Van der Waals interactions between atoms and dispersive surfaces at finite temperature

The long-range interactions between an atomic system in an arbitrary energy level and dispersive surfaces in thermal equilibrium at non-zero temperature are revisited within the framework of the quantum-mechanical linear response theory, using generalized susceptibilities for both atom and electromagnetic field. After defining the observables of interest, one presents a general analysis of the atomic level shift valid for any number and form of dielectric surfaces. It is shown that, at zero temperature, one recovers well-known results previously obtained in the linear response regime. The case of a plane dispersive surface is elaborated on in the non-retarded regime. Calculations are given in detail for a dielectric surface exhibiting a single polariton resonance. Theoretical predictions are presented within a physical viewpoint allowing one to discriminate between the various interaction processes: on one hand, the level shift induced by non-resonant quantum fluctuations, on the other hand, two potentially resonant atom-surface couplings. The first resonant process appears for excited-state atoms and originates in an atomic de-excitation channel resonantly coupled to the surface polariton mode. It exists also at zero temperature, and has been studied and observed previously. The second physical process, which exists at non-zero temperature only, corresponds to the reverse process in which a thermal quantum excitation of a surface polariton resonantly couples to an atomic absorption channel. This novel phenomenon is predicted as well for a ground state atom, and can turn the ordinary long-range van der Waals attraction of atoms into a surface repulsion at increasing temperatures. This opens the way to the control and engineering of the sign and amplitude of van der Waals forces via surface temperature adjustment.     

Van der Waals interaction of membranes

The van der Waals interaction of hydrocarbon films in water is calculated using the exact expression derived by Parsegian and Ninham. The results are compared to an often used approximation, which fails for this system due to the large difference between the static dielectric constants of hydrocarbons and water. For large membrane separations the correct value of the van der Waals interaction is about a hundred times larger than the approximate result. The consequences for predicting unbinding transitions and interpreting experiments are discussed.Dedicated to Prof. Herbert Wagner on the occasion of his 60th birthday     

Van der Waals forces and spatial dispersion

A version of the Green’s functions theory of the Van der Waals forces which can be conveniently used in the presence of spatial dispersion is presented. The theory is based on the fluctuation-dissipation theorem and is valid for interacting bodies, separated by vacuum. Objections against theories accounting for the spatial dispersion are discussed.     

Geometrothermodynamics of Van der Waals black hole

We study the geometrothermodynamics of a special asymptotically AdS black hole, i.e. Van der Waals \(\left( VdW\right) \) black hole, in the extended phase space where the negative cosmological constant \(\Lambda \) can be regarded as thermodynamic pressure. Analysing some special conditions of this black hole with geometrothermodynamical method, we find a good correlation with ordinary cases according to the state equation.     

范德瓦耳斯和他的状态方程

在物理学发展史上，范德瓦耳斯对气—液流体系统做了开创性的研究工作，建立了人类历史上第一个既能反映气、液各相性质，又能描述相交和临界现象的状态方程。范德瓦耳斯的理论成就和研究方法对热力学、统计力学和低温物理学的发展产生了重要而深远的影响。文章系统探讨了范德瓦耳斯方程产生的历史背景、科学意义和局限性，讨论了范德瓦耳斯的理论和方法对当代物理学的启发意义。     

Van der Waals Attraction of Hydrogen Atoms

Journal of Experimental and Theoretical Physics - The potential energy of attraction between hydrogen atoms spaced by distance R on the order of aB/α, where aB is the Bohr radius and α =...     

Van der Waals energy surface of a carbon nanotube sheet

The van der Walls interaction between a carbon nanotube sheet (CNTS) and a rare gas atom, is studied using both atomistic and continuum approaches. We present analytical expressions for the van der Waals energy of continuous nanotubes interacting with a rare gas atom. It is found that the continuum approach does not properly treat the effect of atomistic configurations on the energy surfaces. The energy barriers are small as compared to the thermal energy, which implies the free motion above the CNTS in heights about one nanometer. In contrast to the energy surface of a graphene sheet, the honeycomb lattice structure in the energy surface of a CNTS is imperceivable. Defects alter the energy surface which therefore influence the gas adsorption mechanism.     

Van der Waals interaction between an atom and a surface defect

A continuum dielectric theory is used to investigate the Van der Waals interaction between an atom and a point defect on a planar surface. A vacancy (or adsorbed atom) is modelled by a hemispherical pit (or bump) which perturbs the dielectric response of the defect-free surface. The anisotropy of the interaction is found to be qualitatively different for the vacancy and adsorbate situations. The estimated magnitude of the interaction seems consistent with recent experimental results.     

The Van der Waals interaction between an atom and a solid

Measurements of the scattering of neutral atoms by metal cylinders have indicated a serious discrepancy between theory and experiment for the strength of the long-range Van der Waals interaction. To clarify the content of the theory, we present here a formal analysis of the Van der Waals interaction between an atom and a solid, based on the approach of McLachlan. A key quantity in the theory is the response of the solid to an external, time-dependent dipole. This response is amenable to classical analysis, and we calculate it for a variety of model systems. When the solid may be treated as a continuum with a flat surface, the concept of surface impedance allows a convenient parameterization and we may incorporate thereby magnetic effects, non-local dielectric response, and the influence of finite layers in the solid. We also study the modifications induced by a rough surface, finding the average change in the coupling strength in the presence of weak roughness.     

Van der Waals broadening of argon absorption lines

Van der Waals broadening coefficients for Ar absorption lines have been measured using the resonant Faraday effect. These coefficients have the values of 2·9 ± 0·8, 2·4 ± 0·3, 1·9 ± 0·2 (in units of 10^?20 cm^?1 ?cm^?3) for the lines 6965 Å, 7067 Å, 7635 Å and 8115 Å, respectively, respectively. The measured coefficients are in reasonable agreement with measurements carried out on Ar emission lines and with theoretical calculations.     

Asymmetry of the Van der Waals interaction between a molecule and a surface

The asymptotic molecule-surface Van der Waals interaction is found to depend on the orientation of the molecular axis because of the asymmetry of the molecular polarizability and the angle-dependence of the surface response to a dipole field. This orientation dependence can cause rotational transitions in a beam of molecules directed at the surface, and contributes to the splitting of rotational levels within a given multiplet when a molecule is physisorbed. An estimate of this splitting is given for H₂.     

Van der Waals interactions in ionic and semiconductor solids

van der Waals (vdW) energy corrected density-functional theory [Phys. Rev. Lett. 102, 073005 (2009)] is applied to study the cohesive properties of ionic and semiconductor solids (C, Si, Ge, GaAs, NaCl, and MgO). The required polarizability and dispersion coefficients are calculated using the dielectric function obtained from time-dependent density-functional theory. Coefficients for "atoms in the solid" are then calculated from the Hirshfeld partitioning of the electron density. It is shown that the Clausius-Mossotti equation that relates the polarizability and the dielectric function is accurate even for covalently-bonded semiconductors. We find an overall improvement in the cohesive properties of Si, Ge, GaAs, NaCl, and MgO, when vdW interactions are included on top of the Perdew-Burke-Ernzerhof or Heyd-Scuseria-Ernzerhof functionals. The relevance of our findings for other solids is discussed.     

Van der Waals Forces and Photon-Less Effective Field Theory

In the ultra-cold regime Van der Waals forces between neutral atoms can be represented by short range effective interactions. We show that universal low energy scaling features of the underlying vdW long range force stemming from two photon exchange impose restrictions on an Effective Field Theory without explicit photons. The role of naively redundant operators, relevant to the definition of three body forces, is also analyzed.     

氦的范德瓦尔斯体积修正项的计算与分析

对范德瓦尔斯体积项的修正一直是提高状态方程计算准确度的方向之一 ,随着状态方程的不断发展 ,对其体积项的修正方法也在不断的出现。文中对几种可以计算参数 b的方法进行了分析与计算 ,从中发现利用不同的方法算出的 b值有差异 ,在计算过程中 ,方法的选择是非常重要的     

Retarded Van der Waals potential between a conducting plane and a polarizable particle

The method of zero point energy is used to obtain the retarded Van der Waals potential between a perfectly conducting plane and a particle possessing both electric and magnetic polarizability. As a special case, the force between a conducting plane and a conducting sphere is obtained.     

Increase in Axial Compressibility in a Spinning Van der Waals Gas

We investigated the adiabatic compression along the axial direction of a spinning Van der Waals gas by applying theoretical analysis and molecular dynamics (MD) simulations. Based on the analytical results, the rotation-induced compressibility increase effect is significant in a Van der Waals gas, while the attraction term in the Van der Waals equation of states (EOS) contributes significantly to the compressibility increase in a spinning system. We conducted MD simulations to the axial compression of a spinning gas, whose state is far from the ideal gas state, and further demonstrated that the rotation-induced compressibility increase effect in a dense state is robust, implying that such a phenomenon can be detected in experiments under high-energy-density conditions.