Electrosynthesis and characterization of [Cu(Taab)(H2O)2](L)2 non-crystalline thin films

Molecular-material thin films of diaqua tetrabenzo (b,f,j,n) {1,5,9,13} tetraazacyclohexadecine copper (II) bisanthraflavates and base organic molecules L have been electrodeposited on Corning 7059 glass slices, quartz substrates with tin oxide film and (100) single-crystalline silicon (c-Si) wafers. The surface morphology and structure of the deposited films were studied by atomic force microscopy (AFM), energy-dispersive spectrophotometry (EDS), ultraviolet-visible (UV-Vis) and Fourier-transform infrared (FT-IR) spectroscopies. The IR-spectra show that compounds obtained by chemical synthesis have the same absorption bands as the amorphous thin films obtained by electrosynthesis. The conductivities and the electrical-conduction mechanisms in the thin films were also investigated. Cubic nonlinear optical (NLO) characterizations of the film samples were performed with the Z-Scan technique, with some samples exhibiting remarkably high nonlinear activity.     

Structural and optical properties of 6CaO·6SrO·7Al2O3 thin films derived by sol-gel dip coating process

The nanostructured 6CaO·6SrO·7Al₂O₃ (C6S6A7) thin films with cubic structure using calcium, strontium metals, aluminium isopropoxide and ethylene glycol monomethyl ether as stating materials has been fabricated via sol-gel route. Based on hydrolysis of Ca²⁺, Sr²⁺ and Al³⁺ in the sol-gel processing using ethylene glycol monomethyl ether as solvent have been employed as the precursor material. The films were coated on soda lime float glass by the dip coating technique and annealed at 450 °C in air atmosphere. The structure, morphology and composition of the films were investigated by Fourier transformed infrared spectroscopy, X-ray powder diffraction, scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy indicating that the films were composed of C6S6A7 nanoparticles with cubic structure. The spectral transmittance of the films was measured in the wavelength range of 200-1100 nm using an UV-visible spectrometer. It has been found that the optical properties of the films significantly affected by precursor chemistry and annealing temperature due to the improvement of the crystallinity of the films with increasing annealing temperature and became stable when the annealing temperature is higher than 450 °C. The C6S6A7 films annealed at 450 °C had high transparency about 80% in wide visible range.     

Structure related properties of obliquely deposited amorphous a-As2S3 thin films

The surface roughness and morphology growth of a-As₂S₃ films vacuum deposited within a large scale of vapor incidence angles are studied. The formation of a columnar structure at normal and oblique deposition is demonstrated. The relationship between the micromorphology of the films and their optical and mechanical properties is revealed for as grown and annealed samples.     

Laser wavelength effect on structural and optical properties of Cd34Se66 nanocrystalline thin film

Cadmium Selenide (Cd₃₄Se₆₆) thin films are deposited on a glass substrate using the thermal evaporation method at room temperature. The Cd₃₄Se₆₆ films are characterized using XRD. The crystallite size of the film is calculated from XRD data, which is found as 29.61 nm as-deposited. It is also found that crystallite size of Cd₃₄Se₆₆ changed after irradiation with N₂ and Nd:YAG laser. The changes in the optical properties of the films after irradiation with N₂ laser and Nd:YAG laser are also studied in the wavelength range of 300-700 nm and it is found that the optical band gap of the Cd₃₄Se₆₆ films changed after laser irradiation.     

Studying of optical and morphological properties of SiO2-MOx (M: Co/Cu) glasses prepared by the sol-gel method

The cobalt oxide-silica and copper oxide-silica glasses are prepared by the sol-gel method. Tetra-Ethyl-Ortho-Silicate (TEOS) is used as source of the silica and transition metal nitrate is used as the dopant. The morphological, structural and optical properties of the samples are investigated by Scanning Electron Microscope (SEM), Energy Dispersion Analysis by X-ray (EDAX), X-ray diffraction (XRD) and Ultra-Violet/Visible (UV/Vis) spectrophotometer. The influences of heat treatment temperature and withdrawal rate on absorption/transmission spectra are investigated in the range 400-800 nm. In the cobalt oxide-silica, the intensity and position of absorption bands (λ_max) are changed by heat treatment. These behaviors are explained through the Bathochromic and the Hyperochromic effects. In addition, the effect of the withdrawal rate on transmission curves is explained in terms of the Levich equation and Beer-Lambert law.     

Optical Properties of Bi2O3-TeO2-B2O3 Glasses

Glasses of the Bi₂O₃-TeO₂-B₂O₃ ternary system were developed and their linear and nonlinear optical properties were investigated. The absorption edges of these glasses were found to be 367-384 nm with a good transmittance in visible wavelength, although they exhibit the refractive indices as high as 1.98-2.12 at 633 nm. The absorption edges are quite steep and they are analyzed by the Urbach theory. The obtained Urbach energies of these glasses are 73-79 meV which are comparable to silica glasses. The high refractive index and its glass composition dependency are discussed according to the basics of the electronic polarizability and optical basicity. The high third order nonlinear susceptibility χ⁽³⁾ = 2.0 × 10^− 12 esu at 800 nm was also obtained in the 36Bi₂O₃-18TeO₂-46B₂O₃ glass.     

Structure and optical characterization of photochemically prepared ZrO2 thin films doped with erbium and europium

Zirconium oxide thin films loaded with 10, 30 and 50 mol% lanthanide ions (Er or Eu) have been successfully prepared by direct UV (254 nm) irradiation of amorphous films of β-diketonate complexes on Si(1 0 0) substrates, followed by a post annealing treatment process. The resultant films were characterized by X-ray photoelectron spectroscopy and Atomic Force Microscopy. The results showed that the stoichiometry of the resulting films were in relative agreement with the composition of the precursor films. The effects of annealing as well as the lanthanide ion loading on the photoluminescence (PL) emission intensity were investigated, finding that thermal treatment decreases surface roughness as well as PL emission intensity.     

Optical properties and structure of thin films from the system GeSe2-Sb2Se3-AgI

Chalcohalide glasses from the GeSe₂-Sb₂Se₃-AgI system were synthesized by taking preliminary prepared GeSe₂, Sb₂Se₃ and AgI in their molecular percentages and melting them in an evacuated quartz ampoule. Thin films from the above system were deposited using vacuum thermal evaporation at different conditions on optical glass substrates BK-7. Using X-ray microanalysis it was found that the film composition differs in a certain degree from the bulk composition. Optical transmission and reflection measurements were carried out in the spectral range 400-2500 nm. The optical constants of films thicker than 400 nm (refractive index, n, and absorption coefficient, k) and the film thickness (d) were calculated using a method developed by Konstantinov. The values of n change from 2.38 for thin GeSe₂ films up to 3.48 for thin Sb₂Se₃ films while the optical band gap decreased from 1.92 eV to 1.29 eV, respectively. After exposure to light the photo-induced changes in the optical parameters were negligible for GeSe₂ and Sb₂Se₃ films and increase for some of the ternary samples. Using IR spectroscopy some conclusions about changes in the film structure were drawn.     

Structural and electrical characterization of ALCVD ZrO2 thin films on silicon

We report on the structural and electrical properties of ZrO₂ thin layers grown on Si by atomic layer chemical vapour deposition. Atomic force microscopy, X-ray diffraction, X-ray reflectivity and time-of-flight secondary ion mass spectrometry have been used to characterize as-grown and annealed samples. High frequency capacitance-voltage measurements have been performed to determine the capacitance of the gate dielectric stack. The ZrO₂ film is found to be polycrystalline. Electrical and structural data suggest a coherent picture of film modification upon annealing.     

Structural and optical properties of Mg‐doped ZnO thin films prepared by a modified Pechini method

ZnO thin films with different Mg doping contents (0%, 3%, 5%, 8%, 10%, respectively) were prepared on quartz glass substrates by a modified Pechini method. XRD patterns reveal that all the thin films possess a polycrystalline hexagonal wurtzite structure. The peak position of (002) plane for Mg‐doped ZnO thin films shifts toward higher angle due to the Mg doping. The crystallite size calculated by Debey‐Scherrer formula is in the range of 32.95–48.92 nm. The SEM images show that Mg‐doped ZnO thin films are composed of dense nanoparticles, and the thickness of Mg‐doped ZnO thin films with Mg doped at 8% is around 140 nm. The transmittance spectra indicate that Mg doping can increase the optical bandgap of ZnO thin films. The band gap is tailored from 3.36 eV to 3.66 eV by changing Mg doping concentration between 3% and 10%. The photoluminescence spectra show that the ultraviolet emission peak of Mg‐doped ZnO thin films shifts toward lower wavelength as Mg doping content increases from 3% to 8%. The green emission peak of Mg‐doped ZnO thin films with Mg doping contents were 3%, 8%, and 10% is attributed to the oxygen vacancies or donor‐acceptor pair. These results prove that Mg‐doped ZnO thin films based on a modified Pechini method have the potential applications in the optoelectronic devices.     

