Bi2Pb2V2O10的晶体结构

使用X射线单晶衍射法测定了Bi₂Pb₂V₂O₁₀的结构。该晶体属三斜晶系,空间群为C₁¹-P1,单位晶胞内化学式数Z=1,晶胞参数为:a=7.084(4)?,b=7.278(3)?,c=5.587(3)?,α=111.91(5)°,β=95.01(6)°,γ=108.86(4)°,V=245.70?³,D_x=7.35g/cm³,μ(MoK_α)=678,94cm^-1,F(000)=456。用Patterson函数分析及Forier技术测定了结构,对原子坐标、各向同性及各向异性热参数进行了最小二乘方修正,R=0.079。结构分析表明,Bi₂Pb₂V₂O₁₀的Pb原子与O原子形成八角十二面体,Bi原子与O原子形成六角多面体。两个共棱的Pb—O多面体与两个共棱的Bi—O多面体相连,并沿bc平面无限延伸。讨论了吸收的影响。最后,将Bi₂Pb₂VO₁₀的结构与Pb₂SO₅的结构进行了比较。 关键词：     

PbBi3低温合金薄膜的制备和超导性质

铋(Bi)和铅(Pb)都是重元素,有很强的自旋-轨道耦合作用,由于原子半径接近,可形成丰富的原子取代合金结构.尽管对高温合金相有了较深入的研究,但对其低温物相的结构和超导物性的认识还很不全面.本文采用低温共沉积和低温退火的方法,在Si(111)-(7×7)衬底上制备了一种基于Bi(110)单晶结构中部分Bi原子被Pb取代的铅铋合金低温相超薄膜新结构,利用扫描隧道显微术(STM)对其结构和电子学性质进行了表征.通过结构表征,确定了合金薄膜表面呈现2^1/2×2^1/2R45°重构的PbBi₃合金相,其母体Bi(110)结构中25%的Bi原子被Pb取代了.通过STM谱学测量,发现合金相PbBi₃为超导相.变温实验表明, PbBi₃相的超导转变温度为6.13 K.在外加垂直磁场下出现的磁通涡旋结构表明PbBi₃薄膜是第Ⅱ类超导体,估算出上临界磁场的下限为0.92 T.测量了由Bi(110)-PbBi₃组成的共面型和台阶型正常金属-超导体异质结中...     

(Bi,Pb)2Sr2Ca2Cu3Oy单相样品的超导电性与载流子浓度

对(Bi,Pb)₂Sr₂Ca₂Cu₃O_y单相样品进行不同条件下的热处理,通过X射线衍射、电阻-温度关系、交流磁化率,以及Hall系数等测量,发现样品均具有较好的单相性,随着热处理条件的变化,其超导转变中点温度(T_c)有规律地分布在100—110K之间,T_c随载流子浓度(n_H)的增加而升高。实验结果表明,热处理条件对样品的相结构、超导 关键词：     

T*相超导体(Bi,Sr)2(Y,Ce)2Cu2Oy的性质研究

研究了T^*相超导体（Bi，Sr）₂（Y，Ce）₂Cu₂O_y的成相规律，发现缓冷对T^*相单相样品的制备是有利的．淬火样品的主相物质为Ce₂Y₂O₇，完全不含T^*相结构．在室温到熔化温度的范围，热分析未观察到结构相变．在240—460℃，相对每个Cu原子超导体失氧约0.1个氧．氧气中烧结并缓冷到室温的样品在30K出现零电阻现象 关键词：     

BaO-Li2O-B2O3三元系中BaB2O4-Li2B2O4和BaB2O4-Li2O截面相平衡关系的研究

本文用X射线和差热分析方法对BaO-Li₂O-B₂O₃三元系中的两个截面:BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O作了研究。在BaB₂O₄-Li₂B₂O₄赝二元系中发现了一个新的化合物4BaB₂O₄·Li₂B₂O₄。化合物在930±3℃由包晶反应形成,并与Li₂B₂O₄形成共晶反应。共晶温度为797±3℃,共晶点组分为79mol％Li₂B₂O₄。在BaB₂O₄-Li₂O截面中也存在化合物4BaB₂O₄·Li₂B₂O₄,其包晶反应温度从930±3℃随Li₂O含量增加下降到908±3℃。在组分60mol％Li₂O处形成另一个新的化合物2BaB₂O₄·3Li₂O。该化合物在630±3℃也是由包晶反应形成,并与Li₂O和Li₂CO₃分别形成共晶反应,共晶温度分别为400±3℃和612±3℃。在BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O体系中都没有观察到固溶体。用计算机程序分别对化合物4BaB₂O₄·Li₂B₂O₄和2BaB₂O₄·3Li₂O的X射线粉末衍射图案进行了指标化,其结果:4BaB₂O₄·Li₂B₂O₄的空间群为Pmma,a=13.033?,b=14.630?,c=4.247?,每个单胞包含两个化合式单位;2BaB₂O₄·3Li₂O的空间群为Pmmm,a=4.814?,b=9.897?,c=11.523?,每个单胞也含有两个化合式单位。 关键词：     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg_1/3Nb_2/3)O_{3< /sub>-0.38PbTiO3( 0.62PMN-0.38PT)单晶的折射率，给出了该温度下折射率色散的Sellmeier方程.研究了能带 结构与折射率的关系，计算了样品的Sellmeier光学系数：对no，E0=5.50eV,λ0=0.2 26μm，Ｓ０=1.004×10¹⁴m^-2，Ed=28.1 0eV；对ne，Ｅ0=5.57eV,λ 0=0.223μm，S0=1.017×10¹⁴m^-2，Ed=28.10eV.A BO3型钙钛矿材料中，BO6八面体基元决定了晶体的能带结构，对折 射率产生重要影响. 关键词： PMNT单晶 折射率 Sellmeier光学系数}     

Pb2，PdPb2分子的势能函数

采用Gaussian 98程序,运用B3LYP方法,对Pd和Pb原子采用收缩价基组LANL2DZ,对Pb₂和PdPb₂分子的微观结构进行了理论计算. 由于Pb₂分子离解后一个Pb原子处于基态,另一个Pb原子处于激发态,采用最小二乘法拟合Pb₂分子的势能函数,选用的函数形式为Murrell-Sorbie势能函数加上开关函数. 使用多体展式理论导出了势函数中的参数进而给出PdPb₂分子基态势函数的解析表达式,其势能面准确地复现了PdPb₂分子的两个稳定构型(C_2V和C_∞v)及其能量关系. 关键词： 2')" href="#">Pb₂ 2')" href="#">PdPb₂ 势能函数     

LiKSO4的无公度相

本文用多晶X射线衍射配合差热分析的方法研究了LiKSO₄室温以上的相变。发现当温度在熔点以下到675℃之间,晶体结沟与α-K₂SO₄的高温相同构,α相最可能的空间群为P6₃/mmc.在T_i=675℃以下出现调制结构,类似K₂WO₄,K₂MoO₄等的无公度相;参数κ的值由0.492(640℃)而随温度变化。在470℃出现整合相变κ=0.500,整合后的结构为室温相的超点阵。然后在439℃转变为室温相(空间群为P6₃)。 关键词：     

Bi2Sr2CaCu2O8单晶a-b平面热电势率的各向异性

测量了Bi₂Sr₂CaCu₂O₈单晶a方向的热电势率S_a和b方向的热电势率S_b与温度T的关系,发现在a-b平面内热电势率存在各向异性。认为S_a与S_b的差异来源于b方向的调制结构,并用扩散热电势率S_d,声子曳引热电势率S_g和相关跳跃热电势率S_h三种贡献,对实验结果进行了 关键词：     

非晶态Cu56Zr44合金的结构及其等温退火晶化过程的研究

利用X射线衍射技术、差示扫描量热分析技术和透射电子显微镜研究了非晶态Cu₅₆Zr₄₄合金的结构及其等温退火条件下的晶化过程.实验结果表明,非晶态Cu₅₆Zr₄₄合金在室温下的短程结构类似于硬球无规密堆积分布.在703K过冷液相区内等温退火时发现,当退火时间为3min时,晶化产物主要为Cu₈Zr₃相;当退火时间为6min时,Cu₈Zr₃关键词： 非晶态 56Zr₄₄合金')" href="#">Cu₅₆Zr₄₄合金 结构 等温退火     

快中子辐照直拉硅中受主和施主的研究

通过傅里叶红外光谱、正电子湮没寿命谱和Hall技术研究了高剂量快中子辐照直拉硅的辐照 缺陷、电阻率、载流子迁移率、载流子浓度随退火温度的变化.经快中子辐照，直拉硅样品 的导电类型由n型转变为p型.在450和600℃热处理出现两种受主中心，分别由V2_{2O22，V22O，VO22，V-O-V及V44型缺 陷引起，这些缺陷态的出现使得样品中空穴浓度迅速增加；大于650℃热处理这些受主态 缺陷迅速消失， 关键词： 快中子辐照 空位型缺陷 受主 施主}     

微结构对Eu掺杂Bi4Ti3O12铁电薄膜铁电性能的影响

采用金属有机物分解法在Pt/Ti/Si(111)基底上制备了退火温度分别为600℃,650℃,700℃的Bi_3.15Eu_0.85Ti₃O₁₂(BET)铁电薄膜,并对其结构及铁电性能进行了测试,再使用扫描探针显微镜对BET薄膜的电畴翻转进行了实时观测.BET薄膜c畴发生180°畴变的最小电压为+6V,而r畴由于其高四方性,即使极化电压增至+12V也不会发生翻转.薄膜的铁电性主要源于c畴的极化,随着退火温度的升高,c畴的区域面积增加,BET薄膜的剩余极化强度随之增大.退火温度为700℃的BET薄膜剩余极化强度达到84μC/cm². 关键词： 铁电薄膜 电畴翻转 扫描探针显微镜     

Synthesis and photocatalytic property of ZnSe flowerlike hierarchical structure

Spherical flowerlike hierarchical structure of ZnSe(en)_0.5 was synthesized via a solvothermal route in the NH₃·H₂O-ethylenediamine (en)-N₂H₄·H₂O system at 180 °C for 24 h. The hierarchical structure is assembled from lots of regular nanosheets. The ZnSe(en)_0.5 was further converted into pure hexagonal ZnSe by annealing in a flowing nitrogen gas at 500 °C for 1 h with morphology preserved. The formation mechanism of ZnSe was discussed. The UV-visible absorption spectrum and PL spectrum of the ZnSe spherical flowerlike hierarchical structure were measured. In addition, photocatalytic activity of the ZnSe flowerlike structure for the degradation of methyl orange under the irradiation of the simulated sunlight was investigated. The excellent catalytic activity for the degradation of methyl orange was found and the possible mechanism of the photocatalytic activity is also proposed.     

Co掺杂纳米ZnO微结构的正电子湮没研究

利用正电子湮没技术研究了10 at.% Co掺杂的Co₃O₄/ZnO纳米复合物中退火对缺陷的影响. 利用X射线衍射(XRD)测量了Co₃O₄/ZnO纳米复合物的结构和晶粒尺寸. 随着退火温度升高,Co₃O₄相逐步消失,ZnO晶粒尺寸也有显著增加. 经过1000 ℃以上退火后,Co₃O₄相完全消失,并出现了CoO的岩盐结构. 正电子湮没寿命测量显示出Co₃O₄ /ZnO纳米复合物中存在大量的Zn空位和空位团. 这些空位缺陷可能存在于纳米复合物的界面区域. 当退火温度达到700 ℃后Zn空位开始恢复,空位团也开始收缩. 900 ℃以上退火后,所有空位缺陷基本消失,正电子寿命接近ZnO完整晶格中的体态寿命值. 符合多普勒展宽谱测量也显示Co₃O₄ /ZnO纳米复合物经过900 ℃以上退火后电子动量分布与单晶ZnO基本一致,表明界面缺陷经过退火后得到消除. 关键词： ZnO 界面缺陷 正电子湮没     

Formation of rippled surface morphology during Si/Si （100） epitaxy by ultrahigh vacuum chemical vapour deposition

The Si epitaxial films are grown on Si (100) substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature T_g are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with T_g increasing from 650 ℃ to 700 ℃. Rippled surface morphologies are observed at T_g = 700 ℃, 730 ℃, and 800 ℃, but disappear when T_g = 750 ℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.     

