Etching temperature dependence of optical properties of the electrochemically etched n-GaAs

The GaAs granular films have been prepared by electrochemical anodic etching of n-GaAs in HCl electrolyte at different etching temperatures. The microstructure and optical properties of the films were investigated by micro-Raman spectrum, atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. Raman spectra reveal marked redshift and broadening, which could be explained by phonon confinement model. Results show the GaAs nanocrystalline films have formed during the anodic etching process under certain chemical conditions. Two “infrared” PL bands at ∼860 nm and ∼920 nm and a strongly enhanced visible PL band envelope around 550 nm were observed in the film prepared at etching temperature of 50 °C. The “green” PL band envelope is attributed to both quantum confinement in GaAs nanocrystals and PL of Ga₂O₃ and As₂O₃. The results reveal that the energy band structure of GaAs granular films is closely related to the etching temperatures. PACS 81.07.Bc; 78.30.Fs; 78.55.Cr     

Surface confinement of the InN-rich phase in thick InGaN on GaN

The surface confinement of InN-rich phase in thick In_0.15Ga_0.85N epitaxial films on GaN were observed by photoluminescence depth profiling employing an inductively coupled Cl₂ plasma etching technique. The photoluminescence measurements showed that InN-rich phases were present on the surface of the thick In_0.15Ga_0.85N films. After removing the surface layer of 50 nm, the PL peaks corresponding to the InN-rich phases completely disappeared, suggesting that the InN-rich phase region is confined to a depth of 50 nm.     

Morphology and optical properties of p-type porous GaAs(1 0 0) layers made by electrochemical etching

Porous GaAs layers were formed by electrochemical etching of p-type GaAs(1 0 0) substrates in HF solution. A surface characterization has been performed on p-type GaAs samples using X-ray photoelectron spectroscopy (XPS) technique in order to get information about the chemical composition, particularly on the surface contamination. According to the XPS spectra, the oxide layer on as-received porous GaAs substrates contains As₂O₃, As₂O₅ and Ga₂O₃. Large amount of oxygen is present at the surface before the surface cleaning.Compared to untreated GaAs surface, room temperature photoluminescence (PL) investigations of the porous layers reveal the presence of two PL bands: a PL peak at ∼871 nm and a “visible” PL peak at ∼650-680 nm. Both peak wavelengths and intensities varied from sample to sample depending on the treatment that the samples have undergone. The short PL wavelength at 650-680 nm of the porous layers is attributed to quantum confinement effects in GaAs nano-crystallites. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-sized crystallites were observed on the porous GaAs surface. An estimation of the mean size of the GaAs nano-crystals obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results.     

Low cost fabrication of SiO2 optical waveguides by laser direct writing on Ti-doped Sol-Gel films

A commercial direct laser writing (DLW) system operating at 1070 nm was used to fabricate SiO₂ optical waveguides on silicon wafers. A Ti-doped SiO₂ Sol-Gel film was deposited on the SiO₂/Si substrate by the dip-coating technique, based on which SiO₂ optical waveguides were patterned by DLW using a Ytterbium fiber laser and followed by chemical etching. The effects of laser parameters and the preheated temperature of Sol-Gel films on the dimensions of optical waveguides were studied systematically. The differences of etching rate between laser irradiated and non-irradiated areas in Sol-Gel films preheated at various temperatures are characterized by measuring the thickness of the films. Results demonstrate that the available laser power density range for laser densification and the width of the patterned optical waveguides are influenced strongly by the preheated temperature of the Sol-Gel films. The width of the optimized optical waveguide in this work is 25 μm. The minimum propagation loss of the fabricated optical waveguides is 1.7 dB cm⁻¹ at the wavelength of 1550 nm.     

A Semiconductor Waveguide-Type Optical Frequency Shifter

A waveguide-type optical frequency shifter based on a rotating half-wave plate is proposed. The underlying principle can be used to realize a bit-rate-free and modulation-code-free optical frequency shifter. The waveguide was formed along the ≪1 1 1> direction on a GaAs (1 1 0) substrate by molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE). A 10-MHz optical frequency shift with 16 V_p-p applied voltage and 22.5% shift efficiency is demonstrated.     

