影响半导体量子点生长因素的分析

生长高面密度和尺寸均匀的量子点是半导体量子点实用化的关键.本文在已有研究工作的基础上,从材料本身的特性和生长量子点时的外界条件两方面总结了影响量子点生长的各种因素,从原理上分析了控制量子点有序生长的可能性的几种方法.     

确定性固态量子光源基础材料与器件

量子光源是量子通信和光量子计算的基础模块。光子的单光子性保证了通信的无条件安全,光子的高不可分辨性保证了计算方案的复杂度。在各类固态材料候选体系中,基于半导体量子点体系的单光子源和纠缠光子源保持着量子光源品质的最高纪录,展现了巨大的潜力。分子束外延是目前最适合制备固态半导体量子点的生长方法,超高真空、超纯材料、原位监测和生长过程中参数的高度可控等特点使其优势明显。为了实现同时具备高效率、高单光子纯度、高不可分辨性和高纠缠保真度的量子光源,量子点的材料生长、外部调控、钝化技术和测量技术等都需要系统优化提升。本文将综述基于分子束外延生长实现固态量子点体系量子光源的基础材料与器件的研究进展,讨论两种常见量子点的制备原理以及外延生长中各类参数对量子点品质的影响,包括背景真空、源料纯度、衬底温度、生长速率和束流比等。本文随后简介了外部调控、表面钝化、测量技术等手段优化量子光源器件性能的技术细节和实验进展,最后对量子光源在基础科学研究和量子网络构建中取得的进展进行总结,并对其实际应用与发展前景进行展望。     

有序纳米半导体量子点的自组织生长

纳米半导体量子点以其所具有的新颖光电性质与输运特性,正在各类量子功能器件中获得成功应用.作为纳米量子点的一种主要制备工艺,自组织生长技术正在受到人们的普遍重视.而如何实现具有尺寸与密度可控纳米量子点的自组织生长,更为材料物理学家们所广泛关注.因为这是由自组织方法形成的量子点最终能否器件实用化的关键.本文简要介绍了有序纳米量子点的自组织生长及其新近研究进展.     

氮化镓低维材料

本文综述了本实验室近年来在半导体低维材料制备和结构方面的一些进展,内容包括纳米线、纳米带、量子点、纳米固体的制备和结构特征、纳米线径向生长动力学和表面形貌稳定性.     

半导体单量子点的分子束外延生长及调控

Ⅲ-Ⅴ化合物半导体外延单量子点具有类原子的分立能级结构,能够按需产生单光子和纠缠多光子态,而且可以直接与成熟的集成光子技术结合,因此被认为是制备高品质固态量子光源、构建可扩展性量子网络最有潜力的固态量子体系之一。本综述的重点是介绍高品质单量子点的分子束外延生长及精确调控的方法。首先介绍了晶圆级均匀单量子点的分子束外延生长,并探讨了调控浸润层态和量子点对称性的生长方法;接下来概述了利用应变层调控量子点发射波长的方法,总结了几种常见的电调控单个量子点器件的设计原理;最后讨论了最近为实现优异量子点光源而开发的液滴外延生长技术。     

量子点材料的制备及应用研究进展

量子点具有发光效率高,光、热及化学稳定性好,简单的加工和成膜的特点,因此在各种光电器件方面具有广泛的应用前景,使其成为当今研究的热点.本论文从量子点的制备方法入手,全面综述了不同体系量子点的制备工艺及研究进展,重点分析了核壳量子点材料体系与制备手段对量子点生长机制、发光原理与性能提高的影响,总结了光电器件用量子点材料最佳材料体系和制备方法.通过国内外量子点材料和器件应用的研究进展对比分析,综合分析了高效量子点绿色制备与绿色应用的关键技术和面临的挑战,结合量子点在光电、催化、安全、生物等领域的应用,对其技术发展前景进行了展望.     

In原子在GaAs(001)表面的成核与扩散研究

近年来,半导体量子点特别是InAs量子点的基本物理性质和潜在应用得到了广泛研究。许多研究者利用InAs量子点结构的改变以调制其光电特性。本文采用液滴外延法在GaAs(001)表面沉积了不同沉积量的In(3 ML、4 ML、5 ML),以研究In的成核机制和表面扩散。实验发现,随着In沉积量的增加,液滴尺寸(包括直径、高度)明显增大。不仅如此,在相同的衬底温度下,沉积量越大,液滴密度越大。利用经典成核理论,计算了GaAs(001)表面In液滴形成的临界厚度为0.57 ML,计算的结果与已报道的实验一致。从In原子在表面的迁移和扩散,以及衬底中Ga和液滴中的In之间的原子互混原理解释了In液滴形成和形貌演化的机理。实验中得到的In液滴临界厚度以及In液滴在GaAs(001)上成核机理,可以为制备InAs量子点提供实验指导。     

半导体纳米结构的可控生长

应用MBE技术和SK生长模式,通过对研究材料体系的应力分布设计,生长动力学研究和生长工艺优化,实现了In(Ga)As/GaAs,InAlAs/AlGaAs/GaAs和InAs/InAl(Ga)As/InP无缺陷量子点(线)的尺寸、形状、密度和分布有序性的可控生长,这对进一步的器件应用特别重要.讨论了半导体纳米结构的空间有序性分布物理起因和退火的机制.     

R面、C面蓝宝石上生长的InGaN多层量子点的发光性质研究

采用表面钝化和MOCVD低温生长在蓝宝石(0001)面(即C面)和蓝宝石(1102)面(即R面)上形成了InGaN量子点,并构成了该量子点的多层结构.原子力显微镜测试的结果表明单层InGaN量子点平均宽约40nm,高约15nm;而多层量子点上层的量子点则比单层的InGaN量子点大.R面蓝宝石衬底上生长的InGaN量子点和C面蓝宝石衬底上生长的InGaN量子点相比,其PL谱不仅强度高,而且没有多峰结构.这是由于在C面蓝宝石衬底上生长的InGaN/GaN多层量子点沿生长方向[0001]存在较强的内建电场,而在R面蓝宝石衬底上得到的多层量子点沿着生长方向[1120]没有内建电场.InGaN量子点变温光致发光(PL)谱研究发现量子点相关的峰有快速红移现象,这是量子点系统所特有的PL谱特征.用在R面蓝宝石上生长的InGaN量子点作有源层有望避免内建电场的影响,得到高量子效率且发光波长稳定的发光器件.     

AlGaN量子结构及其紫外光源应用

AlGaN量子结构是实现高光效、高稳定紫外固态光源的核心。近年来,AlGaN半导体材料及其紫外光源应用研究取得了较大的进展。然而,AlGaN材料的生长制备只能在非平衡条件下完成,涉及的生长动力学问题十分复杂,制约了量子阱等结构品质的提高;材料带隙宽,p型掺杂难度大,激活效率低,限制了载流子注入;光学各向异性显著,不利于光从器件正面出射。因此,AlGaN基紫外、特别是深紫外波段器件性能还有待提高。本文梳理了AlGaN量子结构与紫外光源效率之间的关系,详细阐述和总结了有源区量子结构、p型掺杂量子结构以及光学各向异性调控等方面所面临的挑战及近年来的重要研究进展。     

Modification of pyroelectric crystal TGS using thermodynamic theory

Based on the Devonshire thermodynamic theory, the relationship λ/χ = Ps/C can be regarded as a method to increase the pyroelectric material figure of merit of ferroelectric crystals. Several modified TGS crystals doped with urea or co-doped with urea and other dopants have been grown. The effect of the urea dopant on crystal growth and pyroelectric properties was investigated. The pyroelectric figures of merit M (λ/ε) of the doped TGS crystals are obviously higher than those of pure TGS. Furthermore, the variations of λ/χ and Ps/C as a function of temperature for these doped TGS single crystals were measured, and analyzed according to the Devonshire thermodynamic model.     

高温闪烁晶体Ce:YAP的化学腐蚀形貌

本文报导了Ce:YAP晶体位错蚀坑的腐蚀条件;同时报导了几个主要晶面的位错蚀坑形貌,(100)面呈扁豆形,(010)面呈菱形,(101)面呈椭圆形,这些形状与各自晶面的对称性一致.通过蚀坑形貌在晶体横截面内观察到了小面生长核心区和熔质尾迹等缺陷,并分析了其成因.     

Structure and Growth Behavior of Myelin Figures

New morphological features were observed on cross sections of growing myelin figures by use of a scanning electron microscope with cryo-system. Growing internal structures of myelin figures could be observed directly, which were found to be similar to previous estimations made using polarizing optical microscope and X-ray diffraction measurements. However, peculiar growth behavior and structures which could not be observed, using optical and X-ray measurements, could be observed utilizing examination of myelin figure cross sections. The figures' peculiar structures consisted of fused and connected stacked bilayer regions as well as complicated structures which constituted the assembly mechanisms of the bilayers.     

Surface growth mechanisms and structural faulting in the growth of large single and spherulitic titanosilicate ETS-4 crystals

Morphological, surface and crystallographic analyses of titanosilicate ETS-4 products, with diverse habits ranging from spherulitic particles composed of submicron crystallites to large single crystals, are presented. Pole figures revealed that crystal surfaces with a-, b- and c- axes corresponded to 110, 010 and 001 directions, respectively. Thus, technologically important 8-membered ring pores and titania chains in ETS-4 run along the b-axis of single crystals and terminate at the smallest crystal face. Height of the spiral growth steps observed on 1 0 0 and 0 0 1 surfaces corresponded to the interplanar spacings associated with their crystallographic orientation, and is equivalent to the thickness of building units that form the ETS-4 framework. Data suggest that the more viscous synthesis mixtures, with a large driving force for growth, increased the two- and three-dimensional nucleation, while limiting the transport of nutrients to the growth surface. These conditions increase the tendency for stacking fault formation on 1 0 0 surfaces and small angle branching, which eventually results in spherulitic growth. The growth of high quality ETS-4 single crystals (from less viscous synthesis mixtures) occurred at lower surface nucleation rates. Data suggest that these high quality, large crystals grew due to one-dimensional nucleation at spiral hillocks, and indicate that under these conditions un-faulted growth is preferred.     

Etch studies on GaPO4 single crystals

Etch figures on gallium orthophosphate (GaPO₄) crystals are presented for the {0 0 1}, {0 1 0}, , and {1 0 1} faces. Primarily they are used in detecting possibly occurring domains of twinning. Generally, the etch figures of GaPO₄ show similarities as well as differences compared to those of low-quartz modifications of SiO₂ and AlPO₄.     

Investigation of experimental pole-figure errors by simulation of individual spectra

The errors in measuring the crystallographic texture described by pole figures are studied. A set of diffraction spectra for a sample of the MA2-1 alloy (Mg + 4.5% Al + 1% Zn) are measured, simulation of individual spectra on the basis of which the pole figures were obtained is performed, and their errors are determined. The conclusion about the possibility of determining the effect of errors of the diffraction peak half-width on the pole figure errors that was drawn in our previous studies is confirmed.     

Anomalous crystal optics of heterogeneous crystals

Various approaches to analysis of the characteristics of optically heterogeneous crystals (with the characteristic thicknesses of layering lamellae exceeding the light wavelength) are considered in the example of layered two-component heterogeneous structures. In the simplest cases, the quantitative information on the layering structure may be obtained from analysis of numerical characteristics such as the moments of the appearance of visible isogyres or the positions of isotropic compensation points. In more complicated cases, it may be reasonable to use the program specially written by the authors for constructing conoscopic figures of heterogeneous crystals. Finally, the heterogeneity of complex crystals may be characterized proceeding from the qualitative estimate of the degree of distortion of their conoscopic figures.     

Study of the influence of the parameters of an experiment on the simulation of pole figures of polycrystalline materials using electron microscopy

A two-dimensional mathematical model of a polycrystalline sample and an experiment on electron backscattering diffraction (EBSD) is considered. The measurement parameters are taken to be the scanning step and threshold grain-boundary angle. Discrete pole figures for materials with hexagonal symmetry have been calculated based on the results of the model experiment. Discrete and smoothed (by the kernel method) pole figures of the model sample and the samples in the model experiment are compared using homogeneity criterion χ², an estimate of the pole figure maximum and its coordinate, a deviation of the pole figures of the model in the experiment from the sample in the space of L₁ measurable functions, and the RP-criterion for estimating the pole figure errors. Is is shown that the problem of calculating pole figures is ill-posed and their determination with respect to measurement parameters is not reliable.     

Surface morphology and quality of potassium bichromate crystals obtained from aqueous solutions in relation to growth conditions

The characteristics of macrospiral layers on growth surfaces of potassium bichromate crystals and their quality are examined in relation to growth conditions. It was observed that the layers become thick and rounded, more inclusions are trapped and the crystal quality deteriorates with an increase in supersaturation, while an opposite effect is noted with an increase in growth temperature. The observations are discussed from the standpoint of crystal growth theories.     

Improved determination of fcc/bcc orientation relationships by use of high‐indexed pole figures

The use of variants to analyze fcc/bcc orientation relationships is demonstrated by EBSD data. Because of multiply occupied poles in the stereographic projections low indexed pole figures are not always suitable. This is mostly caused by the convolution of all scattered individual orientation data as the single poles cannot resolved in the pole figure. Pole figures of higher indexed lattice planes more reliably reflect the character of the orientation relationship since no overlapping of poles occurs. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)