Preparation and characterization of ZnO-TiO2 films obtained by sol-gel method

The sol-gel route has been applied to obtain ZnO-TiO₂ thin films. For comparison, pure TiO₂ and ZnO films are also prepared from the corresponding solutions. The films are deposited by a spin-coated method on silicon and glass substrates. Their structural and vibrational properties have been studied as a function of the annealing temperatures (400-750 °C). Pure ZnO films crystallize in a wurtzite modification at a relatively low temperature of 400 °C, whereas the mixed oxide films show predominantly amorphous structure at this temperature. XRD analysis shows that by increasing the annealing temperatures, the sol-gel Zn/Ti oxide films reveal a certain degree of crystallization and their structures are found to be mixtures of wurtzite ZnO, Zn₂TiO₄, anatase TiO₂ and amorphous fraction. The XRD analysis presumes that Zn₂TiO₄ becomes a favored phase at the highest annealing temperature of 750 °C. The obtained thin films are uniform with no visual defects. The optical properties of ZnO-TiO₂ films have been compared with those of single component films (ZnO and TiO₂). The mixed oxide films present a high transparency with a slight decrease by increasing the annealing temperature.     

Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis

This study investigated the effect of the substrate temperature on the structural, optical, morphological, and electrical properties of undoped SnO₂ films prepared by a spray deposition method. The films were deposited at various substrate temperatures ranging from 300-500 °C in steps of 50 °C and characterized by different optical and structural techniques. X-ray diffraction studies showed that the crystallite size and preferential growth directions of the films were dependent on the substrate temperature. These studies also indicated that the films were amorphous at 300 °C and polycrystalline at the other substrate temperatures used. Infrared and visible spectroscopic studies revealed that a strong vibration band, characteristic of the SnO₂ stretching mode, was present around 630 cm⁻¹ and that the optical transmittance in the visible region varied over the range 75-95% with substrate temperature, respectively. The films deposited at 400 °C exhibited the highest electrical conductivity property.     

Determination of the Li/Nb ratio in LiNbO3 crystals grown by Czochralski method with K2O added to the melt

Off-congruent lithium niobate single crystals were grown by the Czochralski method with K₂O added to the congruent melts in a concentration varying between 2 and 10.5 wt%. The Li/Nb ratio was determined by means of indirect methods such as the fundamental absorption edge positon, the IR vibrational spectrum, lattice parameters and the variation of the refractive indices. The data presented in this work show that the Li/Nb ratio can be controlled by the amount of K₂O added to the congruent melt. Moreover, the techniques employed for characterization are good tools for the determination of the Li/Nb ratio.     

Spectral properties of PbO-P2O5 glasses

The optical absorption spectra of xPbO-(100 − x) P₂O₅ glasses where x = 5, 10, 15, 20, 25, and 30 is reported. The spectral absorption of these glasses was measured in the spectral range 300-900 nm at room temperature. Optical absorption spectra show that the absorption edge has a tail extending towards lower energies. The edge shifts nearly linearly towards higher energies with increasing PbO content. The degree of the edge shift was found to depend on the PbO content and is mostly related to the structural rearrangement and the relative concentrations of the glass basic units. The optical energy gap increases, from 2.55 to 3.05 eV by increasing PbO content from 5 to 30 mol%. The width of the localized states is decreased by increasing PbO content.     