Photoluminescence and secondary ion mass spectroscopy characterization of GaAs-AlGaAs quantum wells grown on GaAs (1 0 0) substrates with different surface treatments

GaAs (1 0 0) substrates prepared in a quartz chamber under a H₂/As₄ flux, and then exposed to air were used for the subsequent growth of GaAs-AlGaAs single quantum wells by molecular beam epitaxy. The substrates prepared by this method showed atomically flat surfaces corroborated by atomic force microscopy analysis. Quantum wells grown directly on these substrates without a GaAs buffer layer exhibited narrow and intense photoluminescence peaks, an indication of a high quality material. The secondary ion mass spectroscopy analysis showed oxygen and carbon traces on the first AlGaAs barrier layer grown after air exposure with no effects on the quantum wells optical emissions. From the results we conclude that the prepared GaAs surfaces are useful for the epitaxial growth of high quality quantum structures.     

Nonselective vertical etching of GaAs and AlGaAs/GaAs in high pressure capacitively coupled BCl3/N2 plasmas

We studied nonselective, vertical dry etching of GaAs and AlGaAs/GaAs structure in high pressure capacitively coupled BCl₃/N₂ plasmas. The operating pressure was fixed at 150 m Torr. We found that there was an optimized process condition for nonselective and vertical etching of GaAs and AlGaAs/GaAs at the relatively high pressure. It was noted that there was a range of % N₂ (i.e. 20–40%) where nonselective etching of GaAs over AlGaAs could be achieved in the BCl₃/N₂ mixed plasma. We also found that dry etching of GaAs and AlGaAs/GaAs structure provided quite vertical and smooth surface when % N₂ was in the range of 0–20% in the BCl₃/N₂ plasma. The maximum etch rates for GaAs (0.41 μm/min) and AlGaAs/GaAs structure (0.42 μm/min) were obtained with 20–30% N₂ composition in the plasma.     

Investigation of all-optical analog-to-digital quantization using a chalcogenide waveguide: A step towards on-chip analog-to-digital conversion

We have investigated all-optical analog-to-digital quantization by broadening the pulse spectrum in a chalcogenide (As₂S₃) waveguide and subsequently slicing the measured spectrum using an array of filters. Pulse spectral broadening was measured for 8 different power levels in a 6 cm long As₂S₃ waveguide and used to analyze an 8-level all-optical quantization scheme employing filters with full-width at half-maximum (FWHM) bandwidth of 2 nm. A supercontinuum spectrum with −15 dB spectral width up to 324 nm was observed experimentally at large powers. This large spectral broadening, combined with filtering using a 128 channel arrayed waveguide grating (AWG) with 2 nm filter spacing, has the potential for all-optical quantization with 7-bit resolution. In order to encode the quantized signal we propose an encoder scheme which can be implemented using optical Exclusive-OR gates. Demonstrating all-optical quantization using a planar waveguide is an important step towards realizing all-optical A/D conversion on a chip.     

Analysis of dispersions of coupled asymmetric subwavelength-diameter wires

We propose a novel waveguide based on a structure of coupled asymmetric subwavelength-diameter wires to realize a high negative dispersion. The waveguide consists of an optical nanofiber and a GaAs nanowire. The properties of the supermodes are calculated using finite elements method. The results show that the symmetric supermode in the coupled structure can exhibit a giant negative dispersion up to −4.5 × 10⁶ ps/nm/km.     

