交换耦合两层薄膜具有中心孔探测磁超分辨的基本性能.转变过程主要受饱和磁化强度(Ms)的影响,在GdFeCo的补偿温度附近,读出层的磁化强度较小,退磁场能也较小,在交换耦合的作用下,使读出层(GdFeCo)的磁化方向发生转变.磁化方向的转变在75℃~125℃的温度范围内变化较快. 相似文献
3.
用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜.振动样品磁强计和克尔磁滞回线测试装置的测试结果表明:25℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层(GdFeCo)的极向克尔角为零,读出层呈平面磁化;125℃不加外场时读出层的克尔角最大(O.54°),读出层的磁化方向为垂直磁化;随着温度增高,读出层由平面磁化转变为垂直磁化,在75℃到125℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化.对磁化过程的机理研究表明:饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程,但主要受读出层饱和磁化强度的影响;在较高温度时读出层的磁化强度较小,退磁场能较小,在静磁耦合作用下,使GdFeCo读出层的磁化方向发生转变.制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD-MSR记录介质. 相似文献
4.
用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜。振动样品磁强计和克尔磁滞回线测试装置的测试结果表明 :2 5℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层 (GdFeCo)的极向克尔角为零 ,读出层呈平面磁化 ;12 5℃不加外场时读出层的克尔角最大 (0 .5 4°) ,读出层的磁化方向为垂直磁化 ;随着温度增高 ,读出层由平面磁化转变为垂直磁化 ,在 75℃到 12 5℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化。对磁化过程的机理研究表明 :饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程 ,但主要受读出层饱和磁化强度的影响 ;在较高温度时读出层的磁化强度较小 ,退磁场能较小 ,在静磁耦合作用下 ,使GdFeCo读出层的磁化方向发生转变。制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD MSR记录介质 相似文献
5.
亚铁磁材料因具有反铁磁排列的子晶格磁矩而表现出诸多丰富的物理性质,在磁信息存储和逻辑领域具有广阔的应用前景.本文采用磁控溅射方法在热氧化的硅基片上制备了Pt/GdFeCo(t)/Pt多层膜,系统研究了亚铁磁GdFeCo厚度对多层膜的表面形貌、结构、磁性以及反常霍尔效应(AHE)的影响.结构测试表明薄膜表面粗糙度较小,且GdFeCo层为非晶态;实验中利用GdFeCo层厚度可有效控制Gd元素含量,从而调控GdFeCo趋近反铁磁态特性的磁矩补偿点;通过重金属强自旋轨道耦合效应(SOC)和非晶态亚铁磁薄膜面内压应力,实现了良好垂直各向异性(PMA);进一步阐明了亚铁磁薄膜中磁性和反常霍尔效应的内在产生机制以及磁矩补偿点与温度的内在关系.这些结果为构建新一代低功耗自旋电子器件奠定基础. 相似文献
6.
使用飞秒时间分辨抽运-探测磁光Kerr光谱技术,实验研究了圆偏振光抽运面内磁化FePt和垂直磁化GdFeCo薄膜的磁化演化动力学,发现在时间延迟零点处均出现瞬态Kerr峰.分析了此Kerr峰的起源,指出此瞬态Kerr峰与铁磁性无关,可能起源于自由电子的顺磁磁化,而顺磁磁化的外磁场来自圆偏振抽运光的逆Faraday效应.基于顺磁磁化模型的计算结果支持此观点.基于此观点,逆Faraday效应感应的磁场脉冲宽度应该与激光脉冲宽度一致. 相似文献
7.
FePt合金薄膜由于具有较强的磁各向异性而在磁信息和磁光信息存储中具有重要的应用.C掺杂可精确调控薄膜的磁各向异性,从而可有效地改变薄膜的矫顽场.通过超短激光脉冲与铁磁薄膜相互作用,可以获得非平衡状态下电子、自旋和晶格等自由度之间的动态耦合参数,这是研究超快磁记录材料的物理基础.本文基于瞬态磁光Kerr效应,研究了两种C掺杂浓度下FePt薄膜的超快磁光响应.实验结果表明:瞬态Kerr信号与外加磁场正相关,磁场反向,Kerr信号反号,而瞬态反射率与外加磁场无关;不同C掺杂的FePt薄膜的矫顽场不同,软磁的退磁时间显著小于硬磁薄膜的退磁时间.我们还观测到超快激光在铁磁薄膜中诱导频率约为49 GHz的相干声学声子,该声子的频率与外加磁场无关.实验结果为设计和研制新型磁光薄膜提供了实验依据. 相似文献
8.
电流驱动的面内交换偏置场翻转具有无需外磁场辅助、抗磁场干扰以及强磁各向异性等优势,受到广泛关注.然而,在纳米级厚度薄膜系统中,反铁磁/铁磁异质结的阻塞温度较低,同时电流脉冲会产生大量的焦耳热,理论上电流热效应对于交换偏置场翻转有着显著作用,但是其作用机制缺乏相关研究和验证.我们制备了一系列反铁磁IrMn厚度不同的Pt/IrMn/Py异质结,系统性地研究了热效应在电流翻转交换偏置场中的作用机制.结果表明,在毫秒级电流脉冲下,焦耳热能够使得器件升温至阻塞温度以上,解除反铁磁/铁磁界面的交换耦合,同时电流产生的奥斯特场和自旋轨道矩能够翻转铁磁磁矩,在降温过程中完成交换偏置场的翻转.并且,在翻转过程中,反铁磁/铁磁异质结的各向异性磁阻曲线呈现与温度相关的两步磁化翻转现象,分析表明该现象起源于交换偏置耦合与铁磁直接交换作用之间的竞争关系.本文的研究结果厘清了热效应在电流驱动交换偏置场翻转过程中的重要作用,有助于推动基于电控交换偏置场的自旋电子器件发展. 相似文献
9.
采用一维原子链模型研究了反铁磁耦合的硬磁/软磁/硬磁三层膜体系的反磁化过程. 研究结果表明,当考虑了软磁层的磁晶各向异性能后,软磁层厚度和界面交换耦合强度的改变都有可能导致软磁层的交换弹性反磁化过程由可逆过程转变为不可逆过程. 对软磁层很薄的体系,其反磁化过程是典型的可逆交换弹性反磁化过程. 然而,当软磁层厚度超过某一临界厚度tc时,反磁化过程转变为不可逆的交换弹性反磁化过程. 软磁-硬磁界面交换耦合强度Ash对反磁化行为也有很大的影响. 对于软磁层厚度小于临界厚度tc的体系,也存在一个临界界面交换耦合强度Ashc. 当Ash大于Ashc时,软磁层的反磁化过程是可逆的交换弹性反磁化过程;而当Ash小于Ashc时,这一过程变为不可逆. 给出了体系的可逆与不可逆交换弹性反磁化过程随软磁层厚度和界面交换耦合强度变化的磁相图. 同时还研究了偏转场随软磁层厚度的变化关系.
关键词:
反铁磁耦合三层膜
交换弹性反磁化过程
反磁化机理
磁相图 相似文献
10.
11.
本文研究了Sm2(FeNiCoM)17合金(M为非磁性组元)的磁性。样品由六角结构无序型的2∶17主相及少量FeNi合金杂相组成。在六角结构的e轴方向(易磁化方向)观察到下述异常现象:低温(273K以下)时的磁化及反磁化曲线发生明显的跃变,跃变时相应的磁场Hr随温度下降而增大;磁滞迴线是蜂腰型的,温度愈低蜂腰愈明显;升温时磁化强度随温度变化(1.5K至居里点TC)的曲线上出现极大值,其相应的温度Tt随磁场增大而降低;降温时观察到了热磁滞后现象。但在基面(难磁化方向)上及Co含量增多(>18at%)时,样品却表现了正常的铁磁行为。本文提出用磁矩非共线结构排列的自旋再取向相变来解释上述异常现象,并给出自旋倒向所需越过的能垒高度U=9.2×10-15erg,用设想磁结构的模型得到的磁化强度的计算值与实验值也符合得较好。
关键词: 相似文献
12.
L. S. Uspenskaya I. V. Kurbatova G. Nurgaliev S. Miteva 《Bulletin of the Russian Academy of Sciences: Physics》2009,73(8):1110-1112
The kinetics of magnetization reversal of a thin LSMO film has been studied for the first time. It is shown that the magnetic
domain structure critically depends on the conditions of structure formation. In the demagnetized state (after zero-field
cooling from T
c
), a maze-like domain microstructure with perpendicular magnetization is formed in the film. However, after field cooling
and/or saturating magnetization by a field of arbitrary orientation, the [110] direction of spontaneous magnetization in the
film plane is stabilized; this pattern corresponds to macrodomains with in-plane magnetization. Further film magnetization
reversal (both quasi-static and pulsed) from this state is implemented via nucleation and motion of 180° “head-to-head” domain
walls. Upon pulse magnetization reversal, the walls “jump” at a distance proportional to the applied field strength and then
undergo thermally activated drift. All dynamic characterisitcs critically depend on the temperature when the latter varies
around the room temperature. 相似文献
13.
本文以ZnCl2, CrCl3. 6H2O和氨水缓冲溶液为原料, 在4T脉冲磁场下水热法制备了Cr掺杂ZnO稀磁半导体晶体, 通过X射线衍射分析、扫描电子显微镜观察及采用振动样品磁强计进行磁性分析等, 探讨了脉冲磁场对其微观结构及磁性能的影响. 结果表明: Cr掺杂ZnO稀磁半导体晶体仍保持ZnO的六方纤锌矿结构, 脉冲磁场具有促进晶粒生长及取向排列的作用, 4T脉冲磁场条件下合成的Cr掺杂ZnO稀磁半导体具有良好的室温铁磁性, 其饱和磁化强度(Ms)为0.068 emu/g, 而无脉冲磁场情况下制备的样品室温下呈顺磁性, 并且, 脉冲磁场下制备将稀磁半导体的居里温度提高了16 K. 相似文献
14.
A study of exchange bias phenomenon in ferrimagnetic /ferromagnetic FeGd/ FeSn bilayers is presented. The amorphous FeSn and FeGd alloys have been grown by co-evaporation. Specific growth conditions allow to induce an uniaxial anisotropy in both alloys in a parallel direction. After saturation of the bilayers under a positive field, the hysteresis loop of one of the layer is shifted towards a positive field H
E
. The sign of the exchange bias field H
E
is shown to be due to the antiferromagnetic coupling between the net magnetizations of both alloys. The field H
E
is studied as a function of the thickness of each layer and of the temperature. Using ac-susceptibility measurements and polarized neutron reflectometry, it is shown that the reversal of magnetization of the bilayers is dominated by the presence of a domain wall at the interface. This exchange bias system is shown to act as a potential well for the magnetic domain wall. Within this assumption and thanks to a precise magnetic characterization of each alloy, the evolution of H
E
with the thickness of the layers is well reproduced using simple one-dimensional analytical models for the domain wall or a more elaborate numerical approach.Received: 20 February 2003, Published online: 9 September 2003PACS:
75.60.Ch Domain walls and domain structure - 75.70.-i Magnetic properties of thin films, surfaces, and interfaces - 75.25.+z Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source X-ray scattering, etc.) 相似文献
15.
The effect of confinement from one, two or from all three directions on magnetic ordering has remained an active field of
research for almost 100 years. The role of dipolar interactions and anistropy are important to obtain, the otherwise forbidden,
ferromagnetic ordering at finite temperature for ions arranged in two-dimensional (2D) arrays (monlayers). We have demonstrated
that conventional low-temperature magnetometry and polarized neutron scattering measurements can be performed to study short-range
ferromagnetic ordering of in-plane spins in 2D systems using a multilayer stack of non-interacting monolayers of gadolinium
ions formed by Langmuir-Blodgett (LB) technique. The spontaneous magnetization could not be detected in the heterogeneous
magnetic phase observed here and the saturation value of the net magnetization was found to depend on the sample temperature
and applied magnetic field. The net magnetization rises exponentially with lowering temperature and then reaches saturation
following a T ln(βT) dependence. The T ln (βT) dependence of magnetization has been predicted from spinwave theory of 2D in-plane spin system with ferromagnetic interaction.
The experimental findings reported here could be explained by extending this theory to a temperature domain of βT<1. 相似文献
16.
Murtaza Bohra Shiva Prasad N. Venketaramani Naresh Kumar S.C. Sahoo R. Krishnan 《Journal of magnetism and magnetic materials》2009,321(22):3738-3741
Temperature dependence of the magnetic properties of magnetite thin film across the Verwey transition has been investigated. As the temperature is decreased, the magnetization of the film in a fixed field showed a sharp decrease close to the Verwey transition temperature (Tv). The M–H loops of the film have been recorded at various temperatures below and above Tv. It is found that film does not saturate at any temperature and saturation becomes more difficult below Tv. While cooling through Tv, the extrapolated value of magnetization to infinite field (Q), calculated from the numerical fit 4πM=Q [1−(H*/H)1/2], does not show a drop, but the coefficient indicating difficulty in saturation (H*) shows a sharp rise as does the coercivity. 相似文献
17.
Our magnetic measurements on a CuMn alloy reveal that Tm, the temperature of the susceptibility peak, is marked by a qualitative change in the magnetization-vs.-field behavior. The magnetization process at and above Tm is reversible at all fields, whereas below Tm an irreversibility sets in at a threshold field H1 and persists up to a second threshold field H2. The irreversibility results in an isothermal remanence whose saturation value (attained when the field removed exceeds H2) equals the saturation value of the thermoremanence (attained after cooling from above Tm in a field larger than H2). Both states of remenence are characterized by a magnetization which is completely reversed by a small reverse field but returns to its original polarity when the field is removed. The hysteresis loop remains thus displaced as long as the cycling field is less than H1. 相似文献
18.
研究了预先热磁处理对Ni503Mn287Ga21单晶的磁学和力学性能的影响.首先将样品加热到居里温度之上让其冷却,冷却方式分为两种:一种是施加一定大小的磁场从高于居里温度冷却至室温,另一种是在样品经历顺磁-铁磁相变后但还未发生奥氏体-马氏体相变前施加相同大小和方向的磁场并冷却至室温.室温时的拉伸-压缩实验结果表明单晶样品在经历前一种处理后,其可逆应变、磁化强度的变化 (ΔM)比后一种处理的相应值要小很多.在后一种热磁处理的样品中,顺磁-铁磁相变发生后形成了自发磁畴,但这种磁畴不具有择优取向.在顺磁-铁磁相变结束后施加磁场,容易导致择优的马氏体准单畴出现,从而表现出大的可逆应变和ΔM.但对于前者,我们认为样品从居里温度降到室温过程中,其中的磁畴在相同的磁场作用下获得择优生长,形成大磁畴,导致磁诱导的强各向异性.这种择优取向的大磁畴在随后马氏体相变期间影响着马氏体的自发排列方式,不利于马氏体准单畴的出现,结果导致较小的可逆应变和ΔM.
关键词:
磁和力学锻炼
Ni-Mn-Ga单晶
铁磁和马氏体相变 相似文献
19.
本文以Zn(CH3COO)2·2H2O, Mn(CH3COO)2·4H2O和氨水缓冲溶液为原料, 在4 T脉冲磁场下利用水热法制备了Mn掺杂ZnO稀磁半导体晶体, 通过X射线衍射、 扫描电子显微镜、透射电子显微镜、拉曼光谱、荧光分光光度计及振动样品磁强计等对样品的微观结构及磁性能等进行了表征, 结果表明: Mn掺杂ZnO稀磁半导体晶体仍保持ZnO六方纤锌矿结构, 4 T脉冲磁场下合成的Mn掺杂ZnO稀磁半导体晶体具有明显的室温铁磁性, 其饱和磁化强度(Ms)为0.028 emu/g, 比无脉冲磁场下制备的样品提高一倍以上, 且4 T 脉冲磁场将样品的居里温度提高了15 K. 相似文献
20.
在有效场理论和切断近似框架内,选择自旋S=1的二维方格子,研究横向随机晶场Ising模型的相图和磁化行为,重点是横向随机晶场浓度和晶场比率对相图和磁化的影响.给出了i>T-Dx空间的相图和m-T空间的磁化图.在晶场稀疏情况下,负晶场方向存在临界温度的峰值,正方向可出现重入现象.晶场比率取+0.5和-0.5时,磁有序相范围缩小,特别是晶场比率取-0.5时,随晶场浓度的降低,临界温度峰值从横向晶场负方向渡越到正方向.固定某一负晶场值,不同晶场比率的磁化行为有明显差异.同时与纵向稀疏晶场Ising模型结果进行有意义的比较.
关键词:
横向随机晶场Ising模型
相图
磁化行为 相似文献