Carbon nanotubes formed in graphite after mechanical grinding and thermal annealing

Multi-walled carbon nanotubes with cylindrical and bamboo-type structures are produced in a graphite sample after mechanical milling at ambient temperature and subsequent thermal annealing up to 1400 °C. The ball milling produces a precursor structure and the thermal annealing activates the nanotube growth. Different nanotubular structures indicate different formation mechanisms: multi-wall cylindrical carbon nanotubes are probably formed upon micropores and the bamboo tubes are produced because of the metal catalysts. A two-dimensional growth governed by surface diffusion is believed to be one important factor for the nanotube growth. A potential industrial production method is demonstrated with advantages of large production quantity and low cost. Received: 17 May 2002 / Accepted: 12 September 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +61-2/6125-8338, E-mail: ying.chen@anu.edu.au     

Strong blue photoluminescence from aligned silica nanofibers

Photoluminescence (PL) and infrared spectra of aligned silica nanofibers are investigated. Two striking strong blue luminescence emissions have been found at room temperature. This suggests that the silica nanofibers could be a candidate material for a blue-light emitter. The intensity of the PL emission decreases after annealing, which can be interpreted as the decrease of the oxygen deficiency resulting in the reduction of radiative recombination centers. Infrared spectra provide further evidence of this conclusion, where the enhancement of Si–O absorption is observed in annealed samples. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-10/8264-9531, E-mail: ldai@vip.sina.com     

Synthesis and morphology of boron nitride nanotubes and nanohorns

Boron nitride (BN) nanotubes have been synthesized by evaporating a mixture of boron and gallium oxide in the presence of ammonia gas. The synthesized BN nanotubes exhibit a well-crystallized concentric structure with diameters less than 30 nm, and no carbon contamination or defects could be observed, while the BN nanotubes with large diameters usually show a number of defects. Some BN nanohorn structures could also be observed in the product. The carbon-free growth of BN nanotubes was explained based on the vapor–liquid–solid growth mechanism, and the catalytic activity of liquid gallium for BN one-dimensional growth was also demonstrated. Received: 16 April 2002 / Accepted: 25 May 2002 / Published online: 19 July 2002     

Experimental observation and simulation of fractal patterns of Au/Ge bilayer films

In this paper, we report on the simulation of fractal clusters and the comparison with experimental fractal patterns. We found that multiple fractal clusters can be formed in Au/Ge bilayer films for different annealing times. The fractal crystallization area increases with the increase in the annealing time. The random successive nucleation model can simulate the actual growth processes of multiple growth sites. The simulating fractal clusters are in good agreement with our experimental fractal patterns. Received: 21 June 2001 / Accepted: 15 December 2001 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/3602-803, E-mail: chenzw@ustc.edu.cn     

Self-assembly of length-tunable gold nanoparticle chains in organic solvents

The one-dimensional coagulation of gold colloidal particles dispersed in organic solvent was investigated with transmission electron microscopy. The results indicate that the length of the nanoparticle chains can be modulated by changing the concentration of the solutions. It was also demonstrated that the wetting of the substrate surface hardly influenced the morphology of the nanoparticle chains, which revealed that the particle chains had been formed in the solution before deposition on the substrates. A general theoretical interpretation is provided to explain the linear coagulation of gold colloidal particles, on the basis of the asymmetrical distribution of the charges absorbed on the surface of the gold colloidal particles, as well as the action of the solvent molecules. Received: 8 April 2002 / Accepted: 1 July 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-025/361-9983, E-mail: jhliao@seu.edu.cn     

Dispersion and alignment of carbon nanotubes in polycarbonate

Dispersion and alignment of carbon nanotubes in thermoplastic polymers such as polycarbonate have been studied. Dispersion was accomplished by mixing in a conical twin-screw extruder and alignment was carried out using a fiber-spinning apparatus. The effects of mixing time and fiber draw rates on dispersion and alignment were investigated. Uniform dispersions were produced with relatively short residence times in the extruder. Excellent alignment of carbon nanotubes in nanocomposite filaments was obtained when the fiber draw rate was greater than 70 m/min. The ability to closely control the dispersion and alignment of carbon nanotubes in polymers is expected to lead to the development of nanocomposites with desirable electronic and structural properties. Received: 7 January 2002 / Accepted: 11 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-508/233-5521, E-mail: Michael.Sennett@natick.army.mil     

Extended defects in shallow implants

Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by which all these defects grow in size and transform during annealing. Defects grow by interchanging the Si atoms they are composed of and thus maintain large supersaturations of free Si interstitials in the region. A model has been developped to describe such an evolution in presence of a free surface. It is shown that after low energy implantation, the surface of the wafer may recombine large amounts of these free Si interstitials, driving defects into dissolution before transformation into more stable forms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +33-56/2257-999, E-mail: claverie@cemes.fr     

Ultrahigh-efficiency TEM<Subscript>00</Subscript> diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser

Ultrahigh-efficiency TEM₀₀ operation is demonstrated in a diode-pumped Nd:YVO₄ laser in a bounce amplifier geometry using a specially designed astigmatically optimised cavity configuration. Optical efficiency >68% is demonstrated and up to 27.1 W of output power for multimode operation. For single-mode TEM₀₀ operation, an output power of 23.1 W for 39.5 W of diode pumping was produced with beam propagation parameters of M_x ²=1.3 and M_y ²=1.1. Received: 10 October 2002 / Revised version: 9 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: a.minassian@ic.ac.uk     

Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) and electroluminescence of the In_0.53Ga_0.47As/In_0.53(Ga_0.6Al_0.4)_0.47As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO₂- (Si₃N₄-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 °C (800 °C) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 °C show a hugely improved lasing performance. Received: 2 September 2002 / Accepted: 3 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +82-62/970-2204, E-mail: ytlee@kjist.ac.kr     

Electro-responsive asymmetric nanopores in polyimide with stable ion-current signal

For the preparation of a single asymmetrically shaped nanopore in a polyimide membrane, Kapton foils were irradiated with single heavy ions and subsequently etched from one side in sodium hypochlorite (NaOCl). The other side of the membrane was protected from etching by a stopping medium containing a reducing agent for hypochlorite ions (OCl^-). The resulting conical nanopore rectified ion current and exhibited a stable ion-current flow. Received: 23 May 2002 / Accepted: 2 September 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Fax: +49-6159/712-179, E-mail: Z.Siwy@gsi.de     

Laser-induced etching and deposition of W using a-SiO<Subscript>2</Subscript> microspheres

A regular lattice of a-SiO₂ microspheres on a quartz support is used as a microlens array for laser-induced surface patterning by etching and deposition of W in atmospheres of WF₆ and WF₆+H₂, respectively. Received: 22 July 2002 / Accepted: 30 July 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +43-732/2468-9242, Email: dieter.baeuerle@jku.at     

Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers

Defects created in rapid thermally annealed n-GaAs epilayers capped with native oxide layers have been investigated using deep-level transient spectroscopy (DLTS). The native oxide layers were formed at room temperature using pulsed anodic oxidation. A hole trap H0, due to either interface states or injection of interstitials, is observed around the detection limit of DLTS in oxidized samples. Rapid thermal annealing introduces three additional minority-carrier traps H1 (E_V+0.44 eV), H2 (E_V+0.73 eV), and H3 (E_V+0.76 eV). These hole traps are introduced in conjunction with electron traps S1 (E_C-0.23 eV) and S2 (E_C-0.45 eV), which are observed in the same epilayers following disordering using SiO₂ capping layers. We also provide evidence that a hole trap whose DLTS peak overlaps with that of EL2 is present in the disordered n-GaAs layers. The mechanisms through which these hole traps are created are discussed. Capacitance–voltage measurements reveal that impurity-free disordering using native oxides of GaAs produced higher free-carrier compensation compared to SiO₂ capping layers. Received: 12 March 2002 / Accepted: 15 July 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +61-2/6125-0381, E-mail: pnk109@rsphysse.anu.edu.au     

Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy

The interfacial bonding and mixing between evaporated aluminum and a vapor deposited Teflon AF (abbreviated to AF) film have been investigated with X-ray photoelectron spectroscopy. Graphite carbon (C–C), and aluminum carbide (Al–C), oxide (Al–O–C) and fluoride (Al–F) are formed when aluminum atoms are deposited on to the AF film. With increasing deposition of aluminum, the concentrations of these newly formed components increase gradually. Moreover, in situ annealing results in remarkable increases in the C–C, Al–C, Al–O–C and Al–F configurations and a decrease in metallic aluminum. No significant diffusion of aluminum into the AF film was observed during the annealing. The Al compounds form a layer at the Al/AF interface that acts as an adhesion promoter and diffusion barrier. Received: 21 October 2002 / Accepted: 22 October 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Fax: +49-431/880-6229, E-mail: sjding@yahoo.com     

Processing of vacuum microelectronic devices by focused ion and electron beams

Localized physical and chemical reactions induced by focused ion and electron beams, i.e. dual beams, have been used to fabricate field emitters (FEs) and their arrays, field-emitter arrays (FEAs), without masking and annealing processes. Issues arising from beam processing such as beam-induced damage and contamination were eliminated to provide FEAs with low leakage current. Quick prototyping and repairing processes of FEs and FEAs using dual-beam processing have been demonstrated. Nb- or Au-gated Pt FEAs have been fabricated using dual beams. The fabricated FEAs showed a turn-on voltage of 40 V for field emission with a typical emission current of about 1 μA/tip. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +81-6/6850-6662, E-mail: takai@rcem.osaka-u.ac.jp     

Efficient tunable laser operation of diode- pumped Yb,Tm:KY(WO4)2 around 1.9 μm

A new laser medium – Yb,Tm:KY(WO₄)₂ – for diode pumped solid state laser applications operating around 1.9 to 2.0 μm has been investigated and the main laser characteristics are presented. Diode pumping at 981 nm and around 805 nm was realised. For 981-nm pumping, the excitation occurs into Yb³⁺ ions followed by an energy transfer to Tm³⁺ions. A slope efficiency of 19% was realised. For pumping around 805 nm, the excitation occurs directly into the Tm³⁺ ions. Here a maximum slope efficiency of 52%, an optical efficiency of 40%, and output powers of more than 1 W were realised. Using a birefringent quartz plate as an intracavity tuning element, the tunability of the Yb,Tm:KY(WO₄)₂ laser in the spectral range of 1.85–2.0 μm has been demonstrated. The possibility of laser operation in a microchip cavity configuration for this material has also been shown. Received: 12 March 2002 / Revised version: 20 May 2002 / Published online: 25 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-531/592-4116, E-mail: stefan.kueck@ptb.de     

Formation and structure of boron nitride conical nanotubes

Nanotubes exhibiting a novel structure - boron nitride (BN) conical nanotubes whose walls consist of conical layers with their cone axis parallel to the tube axis, as opposed to ordinary nanotubes, composed of concentric cylindrical layers with their normal perpendicular to the tube axis - were synthesized simultaneously with BN nanotubes by using carbon nanotubes (CNTs) as templates. The diameters of the BN conical nanotubes are typically about 15 nm, which is similar to those of the starting CNTs. Apex angles and inner diameters of most BN conical nanotubes are about 40° and 1 nm, respectively. The lengths of the BN conical nanotubes range from 50 nm to up to several micrometers.     

Deep drilling of metals by femtosecond laser pulses

Results of recent investigations on deep drilling of metals by femtosecond laser pulses are reported. At high laser fluences, well above the ablation threshold, femtosecond lasers can drill deep, high-quality holes in metals without any post-processing or special gas environment. It is shown that for high-quality drilling of metals, the following processes are important: (1) laser-induced optical breakdown of air containing metal vapor and small metal particles (debris) generated by multi-pulse femtosecond laser ablation, (2) transformation of laser pulses into light filaments, and (3) low-fluence finishing. Received: 15 November 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +49-511/2788-100, E-mail: ch@lzh.de     

Fabrication and observation of nanowire-assemblages of Si-Ge

A few of the interesting structures made by the assemblage of Si-Ge nanowires fabricated by the floating-zone melting-vapor method have been observed. They reveal shapes that are similar to coral, jellyfish and sea anemones. The pre-sintered substrate bar has some large crystalline particles (1–15 μm), which produce sites that are energetically predisposed to nucleation. The peculiar structures created by the assemblage of Si-Ge nanowires form on favored nucleation sites that consist of numerous bundles of nanowires with diameters of 20–50 nm. The periodic variation in the diameter of the bundles of nanowires is a common feature of these structures. In addition, a growth mechanism assisted by the coexistence of Ge and Si-Ge oxides is suggested. The growth process of these assemblages opens up new possibilities for the study of the growth mechanism of Si-Ge nanowires. Received: 25 July 2002 / Accepted: 9 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: 81-298/59-2736, E-mail: HU.Quanli@nims.go.jp     

Filling boron nitride nanotubes with metals

The authors’ endeavors over the last few years with respect to boron nitride (BN) nanotube metal filling are reviewed. Mo clusters of 1–2 nm in size and FeNi Invar alloy (Fe ∼60 at. %; Ni ∼40 at. %) or Co nanorods of 20–70 nm in diameter were embedded into BN nanotube channels via a newly developed two-stage process, in which multi-walled C nanotubes served as templates for the BN multi-walled nanotube synthesis. During cluster filling, low-surface-tension and melting-point Mo oxide first filled a C nanotube through the open tube ends, followed by fragmentation of this filling into discrete clusters via O₂ outflow and C→BN conversion within tubular shells at high temperature. During nanorod filling, C nanotubes containing FeNi or Co nanoparticles at the tube tips were first synthesized by plasma-assisted chemical vapor deposition on FeNi Invar alloy or Co substrates, respectively, and, then, the nanomaterial was heated to the melting points of the corresponding metals in a flow of B₂O₃ and N₂ gases. During this second stage, simultaneous filling of nanotubes with a FeNi or Co melt through capillarity and chemical modification of C tubular shells to form BN nanotubes occurred. The synthesized nanocomposites were analyzed by scanning and high-resolution transmission electron microscopy, electron diffraction, electron-energy-loss spectroscopy and energy-dispersive X-ray spectroscopy. The nanostructures are presumed to function as ‘nanocables’ having conducting metallic cores (FeNi, Co, Mo) and insulating nanotubular shields (BN) with the additional benefit of excellent environmental stability. Received: 10 October 2002 / Accepted: 25 October 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/51-6280, E-mail: golberg.dmitri@nims.go.jp     

Effect of exposure to air on sheet resistance and phase composition of Co silicides annealed at a low temperature of 470 °C

Attention has been attracted to Co silicides due to their superior properties in deep-submicron integrated circuit technology. In this paper, the effect of exposure to air on the properties of Co silicides has been studied. Co films of 20-nm thickness were deposited onto polysilicon layers using Ar sputtering. After deposition, the samples were exposed to air at room temperature for different times, ranging from 0 to 48 h, before a rapid thermal annealing (RTA) at 470 °C. It is found that exposure to air significantly changes the sheet resistance (R_s) and the phase composition of the silicides. The sample exposed to air for 48 h has R_sof∼71 Ω/sq, which is about 10% lower than that for the sample annealed immediately. This is due to the fact that more Co₂Si phase and less CoSi phase are formed in the former sample. The mechanism can be attributed to the gases in air (e.g. O₂), which contaminate the Co/Si interface and act as a kinetic barrier during the subsequent RTA. It has been demonstrated that gaseous contamination from air strongly influences the CoSi_x phase transformation. Received: 3 June 2002 / Accepted: 29 June 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. E-mail: qiang.huang@philips.com