射频溅射功率对Mn-Co-Ni-O薄膜结构与性能的影响

采用射频磁控溅射技术在硅衬底上制备了锰钴镍氧(Mn-Co-Ni-O, MCNO)薄膜并进行了后退火处理。利用X射线衍射、扫描电子显微镜、光学测试仪器等测试手段对晶体结构、表面形貌及光学性能进行表征。分析了不同射频溅射功率(60~100 W)对MCNO薄膜表面微观形貌、晶体结构和光学性能的影响。结果表明,在60~90 W下获得的薄膜表面致密且均匀,但在100 W下获得的MCNO薄膜表面晶粒尺寸显著增大。物相分析表明,采用射频磁控溅射沉积的MCNO薄膜主要为尖晶石结构,溅射功率对薄膜结晶质量和择优取向具有显著影响,在80 W下获得的MCNO薄膜结晶质量最佳。同时,拉曼光谱测试也表明该MCNO薄膜表现出最强的Mn⁴⁺—O对称弯曲振动和最小的压应力。紫外-可见-近红外光谱分析表明,MCNO薄膜的吸光范围主要在可见光-近红外波段,在80~90 W溅射功率下获得的MCNO薄膜在近红外波段表现出更强的吸收峰。射频溅射功率的改变会影响薄膜的厚度和结晶质量,从而对薄膜的光学带隙起到调控作用。光致发光光谱测试不同溅射功率下薄膜的缺陷峰发光强度,且在功率为80 W时沉积的薄膜具有最强紫外发射峰,表明改变溅射功率能够有效改善薄膜缺陷及提高晶体质量。     

射频溅射功率对ZnO透明导电薄膜光电性能的影响

采用磁控溅射技术在不同溅射功率下制备了ZnO薄膜.研究了薄膜的沉积速率、光电特性以及不同功率条件下制备的ZnO薄膜对HIT电池开路电压的影响.结果表明:在溅射功率为200 W时制备的薄膜,具有良好的导电性和光透过性;将其应用到HIT电池中,得到的开路电压最高.该研究对提高HIT电池性能具有一定的参考意义.     

衬底温度对氧化锌薄膜微结构及光学性能的影响

衬底温度是磁控溅射法制备氧化锌薄膜中一个非常重要的工艺指标,探索衬底温度对氧化锌薄膜微结构及光学性能的影响对制备环保型高质量氧化锌紫外屏蔽材料具有重要意义。以质量分数99.99%的氧化锌陶瓷靶为溅射源,利用射频磁控溅射技术在石英衬底上沉积了氧化锌紫外屏蔽薄膜,通过X射线衍射仪、薄膜测厚仪、紫外-可见分光光度计、荧光分光光度计进行测试和表征,研究了不同衬底温度对ZnO薄膜微结构及光学性能的影响。实验结果表明:制备所得薄膜均为六角纤锌矿结构,具有沿(002)晶面择优取向生长的特点,其晶格常数、晶粒尺寸、透过率、光学能隙、可见荧光、结晶质量等都与衬底温度密切相关,当衬底温度为250 ℃,溅射功率160 W,氩气压强0.5 Pa,氩气流速8.3 mL/min,沉积时间60 min时,所得氧化锌薄膜样品取向性最好,晶粒尺寸最大,薄膜结构致密,具有良好的光学性能和结晶质量。     

溅射功率对铝铬共掺杂氧化锌透明导电薄膜特性的影响(英文)

室温下,利用直流磁控溅射法在玻璃衬底上制备了铝铬共掺杂氧化锌薄膜,研究了溅射功率(55-130 W)对薄膜结构、残余应力、表面形貌及其光电性能的影响。结果表明,ZnO(002)衍射峰的强度随着溅射功率的增大而增强,晶体结构得以改善。晶格常数、压应力和电阻率均随着溅射功率的增大而减小。当溅射功率为130 W时,制备的ZnO∶Al,Cr薄膜的最低电阻率可达1.09×10-3Ω.cm。功率由55 W增大到130 W时,光学带隙由3.39 eV增大到3.45 eV。紫外-可见透射光谱表明,所有薄膜在可见光范围内平均透过率均超过89%。     

高硼硅玻璃薄膜的磁控溅射沉积及性能研究

本文采用射频磁控溅射法,以高硼硅玻璃为靶材,在高硼硅玻璃基底上制备高硼硅玻璃薄膜。探讨磁控溅射法与熔融法制得的高硼硅玻璃的性能差异,研究磁控溅射功率对高硼硅玻璃薄膜质量的影响。通过X射线衍射仪(XRD)、傅里叶红外光谱仪(FT-IR)、X射线光电子能谱仪(XPS)、扫描电镜(SEM)、台阶仪、紫外可见(UV-Vis)分光光度计和纳米压痕仪器等对薄膜的物相结构、成分、沉积速率、透光率,以及纳米硬度和杨氏模量进行表征与分析。结果表明:本实验所制备的高硼硅玻璃薄膜为非晶态结构;当工作气压为0.6 Pa时,薄膜的沉积速率随溅射功率上升不断增加;对比不同溅射功率下的透光率,发现高硼硅玻璃薄膜对基体的透光性影响较小,当溅射功率为150 W,可见光透光率损失仅为2%;不同溅射功率下获得薄膜的纳米硬度和杨氏模量随溅射功率先增大后减小,在120 W时达到最大峰值,相较于原玻璃基底分别提升3%和3.5%。     

蓝宝石衬底上磁控溅射法室温制备外延ZnO薄膜

在室温条件下,采用磁控溅射方法在蓝宝石(0001)衬底上制备了外延的ZnO薄膜.采用原子力显微镜(AFM)、X射线衍射仪(XRD)、可见-紫外分光光度计系统研究了ZnO薄膜微观结构和光学特性.AFM测量结果表明ZnO薄膜具有较为均匀的ZnO晶粒,表面平整,具有较小的均方根粗糙度(0.9 nm);X射线衍射结果表明制备的ZnO薄膜为具有六角纤锌矿结构的外延薄膜;光学透射谱显示样品在可见光范围内具有较高的透过性,并在370 nm附近出现一个较陡的吸收边,表明在室温下制备出了具有较高质量的ZnO薄膜.     

射频磁控溅射生长ZnO薄膜及性能研究

采用射频磁控溅射技术在玻璃衬底生长ZnO及ZnO∶ Al薄膜,通过改变氩氧比、衬底温度和溅射功率获得样品.用X射线衍射仪、紫外-可见分光光度计、扫描电子显微镜进行表征.结果发现:室温下40W的溅射功率1h的溅射时间,改变氩氧比获得样品.XRD图谱中无明显衍射峰出现;紫外可见光分光光度计测试结果显示400nm波长以下,透光率在90;以上.说明薄膜生长呈无定形.衬底温度高于200℃样品,XRD有明显(002)衍射峰出现,在400～ 800 nm波长范围,透光率在88;以上,衬底温度300℃时,XRD衍射峰半高宽最小,晶粒尺寸大.TEM显示:衬底300℃晶粒尺寸最大,晶体发育好.在200℃掺铝ZnO薄膜,(002)峰不明显,有(101)峰出现.     

热处理工艺对室温制备ZnO:Al薄膜结构与光电性能的影响

采用室温溅射加后续退火工艺制备了ZnO∶ Al透明导电薄膜.研究了热处理工艺对薄膜微观结构和光电性能的影响.研究表明:退火有助于减小Al~(3+)对Zn~(2+)的取代造成的晶格畸变,消除应力,促进晶粒长大,有效提高电子浓度和迁移率,降低电阻率;当溅射功率为80 W、退火温度为320 ℃时,薄膜的电阻率可低至8.6×10~(-4) Ω·cm;退火气氛对薄膜的导电性能有较大影响,真空退火可使吸附氧脱附,大大降低薄膜的方块电阻.而退火温度和退火气氛均对ZnO∶ Al薄膜的透光率没有明显影响,薄膜的透光率在86;以上.     

Microstructural characteristics and crystallographic evolutions of Ga-doped ZnO films grown on sapphire substrates at high temperatures by RF magnetron sputtering

The microstructural characteristics and crystallographic evolutions of Ga-doped ZnO (GZO) films grown at high temperatures were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The GZO films with various film thicknesses were grown on (0 0 0 1) Al₂O₃ substrates at 750 °C by RF magnetron sputtering using a 2 wt% Ga-doped ZnO single target. The (0 0 0 2) ZnO peaks in the XRD patterns shifted to a higher angle with increasing film thickness and an additional (1 0 1¯ 1) ZnO peak was observed in the final stage of film growth. HRTEM showed the epitaxial growth of GZO films in the initial growth stage and the formation of surface protrusions in the intermediate stage due to elastic relaxation. The surface protrusions consisted of {1 0 1¯ 1}, {1 0 1¯ 3}, and {0 0 0 2} planes. After the surface protrusions had formed, a GZO film with many c-axis tilted grains formed due to plastic relaxation, where the tilted grain boundaries had an angle of 62° to the substrate. The formation of the protrusions and c-axis tilted grains was closely related to the strain status of the film induced by Ga incorporation, high-temperature growth and a high film thickness.     

Zinc oxide – analogue of GaN with new perspective possibilities

Zinc oxide due to specific electrical, optical and acoustic properties is the important semiconductor material, which has many various applications. There is growing interest in ZnO due to its potential applicability for optoelectronic devices such as light‐emitting diodes, laser diodes and detectors for UV wavelength range. ZnO properties are very close to those of widely recognized semiconductor GaN. The band gap of ZnO (3.37 eV) is close to that of GaN (3.39 eV) but ZnO exciton binding energy (60 meV) is twice larger than that of GaN (28 meV). Optically pumped UV lasing have been demonstrated at room temperature using high textured ZnO films. The excitonic gain close to 300 cm^–1 was achieved. ZnO thin films are expected to have higher quantum efficiency in UV semiconductor laser than GaN. The physical properties of ZnO are considered. PEMOCVD technology was used to deposit piezoelectric and highly transparent electroconductive ZnO films. Their properties are discussed. The experiments on polycrystalline ZnO films deposited by RF magnetron sputtering at different partial pressure of oxygen are presented. AFM images were studied in tapping mode for deposited films. The investigated films were dielectric ones and had optical transparency within 65‐85% at thickness in the interval 0.2‐0.6 μm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Analysis of the growth of RF sputtered ZnO thin films using the optical reflective second harmonic generation

Reflective second harmonic generation (RSHG) is used to analyze the growth condition of poly crystal zinc oxide (ZnO) film with a c-axis orientation, grown on the Si substrate by RF magnetron sputtering technique. It elucidates physical phenomena exhibited by growing ZnO thin films. Connecting with analytical results of the characteristic parameters derived from the X-ray patterns and SEM images, the relationship between the RSHG intensity and the substrate temperature reveals that the effect of the grain boundaries is the domination of the RSHG mechanism. The inclined structures of ZnO films on the Si substrate are explained with reference to these RSHG patterns.     

Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure

Highly c-axis-oriented ZnO films were successfully deposited on the nucleation sides of freestanding diamond films by RF reactive magnetron sputtering. I–V characteristics of ultraviolet (UV) photodetectors with ZnO/diamond structure were studied and a significant photoresponse was observed under UV light illumination. The dark-current and the photocurrent of the ZnO photodetectors were relative to the grain size and the quality of ZnO films. For the photodetector with a bigger grain size, a weaker dark current and a stronger photocurrent were obtained under 10 V bias voltage. The photocurrent rise and decay process confirmed the carrier-trapping effect.     

高掺锌/镁铌酸锂薄膜的光电性质

室温下采用射频磁控溅射(RFMS)技术在玻璃与硅基板上分别沉积了纯铌酸锂LN薄膜、高掺锌(6%,摩尔分数,下同)LN∶ZnO薄膜和高掺镁(5%)LN∶MgO薄膜,并在575 ℃条件下退火进一步提高薄膜的结晶度。通过原子力显微镜(AFM)、X射线衍射(XRD)、紫外可见吸收(UV-Vis)和椭偏仪等测试研究了三种铌酸锂薄膜的形貌、结构和光学性质。XRD分析表明掺杂铌酸锂薄膜和纯铌酸锂薄膜具有相同的生长取向,AFM、XRD、UV-Vis测试结果表明,掺杂将增大铌酸锂薄膜的晶粒尺寸,光学带隙的红移现象与晶粒尺寸相关,且掺Mg的影响大于掺Zn。此外利用霍尔效应测试仪研究了LN、LN∶ZnO和LN∶MgO薄膜的电学性质,测试结果表明三种薄膜均为n型半导体,其中LN∶MgO薄膜电导率的变化趋势不同于LN∶ZnO和LN薄膜,且发现温度在18~50 ℃范围内,随着温度的升高,LN∶MgO薄膜的电导率变化微小,而LN∶ZnO和LN薄膜的电导率逐渐增大。     

UV,violet and blue‐green luminescence from RF sputter deposited ZnO:Al thin films

The mechanism of ultraviolet (UV), violet and blue green emission from ZnO:Al (AZO) thin films deposited at different radio frequency (r.f.) powers on glass substrates was investigated. The structure and surface morphology of AZO films have also been observed. The optical transmittance spectra shows more than 80% transmittance in the visible region and the band gap is found to be directly allowed. From the photoluminescence measurement, intense UV and blue green luminescence is obtained for the samples deposited at higher sputtering powers. The mechanism of luminescence suggests that UV luminescence of AZO thin film is related to the transition from near band edge to the valence band and the concentration of antisite oxide (O_zn) increases with increase in r.f. power which in turn increases the intensity of green band emission while the violet PL is due to the defect level transition in the grain boundaries of AZO films. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

衬底温度对直流反应磁控溅射法制备的N掺杂p型ZnO薄膜性能的影响

利用直流反应磁控溅射法(纯金属锌作为靶材,Ar-N2-O2混合气体作为溅射气体)在石英玻璃衬底上制备了N掺杂p型ZnO薄膜.通过XRD、Hall和紫外可见透射谱分别研究了衬底温度对ZnO薄膜结构性能、电学性能和光学性能的影响.XRD结果显示所有制备的薄膜都具有垂直于衬底的c轴择优取向,并且随着衬底温度的增加,薄膜的晶体质量得到了提高.Hall测试表明衬底温度对p型ZnO薄膜的电阻率具有较大影响,400℃下生长的p型ZnO薄膜由于具有较高的迁移率(1.32 cm2/Vs)和载流子浓度(5.58×1017cm-3),因此表现出了最小的电阻率(8.44Ω·cm).     