Nanostructuring-induced modification of optical properties of p-GaAs (1 0 0)

A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (1 0 0) surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is characterized by atomic force microscopy (AFM), room temperature photoluminescence (PL), Raman spectroscopy and optical reflectance measurements. AFM imaging reveals that the porous GaAs layer is consisted of a pillar-like of few nm in width distributed between more-reduced size nanostructures. In addition to the “infrared” PL band of un-etched GaAs, a strong “green” PL band is observed in the etched sample. The broad visible PL band of a high-energy (3.82 eV) excitation is found to compose of two PL band attributed to excitons confinement in two different sizes distribution of GaAs nanocrystals. The quantum confinement effects in GaAs nanocrystallites is also evidenced from Raman spectroscopy through the pronounced appearance of the transverse optical (TO) phonon line in the spectra of the porous sample. Porosity-induced a significant reduction of the specular reflection, in the spectral range (400–800 nm), is also demonstrated.     

Issues in ZnO homoepitaxy

Zinc oxide (ZnO) bulk single crystals, which are of high purity and transparency with a large size of 2 in., are successfully grown by the hydrothermal method. The sliced substrates are chemomechanically polished to form an epi-ready surface. The impurities existing on the as-polished substrate surface are characterized before and after annealing by SIMS (secondary-ion mass spectroscopy), and a damaged surface layer due to chemomechanical polishing is evaluated by an optical method. We attempt to remove the layer damaged due to chemomechanical polishing with two approaches, chemical etching and thermal annealing in N₂, O₂ or high vacuum. The improvement of the surface morphology and crystallinity is evaluated by means of high resolution X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM). In the PL measurements, the relative intensity of the first-order longitudinal optical phonon replica of the free exciton (FX-1LO) is compared against varying etching depth. The relative intensity becomes weak with increasing etch depth and finally saturates at the etch depth of 5 μm. After the annealing process, we grow ZnO thin films on these ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. Films grown directly on the substrate show a 3D growth mode in the initial stage of growth with various surface treatments. To overcome this problem, we employ a low temperature grown ZnO buffer layer (LT-ZnO), and a two-dimensionally grown high quality ZnO film is attained.     

Laser projection-patterned etching of (100) GaAs by gaseous HCl and CH3Cl

Laser projection-patterned etching of GaAs in a HCl and CH₃Cl atmosphere performed using a pulsed KrF-excimer laser (=248 nm, =15 ns) and deep-UV projection optics (resolution 2 m) is reported. The etching process carried out in a vacuum system having a base pressure of 10^–6 mbar is shown to result from a purely thermochemical reaction. Etching takes place in two steps: (i) between the laser pulses, the etchant gas reacts with the GaAs surface-atomic layer to form chlorination products (mainly As and Ga monochlorides), (ii) local laser surface heating results in the desorption of these products allowing further reaction of the gas with the surface. The influence of the etching parameters (laser energy density, gas pressure and pulse repetition rate) on the etch rate and the morphology of the etched features was studied. Etch rates up to 0.15 nm per pulse, corresponding to the removal of 0.5 GaAs molecular layer, are achieved. The spatial resolution of the etching process is shown to be controlled by the heat spread in the semiconductor and by the nonlinear dependence of the etch rate on the surface temperature. As a result, etched features smaller or larger than the projected features of the photomask are achieved depending on the laser energy density. Etched lines having a width of 1.3 m were obtained at low fluences by the projection of 2 m wide lines onto the GaAs surface.     

Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillars

Individual pillars were etched from a sample embedding a single plane of GaN/AlN quantum dots, deposited by molecular beam epitaxy on a sapphire substrate. Pillars with diameters ranging from 0.1 to 5 μm were fabricated by electron-beam lithography and SiCl₄ reactive ion etching. The PL from a single pillar could be measured by using a confocal microscope, with a spatial resolution of 600 nm. We report an intense PL signal from pillar diameters as small as 0.1 μm at room temperature. By increasing the power of the excitation laser from 0.05 to 200 μW, we induced a blue-shift of the PL energy peak from 2.38 to 2.86 eV, accompanied by a substantial broadening of the PL line. This is explained by the photo-induced screening of the internal electric field, which is close to 10 MV/cm in GaN/AlN heterostructures. Finally we report and tentatively explain a photodarkening effect, i.e., the progressive decrease of the PL intensity over two orders of magnitude, after one hour of continuous laser excitation. However, this effect does not seem to be correlated to the etching process.     

Interferometric optical isolator with Si guiding layer fabricated by wafer bonding

An interferometric optical isolator, with a Si guiding layer, employing a nonreciprocal phase shift was studied. The optical isolator was comprised of a magneto-optic waveguide with a magnetic garnet/Si/SiO₂ structure, which was fabricated by wafer bonding technique. The nonreciprocal phase shift in the magneto-optic waveguide with the Si guiding layer was calculated at a wavelength of 1.55 μm. Several kinds of layer structures in the magneto-optic waveguide were discussed.     

Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K₂S₂O₈ solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K₂S₂O₈ solution has been proposed.     

Surface plasmon enhanced ultra-low threshold second harmonic generation in periodically poled whispering gallery resonator

The surface plasmon enhanced ultra-low threshold second harmonic generation is observed, designed and simulated in whispering gallery resonator made of MgO doped periodically poled LiNbO₃. Here the electric field associated with incident optical radiation of picowatt level is amplified to milliwatt level through surface plasmon resonance in Kretschmann geometry which is formed by a BK₇ prism plane, 29 nm thin gold layer and 20 nm thin GaAs layer. This enhanced electric field then coupled to a whispering gallery resonator, which facilitated the generation of second harmonic for an incident laser radiation of picowatt level. In this proposed configuration with an incident optical power of 94.6 pW, generated second harmonic through whispering gallery resonator is found to be 14.6 mW.     

The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×10¹⁰ cm⁻² was observed by atomic force microscopy before the capping process. The influences of GaAs, In_0.53Ga_0.47As, and InP capping layers (5–10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.     

Properties of a Thin-Film Optical Waveguide Using Fluorinated Silicon Oxide and Organic Spin-on-Glass Films

A thin-film optical waveguide using a fluorinated silicon oxide (SiOF) as a core layer was investigated. An organic spin-on-glass (SOG) film was used for a cladding layer. The SiOF films were formed at 23°C by a liquid-phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (H₂SiF₆) aqueous solution. A thin-film optical waveguide structure for single mode was designed and fabricated, based on the dispersion properties of refractive indices for the LPD-SiOF and organic SOG films. The refractive indices at a wavelength of 632.8 nm were 1.430 and around 1.400 for the LPD-SiOF and organic SOG films, respectively. The thickness of LPD-SiOF films deposited was 1.18 μm. Thicknesses of cladding organic SOG films cured at 300 and 400°C were 1.28 and 1.31μm, respectively. The effective refractive indices for single mode were 1.4169 and 1.4158 at a wavelength of 632.8 nm for the cladding organic SOG films cured at 300 and 400°C, respectively, and differences between the measured and calculated incident angles were 0.84° and 1.29° for the cladding organic SOG films cured at these respective temperatures. A streak of guided-light was observed for the LPD-SiOF/SOG structure optical waveguide. The transmission loss was 7.6-7.9 dB/cm.     

Far-infrared dielectric functions and phonon spectra of alloys determined by spectroscopic ellipsometry

We have used spectroscopic ellipsometry to determine the complex dielectric function of a series of ternary Be_xZn_1−xTe thin films grown by molecular beam epitaxy. The II–VI semiconductor alloys were grown on InP substrates that had an InGaAs buffer layer. After the growth, X-ray diffraction experiments were performed in order to determine the alloy concentration. A standard inversion technique was used to obtain the dielectric functions from the measured ellipsometric spectra, obtained between 2000 nm (5000 cm⁻¹) and 40,000 nm (250 cm⁻¹). By modelling the dielectric function as a collection of oscillators, representing longitudinal and transverse optical phonons of the Be_xZn_1−xTe lattice, we were able to recover the phonon spectra for this alloy system. It is argued that the additional phonon modes that are obtained from ellipsometry are best understood from the recently-proposed percolation model.     

A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3μm surface emitting laser diodes

A distributed Bragg reflector (DBR) utilizing the digital alloy Al_0.9Ga_0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al_0.9Ga_0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al_0.9Ga_0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer.