Diffusion of Ta in α-Ti

The diffusion of Ta in the hcp (α) phase of high-purity Ti (99.99%) was studied at different temperatures from 911 K up to 1123 K. The Rutherford Backscattering Spectrometry (RBS) and Heavy Ion RBS (HIRBS) techniques were used to obtain the penetration profiles. The evolution of the diffusion coefficient, D, as a function of temperature follows prediction of the Arrhenius law. The activation energy of the diffusion process is (318±7)kJ/mol, similar to that corresponding to self-diffusion in α-Ti. On the other hand, the measured values of D are systematically lower than those corresponding to self-diffusion by a factor of approximately 5. This reduction could be explained by taking into account the mass difference between Ta and Ti. An increase of the diffusion coefficient was measured when the diffusion proceeds on a less pure Ti (99.9%) matrix. This increment is higher at lower temperatures. Received: 12 November 2001 / Accepted: 12 March 2002 / Published online: 5 July 2002 RID="*" ID="*" RID="*" ID="*" RID="**" ID="**"Corresponding author. Fax: +54-11/6772-7362, E-mail: dyment@cnea.gov.ar RID="*" ID="*"Members of the Carrera del Investigador Científico del Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina     

Lead diffusion in α-Zr

Pb diffusion in α-Zr matrix between 823 and 1123 K was measured using heavy ion Rutherford backscattering spectrometry (HIRBS) technique. A deviation from the Arrhenius law was observed, with two different regions. At low temperatures the activation energy Q is close to the expected value for a substitutional diffuser but the pre-exponential factor D₀ is higher than expected. Close to the phase transition temperature the opposite occurs, with a low Q value. This behavior is similar to the one observed for Hf and self-diffusion in α-Zr. Received: 29 September 1998 / Accepted: 29 January 1999 / Published online: 28 April 1999     

Phosphorous doped Ru film for advanced Cu diffusion barriers

Copper diffusion barrier properties of phosphorous doped Ru film are studied. Phosphorous out-diffusion to Ru from underneath phosphosilicate glass (PSG) layer results in P doped Ru film. The doped Ru film improves copper barrier properties and has excellent thermal stability. XRD graph indicates that there is no copper silicide and ruthenium silicide formations after annealing at 550 °C for 30 min in vacuum. This result is consistant with AES depth profiles which show no Cu, Ru, O and Si inter-diffusion. The phosphorous doped Ru barrier also blocks oxygen's diffusion to copper from the PSG layer. The phosphorous doped Ru film could be an alternative Cu diffusion barrier for advanced Cu interconnects.     

Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection

In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N₂) or oxidizing (O₂) ambient at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with respect to the N₂-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h), which depends on the C concentration. This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion is discussed. Received: 19 October 2001 / Accepted: 19 December 2001 / Published online: 20 March 2002 / Published online: 20 March 2002     

XPS surface analysis of monocrystalline silicon solar cells for manufacturing control

X-ray photoelectron spectroscopy (XPS) has been applied to surfaces of silicon wafers in the different stages of the assembly line for large-scale monocrystalline silicon solar cell manufacturing (ISOFOTON, Malaga, Spain). XPS results have shown that a considerable amount of carbon is present on the pyramidal-textured monocrystalline silicon surface. This amount decreases slightly but is still present after the process of phosphor diffusion (p-n junction), as well as after subsequent calcination in humid air for SiO₂ film formation (passivation). This amount of carbon may be buried during the process of CVD coating an anti-reflection TiO₂ film. After calcination of the film in order to obtain the TiO₂ rutile phase, an even higher amount of carbon is detected on the TiO₂ anti-reflection coating surface. This indicates that not all organics from the tetra-isopropile ortho-titanate (TPT) precursor were released from the film. Furthermore, in this case phosphor is found in excess on the SiO₂ wafer surface (dead layer) and also on the rutile TiO₂ surface, indicating that an extra phosphor diffusion from the bulk silicon through the TiO₂ film has taken place during calcination. These results demonstrate how thermal treatments applied in the solar cell manufacturing assembly line can influence and may change the intended compositional distribution. These treatments may also introduce defects that act as recombination centres for charge carriers in the solar cell device. Received: 13 September 2000 / Accepted: 10 January 2001 / Published online: 3 May 2001     

Grain boundary diffusion of Cu in TiN film by X-ray photoelectron spectroscopy

In this study, the grain boundary diffusion of Cu through a TiN layer with columnar structure was investigated by X-ray photoelectron spectroscopy (XPS). It was observed that Cu atoms diffuse from the Cu layer to the surface along the grain boundaries in the TiN layer at elevated temperature. In order to estimate the grain boundary diffusion constants, we used the surface accumulation method. The diffusivity of Cu through TiN layer with columnar structure from 400 °C to 650 °C is D_b≈6×10⁻¹¹exp(−0.29/(k_BT )) cm²/s. Received: 18 May 1999 / Accepted: 8 September 1999 / Published online: 23 February 2000     

