矩形掺杂光子晶体中电磁波的模式和缺陷模

利用一维矩形掺杂光子晶体中电磁波横向受限的条件,推导出电磁波在其中各个模式满足的关系式,利用它研究了电磁波各模式的特性.利用特征法研究了电磁波的缺陷模随模式量子数和矩形边长的变化规律,得出了一维矩形掺杂光子晶体缺陷模的新结构.     

一维矩形光子晶体中电磁波的传输特性

利用一维矩形光子晶体中电磁波横向受限的条件,推导出电磁波在其中各个模式满足的关系式,从而研究了电磁波各模式的特性.通过色散法研究了电磁波的传输特性随模式量子数和矩形边长的变化规律,得出了一些不同于一维非受限光子晶体的新特征,即一维矩形光子晶体的禁带由模式量子数确定,禁带频率中心和频率宽度与模式量子数和边长有关.     

一维矩形光子晶体中电磁波的传输特性

利用一维矩形光子晶体中电磁波横向受限的条件,推导出电磁波在其中各个模式满足的关系式,从而研究了电磁波各模式的特性.通过色散法研究了电磁波的传输特性随模式量子数和矩形边长的变化规律,得出了一些不同于一维非受限光子晶体的新特征,即一维矩形光子晶体的禁带由模式量子数确定,禁带频率中心和频率宽度与模式量子数和边长有关.     

固-流结构矩形掺杂声子晶体的滤波特性

利用一维固-流结构矩形掺杂声子晶体中弹性波横向受限的条件,推导出弹性波在一维固-流结构矩形掺杂声子晶体中各个模式满足的关系式.研究弹性波各模式的缺陷模随模式量子数和杂质厚度的变化规律.利用缺陷模随模式量子数的变化规律可以实现多通道滤波,利用缺陷模随杂质厚度的变化规律可以实现调谐滤波.     

各向异性圆柱掺杂光子晶体的缺陷模及其量子效应

利用光波在一维各向异性圆柱掺杂光子晶体中径向受限的条件,研究了光波在其中出现的模式量子效应,并利用特征矩阵法计算了TE波和TM波各模式的缺陷模的变化规律,得出了一些一维各向异性圆柱光子晶体缺陷模的新结构.缺陷模的频率和透射角都随模式量子数的增加而增大.同一模式缺陷模的频率随圆柱半径的增加而减小. 关键词： 圆柱光子晶体 各向异性介质 量子效应 缺陷模     

一维掺杂光子晶体缺陷模的共振理论

为了得到一维掺杂光子晶体的共振理论,建立了一维掺杂光子晶体的谐振腔模型,利用谐振腔的共振条件推导出缺陷模频率满足的解析公式,从理论上解释了产生一维掺杂光子晶体缺陷模的物理机理.利用频率的解析公式对缺陷模的频率随入射角、杂质光学厚度以及杂质折射率的变化规律进行了研究,解释了一维掺杂光子晶体缺陷模的变化规律.与特征矩阵法的计算结果相比,其结果完全吻合,从而证明了共振理论的正确性,弥补了一维光子晶体研究中数值计算方法的不足.     

一维掺杂光子晶体缺陷模的共振理论

为了得到一维掺杂光子晶体的共振理论,建立了一维掺杂光子晶体的谐振腔模型,利用谐振腔的共振条件推导出缺陷模频率满足的解析公式,从理论上解释了产生一维掺杂光子晶体缺陷模的物理机理.利用频率的解析公式对缺陷模的频率随入射角、杂质光学厚度以及杂质折射率的变化规律进行了研究,解释了一维掺杂光子晶体缺陷模的变化规律.与特征矩阵法的计算结果相比,其结果完全吻合,从而证明了共振理论的正确性,弥补了一维光子晶体研究中数值计算方法的不足.     

圆柱形光子晶体中电磁波的模式和带隙

利用电磁波在一维圆柱光子晶体中径向受限的条件,推导出电磁波在一维圆柱光子晶体中各个模式满足的关系式。研究了各个模式的特征。计算出TE波和TM波各模式的禁带随模式量子数、圆柱半径以及入射角的变化规律。得出了一些不同于一维非受限光子晶体带隙的新结构。     

1维圆柱掺杂光子晶体的滤波性能

为了研究1维圆柱掺杂光子晶体的滤波性质,利用光波在1维圆柱掺杂光子晶体中径向受限的条件,推导出光波在1维圆柱掺杂光子晶体中各个模式满足的关系式,研究了TE波和TM波各模式的缺陷模随模式量子数和杂质光学厚度的变化规律。TE波和TM波的缺陷模频率都随模式量子数的增加而增大;同一模式TE波和TM波的缺陷模频率都随杂质光学厚度的增加而减小。利用缺陷模随模式量子数的变化规律可以实现多通道滤波,利用缺陷模随杂质光学厚度的变化规律可以实现调谐滤波。     

一维掺杂光子晶体嵌入负介电常数材料和负磁导率材料的性质(英文)

对一维掺杂光子晶体嵌入负介电常数材料和负磁导率材料中缺陷模的透射性质进行了研究.利用转移矩阵方法,分别计算了负介电常数材料和负磁导率材料的反射相位谱和一维掺杂光子晶体的透射相位谱.研究发现,在特定条件下,负介电常数材料和负磁导率材料的反射相位以及一维掺杂光子晶体的往返透射相位之和是0或者2π的整数倍.这样的研究结果表明,在满足一定的条件下,一维掺杂的光子晶体嵌入负介电常数材料和负磁导率材料中后,无论杂质的厚度多大,在光子带隙中仅出现一个缺陷模.而且,由于负介电常数材料和负磁导率材料性质的限制,单个缺陷模的品质因子会大大提高.     

On transmittance and localization of the electromagnetic wave in two-dimensional graphene-based photonic crystals

Two-dimensional graphene-based photonic crystal (GPC) formed by a periodic array of the homogeneous dielectric cylinders etched in the alternating graphene and dielectric layers and its inverse counterpart are considered. The transmittance of the photonic crystal is obtained. The waveguide due to the localization of the electromagnetic wave on the lattice defect that breaks the translational symmetry of the GPC of two different topologies is studied. The different topologies of GPC are characterized by different photonic band structures with different widths of photonic band gaps (PBG) and provide different frequencies for the localized electromagnetic wave due to the defect. The frequencies of the localized mode for both type of the GPC, located inside the lowest PBG, are in the range of THz or tens of THz depending on the topology of the GPC. It is shown that the photonic band gap always can be tuned by changing the chemical potential of graphene to provide formation of the localized photonic mode due to the defect. The technological advantages of the GPC, as well as the opportunity to tune the PBG and the frequency of the localized electromagnetic wave in the terahertz region of spectrum for the GPC are discussed.     

基于磁化等离子体缺陷层的一维新颖可调谐的光子晶体滤波特性

将磁化等离子体填充到一维光子晶体的缺陷层,构成了一种新颖可调谐的滤波器。讨论了TM波情况下滤波器的滤波特性,并推导了TM波下磁化等离子体传输矩阵。通过改进的传输矩阵方法分析得到:在不改变光子晶体结构的情况下,通过改变等离子体频率和外磁场可以实现滤波通道在光子禁带内较大带宽范围的移动,同时禁带中滤波通道出现的数目也能被等离子频率与外磁场的大小控制。     

Two-dimensional photonic crystals with a lattice defect: Spectrum of defect modes, localization of light, and formation of evanescent waves

Properties of an electromagnetic field localized in the defect modes of two-dimensional photonic crystals are studied. The defect-mode spectrum of these structures is calculated, electromagnetic field localization and channeling effects are analyzed, and the properties of the field inside and beyond a photonic crystal with a lattice defect are also studied. The calculations show that the electromagnetic field is localized in the defect mode of a photonic crystal in a region smaller than the wavelength. The dependence of the defect-mode spectrum on the parameters of the photonic crystal is investigated and possibilities for controlling the spectrum of defect modes are indicated. It is shown that the optical field leaving a photonic crystal possesses the properties of a evanescent wave, which means that spatial resolution substantially greater than the wavelength of the radiation can be achieved in the near field and opens up possibilities for using photonic crystals with a lattice defect in near-field optical microscopy. The possibility of externally controlling an optical field localized in the defect modes of a photonic crystals is demonstrated.     

Giant lateral shift of a light beam at the defect mode in one-dimensional photonic crystals

It is found that when a light beam is incident on a one-dimensional photonic crystal (1DPC) containing a defect layer, the lateral shifts of both the reflected and the transmitted beams are greatly enhanced near the defect mode of the 1DPC, whose location depends on the angles at a fixed frequency. The effect was studied by use of a Gaussian beam. The giant lateral displacement is due to the localization of the electromagnetic wave.     

一种研究一维掺杂光子晶体缺陷模的方法

建立一维掺杂光子晶体的谐振腔模型并研究其缺陷模特性,采用相干叠加的方法推导缺陷模的透射率及频率,建立一种研究缺陷模的方法——相干叠加法.将相干叠加法与特征矩阵法和共振理论进行比较,结果表明:相干叠加法具有特征矩阵法和共振理论的优点,并克服了特征矩阵法和共振理论的不足.相干叠加法是一种研究一维掺杂光子晶体缺陷模的更为有效的方法.     

Graphene-based one-dimensional photonic crystal

A novel type of one-dimensional (1D) photonic crystal formed by an array of periodically located stacks of alternating graphene and dielectric stripes embedded into a background dielectric medium is proposed. The wave equation for the electromagnetic wave propagating in such a structure is solved in the framework of the Kronig-Penney model. The frequency band structure of the 1D graphene-based photonic crystal is obtained analytically as a function of the filling factor and the thickness of the dielectric between the graphene stripes. The photonic frequency corresponding to the electromagnetic wave localized by a defect of the photonic crystal formed by an extra dielectric placed in the position of one stack of alternating graphene and dielectric stripes is obtained.