Nonlocal behaviors of spin correlations in the Haldane-Shastry model

The nonlocal factors of spin correlations are introduced for lattice spin models. Based on this concept, we investigate the nonlocal behavior of the Haldane-Shastry model with or without ring frustration. The ground state and spin correlations of the Haldane-Shastry model are calculated for both even and odd number of spins, then the nonlocal factors can be deduced analytically. It is found that the nonlocal factor due the ring frustration is the same as the Heisenberg model.     

Current-driven destabilization of both collinear configurations in asymmetric spin valves

Spin-transfer torque in spin valves usually destabilizes one of the collinear configurations (either parallel or antiparallel) and stabilizes the second one. Apart from this, balance of the spin-transfer and damping torques can lead to steady precessional modes. In this Letter we show that in some asymmetric nanopillars, spin current can destabilize both parallel and antiparallel configurations. As a result, stationary precessional modes can occur at zero magnetic field. The corresponding phase diagram as well as frequencies of the precessional modes have been calculated in the framework of macrospin model. The relevant spin-transfer torque has been calculated in terms of the macroscopic model based on spin diffusion equations.     

Nonlocally correlated trajectories in two-particle quantum mechanics

In this paper we present a series of computer calculations carried out in order to demonstrate exactly how the de Broglie-Bohm interpretation works for two-particle quantum mechanics. In particular, we show how the de Broglie-Bohm interpretation can account for the essential features of nonrelativistic, two-particle quantum mechanics in terms of well-defined, correlated, individual particle trajectories and spin vectors. We demonstrate exactly how both quantum statistics and the correlations observed in Einstein-Podolsky-Rosen experiments can be explained in terms of nonlocal quantum potentials and nonlocal quantum torques which act on the well-defined individual particle coordinates and spin vectors.     

Experimental falsification of Leggett's nonlocal variable model

Bell's theorem guarantees that no model based on local variables can reproduce quantum correlations. Also, some models based on nonlocal variables, if subject to apparently "reasonable" constraints, may fail to reproduce quantum physics. In this Letter, we introduce a family of inequalities, which use a finite number of measurement settings, and which therefore allow testing Leggett's nonlocal model versus quantum physics. Our experimental data falsify Leggett's model and are in agreement with quantum predictions.     

Surface models with nonlocal potentials: Upper bounds

The behavior of fluctuations in a class of surface models with exponentially decaying nonlocal potentials in studied. Combining a Mayer expansion with a duality transformation, we demonstrate the equivalence of these models to a class of two dimensional spin systems with nonlocal interactions. The expansions give sufficient control over the potentials to allow the fluctuations to be bounded from above by the means of complex translations in the spin representation of the model.The author was an NSF Predoctoral Fellow when this research was begun     

Effect of Rashba interaction at normal metal/insulator interface on spin-orbit torque of ferromagnet/normal metal/insulator trilayers

Based on a spin drift-diffusion model, we theoretically investigate the spin-orbit torque in ferromagnet/normal metal/insulator trilayers with considering the Rashba interfacial spin-orbit coupling at the normal metal/insulator interface. We find that the spin-orbit torque shows the opposite normal-metal-thickness dependences for the bulk spin-orbit coupling effect in the normal metal layer and for the interfacial spin-orbit coupling effect at the normal metal/insulator interface, offering a way to disentangle these two spin-orbit coupling effects. Moreover, we show that the conventional interpretation based on the bulk spin-orbit coupling effect overestimates the spin Hall angle and underestimates the spin diffusion length of the normal metal layer, when the interfacial contribution is non-negligible. Our result, a concise analytic expression of the spin-orbit torque considering both bulk and interface spin-orbit coupling effects, will be useful to design and interpret experiments on spin-orbit torque experiments in ferromagnet/normal metal/insulator trilayers.     

多端口石墨烯系统中的非局域电阻

非局域测量方法由于其能够间接探测某些难以直接俘获的非平庸物理机理,近年来已逐渐成为凝聚态物理的研究热点之一.最近的实验在H形多端口石墨烯样品中发现了巨大的非局域电阻信号.在排除了经典欧姆、边缘态等可能的输运形式后,人们倾向于认为这类非局域电阻是由多端石墨烯系统中存在的自旋霍尔效益或谷霍尔效应所导致.借助于非平衡格林函数输运计算,目前的理论可以在同样的多端石墨烯体系中得到部分与实验符合较好的数值模拟结果.针对实验中发现的某些难以理解的、甚至与经典理论相矛盾的非局域电阻性质,例如非局域电阻相比局域电阻在偏离电中性点时的迅速衰减、出现在能隙中的非局域电阻峰值等,目前的理论研究取得了一定的进展,但对这些奇异现象的理解仍存在较大的争议.本综述详细回顾了多端口石墨烯体系中非局域电阻的相关实验,并针对性地介绍与之配套的理论进展及对未来研究的展望.     

Gate-controlled spin injection at LaAlO3/SrTiO3 interfaces

We report results of electrical spin injection at the high-mobility quasi-two-dimensional electron system (2-DES) that forms at the LaAlO3/SrTiO3 interface. In a nonlocal, three-terminal measurement geometry, we analyze the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or transverse magnetic fields (Hanle and inverted Hanle effect). The influence of bias and back-gate voltages reveals that the spin accumulation signal is amplified by resonant tunneling through localized states in the LaAlO3 strongly coupled to the 2-DES by tunneling transfer.     

From microelectronics to spintronics and magnonics

In this review, the recent developments in microelectronics, spintronics, and magnonics have been summarized and compared. Firstly, the history of the spintronics has been briefly reviewed. Moreover, the recent development of magnonics such as magnon-mediated current drag effect (MCDE), magnon valve effect (MVE), magnon junction effect (MJE), magnon blocking effect (MBE), magnon-mediated nonlocal spin Hall magnetoresistance (MNSMR), magnon-transfer torque (MTT) effect, and magnon resonant tunneling (MRT) effect, magnon skin effect (MSE), etc., existing in magnon junctions or magnon heterojunctions, have been summarized and their potential applications in memory and logic devices, etc., are prospected, from which we can see a promising future for spintronics and magnonics beyond micro-electronics.     

Domain wall motion by the magnonic spin Seebeck effect

The recently discovered spin Seebeck effect refers to a spin current induced by a temperature gradient in a ferromagnetic material. It combines spin degrees of freedom with caloric properties, opening the door for the invention of new, spin caloritronic devices. Using spin model simulations as well as an innovative, multiscale micromagnetic framework we show that magnonic spin currents caused by temperature gradients lead to spin transfer torque effects, which can drag a domain wall in a ferromagnetic nanostructure towards the hotter part of the wire. This effect opens new perspectives for the control and manipulation of domain structures.     

Interplay of Peltier and Seebeck effects in nanoscale nonlocal spin valves

We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second, and third harmonic voltage response nonlocally, the model is experimentally examined. The results indicate that the combination of Peltier and Seebeck effects contributes significantly to the nonlocal baseline resistance. Moreover, we found that the second and third harmonic response signals can be attributed to Joule heating and temperature dependencies of both the Seebeck coefficient and resistivity.     

Effect of resistance feedback on spin torque-induced switching of nanomagnets

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.     

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes.     

Nonlocal Andreev reflection with Rashba spin-orbital interaction in a triple-quantum-dot ring

We theoretically studied the nonlocal Andreev reflection with Rashba spin-orbital interaction in a triple-quantumdot(QD) ring,which is introduced as Rashba spin-orbital interaction to act locally on one component quantum dot.It is found that the electronic current and spin current are sensitive to the systematic parameters.The interdot spin-flip term does not play a leading role in causing electronic and spin currents.Otherwise the spin precessing term leads to shift of the peaks of the the spin-up and spin-down electronic currents in different directions and results in the spin current.Moreover,the spin-orbital interaction suppresses the nonlocal Andreev reflection,so we cannot obtain the pure spin current.     

Electrical control of the direction of spin accumulation

We are able to continuously change the direction of polarization of spin accumulation in a nonmagnetic metal by varying the currents injected by two ferromagnetic spin injectors. From measurements made at a distance from the injection area, we find a cosvarphi variation of the spin signal. This confirms that the angle of polarization of the nonlocal spin polarization with respect to the magnetization of the fixed spin detector is continuously varied as we change the injection currents. We give an explanation for the origin of this simple cosvarphi variation of the spin signal.     

Numerical investigation of spin-torque using the Heisenberg model

We present numerical calculations of the spin transfer torque resulting in current-induced domain wall motion. Rather than the conventional micromagnetic finite difference or finite element method, we use an atomistic/classical Heisenberg spin model approach, which is well suited to study geometrically confined domain walls. We compute the behaviour of domain walls in a one dimensional chain when currents are injected using adiabatic and non-adiabatic spin torque terms. Our results are compared to analytical calculations and are found to agree very well for small current densities. At larger current densities deviations are observed, which can be attributed to the approximations used in the analytical calculations.     

Spin transport and relaxation in graphene

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for the use of graphene for spin-based logic and information storage applications.     

Spin accumulation and spin relaxation in a large open quantum dot

We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection were achieved with quantum point contacts tuned to have spin-selective transport, with four contacts per dot for realizing a nonlocal spin-valve circuit. This provides an interesting system for studies of spintronic effects since the contacts to reservoirs can be controlled and characterized with high accuracy. We show how this can be used to extract in a single measurement the relaxation time for electron spins inside a ballistic dot (tau(sf) approximately equal to 300 ps) and the degree of spin polarization of the contacts (P approximately equal to 0.8).     

Local and nonlocal measurements of the Riemann tensor

Quantum mechanically described test particles enable a local measurement of the Riemann tensor via the interaction with the elementary particle spin. The corresponding procedure is discussed in detail. It is compared with three nonlocal methods, which are based on the behavior of classical macroscopic test particles. A central question thereby is if the complete set of components of the Riemann tensor can be determined.     

Spin-orbit torque from spin-flipping scattering at ferromagnetic metal/topological insulator interface

Recent experiments report large damping-like spin-orbit torque in a magnetic bilayer that consists of a topological insulator (TI) layer and a ferromagnetic metal (FM) layer. Here we examine the bilayer theoretically with particular attention to roles of conduction electrons in FM on the spin-orbit torque in this structure. We use electron scattering approach to address electron spin accumulation at the interface between TI/FM caused by the conduction electrons. While topological surface states are not well defined in this bilayer, we find that large damping-like spin-orbit torque can still arise through spin-flipping scattering of the conduction electrons at the TI-FM interface. The resulting damping-like spin-orbit torque is comparable in magnitude to that of the field-like spin-orbit torque. The ratio between the components of the spin-orbit torque relies on various details of the system. The result is compared with recent experimental results and other theoretical works.