Diffusion through a polycrystalline thin film

Analytical solutions to Fick’s second law of diffusion have been simultaneously derived without the restrictions of parabolic profiles along the x-axis in grain boundaries and expressed in a series for both grain interior and grain boundary diffusing through a polycrystalline thin film. The analysis takes segregation of diffusion species at grain boundaries into account. The analytic solutions lead to the concentration profiles in the grain interior and in the grain boundary, to the average-integrated amount of diffusion species at the exit surface, and to the time lag, which can be technologically used for depth profile studies and kinetic accumulation measurements.     

Study of range distribution parameters for bismuth-ion implantation in silver gallium diselenide

Range distributions for bismuth ions implanted in AgGaSe₂ in the energy range 80–300 keV were investigated by using 2.1-MeV He²⁺ Rutherford backscattering spectrometry (RBS). A convolution calculation method was used to extract the true distributions of bismuth from the measured RBS spectra. The range distribution parameters, R_p and ΔR_p, were obtained and compared with those obtained from Monte Carlo simulation. The experimental R_p values agree with the Monte Carlo simulation values very well, but the experimental ΔR_p values are systematically larger than those from the theoretical simulation. Received: 28 January 2002 / Accepted: 11 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-531/856-5167, E-mail: xdliu@sdu.edu.cn     

On the migration of defects and impurities in microelectromechanical systems subject to a large number of light pulses

The migration of defects in light-irradiated microelectromechanical systems (MEMS) is treated theoretically. The effects of temperature gradients on atomic demixing are considered. It is found that, when the migration energy of defects and impurities is less than about 0.5 eV, their migration has to be introduced in the modelling of ageing of MEMS. Received: 17 July 2000 / Accepted: 31 March 2000 / Published online: 27 June 2001     

Present and future developments of SPM systems as mass storage devices

2 . Besides a high data density, a high data rate is an important requirement for a mass storage device. To overcome the problem of the low relative velocity between tip and sample for all commercial scanning probe microscopy (SPM) devices, we have developed a high speed SCM prototype which has the potential to reach data rates of Mbit/s. Received: 27 March 1998     

Tomographic study of the three-dimensional distribution of a high-fluence implant in a polymer

6 Li⁺ ions were implanted into PMMA at high flux up to fluences of 1×10¹⁵ cm^-2 under angles of 0° to 70° towards the surface normal. The Li depth distributions were determined by means of neutron depth profiling, and compared with theoretical simulations. The three-dimensional Li distribution was reconstructed from the one-dimensional depth profiles by means of a tomographic technique. It turned out that the measured Li depth distributions can be described by a superposition of Gaussian and exponential functions. This points at considerable Li mobility during or after the ion implantation, with trapping in unsaturable traps in the ion-irradiated region which roughly follow the electronic energy transfer distribution. The Li redistribution is more pronounced along the track direction than transversely to it. The normalized Li distributions in various implantation directions were fed into our tomographic program to reconstruct the three-dimensional distribution of the deposited lithium. As expected, the lithium preferentially distributes along the ion tracks. This work is another hint that mobility of implanted ions in solids does not proceed isotropically, but is strongly influenced by the radiation-damage distributions. Received: 11 May 1998 / Accepted: 9 September 1998 / Published online: 24 February 1999     

AFM, a tool for single-molecule experiments

Received: 27 March 1998     

Oxygen deficiency dependence of magnetic and magnetoresistive properties for La0.5Sr0.5CoO3-x thin films prepared by pulsed laser deposition

The complete (001)-oriented thin films of La_0.5Sr_0.5CoO_3-x (LSCO) are deposited on (001) SrTiO₃ substrates by pulsed laser deposition under reduced oxygen pressure. It is revealed that the c axis of the film stretches with depleting oxygen. The magnetic, electrical, and magnetoresistive properties of the films are characterized by means of various techniques. Significant dependence of these properties on oxygen deficiency in the films is demonstrated, with enhanced magnetoresistance recorded for the samples deposited over a wide range of reduced oxygen pressure. Received: 9 July 1998 / Accepted: 15 January 1999 / Published online: 31 March 1999     

Fabrication of MgO nanobelts using a halide source and their structural characterization

MgO nanobelts have been fabricated by chemical vapor deposition using MgCl₃ as starting material. The products consist of a large quantity of belt-like nanostructures with typical lengths in the range of several tens to several hundreds of micrometers; some of them even have lengths on the order of a millimeter. The typical thickness and width-to-thickness ratio of the MgO nanobelts are in the range of 20 to 100 nm and about 5 to 10, respectively. The size and morphology of the MgO nanobelts were measured by transmission electron microscopy. Investigations of X-ray diffraction patterns and using high-resolution transmission electron microscopy indicate that the nanobelts have a cubic structure and are single-crystalline. Received: 23 August 2001 / Accepted: 27 August 2001 / Published online: 2 October 2001     

Sampling high-frequency signals using a poled-polymer asymmetric Fabry–Perot microcavity as an electro-optic probe tip

The sampling of high-frequency signals using poled electro-optic polymer films as electro-optic probe tips has been demonstrated for the first time. The electro-optic polymer, which was spin coated onto a high-reflectivity glass substrate, was corona poled; thus an asymmetric Fabry–Perot microcavity was formed, based on the difference between the polymer reflectivity and that of high-reflectivity glass. This converts phase modulation to amplitude modulation, so only one laser beam is needed in this system. The sampling technique has been analyzed by multiple reflection and index ellipsoid methods. A 1.2 GHz microwave signal propagating on a coplanar waveguide transmission line has been sampled, and a voltage sensitivity of about 0.5 mV/ was obtained. Received: 16 August 2001 / Revised version: 20 November 2001 / Published online: 14 March 2002     

Towards new lasers in Ti:Er:LiNbO3 waveguides: a study of the excited Er3+ states

Detailed excited state absorption measurements under pumping at 980 nm and 1.5 μm together with conventional absorption and emission spectroscopy is employed to investigate optical transitions of Er³⁺ in Ti:LiNbO₃ channel-waveguides. The experimental data were evaluated using the Judd–Ofelt method giving parameters close to those in the bulk. The good agreement between theoretical prediction and measurements allows us to calculate cross section, lifetimes, and branching ratios. Based on these results we developed and tested a model which is able to predict the conditions for which laser operation at 550 nm and 2.7 μm will be possible under 980 nm pumping. Received: 9 December 1998 / Revised version: 8 January 1999 / Published online: 24 March 1999     

Growth mechanisms for single-wall carbon nanotubes in a laser-ablation process

Mechanisms proposed in the literature are compared with a current scenario for the formation of single-wall carbon nanotubes in the laser-ablation process that is based on our spectral emission and laser-induced fluorescence measurements. It is suggested that the carbon which serves as feedstock for nanotube formation not only comes from the direct ablation of the target, but also from carbon particles suspended in the reaction zone. Fullerenes formed in the reaction zone may be photo-dissociated into C₂ and other low molecular weight species, and also may serve as feedstock for nanotube growth. Confinement of the nanotubes in the reaction zone within the laser beam allows the nanotubes to be ‘purified’ and annealed during the formation process by laser heating. Received: 2 November 2000 / Accepted: 3 November 2000 / Published online: 23 March 2001     

Inelastic X-ray scattering: new possibilities for Raman spectroscopy

Inelastic X-ray scattering with meV resolution has recently become available for studies of dynamical properties and elementary excitations in solids. Contrary to Raman spectroscopy at visible wavelengths, which in first order is limited to the Brillouin-zone center, the wave vectors in hard X-ray Raman scattering are very large, and the crystal-momentum transfer to elementary excitations, whose energies may range from a few meV up to several eV, can be tuned continuously across the whole Brillouin zone. This paper reviews new and unique possibilities offered by X-ray Raman spectroscopy for crystalline solids, such as phonon-dispersion measurements (GaN), the determination of phonon self-energies (isotopically mixed diamond), and resonance effects and studies of electronic excitations (copper oxides). Received: 19 October 2001 / Accepted: 12 December 2001 / Published online: 27 March 2002 / Published online: 27 March 2002 RID="*" ID="*"Present address: Agilent Technologies Deutschland GmbH, Herrenberger Str. 130, 71034 B?blingen, Germany     

Anomalous viscosity exponent in a discretized model for a chain diffusion in one dimension

We present a one-dimensional Monte Carlo simulation for the diffusion motion of a chain of N beads. We found that the scaling exponent for the viscosity can be smaller or greater than 3. This anomalous behavior cannot be attributed to the diffusivity scaling or the length fluctuations but is due to the chain dynamics details during diffusion in which the end beads play the key role. The viscosity exponent 3 and its expected relation with the diffusivity exponent are recovered in the asymptotic regime (N ↦∞). Received 24 September 2001 and Received in final form 28 January 2002