Bulk modulus and its pressure derivatives of cuprous halides

The ab initio pseudopotential approach to the total crystal energy is presented using local DF formalism. The expressions for bulk modulus, its first and second pressure derivatives for group I-VII semiconductor binary compounds are derived. The expression for the second pressure derivative of the bulk modulus for four-fold crystal structures is derived for the first time within the pseudopotential framework. The computed results of the bulk modulus for cuprous halides are very close to the available experimental data.     

P-V relation for cuprous halides: Pseudopotential approach

Cuprous halides are found to show significantly different behaviour from that of alkali halides. This difference is mainly due to the presence of outermost d-electrons present in Cu⁺ ion. In the present paper, the ab initio pseudopotential formalism incorporating the effect of d-electrons is used to generate the equation of state (EOS) for group I-VII binary compounds from first-principles calculations. The expression for the EOS is derived for the first time within the pseudopotential framework. The computed isothermal compression curves for cuprous halides are compared with compression curves from other EOSs belonging to different classes and categories and have also been tested for the prediction of end point.     

Electronic topological transition and phase transition in rhodium and iridium based inter metallic compounds

Of the Rh₃Y, Rh₃La, Ir₃Y and Ir₃La inter-metallic compounds, the compound Rh₃Y exists in hexagonal structure, Ir₃Y and Ir₃La exist in rhombohedral structure, whereas the compound Rh₃La exists in both hexagonal and rhombohedral structures. Based on our tight binding-linear muffin tin orbital (TB-LMTO) study of other rhodium and iridium-based Rh₃X and Ir₃X (where X=Ti, Zr, Hf, V, Nb, Ta and Sc) inter-metallic compounds of AuCu₃ type cubic structure, an attempt is made to examine whether the compounds Rh₃Y, Rh₃La, Ir₃Y and Ir₃La will undergo a structural phase transition to cubic structure from their experimentally reported structures. From our study, it is observed that the compounds Rh₃Y and Rh₃La undergo a structural phase transition to cubic phase at 4.5 and 10.1 GPa, respectively, from their experimentally reported hexagonal and rhombohedral phases. Further it is predicted that both the compounds Ir₃Y and Ir₃La can exist in the cubic phase itself at ambient condition, in contrary to the experimental observation. From the band structure outputs that have been plotted for the compounds under compression, it is observed that the compounds Rh₃La, Ir₃Y and Ir₃La undergo the Lifshitz type of transition which may change the Fermi surface topology and hence the physical properties of these compounds.     

Structural, electronic and optical properties of AgI under pressure

We report results of first-principles total-energy calculations for structural properties of the group I-VII silver iodide (AgI) semiconductor compound under pressure for B1 (rocksalt), B2 (cesium chloride), B3 (zinc-blende) and B4 (wurtzite) structures. Calculations have been performed using all-electron full-potential linearized augmented plane wave plus local orbitals FP-LAPW + lo method based on density-functional theory (DFT) and using generalised gradient approximation (GGA) for the purpose of exchange correlation energy functional. In agreement with experimental and earlier ab initio calculations, we find that the B3 phase is slightly lower in energy than the B4 phase, and it transforms to B1 structure at 4.19 GPa. Moreover, we found AgI has direct gap in B3 structure with a band gap of 1.378 eV and indirect band gap in B1 phase with a bandgap around 0.710 eV. We also present results of the effective masses for the electrons in the conduction band (CB) and the holes in the valence band (VB). To complete the fundamental characteristics of this compound we have analyzed their linear optical properties such as the dynamic dielectric function and energy loss function for a wide range of 0-25 eV.     

First-principles study of the electronic and optical properties of rutile TiO2

The electronic, structural properties and optical properties of the rutile TiO₂ have been reported using the full potential linearized augmented plane wave (FP-LAPW) method as implemented in the WIEN2K code. We employed the generalized gradient approximation (GGA), which is based on exchange-correlation energy optimization to calculate the total energy. Also we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band structure calculations. Our results including lattice parameter, bulk modulus, density of states, the reflectivity spectra, the refractive index and band gap are compared with the experimental data. We present calculations of the frequency-dependent complex dielectric function ε(ω) and its zero-frequency limit ε₁(0).     

First-Principles Studies on Properties of Boron-Related Impurities in c-BN

We investigate, by first-principles calculations, the pressure dependence of formation enthalpies and defective geometry and bulk modulus of boron-related impurities （VB, Cs, NB, and OB） with different charged states in cubic boron nitride （c-BN） using a supercell approach. It is found that the nitrogen atoms surrounding the defect relax inward in the case of CB, while the nitrogen atoms relax outward in the other cases. These boron-related impurities become much more stable and have larger concentration with increasing pressure. The impurity CB^＋1 is found to have the lowest formation enthalpy, make the material exhibit semiconductor characters and have the bulk modulus higher than ideal c-BN and than those in the cases of other impurities. Our results suggest that the hardness of c-BN may be strengthened when a carbon atom substitutes at a B site.     

A theoretical study of Fe adsorption along Bi-nanolines on the H/Si(0 0 1) surface

We have investigated the energetic stability and equilibrium geometry of the adsorption of transition metal Fe atoms near the self-organized Bi lines on hydrogen passivated Si(0 0 1) surface. Our total energy results show that there is an attractive interaction between Fe adatoms along the Bi-nanolines. For the energetically most stable configuration, the Fe adatoms are seven-fold coordinated, occupying the subsurface interstitial sites aside the Bi-nanolines. With increased coverage, Fe atoms are predicted to form two parallel lines, symmetrically on both sides of the Bi line. Within our local spin-density functional calculations, we find that for the most stable geometries the Fe adatoms exhibit an antiferromagnetic coupling.     

Hybridized kinetic energy functional for orbital-free density functional method

We propose a hybridized kinetic energy functional, aTTF+bTvW, where TTF is the Thomas-Fermi functional and TvW the von Weizsäcker functional while a and b are adjustable parameters. The new functional is implemented in orbital-free plane-wave density functional method, in which a conjugate-gradient line-search scheme of electronic minimization is incorporated. Calculations with the fitted a and b show that this kinetic energy functional can describe the structures of small Si, Al and Si-Al alloy clusters with reasonable accuracy.     

First-principles supercell calculations for simulating a shallow donor state in Si

We present first-principles simulations of As-doped Si carried out using several cubic supercells of up to 10 648 atoms. The 1s As donor level in each supercell splits into three states, which have A₁, T₂, and E symmetries, respectively. The 1s(A₁) wavefunction is well converged in the largest cell, and its spread is close to those of the effective-mass theories. However, the calculated binding energies are smaller than experimental values. This discrepancy would be due to the self-interaction error within the approximated exchange-correlation density functional used in this calculation. Therefore, we also show perturbative calculations based on an impurity potential without the self-interaction error to estimate the binding energies of the 1s(A₁) donor state. The estimated binding energy in the largest supercell agrees well with the experimental value.     

First-principles prediction of half-metallic ferromagnetism in Cd(TM)O2 (TM=Cr, Mn, Fe, Co, Ni) compounds

We report the electronic structure of Cd(TM)O₂ (TM=Cr, Mn, Fe, Co, Ni) in the chalcopyrite structures. From this study we find that Cd(TM)O₂ is a half-metallic ferromagnetic compound. From the energy consideration we find that Cd(TM)O₂ is more stable in chalcopyrite structure rather than in rock salt structure. A careful analysis of the spin density reveals the ferromagnetic coupling between the p-d states and the cation dangling-bond p states, which is believed to be responsible for the stabilization of the ferromagnetic phase. The calculated heat of formation, bulk modulus and cohesive energy are reported.     

The dielectric constant of barium mono-chalcogenides and their improved band gap results

We have applied Engel-Vosko exchange energy within density functional theory, to calculate the electronic structure and the optical properties of BaX (X = Te, Se, and S) compounds via full potential linearized augmented plane wave method. We have found that this improves the band gap results comparing to our previous work in which we had made use of Perdew et al. exchange energy functional. We have also calculated the dielectric constant of these compounds, using both Perdew et al. and Engel-Vosko schemes. It is shown that Engel-Vosko exchange energy functional leads to a better result. We have also reported the effect of spin-orbit coupling on the results.     

First-principles studies of magnetic properties and electronic structure of EuC60

The full potential linearized augmented plane wave (FP-LAPW) method with the GGA+U approach was applied to study the electronic structures of the compound Eu₆C₆₀. Present calculations show that the hybridization between the Eu s, d state and the C₆₀ π states plays an essential role in its FM exchange interactions between the 4f electrons and metallic properties.     

Calculation of band offset in chalcopyrite system

A recently reformulated tight binding method is used to calculate valence band offset (VBO) at the CuInSe₂/CuGaSe₂ heterojunction. The hybrid energy is calculated in the s²p² configuration and a new model for the average hybrid energy is used. The theoretical VBO value of 0.05 eV is in good agreement with recent experimental value of 0.04 eV. The value of conduction band offset is 0.60 eV giving a type I alignment. The VBO varies linearly with bond length difference (l), as VBO=(0.24)l.     

Finite element method for solving Kohn-Sham equations based on self-adaptive tetrahedral mesh

A finite element (FE) method with self-adaptive mesh-refinement technique is developed for solving the density functional Kohn-Sham equations. The FE method adopts local piecewise polynomials basis functions, which produces sparsely structured matrices of Hamiltonian. The method is well suitable for parallel implementation without using Fourier transform. In addition, the self-adaptive mesh-refinement technique can control the computational accuracy and efficiency with optimal mesh density in different regions.     

Theoretical study of CuxAg1−xI alloys

We have performed first-principles calculations using full potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) to investigate the fundamental properties of Cu_xAg_1−xI alloys. We used both GGA96 [J.P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 77 (1996) 3865.] and EVGGA [E. Engel, S.H. Vosko, Phys. Rev. B. 47 (1993) 13164.] generalized gradient approximations of the exchange-correlation energy that are based on the optimization of total energy and corresponding potential. Quantities such as lattice constants, bulk modulus, band gap, density of occupied states and effective mass were calculated as a function of copper molar fraction x. These parameters were found to depend non-linearly on alloy composition x, except the lattice parameter, which follows Vegard's law. The microscopic origins of the gap bowing were explained using the approach of Zunger and co-workers; we have concluded that the band-gap energy bowing was mainly caused by the chemical charge-transfer effect and the volume deformation , while the structural relaxation contribute to the gap bowing parameter at smaller magnitude. The calculated phase diagram shows a broad miscibility gap for this alloy with a high critical temperature.     

Interface magnetic effects in vanadium overlayers on manganese substrate

The magnetic structure of V/Mn systems is investigated at T=0 K using real-space tight-binding approach. The magnetism is described in the Hartree-Fock approximation (HFA) of the Hubbard Hamiltonian and the density of states is calculated within the recursion technique. The semiempirical tight-binding (TB) method is used to investigate the magnetism of the systems, where the Hamiltonian is constructed using the Slater-Koster (SK) parameters. It is found that the hybridization of V with Mn d-bands and the neighboring effects play decisive roles in determining the magnetic structure of V-Mn systems. It is found that the magnetic moments of V and Mn in the (111) orientation are greater than those of (001) orientation for one and two V overlayers due to the local environment.     

First-principles calculations on TiO2 doped by N, Nd, and vacancy

First-principles density functional theory calculations have been carried out to investigate electronic structures of anatase TiO₂ with substitutional dopants of N, Nd, and vacancy, which replace O, Ti, and O, respectively. The calculation on N-doped TiO₂ with the local density approximation (LDA) demonstrates that N doping introduces some states located at the valence band maximum and thus makes the original band gap of TiO₂ smaller. Examining the effect of the strong correlation of Nd 4f electrons on the electronic structure of Nd-doped TiO₂, we have obtained the half-metallic ground state with the LDA and the insulating ground state with the LDA+U (Hubbard coefficient), respectively. In addition, the calculation on vacancy-doped TiO₂ with the LDA shows that a vacancy can induce some states in the band-gap region, which act as shallow donors.     

First-principles calculations of the electronic and optical properties of In6S7 compound

The electronic structure and the optical properties of In₆S₇ crystal are calculated by the first-principles full-potential linearized augmented plane wave method (FP-LAPW) using density functional theory (DFT) in its generalized gradient approximation (GGA). The calculated band structure shows that the In₆S₇ is a semiconductor with a direct band gap in good agreement with experimental studies. Furthermore, the dielectric tensor and the optical properties, such as absorption coefficient, refractive index, extinction coefficient, energy-loss spectrum and reflectivity, are derived and analyzed in the study.     

Structural and Thermodynamic Properties of Cerium via First-Principles Plane Wave Method with a Relativistic Analytic Pseudopotential

We investigate the structural and thermodynamic properties of cerium in α phase by using the first-principles plane wave method with a relativistic analytic pseudopotential of Hartwigsen, Goedcker and Hutter (HGH) scheme in the frame of local density approximation (LDA). The obtained lattice constant and bulk modulus are consistent with the available experimental data. Moreover, dependences of the normalized primitive volume V/V₀ on pressure and the thermodynamic quantities (including the Grüneisen constant γ and thermal expansion α) on temperature and pressure are obtained. The obtained linear thermal expansion parameter α (9.857× 10^-6K^-1 at 293.15K and 0GPa) is slightly larger than the experimental value (6.3×10^-6K^-1). All the results indicate that we provide an effective method to deal with the ground properties of the strongly interacting d- and/or f-electron systems.