Phase evolution studies of sol�Cgel derived lead zirconate titanate (PZT) nanopowder using X-ray diffraction and X-ray photoelectron spectroscopy

We report here the formation of single phase lead zirconate titanate (PZT) nanopowder with composition Pb(Zr_0.52Ti_0.48)O₃ and average crystallite size 12?C20?nm, synthesized by sol?Cgel process. The phase evolution of PZT gel powder, heat treated at temperatures 550, 650 and 800°C was monitored by X-ray diffraction (XRD) and X-ray photo-electron spectroscopy (XPS). The high resolution XPS spectra of Pb4f, Zr3d, Ti2p and O1s show that PZT with pure perovskite structure is obtained at 800°C while at lower temperatures pyrochlore phase co-exists with perovskite phase. The XRD results also support this analysis. We have also identified the pyrochlore phase using XPS by analyzing the corresponding variations in the FWHM values, peak positions and the separation between the spin doublets of Pb, Zr and Ti associated with it. The composition of the final powder obtained with pure perovskite structure is calculated and is close to the designed value.     

Annealing effect on the optical properties in Si delta-doped Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures

The optical properties of Si delta-doped Al_0.24Ga_0.76As/In_0.15Ga_0.85As/GaAs pseudomorphic high electron mobility transistor structure (PHEMTs) are estimated after the process of rapid thermal annealing (RTA) in the temperature range 500–750°C. After layer intermixing and decrease of 2DEG densities of PHEMTs just occurs around the annealing temperature of 650°C, the 12H transition peak at 1.354 eV above the annealing temperature of 650°C is newly observed from the photoluminescence (PL) and photoreflectance (PR) spectra. From the results of PL and PR measurements in the annealed PHEMTs, it is found that remarkable modification of band profile in InGaAs QW occur at annealing temperature above 650°C.     

Improved dielectric properties of (Pb,Ca)TiO3 thin films prepared by metal-organic decomposition method

(Pb,Ca)TiO₃ (PCT) thin films have been deposited on Pt/Ti/SiO₂/Si substrate by metal-organic decomposition (MOD) technique. The film processing parameters such as drying and annealing temperatures have been optimized to obtain good-quality PCT films. Compositional analysis of the film has been studied by X-ray photoelectron spectroscopy (XPS). The effect of the annealing temperature on the crystalline structure, microstructure and electrical properties have been investigated by X-ray diffraction, atomic force microscopy (AFM) and impedance analyzer, respectively. Amorphous PCT films form at 350 °C and crystallize in the perovskite phase following the isothermal annealing at ?650 °C for 3 h in oxygen ambient. Typical tetragonal structure of the PCT film is evidenced from X-ray diffraction pattern. The grain size in the PCT films increases with an increase in annealing temperature. Significant improvement in the dielectric constant value is observed as compared to other reported work on PCT films. The observed dielectric constant and dissipation factor at 100 kHz for 650 °C annealed PCT films are 308 and 0.015, respectively. The correlation of the film microstructural features and electrical behaviors is described.     

退火对电子束热蒸发193nm Al2O3/MgF2反射膜性能的影响

设计并镀制了193nm Al₂O₃/MgF₂反射膜，对它们在空气中分别进行了250—400℃的高温退火，测量了样品的透射率光谱曲线和绝对反射率光谱曲线.发现样品在高反射区的总的光学损耗随退火温度的升高而下降，而后趋于饱和.采用总积分散射的方法对样品在不同退火温度下的散射损耗进行了分析，发现随着退火温度的升高散射损耗有所增加.因此，总的光学损耗的下降是由于吸收损耗而不是散射损耗起主导作用.对Al₂O₃材料的单层膜进行了同等条件的退火处理，由它们光学性能的变化推导出它们的折射率和消光系数的变化，从而解释了相应的多层膜光学性能变化的原因.反射膜的反射率在优化联系、镀膜工艺与退火工艺的基础上达98％以上. 关键词： 193nm 反射膜 退火 光学损耗 吸收     

Phase transformations and structure of Ni–Mn–In alloys with varying ratio Ni/Mn

The fine structure of Ni–Mn–In alloys has been studied when manganese atoms are substituted for nickel atoms in an annealing state. The concentration dependence of the critical temperatures and the structures of the alloys have been discussed. It has been found that, as manganese atoms replace nickel atoms, the structure after annealing is changed from a two-phase (L2₁ + martensite) to single-phase L2₁ structure. The martensitic transformation in Ni₄₇Mn₄₂In₁₁ alloy is accompanied by the formation of modulated 14M martensite.