激光沉积超导薄膜过程中出射粒子速度的飞行时间谱分析

采用飞行时间谱技术,测量了准分子激光烧蚀沉积高温超导薄膜过程中,由靶面出射粒子的飞行速度。研究了粒子速度与充氧压及其激光能量密度的关系。讨论了高能粒子在薄膜原位低温外延生长中的作用。     

超短脉冲准分子激光淀积类金刚石薄膜的实验研究

利用ＫｒＦ超短脉冲激光器开展了超短脉冲激光淀积金刚石薄膜实验研究,薄膜生长速率０．０２ｎｍ／ｐｕｌｓｅ,厚度０．５－０．６μｍ,显微硬度５５ＧＰａ,光学透过率优于９０％,采用等离子本的时间－空间分辨的发射光谱技术,给出了等离子体的粒子成份以及等离子体的时间－空间的演化图像,以及在不同激光参数条件下等离子体特性的变化,发现超短脉冲激光的等离子体有能量高、持续时间短（高通量）的特点,适合类金刚石薄膜的     

等离子体增强脉冲激光沉积o-BN薄膜

利用等离子体增强脉冲激光沉积系统在Si（100）基底上沉积出了高质量的o-BN薄膜,利用红外光谱（FTIR）、X射线衍射谱（XRD）和原子力显微镜照片对o-BN薄膜进行了表征.通过红外光谱（FTIR）得到o-BN薄膜的红外峰特征峰值为1189cm^-1,1585cm^-1和1450cm^-1;由XRD谱得到o-BN薄膜的（111）,（020）,（021）,（310）和（243）各晶面的衍射峰, 特别是（310）和（243）晶面的衍射峰非常强;通过原子力显微镜照片清楚看到BN薄膜具有尖状突起的表面形貌. 关键词： 等离子体增强脉冲激光沉积 氮化硼薄膜 X射线衍射谱     

螺旋波等离子体化学气相沉积纳米硅薄膜的光学发射谱研究

利用光学发射谱技术对螺旋波等离子体化学气相沉积纳米硅薄膜的等离子体内活性粒子的光发射特征进行了原位测量.研究了薄膜沉积过程中各实验参量对活性基团SiH^*， H^β以及H^α的发射谱强度的影响.实验结果表明，静态磁场的加入可显著提高反应气体 的解离效率 ；适当的氢稀释可以提高氢活性粒子的浓度，而过高的氢稀释比将使含硅活性基团浓度显著 减小；提高射频馈入功率整体上可以使各活性粒子的浓度增加，并有利于提高到达衬底表面 氢活性粒子的相对比例.结合螺旋波等离子体色散关系和等离子体特点对以上结果进行了分 析.该结果为螺旋波等离子体沉积纳米硅薄膜过程的理解及制备工艺参数的调整提供了基础 数据. 关键词： 光学发射谱 螺旋波等离子体化学气相沉积 纳米硅薄膜     

准分子激光诱导铅等离子体中谱线Stark展宽时空特性研究

测定了激光诱导铅等离子体中铅原子和离子谱线Ｓｔａｒｋ展宽的时间演化特性以及与缓冲气体压力之间的关系，由此计算得到了等离子体中电子密度的时间演化特性及其与缓冲气体压力之间的关系，实验结果表明，由不同的金属固体材料产生的激光等离子体的动力学性质差异很大，并讨论了形成这种差异的物理机制。     

脉冲Nd：YAG激光烧蚀A1产生等离子体特征辐射的机理研究

采用时间与空间分辨光谱测量技术，研究了在Ａｒ气为缓冲气体下，用脉冲Ｎｄ：ＹＡＧ激光烧蚀Ａ１产生等离子体遥发射光谱及其随气压的变化规律，对粒子的激发机理进行了讨论认为特征谱线是由复合辐射为主要机理，并用此结论在一定程序上解释了实验结果。     

脉冲激光烧蚀碲镉汞材料的等离子体发射谱

脉冲激光辐照处于不同背景气压下的Hg0.8Cd0.2Te材料表面,用时间和空间分辨诊断技术探测了激光照射后产生的等离子体发射谱,根据所获得的飞行时间谱测量了等离子体中粒子的出射速度,结果表明粒子速度随着出射距离的增加迅速减小,且背景气压对出射速度有很大的影响,而激光能量对粒子速度的影响不大。另外根据谱线的展宽计算了等离子体中的电子密度,结果表明,电子密度在激光辐照样品后的短时间内迅速减小,且电子密度最大的位置不是出现在靶的表面而是在距表面一定距离处。     

脉冲激光制膜过程中等离子体演化规律的研究

利用有限差分法对脉冲激光沉积(PLD)技术制备KTa065Nb035O3(KTN)薄膜过程中等离子体在等温和绝热两个阶段的速度演化进行了模拟，并给出了其中主要粒子在空间的具体演化规律，对等离子体在空间膨胀的物理机制，进行了深入的讨论，给出了相应演化过程的物理图像，并揭示了等离子体羽辉在膨胀过程中呈现椭球外形的内在原因.     

脉冲Nd∶YAG激光烧蚀Al产生等离子体特征辐射的机理研究

采用时间与空间分辨光谱测量技术,研究了在Ar气为缓冲气体下,用脉冲Nd∶YAG激光烧蚀Al产生等离子体的发射光谱及其随气压的变化规律,对粒子的激发机理进行了讨论,认为特征谱线是由复合辐射为主要机理,并用此结论在一定程度上解释了实验结果。     

室温下用脉冲激光沉积E-BN薄膜

 在利用等离子体增强脉冲激光沉积系统沉积立方氮化硼（cBN）薄膜时，发现了氮化硼（BN）材料的E-BN相，并利用扫描电镜和红外吸收光谱及X射线衍射技术对薄膜样品进行了分析，得到了制备较高质量E-BN薄膜的一些热力学参数及时间参数，验证了现有的E-BN结构的形成理论。     

Determining the properties of pulsed laser deposited thin films by controlling the kinetic energy of the film-forming particles

The deposition of Al₂O₃ thin films by pulsed KrF excimer laser radiation (248 nm) on fused silica substrates is investigated as a function of the processing variables: laser fluence, processing gas pressure and target-to-substrate distance. The kinetic energy of the Al species in the laser-generated plasma, as measured by time-of-flight optical emission spectroscopy and time-of-flight quadrupole mass spectrometry, is described as a function of the type and pressure of the processing gas, the distance from target, and the laser fluence. The influence of the kinetic energy of the film-forming particles on the density and the refractive index of the resulting films, determined by ellipsometry, is investigated. The densification of the Al₂O₃ thin films to 94% of the bulk value is achieved by film-forming Al particles impinging on the growing surface with mean kinetic energies of about 25 eV.     

Controlling crystal quality and orientation of pulsed-laser-deposited BaTiO3 thin films by the kinetic energy of the film-forming particles

The deposition of BaTiO₃ thin films by pulsed excimer laser radiation (248 nm) on Pt/Ti/Si(111) and Pt/Ti/Si(100) substrates is investigated as a function of the processing variables laser fluence, processing gas pressure, and target-to-substrate distance under conditions of temporal and spatial properties of the involved vapour and plasma states. The kinetic energy of the species in the laser-generated plasma, as measured by time-of-flight optical emission spectroscopy and time-of-flight quadrupole mass spectrometry, is described as a function of the pressure of the processing gas, the distance from the target, and the laser fluence. The influence of the kinetic energy of the film-forming particles on the crystalline structure, defects, and orientation, and on the resulting electrical properties of the films is investigated. X-ray diffraction measurements and polarisation-dependent micro-Raman measurements reveal a c-axis orientation normal to the substrate surface, in the case of high particle energy (>50 eV), whereas at low kinetic energies (<30 eV) a [111]_pc or [110]_pc orientation is preferred. The ferroelectricity and the dielectric constant of the films, determined by impedance measurements, decrease with increasing kinetic energy of the film-forming particles from )_r=1000-2200 to )_r=200-700. This decrease correlates with the change of the orientation and with an increasing lattice constant of the films, indicating that particles with high kinetic energies produce crystal defects and stress in the growing film.     

高脉冲功率能量PLD法制备MgZnO薄膜中的沉积机理

用PLD法成功制备了一系列高质量的MgZnO薄膜。实验中发现高脉冲能量沉积薄膜的结构和发光特性随基片温度的变化规律与低脉冲能量下的结果不一样:基片在室温时高脉冲能量制备薄膜的XRD峰的半峰全宽比高基片温度时的结果相对更小;AFM显示其颗粒变大,柱状生长突出;PL谱紫峰与绿峰强度比最大,结晶质量反而提高。另一方面,与低脉冲能量时相反,增大氧气压强后高脉冲能量沉积的薄膜XRD半峰全宽变窄。结合实验现象和表征,合理解释了高脉冲能量沉积的机理。室温制备高质量MgZnO薄膜的PLD沉积机理对于以后在柔性衬底上沉积薄膜的研究有重要的参考价值。     

准分子激光蒸发YBa2Cu,sub>3C7-x靶产生等离子体的膨胀过程研究

对XeCl准分子激光蒸发YBa2Cu3O7-x陶瓷靶产生的等离子体进行了实验和理论研究.利用发射光谱,分辨出等离子体内的各种粒子.并对各种粒子进行了飞行时间谱测量.在实验的基础上,建立了一个等离子体的膨胀模型.计算结果与实验符合较好.     

准分子激光蒸发YBa_2Cu_3C(7-x)靶产生等离子体的膨胀过程研究

对XeCl准分子激光蒸发YBa_2Cu_3O_(7-x)陶瓷靶产生的等离子体进行了实验和理论研究.利用发射光谱,分辨出等离子体内的各种粒子.并对各种粒子进行了飞行时间谱测量.在实验的基础上,建立了一个等离子体的膨胀模型.计算结果与实验符合较好.     

XeCl（308nm）脉冲准分子激光淀积类金刚石薄膜

利用ＸｅＣｌ（３０８ｎｍ）脉冲准分子激光淀积技术在功率密度５×１０８Ｗ／ｃｍ２、室温、真空度１０－３Ｐａ的条件下，制备出不含氢成分的类金刚石薄膜，研究了类金刚石薄膜的特性及其随制备工艺条件的变化规律。研究了激光诱导的碳等离子体发射光谱，探讨了类金刚石薄膜的形成机理。     

Synthesis and characterization of Ti–Ni shape memory alloy thin films by pulsed laser deposition

Shape-memory alloys are crucial in various industrial fields. However, a high-quality film synthesis method has not been established yet. Here we examine optimum conditions for synthesis of thin films by pulsed laser deposition of Ti–Ni alloy target in vacuum. We investigated surface morphologies and chemical compositions of the films which were obtained under various conditions. We found that the suitable Ti/Ni ratio was obtained by adjusting the distance between the target and the substrate in vacuum. In parallel, we analyzed plasma plume by optical emission spectroscopy and time-of-flight mass spectrometry. We discuss the basic behavior of ablated particles in vacuum.     

脉冲激光沉积(PLD)法生长高质量ZnO薄膜及其发光性能

采用脉冲激光沉积(PLD)法在单晶Si(100)衬底上生长ZnO薄膜,以X射线衍射(XRD)、原子力显微镜(AFM)和透射电镜(TEM)等手段分析了所得ZnO薄膜的晶体结构和微观形貌。优化工艺(700℃,20Pa)下生长的ZnO薄膜呈c轴高度择优取向,柱状晶垂直衬底表面生长,结构致密均匀。室温光致发光(PL)谱分析结果表明,随着薄膜生长时O₂分压的增大,近带边紫外发光峰与深能级发光峰之比显著增强,表明薄膜的结晶性能和化学计量比都有了很大的改善。O₂分压为20Pa时所生长的ZnO薄膜具有较理想的化学计量比和较高的光学质量。     

Laser-produced plasma ion characteristics in laser ablation of lithium manganate

Laser ablation is widely used to assist in the fabrication of prototype lithium manganate (LiMn₂O₄) thin film structures for Li-ion battery electrodes via the pulsed laser deposition technique. However, films can be considerably Li and/or O deficient, depending the deposition conditions used. Here we present data on the ionic component of laser-produced plasma in laser ablation of lithium manganate with ns excimer laser. Plasma was monitored using an electrical Langmuir ion probe, in time-of-flight mode in conjunction with mass spectrometry to identify the dominant ionic species. Ablation in vacuum at ∼2.5 J cm⁻² revealed the plasma's ionic component was composed primarily of singly charged Li and Mn ions. The time-of-flight data indicates significant deceleration of the plasma when ablation is carried out in an oxygen background gas pressure of the order of 10 Pa. The implications for thin film growth are considered in terms of the possible gas phase interactions and/or thin film re-sputtering yield.     

非晶InGaZnO薄膜成分配比对透明性和迁移率的影响

利用固相反应法制备了富铟含量在不同成分配比下的高质量InGaZnO陶瓷靶材,采用脉冲激光沉积法,在基片温度为20℃、氧压为1Pa条件下,在石英玻璃衬底上生长了非晶InGaZnO薄膜,并对薄膜进行X射线衍射、透射吸收光谱、拉曼光谱与霍尔效应测试。通过对InGaZnO薄膜的测试表征,在较低温度条件下,铟含量较高的薄膜样品保持了非晶结构、可见光的高透明性和高电子迁移率,InGaZnO薄膜有望应用于电子器件。