Hg1－_xCd_xTe外延薄膜的自由载流子吸收

讨论了Ｈｇ１－ｘＣｄｘＴｅ外延薄膜的自由载流子吸收光谱，分析了外延层的纵向组分分布及Ｔｅ沉淀物对吸收曲线的影响．结果表明，由于外延薄膜存在着纵向组分的不均匀性，其吸收特性与体材料有区别；对某些透过率较低的样品，则应考虑Ｔｅ沉淀物对吸收的贡献     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术，分别沉积Ti和Ti/Al膜，经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序，分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27     

真空退火对355nm Al2O3/MgF2高反射薄膜性能的影响

 采用电子束蒸发沉积技术制备了355nm Al₂O₃/MgF₂ 高反射薄膜，并在真空中进行不同温度梯度的退火，用X射线衍射（XRD）观察了薄膜微结构的变化，用355nm Nd：YAG脉冲激光测试了薄膜的激光损伤阈值，用Lambda 900光谱仪测试了薄膜的透过和反射光谱。结果表明在工艺条件相同的条件下真空退火过程对薄膜的性能有很大的影响，退火温度梯度越小的样品，吸收越小，阈值越大，并且是非晶结构。选择合适的真空退火过程可以减少355nm Al₂O₃/MgF₂ 高反射膜的膜层吸收，提高薄膜的激光损伤阈值。     

外延生长La0.7Sr0.3MnO3薄膜厚度对缺陷影响的慢正电子分析

采用脉冲激光沉积方法在(LaAlO₃)_0:3(Sr₂AlTaO₆)_0:7衬底上外延生长了La_0.7Sr_0.3MnO₃薄膜,并采用慢正电子束方法分析了薄膜在不同厚度和不同退火气氛下参数S的变化. 分析表明,薄膜中包含两种机制引入的氧空位,分别是薄膜生长气氛中氧压偏低造成薄膜的氧缺乏和由于薄膜应变引入空位型缺陷. 当薄膜厚度较薄时,应变造成的晶格畸变化比较大,当薄膜的厚度大于11 nm时,薄膜的应变驰豫已经比较完全. 原位退火的样品中正电子主要是被氧缺乏引起的氧空位捕获. 在氧气中退火的样品,S随厚度的变化反映了应变对薄膜微结构的影响.     

脉冲激光沉积制备的Co80Cr20/Ti90Cr10薄膜的结构与磁性

用脉冲激光沉积(PLD)的方法在硅单晶基片上制备了Ti₉₀Cr₁₀和Co₈₀Cr₂₀/Ti₉₀Cr₁₀薄膜，用XRD研究了Ti₉₀Cr₁₀薄膜的晶体结构与制备温度的关系，结果表明随着温度升高，薄膜从非晶态逐步向晶态转化，并且计算了Ti₉₀Cr₁₀薄膜的晶粒大小以及晶格常数. 利用透射电镜对Ti₉₀Cr₁₀薄膜进行了表面和截面形貌的表征. 采用纳米压痕仪对Ti₉₀Cr₁₀薄膜的硬度和膜基界面结合力进行了分析，表明薄膜的硬度和膜基结合力随制备条件改变有所变化，制备温度增加，薄膜的硬度和膜基结合力随之增加. 利用Ti₉₀Cr₁₀薄膜作为中间层，用PLD制备了Co₈₀Cr₂₀磁性层，获得了很好的垂直磁化性质，膜厚减小，矫顽力和矩形比有所增加，600℃真空条件下制备的Co₈₀Cr₂₀(8 nm)/Ti₉₀Cr₁₀(14 nm)薄膜的矫顽力为65.25 kA/m，矩形比为0.86，并且讨论了Co₈₀Cr₂₀/Ti₉₀Cr₁₀薄膜的磁化性质.     

