Excitation spectroscopy on the M-band of red HgI2

The luminescence of red HgI₂ is investigated as a function of excitation intensity and -wavelength. At low excitation, emission is due to free and bound exciton recombination, at high levels a “M-band” is dominating. This M-band is partially ascribed to biexciton decay, this assumption being supported by resonances found in the excitation spectra. The biexciton binding energy is determined to be 6±1 meV.     

Anisotropic polariton dispersion in red HgI2

We have measured resonant Brillouin Scattering near the A-exciton region of a layer-semiconductor, red-HgI₂. The Brillouin shift is interpreted in terms of a scattering process between the two polariton states by an acoustic phonon. The estimated exciton masses for the translational motion are (0.68 ± 0.1)m₀ and (1.2 ± 0.1)m₀ for the (100 and (001) directions, respectively.     

Exciton–phonon luminescence and Raman scattering in CuGaS2 crystals

Photoluminescence and resonance Raman scattering spectra of CuGaS₂ crystals are investigated at low temperature (10 K) under the excitation with the radiation from a spectral interval obtained by passing the radiation of an incandescent or xenon lamp through a monochromator. The thermalized luminescence of the Γ₄ and Γ₅ excitons was revealed under the excitation by an interval of photon energies higher than the energy of the ground state of long-wavelength Γ₄ excitons (ω_Т(Γ₄) + ). The energy conversion between the polariton modes in luminescence and resonance Raman scattering spectra is considered.     

Annealing temperature dependence of Raman scattering in Si/SiO2 superlattice prepared by magnetron sputtering

Si/SiO₂ superlattices were prepared by magnetron sputtering, and the deposition temperature and annealing temperature had a great influence on the superlattice structure. In terms of SEM images, the mean size of Si nanocrystals annealed at 1100 °C is larger than that of nanocrystals annealed at 850 °C. It was found that the films deposited at room temperature are amorphous. With increasing deposition temperature, the amorphous and crystalline phases coexist. With increasing annealing temperature, the Raman intensity of the peak near 470 cm⁻¹ decreases, and the intensity of that at 520 cm⁻¹ increases. Also, on increasing the annealing temperature, the Raman peak near 520 cm⁻¹ shifts and narrows, and asymmetry emerges. A spherical cluster is used to model the nanocrystals in Si/SiO₂ superlattices, and the observed Raman spectra are analyzed by combining the effects of confinement on the phonon frequencies. Raman spectra from a variety of nanocrystalline silicon structures were successfully explained in terms of the phonon confinement effect. The fitted results agreed well with the experimental observations from SEM images.     

Raman scattering from mixed crystals (HgBr2)1−x(HgI2)x

The behavior of long wavelength optic phonons in mixed system HgBr₂-HgI₂ has been investigated in Raman scattering. Different types of behavior, i.e. ‘persistent type’ and ‘amalgamation type’ were observed. Three strong Raman bands were observed for persistent type mode. These correspond to stretching vibration of HgBr₂, HgBrI, HgI₂ molecules. Intensity of these bands showed striking concentration dependence. A model based on nearly free molecular approximation have been proposed to explain the dependence. The analysis indicated that the distribution of anions on the sublattices is essentially random. For amalgamation (one-mode) type behavior, it is suggested that the intramolecular force relevant to the vibration is comparable to the intermolecular force and that the band width of the corresponding phonon branch in the parent crystal is broad enough to be degenerate with impurity mode at the low concentration limit.     

Raman scattering of NiS2

Raman scattering measurements of NiS₂ is done and five optical phonon peaks are found. These peaks are assigned to A_g, E_g and 3T_g phonons which are all of the Raman active optical phonons in pyrite-type crystal. The results are compared with those of FeS₂ and MnS₂.     

Raman scattering of LiGaO2

The Raman spectrum of LiGaO₂ is reported together with a preliminary identification of the optical modes and their temperature dependence between 6 and 700 K. The observed temperature dependence of the lines gave no indication for second order processes. However, at low temperatures additional lines have been observed indicating a phase transition at approximately 65 K.     

Raman scattering in Ag-intercalated TiS2

Ag-intercalated TiS₂ has been investigated using electron diffraction and Raman scattering. The energies of the E_g-1 and A_1g modes in 1T-TiS₂ at 300 K were found to be 232 and 336 cm^-1, respectively. In Ag_0.3TiS₂, at an ambient temperature of 4.2 K, modes were observed at 207, 239, 277, 311, and 347 cm^-1. Three of these modes have been associated with the formation of a superlattice at low temperatures. The superlattice formation was observed by electron diffraction and is attributed to an ordering of the silver atoms at interlayer interstices.     

Magnon Raman scattering in CoBr2

The one-magnon Raman spectrum of CoBr₂ has been investigated as a function of temperature, and peak frequency, integrated intensity and width parameters obtained. The results obtained for the band energy at low temperature (22.2 ± 0.2 cm^-1 at 5.7.K) are in good agreement with AFMR and neutron scattering results. The one-magnon energy renormalises relatively slowly with increasing temperature and is about 15 cm^-1 at T_N = 19 K, whereas the integrated intensity approaches zero like the magnetization at T_N and the width diverges. A low intensity band at 26.8 ± 1 cm^-1 (7.6K) may be due to two-magnon scattering from spin waves along the c-axis.     

Raman scattering from magnons in CoCl2 and FeCl2

One-magnon Raman scattering has been observed in the metamagnets CoCl₂ and FeCl₂. The k = 0 magnon energies are 16 ± 1 cm^-1 at 21 K and 16.4 ± 0.4 cm^-1 at 12 K, respectively and these values are in good agreement with previous AFMR and neutron scattering results. A search for two-magnon scattering in both compounds was unsuccessful, largely because of masking from nearby first-order phonons and a weak temperature dependent broad band at 140 cm^-1 in CoCl₂, which is assigned to two-phonon scattering from acoustic phonons.     

Raman scattering of the MoS2 and WS2 single nanotubes

We report here the results of the first resonance Raman study on single MoS₂ and WS₂ nanotubes and microtubes synthesized by chemical transport reaction. These multiwall tubes represent the longest known inorganic nanotubes grown up to several millimetre lengths with diameters ranging from less than ten nanometers to several micrometers. The nanotubes grown at nearly equilibrium conditions contain extremely low density of structural defects. The selected area diffraction on the thick-wall nanotubes revealing the rhombohedral (3R) stacking, otherwise stable at elevated pressure above 4 GPa, provides indirect evidence of the presence of strain incorporated into the nanotube wall. Results are compared with phonon spectra of plate-like crystals of the same compound. The observed up-shift of Raman peaks in the tubes spectra is explained by the presence of strain. Well preserved crystal structure of tubes is confirmed by comparison with phonon spectra of nanostructured materials from literature.     

Laser excited Raman spectrum of SnSe2

We report the Raman spectrum of a layer type semiconducting compound SnSe₂ with one Sn atom surrounded by six selenium atoms of the layer in an octahedral configuration. A correlation chart relating the irreducible representations of the site groups with those of the factor group has been established. Two Raman active modes at 320 and 399 cm^-1 have been observed and assigned E_g and A_1g representations respectively. Mode degeneracy observed in MoS₂, MoTe₂ and MoSe₂ was not observed in SnSe₂.     

Submillimeter-wave spectroscopy of HN2 and DN2 in the excited vibrational states

The pure rotational transitions of HN₂⁺ and DN₂⁺ in the first excited vibrational states for all the fundamental vibrational modes have been observed in the range of 300-750 GHz. The molecular constants determined are much more accurate compared with those obtained from the infrared spectroscopy. The equilibrium rotational constants, B_e = 46832.45 (71) MHz for HN₂⁺ and B_e = 38708.38 (58) MHz for DN₂⁺, have been determined by correcting for the higher-order vibration-rotation interaction effects, γ_ij, obtained by an infrared investigation. The equilibrium bond lengths are derived from these equilibrium rotational constants: r_e(H-N) = 1.03460 (14) Å and r_e (N-N) = 1.092698 (26) Å.     

Raman scattering from 1T-TaS2

Raman measurements on the 1T-polytype of TaS₂ are reported. In the commensurate charge density wave state, a large number of Raman-active peaks are observed below 400 cm^-1. Most of these peaks are attributed to k = 0 optic phonons resulting from superlattice formation.     

Raman scattering in layered compound 2H-WS2

Raman scattering of layer-type compound 2H-WS₂ has been studied at room temperature. The first-order Raman peaks are observed at 27.4, 357 and 423 cm^-1. The low-frequency peak at 27.4 cm^-1 is a rigid-layer mode, from which the interlayer shear force constant is estimated. The central force model is applied to the high-frequency phonons. The interlayer shear force constant is much smaller than the intralayer force constants. We also find several peaks due to the second-order processes.     

High temperature Raman scattering and phase transition in EuAlO3

Polarized Raman spectra of EuAlO₃ have been obtained at various temperatures from 77–1500 K. Three phonon modes are observed to soften in frequency with increasing temperature. Discontinuity in the frequency temperature dependence appears at 1420 K. This result is consistent with a first order phase transition. Analysis of the Raman data shows evidence of a coupling between the soft mode of Bg(XY) symmetry and one mode of same symmetry.     

Resonant Raman scattering of CdCr2Se4

The scattering cross section of the Raman-active phonons at 156 cm^?1 (Eg) and 169 cm^?1 (F2g) in the ferromagnetic semiconductor CdCr₂Se₄ (T_c=130 K) has been measured as a function of incident photon energy between 1.55 and 2.81 eV, both in the ferromagnetic and paramagnetic phases. The resonance curve peaks sharply near 2 eV and shows a broadening for temperatures below the Curie point. The relative line intensities change significantly with photon energy. The results show that the concept of spin-dependent Raman scattering in the ferromagnetic spinels has to be revised in terms of exchange-splitting-induced resonant Raman scattering.     

Cooperative fluorescence by excitonic resonant pumping in PbI2 and HgI2

The behaviour of the cooperative emission from PbI₂ and HgI₂ at 80 K has been studied at high exciton density by means of a tunable high intensity dye laser pumping. From a comparative analysis of the observed M and S stimulated emission lines from PbI₂ and HgI₂ we find that they strongly depend in two different ways on the pumping photon energy. Then, it is also possible to conclude that exciton-exciton and exciton-electron inelastic scattering are responsible for stimulated emission in PbI₂ and HgI₂ respectively.     

The Raman scattering of Zn3As2

The Raman scattering of Zn₃As₂ crystal is presented within 50–420 cm⁻¹ energy range. The group theory method are used to determine symmetry of the allowed lattice modes, and further to discuss the results obtained.