衬底温度对碲化镉薄膜结构及光学性能的影响

碲化镉(CdTe)因具有良好的光电性能和吸收性能经常被作为太阳电池的吸收层材料.以纯度为99.99;的CdTe陶瓷靶为靶材在玻璃衬底上采用射频磁控溅射的方法制备了一系列的CdTe薄膜,研究了衬底温度对样品薄膜的厚度、结构和光学性能的影响.结果表明:随着衬底温度的增加薄膜的厚度在逐渐地减少;制备的薄膜都是立方闪锌矿结构且具有高度的(111)面择优取向;薄膜对可见光有较好的吸收性能,随衬底温度的增加而减小.     

Thickness Dependence of Electrical and Structural Properties of FTO Films

Fluorine (0.8 M) doped tin oxide films of various thicknesses were prepared on heated glass substrates (520 °C) by spray pyrolysis technique. The chemical and thermal stabilities of FTO films were found to be very good. The characterization has been done by XRD and found to agree with the reported results. As thickness of the film increases, intensities of peaks increased. From the X-ray diffraction data, grain size of the crystallites have been calculated. The electrical and structural properties were studied for different thicknesses. Hall measurements showed that thicker films have relatively high Hall mobilities compared to those of thinner films. The high carrier concentration showed that the films are degenerate. The relationship between carrier concentration and Hall mobility revealed that the ionized impurity scattering centres were the dominant cause of scattering.     

Nb掺杂ZnO透明导电薄膜的结构以及光电性能研究

采用直流磁控溅射法在玻璃衬底上制备了高质量的Nb掺杂ZnO( NZO)透明导电薄膜.为了研究薄膜厚度对薄膜性质的影响,制备了五个厚度分别为239 nm,355 nm,489 nm,575 nm和679 nm的样品.XRD结果表明,ZnO∶ Nb薄膜是具有六角纤锌矿结构的多晶薄膜,并且具有垂直于衬底的c轴择优取向.随着膜厚的增加,薄膜的结晶质量明显提高.当厚度从239 nm增加到489 nm时,平均晶粒尺寸从19.7 nm增加到24.7 nm,薄膜的电阻率持续减小;当厚度进一步增加时,晶粒尺寸略有减小,电阻率有所增加.本实验获得的最低电阻率为4.896×10-4Ω·cm.随膜厚的增加,光学带隙先增大后减小.所有薄膜在可见光区域的平均透过率均超过88.3;.     

磁控溅射Cu薄膜的光电性能研究

利用磁控溅射技术,通过正交试验设计方法,在K9光学玻璃基底上制备了Cu薄膜,研究了溅射时间、基底温度和氩气流量对Cu薄膜光电性能的影响.研究表明:Cu薄膜的透射谱在紫外波段362 nm处有明显吸收峰,但在可见光波段吸收强度较弱,说明Cu膜在可见波段有较高的透光性;膜厚度增加则光学透射率降低.电阻率随膜厚的增大,大体上呈逐渐减小的趋势;1100 nm 为临界尺寸,Cu膜厚度<1100 nm时,电阻率值变化较快;Cu薄膜厚度>1100 nm时,电阻率变化缓慢至定值.当溅射时间为25 min、基底温度为300 ℃、氩气流量为6.9 sccm时所得样品在紫外-可见光区没有吸收,且导电性好.     

p-ZnO薄膜及其异质结的光电性质

采用射频磁控溅射法,在不同的Ar∶O2条件下,以高掺磷n型Si衬底为磷掺杂源制备了p型ZnO薄膜和p-ZnO/n-Si异质结.对ZnO∶P薄膜进行了光致发光谱(PL)、霍尔参数、Ⅰ-Ⅴ特性、扫描电镜(SEM)和X射线衍射谱(XRD)等测试.结果表明,获得的ZnO∶P薄膜沿(0002)晶面高取向生长,以3.33 eV近带边紫外发光为主,伴有2.69 eV附近的深能级绿色发光峰,空穴浓度为8.982 × 1017/cm3,空穴迁移率为9.595 cm2/V·s,p-ZnO/n-Si异质结I-V整流特性明显,表明ZnO∶P薄膜具有p型导电特性.