Zn掺杂β-Ga2O3薄膜的制备和特性研究

β-Ga₂O₃是一种宽带隙半导体材料,能带宽度E_g≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga₂O₃薄膜为多晶结构,与本征β-Ga₂O₃薄膜相比,Zn掺杂β-Ga₂O₃薄膜的β-Ga₂O₃(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga₂O₃薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga₂O₃薄膜中的Zn原子被激活充当受主。     

离子注入掺杂锐钛矿TiO2薄膜的光学性能

 在玻璃基体上,采用射频磁控溅射方法在不同的基体温度下制备了TiO₂薄膜,然后在薄膜中注入注量分别为5×1016, 1×1017和5×1017/cm2的N离子以制备N掺杂的TiO₂薄膜。X射线衍射结果表明：制备出的TiO₂薄膜为锐钛矿型。X射线光电子能谱研究结果表明：注入的N离子与TiO₂晶粒相互作用,形成了含氮的TiO_xN_2-x化合物,从而改变了TiO₂薄膜的吸收边;随N离子注量增加,吸收边移动更明显;同时,由于氮离子注入产生的辐照缺陷使TiO₂薄膜在紫外和可见光区的吸收也明显增强。     

ZrO2/SiO2溶胶-凝胶薄膜膜层间的渗透行为

 分别以丙醇锆和正硅酸乙酯为原料，采用溶胶-凝胶工艺制备了性能稳定的ZrO₂和SiO₂溶胶。用旋转镀膜法在K9玻璃上分别制备了单层SiO₂薄膜、单层ZrO₂薄膜、ZrO₂/ SiO₂双层膜和SiO₂/ZrO₂双层膜。采用原子力显微镜观察了薄膜的表面形貌，用椭偏仪测量薄膜的厚度与折射率，用紫外-可见光分光光度计测量了薄膜的透射率。对薄膜的透射光谱和椭偏仪模拟的数据进行分析，发现SiO₂/ZrO₂双层膜之间的渗透十分明显，而ZrO₂/SiO₂双层膜之间几乎不发生渗透。利用TFCalc模系设计软件,采用三层膜模型对薄膜的透射率进行模拟，得出的透射曲线与用紫外-可见光分光光度计测量的透射曲线十分符合。     

分子束外延生长[111]晶向CdTe的研究

本文采用分子束外延(MBE)方法在BaF₂衬底上直接外延生长了CdTe(111)薄膜. 反射高能电子衍射(RHEED)实时监控生长表面, 衍射图样揭示了CdTe(111)在BaF₂表面由二维生长向三维生长的变化过程．XRD表征验证了外延生长的CdTe薄膜的单晶性质．由红外透射光谱测量和理论拟合相结合, 得到了CdTe外延薄膜室温带隙宽度E_g=1.511 eV.     

YBa2Cu3O7-δ/LaAlO3和Tl2Ba2CaCu2O8/LaAlO3高温超导薄膜内的应变对其微波表面电阻影响的研究

YBa₂Cu₃O_7-δ/LaAlO₃ (YBCO/LAO) 超导薄膜是通过热蒸发沉积方法制备的，实验中使用的Tl₂Ba₂CaCu₂O₈/LaAlO₃ (TBCCO/LAO) 超导薄膜是通过直流磁控溅射方法制备的.通过分析两片超导薄膜的XRD谱计算出了两片超导薄膜内的应变，ΔC相似文献   

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

The dependence of the structural and optical properties on the Te mole fraction in ZnS1−xTex/GaAs heterostructures

Lattice-mismatched ZnS_1−xTe_x epilayers with various Te mole fractions on GaAs (100) substrates were grown by double well temperature gradient vapor deposition. X-ray diffraction patterns showed that the grown ZnS_1−xTe_x layers were epitaxial films. The photoluminescence spectra showed that the peak position of the acceptor-bound exciton (A⁰, X) varied dramatically with changing the Te mole fraction and that the behavior of the (A⁰, X) peak position of the ZnS_1−xTe_x epilayers with a small amount of the Te mole fraction was attributed to a bowing effect. The reflectivity and ellipsometry spectra showed that the absorption energy peak was significantly affected due to the Stoke's effect. These results provide important information on the structural and optical properties of ZnS_1−xTe_x/GaAs heterostructures for improving optoelectronic device efficiencies operating in the spectral range between near ultraviolet and visible regions.     

Crystal structures of two variants for CuPtB-type ordering in strained CdxZn1−xTe epilayers

Two variants of CuPt_B-type orderings in strained Cd_xZn_1−xTe epilayers were investigated by using transmission electron microscopy (TEM) and selected area diffraction pattern (SADP) measurements. The TEM images on the Cd_0.15Zn_0.85Te epilayers depicted strong contrast modulations along the [110] direction, and the SADP images showed superstructure reflection spots corresponding to a CuPt_B-type ordering. Possible crystal structures for the two variants of CuPt_B-type ordering in the Cd_xZn_1−xTe epilayers, which were determined from the SADP images, are presented.     

分子束外延生长的n型Al掺杂ZnS1-xTex深中心研究

应用电容-电压、光致荧光和深能级瞬态谱技术研究了分子束外延生长的n型Al掺杂ZnS_1-xTe_x外延层深中心.Al掺杂ZnS_0.977Te_0.023的光致荧光强度明显低于不掺杂的ZnS_0.977Te_0.023，这表明一部分Al原子形成非辐射深中心.Al掺杂ZnS_1-xTe_x(x=0，0.017，0.04和0.046)的深能级瞬态傅里叶 关键词：     

A general optical characterization method for determining the composition of Hg1−xCdxTe samples

The rate of variation of transmission as a function of frequency or energy exhibits a maximum in the fundamental absorption region of the alloy semiconductor Hg_1−xCd_xTe. The maximum steepness occurs in the tail region of the absorption edge and its frequency can be correlated analytically with the composition. From the experimental measurements of room temperature IR transmission on both bulk grown and epilayers of Hg_1−xCd_xTe, it is shown that an analysis of the transmission curve at (dT_r/dE)_max leads to the determination of composition and compositional uniformity in the given sample.     

不同邻晶面Hg1-xCdxTe外延薄膜的特性分析

在取向不同的CdTe衬底上用液相外延技术生长了Hg_1-xCd_xTe薄膜，结合金相显微镜、红外显微镜、X射线双晶衍射、红外吸收及Raman光谱等手段分析了不同邻晶面外延层的性质，结果表明，在“近平面”（衬底偏角δ＜0.1°）或“无台阶面”（δ≈1.2°）上生长的外延层的晶格质量及光学性能较好 关键词：     

Cd1-xZnxTe晶体退火条件的选择及Zn压对退火晶体质量的影响

采用传统Bridgman方法和加入accelerated crucible rotation technique的Bridgman(缩写为ACRT-B)方法生长的Cd_1-xZn_xTe(x=0.04)晶体中存在有点缺陷、位错、杂质和Te沉淀等缺陷.为了减少甚至消除这些缺陷,必须将生长后的CdZnTe晶片在Cd气氛下退火.从Cd-Te和Cd_0.96Zn_0.04Te的PT相图出发,详细讨论了CdZnTe晶体的气固平衡条件,并 关键词： 1-xZn_xTe')" href="#">Cd_1-xZn_xTe 退火 气-固平衡     

Hg1-xCdxTe禁带以上的本征光吸收

讨论了HgCdTe三元半导体在能量大于禁带宽度范围内的本征吸收光谱。经过分析比较实验数据,Kane理论结果以及几种经验公式,指出Anderson从Kane模型获得的理论公式及褚君浩等从实验结果得出的经验公式,最符合HgCdTe禁带以上本征光吸收行为。文中还就外延薄膜样品的本征吸收进行了讨论。 关键词：     

Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase T_c (>300 K) by preventing MnO₂. After milling 1–3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO₂ and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO₂ is considered to originate from the increased p–d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.     

Identification of the tellurium donor at the residual level in GaAs

Lightly tellurium doped epilayers have been grown by the AsCl₃GaH₂ technique. The position of the residual donors and of the Te donor have been determined by the high resolution photoluminescence technique and the position of the Te donor is found to be coincident with that of the a-donor reported by Cooke et al. within experimental uncertainty.