Stimulated Raman scattering in three-dimensional photonic crystals

The results of experimental studies of stimulated Raman scattering of light (SRS) excited in three-dimensional photonic crystals — synthetic opal matrices infiltrated with Raman active media are presented. It is shown that the SRS threshold in such structures decreases with respect to the SRS threshold in Raman active bulk materials. The influence of the photonic-band structure of the active materials used on the SRS properties is estimated.     

Raman spectra and phase composition of MnGeO3 crystals

MnGeO₃ single‐crystal samples have been synthesized by optical zonal melting and spontaneous crystallization. X‐ray crystal analysis showed the first sample to be a two‐phase one with phase ratio as follows: 17% – monoclinic C2/c, and 83% – orthorhombic Pbca; the phase ratio of the second sample was unknown. Raman spectra have been produced for these samples. Lattice dynamics has been simulated and polarization dependencies of lines' intensities have been analyzed to interpret experimental Raman spectra and to attribute lines to the spectra of monoclinic and orthorhombic phases. Copyright © 2015 John Wiley & Sons, Ltd.     

Raman and Hyper-Rayleigh Scattering in Lithium Tetraborate Crystals

Experimental studies of Raman scattering and the infrared reflection spectra of lithium tetraborate crystals were carried out within a broad temperature range with various polarization geometries. The crystals studied are characterized by record values of radiation resistance, transparence within a broad spectral range including the ultraviolet region, and nonlinear optical properties. A group-theoretical analysis of the vibrational spectra of this crystal was performed and fundamental vibrational terms were assigned to the symmetry types of the point group as well as the polarizations of the corresponding modes. The effective Raman cross section was measured and was found to be one order of magnitude higher than those of the known crystals, in which the stimulated Raman scattering (SRS) was observed. The nonlinear optical and electrooptical coefficients were evaluated and were found to be consistent with the results of independent measurements. The effect of a drastic increase in the intensity of quasi-elastic light scattering at 253 K was registered. It was associated with the phase transition that consists of the disordering of lithium ions with respect to the rigid skeleton. The formation energy for Frenkel defects in the lithium sublattice and the activation energy of the ionic conduction when heating the sample were calculated from the obtained temperature dependences of the intensity of quasielastic and hyper-Rayleigh light scattering.     

椭球模型下通过雾场的多重光散射谱

由于雾滴的非球形、多重散射特性以及几何光学效应,光通过实际雾场的散射问题成为一个研究难点. 建立了近于实际的椭球雾滴模型,考虑光的衍射、透射及反射特性后,利用辐射传播方程得到了在不同的雾滴大小分布 及不同的雾滴形状分布下通过雾场的多重散射光强公式.在两种特例下与已有的结果较为相符,说明了方法的可靠性. 计算表明:与随机取向的非球形颗粒场的散射谱呈圆形特征不同,通过椭球形雾滴场的散射谱呈椭圆特征, 不同方位角的散射光强角分布有所差异,雾滴的形状因子越接近于1,差异越小;与单散射不同, 散射谱中的条纹随光学厚度增大逐步消失;对于不同大小分布及不同形状分布的雾滴场, 在不同方位角及不同观察角的散射光强随光学厚度τ的增加总是先增大再减小,光强的极大值位置在τ = 1.0---3.0 范围内.计算同时还表明,由于多数情况下实际雾场的雾滴大小偏差较大, 因而通过雾场的散射谱将呈现以中央亮斑为中心向四周弥散的图样.     

Random error of determining light scattering matrix elements at various polarization states of probing radiation

Using the method of mathematical modeling, we consider the transformation of a random error of light intensity measurement into an error of determining elements of the light scattering matrix. We consider a device in which the polarization properties of probing radiation change depending on the setting of the phase plate and polarization analysis of scattered radiation is performed while the second phase plate located ahead of a stationary analyzer is rotated. A set of settings of the first phase plate has been revealed, which provides a minimum random error in determining the scattered light matrix elements. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 520–523, July–August, 2000.     

光源的偏振态对动态光散射颗粒测量结果的影响

研究了在动态光散射纳米颗粒测量中,光源的偏振态对测量结果的影响。采用了粒径为100nm、体积浓度为0.5%的标准颗粒作为样品,使He-Ne激光通过起偏器得到0°～180°方向的偏振光,测量了散射光强、偏振度和粒径测量值的变化,计算了相应的粒径均值偏差和标准差,并将这一结果与无偏振He-Ne激光入射进行了比较。结果表明,当入射光为线偏振光时,偏振方向垂直于散射面时测量效果最好;另一方面,由于颗粒系散射迭加造成的散射光偏振度降低,使线偏振光源与无偏振光源产生的散射光偏振度无明显差别,证明在测量中可以使用无偏振He-Ne激光代替。     

苏氨酸的太赫兹及拉曼光谱研究

采用太赫兹时域光谱和拉曼光谱法对L-苏氨酸多晶粉末进行测试研究,获得了样品在0.2—2.8 THz（6.7—93.2 cm^-1）波段的特征吸收和10—4000 cm^－1波段的拉曼散射谱;分别在6.7—93.2 cm^－1和400—4000 cm^－1两个波段进行了吸收光谱与拉曼散射光谱的对比,根据晶胞分子所属的空间群,对隶属于分子的极性和非极性振动模式（A, B₁, 关键词： 太赫兹光谱 拉曼散射 氨基酸     

可变晶格常数乙醇-二氧化硅胶质光子晶体中的Raman散射

制备了乙醇 二氧化硅三维胶质光子晶体，其晶格常数随着晶体高度的变化而变化.用皮秒 脉冲激光在不同高度激发光子晶体中乙醇产生Raman信号，得到了两个结果：1）即使Raman 信号的中心频率与光子晶体的带隙中心频率一致，在其禁带方向上测得的强度也没有被抑制 到与带隙深度同样的量级；2）尽管单纯的具有Raman信号频率的入射光的透过率随着高度的 变化而剧烈变化，但在光子晶体中产生的Raman信号强度却几乎不随高度的变化而变化，即 光子晶体的赝带隙几乎没有影响在禁带方向上测得的Raman信号强度.基于“光子晶体 关键词： 光子晶体 Raman散射 赝带隙 内部光源     

X-ray scattering and polarization in wavelength-dispersive spectrometers

Background suppression is discussed in wavelength-dispersive polarization X-ray spectrometer (WDPXRS), in which the goniometer scans in plane perpendicular to primary and secondary beams. Background suppression coefficients in WDPXRS and energy-dispersive polarization X-ray spectrometer are determined by different expressions (in “The scattering suppression of X-rays with energy of 20–200 keV in spectrometers with Barkla polarizers,” doi: 10.1002/xrs.3046 ). It is proposed to install silicon drift detectors in WDPXRS and implement energy-dispersive and wavelength-dispersive modes in one channel.     

Simultaneous measurements of global vibrational spectra and dephasing times of molecular vibrational modes by broadband time-resolved coherent anti-Stokes Raman scattering spectrography

In broadband coherent anti-Stokes Raman scattering (CARS) spectroscopy with supercontinuum (SC), the simultaneously detectable spectral coverage is limited by the spectral continuity and the simultaneity of various spectral components of SC in an enough bandwidth. By numerical simulations, the optimal experimental conditions for improving the SC are obtained. The broadband time-resolved CARS spectrography based on the SC with required temporal and spectral distributions is realised. The global molecular vibrational spectrum with well suppressed nonresonant background noise can be obtained in a single measurement. At the same time, the measurements of dephasing times of various molecular vibrational modes can be conveniently achieved from intensities of a sequence of time-resolved CARS signals. It will be more helpful to provide a complete picture of molecular vibrations, and to exhibit a potential to understand not only both the solvent dynamics and the solute-solvent interactions, but also the mechanisms of chemical reactions in the fields of biology, chemistry and material science.     

基于超连续光谱激发的时间分辨相干反斯托克斯拉曼散射方法与实验研究

采用钛宝石飞秒激光器输出的一部分光抽运光子晶体光纤以产生超连续光谱,作为抽运光和斯托克斯光,另一部分飞秒激光作为探测光,并结合时间延迟方法,建立超连续光谱激发时间分辨相干反斯托克斯拉曼散射(CARS)实验系统,测试了具有较宽拉曼光谱的二甲基亚砜样品.实验结果表明,所建立的实验系统能有效抑制非共振背景噪声,并且通过一次测量,即可获得二甲基亚砜在690—3200cm-1范围内的CARS光谱信息,获得的二甲基亚砜CARS光谱范围达到2500cm-1.同时给出了所采用的光子晶体光纤光谱展宽的实验结果.     

保偏光纤中在不同频率区域拉曼效应和参量放大增益谱

根据考虑拉曼效应后的双折射光纤所满足的非线性相干耦合薛定谔方程, 推导出了当沿两个偏振轴入射两束不同波长的激光脉冲时所产生的增益表达式. 通过与入射相同频率的光脉冲所产生增益的对比, 在考虑拉曼效应的情况下, 讨论了入射不同频率光脉冲对增益谱的影响. 结果表明, 在正常色散区和反常色散区, 当输入两束激光脉冲频率不同时, 增益谱较输入相同频率激光脉冲时产生了明显的变化, 其外侧的斯托克斯部分和反斯托克斯部分增益峰, 随着群速度失配的增加强度明显加强、偏离中心频率, 可以用于提取太赫兹脉冲.当两偏振模处于不同色散区时, 增益谱与不考虑拉曼效应时也存在明显的不同, 增益谱的对称性遭到破坏, 斯托克斯部分的增益峰强度要明显高于反斯托克斯部分. 关键词： 不同频率区域 保偏光纤 拉曼效应 参量放大     

n-SiC的电子拉曼散射及二级拉曼谱研究

研究了利用离子注入法得到的掺氮n-SiC拉曼光谱. 理论线形分析表明,与4H-SiC相比,6H-SiC中LO声子等离子体激元耦合模(LOPC模)拉曼位移随自由载流子浓度变化较小. 5145nm激发光下得到的电子拉曼散射光谱表明,k位处由1s(A₁)到1s(E)的能谷轨道跃迁带来的拉曼谱6H-SiC中有四条,4H-SiC中有二条;高频6303及635cm^-1处观察到的谱线被认为与深能级缺陷有关. 最后,利用纤锌矿型结构二级拉曼散射选择定则指认了6 关键词： 碳化硅 电子拉曼散射 轨道能谷分裂 倍频谱     

压电晶体拉曼散射的统一量子论

发展了拉曼散射的一个广义量子理论，它能同时说明非极性模和极性模的作用.在场论中， 光被纵光学和横光学模的拉曼散射能在一个统一的理论框架内描述. 关键词： 拉曼散射 声子 量子场论     

Coherent anti-Stokes Raman scattering and normal anti-Stokes Raman scattering due to LO phonons in GaP using cw diode lasers

Coherent anti-Stokes Raman scattering (CARS) and normal anti-Stokes Raman scattering (NARS) have been measured in (001) GaP at room temperature due to the 403 cm⁻¹ LO phonons using a continuous wave (CW) 785.0 nm fixed-wavelength pump laser and a CW Stokes laser tunable in the 800-830 nm wavelength range. CARS measurements are normally made using pulsed lasers. The use of CW diode lasers allows a more accurate comparison between the measured and calculated values of the CARS signal. The pump and Stokes laser beams were linearly polarized perpendicular to each other, same as the pump and normal Stokes/anti-Stokes scattered light for the GaP sample used in this work. The pump and Stokes laser powers incident upon the GaP sample, located in the focal plane of a 20 mm effective focal length lens, were <20 and 50 mW, respectively. The diameter of the laser beams in the focal plane of the focusing lens was determined to 40±5 μm. The pump and Stokes laser beam intensities incident upon the 0.3 mm thick GaP sample were <2 and 5 kW cm², respectively. The powers of the CARS and NARS signals were measured using a Raman spectrometer. The signal output of the Raman spectrometer was calibrated using the pump laser and several neutral density filters. The Raman linewidth (full-width at half-maximum) of the LO phonons was determined to be 0.95±0.05 cm⁻¹, using the variation of the CARS signal with the wavelength of the Stokes laser. The measured powers of the CARS and NARS signals are about a factor of 5 and 1.5, respectively, smaller than those calculated from the corresponding theoretical expressions.     

YbVO4晶体的受激拉曼散射

采用腔外单次通过方式,研究了一种新型晶体YbVO₄的受激拉曼散射.当抽运激光为532 nm皮秒脉冲时获得了3级斯托克斯线(558.47 nm, 587.92 nm, 620.67 nm)和1级反斯托克斯线(507.58 nm),测得YbVO₄晶体1级斯托克斯受激拉曼散射的稳态增益系数为17.8±0.2 cm/GW,受激拉曼散射的整体转换效率达到37%.实现了YbVO₄晶体对355 nm皮秒激光的受激拉曼散射,观察到1级斯托克斯线(366.1 关键词： 受激拉曼散射 稳态增益系数 转换效率 4晶体')" href="#">YbVO₄晶体     

Laser light scattering technique for non-invasive in situ simultaneous measurements on elastic constants and viscosity coefficients of nematic liquid crystals

Theelasticconstantsandtheviscositycoefficientsarethekeyparametersforthephysicalpropertiesofnematicliquidcrystals(LCs)[1,2],fortheyarecorrespondingtothethresholdvoltageandtherespondingtimeofliquidcrystaldisplaydevices[3,4].Sofarnotechniquethatcansimultaneouslymeasurethetwoparametersinsituhasbeenreported.TheelasticconstantsandviscositycoefficientsofnematicLCsatthepresentaremeasuredusingdifferentmethodsindependently.TheviscositycoefficientsisgenerallymeasuredwithOstwaldviscosimeter,andtheelasti…     

The polarization effect of a laser in multiphoton Compton scattering

The multiphoton Compton scattering in a high-intensity laser beam is studied by using the laser-dressed quantum electrodynamics(QED) method, which is a non-perturbative theory for the interaction between a plane electromagnetic field and a charged particle. In order to analyze in the real experimental condition, a Lorentz transformation for the cross section of this process is derived between the laboratory frame and the initial rest frame of electrons. The energy of the scattered photon is analyzed, as well as the cross sections for different laser intensities and polarizations and different electron velocities. The angular distribution of the emitted photon is investigated in a special velocity of the electron, in which for a fixed number of absorbed photons, the electron energy will not change after the scattering in the lab frame.We obtain the conclusion that higher laser intensities suppress few-laser-photon absorption and enhance more-laser-photon absorption. A comparison between different polarizations is also made, and we find that the linearly polarized laser is more suitable to generate nonlinear Compton scattering.     

Influence of temperature on strain-induced polarization Coulomb field scattering in AIN/GaN heterostructure field-effect transistors

Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures （~ 100 K）. Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is inves- tigated. The polarization Coulomb field （PCF） scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin A1N barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect.