KF-NaF熔盐中电解精炼制备高纯硅线

在NaF-KF混合共晶熔盐中电解精炼冶金级硅制备高纯硅线.采用循环伏安和交流阻抗法对预电解后的NaF-KF混合共晶熔盐及硅电极过程进行研究. 在循环伏安曲线-0.14 V位置上发现一个氧化峰,说明阳极过程为Si→Si⁴⁺;在循环伏安曲线-0.56 V处只发现一个还原峰,交流阻抗谱中也只有一个响应半圆与之对应,说明阴极的电极过程都为一步电荷转移过程,即为Si⁴⁺→Si. 电化学反应过程为扩散过程控制. 制备出的硅线纯度达到99.999%.     

过共晶铝硅合金电磁分离粗硅机理再讨论

本文通过试验和分析发现当前存在的两种关于初晶硅从过共晶铝硅合金中分离初晶硅的机理存在一定缺陷。通过配置ω(Si)=0.45的过共晶铝硅合金在3 kHz感应炉中精炼冶金级硅后以10μm·s-1速度进行定向凝固,得到试验所需的样品图。同时,为了探究在精炼过程以及下拉过程中初晶硅的富集情况,采取不同下拉距离以及淬火的方式探究在定向凝固前期过程中初晶硅的赋存状态.通过金相显微镜观察各种条件下初晶硅的赋存状态。利用相图分析出铝硅熔体在定向凝固过程中的性质。同时,使用商业软件COMSOL Multiphysics对过程中的温度场、流场以及磁场分布进行模拟.对分离机理做了更加完善的解释。     

高矫顽力的C0（70）Cu（30）合金纳米线阵列的制备及磁性研究

利用直流电化学沉积法,在多孔阳极氧化铝模板中首次制备出了具有[220]取向的单晶面心立方结构的CoCu固溶体合金纳米线阵列,其Co含量高达70%.透射电子显微镜显示纳米线均匀连续,具有较高的长径比,约为300.磁性测量表明所制备的Co（70）Cu（30）合金纳米线具有超高的矫顽力Hc//=2438 Oe（1 Oe=79.5775 A/m）和较高的矩形比S//=0.76,远高于以往报道的CoCu合金纳米线的磁性,分析表明磁性好的主要原因是由于较高Co含量和高形状各向异性.通过磁性测量和模型计算,得到Co（70）Cu（30）合金纳米线阵列在反磁化过程中遵从对称扇型转动的球链模型,并从结构的角度分析了Co（70）Cu（30）合金纳米线阵列的反磁化行为.     

离子交换-电感耦合等离子体质谱法测定锆锡合金中痕量杂质元素

锆锡合金具有优异的核性能,被广泛应用于核工业领域,其中的杂质元素含量通常控制在很低水平。电感耦合等离子体质谱(ICP-MS)是一种可进行多元素同时分析的无机质谱技术,已普遍应用于冶金分析领域。ICP-MS具有图谱简单、灵敏度高等优点,但也不可避免地存在质谱干扰问题,需要用其他辅助手段予以解决。ICP-MS测定锆锡合金中Cd含量时其所有同位素均被Zr和Sn的多原子离子或同质异位素干扰,需要进行基体分离。建立了ICP-MS测定锆锡合金中Cd, Al, B, Mg等11种痕量杂质元素含量的方法,其中Cd, Mg等6种元素经微型阳离子交换柱分离富集后测定,同时采用干扰校正方程校正了~(113)In对~(113)Cd的潜在干扰;其他杂质元素离子不经分离直接采用内标法测定。在稀氢氟酸介质中, Cd~(2+)等杂质离子被吸附在阳离子交换柱上,而Zr则形成络阴离子不被吸附,杂质元素与基体元素Zr分离并获得富集。杂质离子以盐酸洗脱后用ICP-MS检测,消除了测定Cd时Zr基体对其产生的干扰。主要研究了Cd元素与Zr基体的分离条件,包括上柱酸度、淋洗酸度、洗脱酸度、进样浓度和流速,同时考察了其他杂质元素在经优化实验获得的分离条件下的行为。结果表明, Mg, Mn, Co, Cu, Pb 5种元素具有与Cd类似的分离富集行为,可以同时进行测定。最终获得的分离条件为:流速2 mL·min~(-1),泵入2 mL浓度为50 mg·mL~(-1)的样品(上柱酸度为0.5%氢氟酸),用0.5%氢氟酸淋洗9 min,用10%盐酸洗脱4.5 min后测定。方法的分离周期约为15 min,各元素的检出限介于0.005 8～0.21μg·g~(-1)之间,回收率在85%～110%之间, RSD值小于5%。采用本方法测定了Zr-zirlo核级锆锡合金样品中11种杂质元素的含量,结果的精密度和准确度均满足相应产品标准的要求。     

杂质对吸附系统O/RhxPt1-x衬底、合金(110)表面偏析的影响

构造了考虑吸附与偏析相互作用情况下无序二元合金Rhx Pt1-x(110)吸附氧表面的原子集团模型,其中O的覆盖度为0.5;构造了考虑杂质Ni,Cu,W对合金可能产生影响的吸附表面原子集团模型,杂质的掺入采用替位式.应用recursion方法计算了合金表面的环境敏感镶嵌能和电子结构.环境敏感镶嵌能计算表明杂质Ni,Cu和W均使O吸附RhxPt1-x(110)合金表面偏析情况发生逆转,Ni对Rh-Pt合金偏析的影响最大,其次是Cu,W对合金偏析的影响最小;电子结构计算表明杂质Ni,Ca W存在于合金表面时,使Rh与O的共价相互作用减弱,使表面偏析发生逆转,Pt再次偏析于表面.     

硫酸锌(镉)盐的动态吸附提纯方法研究

硫酸锌和硫酸镉是制备荧光材料的重宴原料之一.实践证明,这些盐类中的重金属杂质Cu、Fe、Co、Ni、Pb、Cr和Mn等的含量,如超过0.1~0.3ppm,将会对荧光材料的发光性能产生严重影响.因此,一般市售的试剂级硫酸锌(镉)只有经过仔细提纯后方可使用.     

铵态氮肥和尿素中植物营养元素含量比较分析

应用ICP-MS研究了(NH4)2SO4和CO(NH2)2肥料中植物营养元素的含量,以期为今后的氮肥肥效试验和农业生产提供基础数据.结果表明,(NH4)2SO4和CO(NH2)2肥料中含有多种植物必需元素,包括Mg,P,K,Ca,Mn,Ni,Cu,zn和Mo,含量达到μg·g-1级的有Mg,P,K,Ca,Mn和Fe;含量为ng·g-1级的有Ni,Cu,Zn和Mo,除了Mo以外,(NH4)2SO4中的其他元素的含量均显著高于尿素.(NH4)2SO4和CO(NH2)2肥料中有益元素有Na,Al,Si,Co和Se,其中Al和Co的含量(NH4)2 SO4显著高于CO(NH2)2; Si的含量CO(NH2)2显著高于(NH4)2SO4尿素未检测到Se和Fe.由于上述元素对于植物的生长发育有明显影响,所以在研究不同形态肥料差异和氮肥肥效时,应当全面分析影响因素.建议在做氮肥肥效试验时选择纯度高、杂质元素含量少的单一化合物肥料.     

强辐射催化法提纯多晶硅

将低纯度的金属硅,提纯成可用于制造太阳能电池的高纯硅材料的主要关键, 是去除材料中的硼杂质.本文提出了一种采用特殊的造渣过程以去除硼杂质的新方法.在这种新方法中,为了促进快速的化学反应,采用高密度的光子作为催化剂,以达到太阳能级硅材料的标准.本文对使用这种新的强辐射催化法炼硅的高温工具、冶炼方法、材料配方、材料的混合、以及渣剂的分离等关键技术,进行了详尽的公开和讨论,并在强辐射光催化原理的研究方面提出了一些探索性的机理.为了方便读者使用本文所提出的方法,建立起一套完整的提炼太阳能级硅材料的工业系统,本文也 关键词： 多晶硅提纯 光催化 太阳炉 除硼 除磷 多晶硅     

Cu-Ni合金结构的分子动力学模拟

采用EAM作用势对Cu Ni合金的结构特性进行了MD模拟研究 .通过FZ结构因子可发现 ,Cu含量的变化对结构因子的波动影响很小 ,键取向序参数和键对也表现出相似的变化规律 ,这表明液态Cu Ni合金对成份变化不敏感 ,体系中的化学序较弱 .将Cu70 Ni3 0 合金熔体的FZ结构因子与Waseda的实验结果进行对比 ,发现二者吻合得较好 ,表明EAM势可以很好地描绘Cu Ni合金的结构特性 .在快速冷却过程中 ,除了Cu2 0 Ni80 合金外 ,其他合金成份的双体分布函数的第二峰都发生了劈裂 ,标志着体系最终形成了非晶结构 ,而Cu2 0 Ni80 合金的双体分布函数却表现出晶体峰的特征 .通过对键取向序参数、键型指数以及铜镍原子的有效扩散系数的分析表明 ,在快速冷却过程中 ,Cu2 0 Ni80 合金最终形成了hcp晶体结构     

对高三课本中讨论硫酸铜溶液电解部分的意见

在高三物理课本第84节中,举了两个电解反应的例子,一个是盐酸溶液,另一个是硫酸铜溶液。这两种电解质的溶液都是属于酸性的。关于盐酸溶液的电解反应的分析: 在阴极 2H~++2e→H_2↑在阳极 2Cl~--2e→Cl_2↑是对的,但对硫酸铜溶液的电解反应的分析就有提出再讨论之点:原书中的反应如下: CuSO_4→Cu~(++)+SO_4~= 在阴极 Cu~(++)+2e→Cu 在阳极 SO_4~=-2e→SO_4 2SO_4+2H_2O→2H_2SO_4+O_2↑关于阴极Cu的析出,这种解释是对的;但是关于氧的放出,此种解释就与实际不符合。因为在CuSO溶液中,还有H_2O→H~++OH~-的反应存在,因此在阳极放出氧,可能是两种反应的结果:即除了SO_4~=按以下反应放电的初反应:     

Mechanism for the Correlated Swinging of Photoluminescence Intensity and Peak Energy Shift with Sizes of Nanoscale Si Particles

Based on the quantum confinement-luminescence center model, we focus on the relationship between the photoluminescence (PL) spectra and sizes of nanoscale silicon particles.We find that when there are two kinds of luminescence centers (LC) in the oxide layer surrounding the silicon particles, both the integrated PL intensity and the spectral peak position swing with reducing the sizes of silicon particles, which is different from the monotonous blueshift of peak position predicted by quantum confinement model. By changing the concentrations of LC we find the correlation between the spectral peak position and the integrated PL intensity when the size of silicon particles is reduced. The effects of other parameters such as the half width of size distribution and the position of photon emission levels of LC are also found to be important.     

Development of silicon purification by strong radiation catalysis method

Using a new type of solar furnace and a specially designed induction furnace,cost effective and highly efficient purification of metallurgical silicon into solar grade silicon can be achieved.It is realized by a new method for extracting boron from silicon with the aid of photo-chemical effect.In this article,we discussed the postulated principle of strong radiation catalysis and the recent development in practice.Starting from ordinary metallurgical silicon,we achieved a purification result of 0.12 ppmw to 0.3 ppmw of boron impurity in silicon by only single pass of a low cost and simple process,the major obstacle to make ’cheap’ solar grade silicon feedstock in industry is thus removed.     

Removal of oxygen from silicon by electron beam melting

Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10^?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.     

非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

采用重掺杂的p型微晶硅来改善前电极掺硼氧化锌 (ZnO:B) 和窗口层p型非晶硅碳 (p-a-SiC) 之间的非欧姆接触特性. 通过优化插入层p型微晶硅的沉积参数 (氢稀释比H₂/SiH₄、硼掺杂比B₂H₆/SiH₄) 获得了较薄厚度下 (20 nm) 暗电导率高达4.2 S/cm的p型微晶硅材料. 在本征层厚度约为150 nm, 仅采用Al背反射电极的情况下,获得了效率6.37%的非晶硅顶电池(V_oc=911 mV, FF=71.7%, J_sc=9.73 mA/cm²), 开路电压V_oc和填充因子FF均较无插入层的电池有大幅提升. 关键词： 氧化锌 p型微晶硅 非晶硅顶电池 非欧姆接触     

Ignition of fuel/air mixtures by radiatively heated particles

The current work examines the ignition of fuel/air mixtures by particles which have been heated up rapidly by intense electromagnetic radiation from an infrared laser source. Experiments have been conducted at relatively large beam sizes, where ignition times are a function of the irradiance. Particles in the form of fine powders were placed into a chamber filled with ignitable butane/air mixtures. Possible ignition is shown for a range of carbon based materials including different carbon blacks, graphite, the C₆₀ fullerene and diamond powder, as well as for non-reactive powders such as silicon carbide, iron-, copper- and silicon oxides. The irradiance was varied independently and results are shown to become independent of the size of the irradiated area if a sufficiently large area is illuminated. The particle size was found to have a significant impact on the time to ignition. Specifically, finer particles lead to shorter ignition times due to the higher surface area to volume ratio which reduces both particle and gas heating times. Ignition could be achieved across the whole flammability range of butane/air using carbon black and silicon carbide particles, although, near the rich flammability no ignition could be obtained with carbon black.     

在硅片上沉积厚二氧化硅的火焰水解法研究

用火焰水解和高温烧结的方法在单晶硅基片上制备了厚SiO2和B2O2-P2O2-SiO2光波导包层材料。并用扫描电镜(SEM)和X射线粉末衍射(XRD)方法对其微观形貌和物相结构进行了观察和检测。重点对硅基片上沉积厚SiO2时的龟裂和析晶问题进行了深入研究。从扫描电镜照片可以看出．火焰水解法形成的SiO2粉末呈多孔的蜂窝状结构。这种粉末具有很高的比表面积,因而很容易烧结成玻璃。X射线衍射图谱表明．这种粉末是完全非晶态的。经过烧结以后,从扫描电镜照片可以明显看出硅基片上的SiO2薄膜出现龟裂。同时,X射线衍射测试结果表明有少量SiO2析晶。而通过在SiO2中掺入B2O3、P2O5,上述龟裂和析晶完全消失。用这种工艺制备的SiO2波导包层材料厚度达到20μm以上,表面光滑、没有龟裂,而且是完全玻璃态的,可以用于制备性能优良的各种硅基二氧化硅波导器件。     

Anodic oxidation during electrostatic bonding

During electrostatic bonding, anodic oxidation of the anode material, for instance silicon, is thought to be the essential step in the bonding mechanism, leading to the formation of a permanent, strong and vacuum-tight bond. Despite the perceived importance of this step in the bonding mechanism of this well-established bonding technique, there is little experimental evidence for anodic oxidation during electrostatic bonding. One reason is that a thin (approximately 10–20?nm) amorphous anodic oxide layer is difficult to detect adjacent to an amorphous cation-depleted glass. Here, silicon–Pyrex and aluminium–Pyrex electrostatic bonds are made and the anodic oxidation process is studied directly using transmission electron microscopy. The consumption of silicon is demonstrated by the movement of the crystalline–amorphous interface compared with a marker under the original silicon–Pyrex interface. The formation of an anodic silica layer can also be demonstrated using electron-energy-loss spectrometry. An amorphous reaction layer 5–20?nm thick is formed during the bonding cycle. For aluminium anode materials bonded at 450°C a nanocrystalline γ-Al₂O₃ reaction layer is formed, which can be readily detected by transmission electron microscopy. At a bonding temperature of 350°C, no such crystalline reaction layer can be detected between Pyrex and aluminium.     

Accurate controlled deposition of silver nanoparticles on porous silicon by drifted ions in electrolytic solution

In this study, a low-cost, simple, single-step low-voltage operation and a well-controlled method for deposition of uniformed and unique size distributions of silver nanoparticles (AgNPs) on the porous silicon (PS) layer were achieved via controlling the drift velocity of electrons in an aqueous solution of AgNO₃. The laser diode of 530 nm and 60 mW/cm² laser wavelength and illumination power density was employed to prepare PS layer by a laser-assisted etching process. The PS layer was incorporated on the platinum disk cathode electrode, and a stainless steel plate as an anode was employed. Low applied operating voltage of about 3V DC at different drift currents of 10, 20, 30 and 40 mA for 2 min was applied to sustain the drift motion of Ag²⁺. Structural properties of AgNPs layer were examined via the field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD) pattern. These measurements exposed that AgNPs were adjusted by controlling the drift current, and a uniform AgNPs with specific unique sizes were obtained. Grain size, specific surface area and nucleation sites of metallic AgNPs were intensely influenced by the drift current.     

Dielectric layer-dependent surface plasmon effect of metallic nanoparticles on silicon substrate

The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of dielectric layers with different thicknesses leads to the varied resonance wavelength and scattering cross section and consequently the shifted photocurrent response for all wavelengths. These different behaviours are determined by whether the dielectric layer is beyond the domain where the elcetric field of metallic plasmons takes effect, combined with the effect of geometrical optics. It is revealed that for particles of a certain size, an appropriate dielectric thickness is desirable to achieve the best absorption. For a certain thickness of spacer, an appropriate granular size is also desirable. These observations have substantial applications for the optimization of surface plasmon enhanced silicon solar cells.     

Enhanced light trapping for the silver nanoparticles embedded in the silica layer atop the silicon substrate

The optical properties of the structures with silver nanoparticles embedded in the silica layer atop the silicon substrate are simulated by the finite-difference time-domain method. The effects of nanoparticle size, period, silica layer thickness, and the angle of incidence of the illuminated light on optical transmissions are studied. It is found that there is the red-shift for the maximum of the total light transmitting into the silicon substrate as the silica layer thickness increases. The electric field intensity distributions and the average power densities for the structure with largest optical transmission is studied, and the strong electric field intensities are found in the silica regions surrounding to the silver nanoparticles, which can help the light energy going into the silicon substrate. By controlling the structure parameters, the optical transmissions of the structures with the silica layer can have higher optical transmissions than the cases without the silica layer. The silica layer plays the role as the graded refractive index layer between the air and the silicon substrate, and the light power from the incident wave can transmit into the silicon substrate with less optical reflections for choosing a suitable silica layer thickness. A guideline to design the structures with high optical transmissions for the solar spectra is given. This study cannot only be useful for the solar cells applications, but also other antireflection applications.