Effects of CaO on crystallization properties in BaO-SrO-TiO2-SiO2 glass-ceramics

The role of calcium oxide (CaO) was investigated in the crystallization of BaO-SrO-TiO₂-SiO₂ glass. The CaO dopant altered the oriented growth facets of crystal unit cells in the glass-ceramics. The crystallites are acicular in micron scale in the samples having as small as 1% CaO dopant, but are long granular in the nanometer scale in the sample without CaO. The glass-ceramics which have nano crystallites are observed with a less crystallization density qualitatively, a higher transmissivity in the wavelength range of 200-2600 nm, and 30% lower piezoelectric coefficient, d₃₃, at 9.5 ± 0.3 pC/N than those glass-ceramics having CaO in the study.     

Substrate temperature effect on the optical properties of amorphous Sb2S3 thin films

Sb₂S₃ amorphous thin films were prepared by thermal evaporation of corresponding powder on thoroughly cleaned glass substrates held at temperature in the range 300‐473 K. X‐ray diffraction and atomic force microscopy have been used to order to identify the structure and morphology of surface thin films. The optical constants of the deposition films were obtained from the analysis of the experimental recorded transmission data over the wavelength range 400‐1400 nm. An analysis of the absorption coefficient values revealed an optical indirect transition with the estimation of the corresponding band gap values. It was found that the optical band gap energy decrease with substrate temperature from 1.67 eV at 300 K to 1.48 eV at 473K. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Preparation and characterization of ZrO2-SiO2 binary films for planar optical waveguides

ZrO₂-SiO₂ binary films for active optical waveguides were prepared by the sol-gel method with zirconium oxychloride and tetraethoxysilane as precursors. The main factors that influence the film thickness and refractive index have been found. The relationship between the film refractive index composition and heat treatment temperature has been determined. The continuous tuning of the thickness and refractive index of the thin films has also been achieved, which will open up new possibilities in the development of active optical waveguides.     

Influence of thermoannealing on crystallinity and optical properties of Sb2S3 thin films

Sb₂S₃ thin films are obtained by evaporating of Sb₂S₃ powder onto glass substrates maintained at room temperature under pressure of 2×10^‐5 torr. The composition of the thin films was determined by energy dispersive analysis of X‐ray (EDAX). The effect of thermal annealing in vacuum on the structural properties was studied using X‐ray diffraction (XRD) technique and scanning electron microscopy (SEM). The as‐deposition films were amorphous, while the annealed films have an orthorhombic polycrystalline structure. The optical constants of as‐deposited and annealed Sb₂S₃ thin films were obtained from the analysis of the experimental recorded transmission spectral data over the wavelength range 400‐1400 nm. The transmittance analysis allowed the determination of refractive index as function of wavelength. It was found that the refractive dispersion data obeyed the single oscillator model, from which the dispersion parameters (oscillator energy, E₀, dispersion energy, E_d) were determined. The static refractive index n(0), static dielectric constant, ε_∞, and optical band gap energy, E_g, were also calculated using the values of dispersion parameters. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Morphology,composition, structure and optical properties of thermally annealed Cu2O thin films prepared by reactive DC sputtering method

Abstract

Thin films copper oxides are perspective materials for many optoelectronic applications, including photovoltaics. The samples were deposited on glass and silicon substrates by magnetron sputtering method using Modular Platform PREVAC. After deposition the samples were thermally treated by annealing in oxygen atmosphere for 60?min at 450?°C. Morphology confirms that all the films have crystalline structure. Optical measurements show that the films have wide band gap within the range 2.20÷2.48?eV before and 2.03÷2.40?eV after annealing. The article presents the discussion about the influence of annealing on Cu₂O thin film parameters.     

Studies on optical properties of polycrystalline SnO2:Sb thin films prepared using SnCl2 precursor

Optical properties of spray deposited antimony (Sb) doped tin oxide (SnO₂) thin films, prepared from SnCl₂ precursor, have been studied as a function of antimony doping concentration. The doping concentration was varied from 0‐4 wt.% of Sb. All the films were deposited on microscope glass slides at the optimized substrate temperature of 400 °C. The films are polycrystalline in nature with tetragonal crystal structure. The doped films are degenerate and n‐type conducting. The sheet resistance of tin oxide films was found to decrease from 38.22 Ω/□ for undoped films to 2.17 Ω/□ for antimony doped films. The lowest sheet resistance was achieved for 2 wt.% of Sb doping. To the best of our knowledge, this sheet resistance value is the lowest reported so far, for Sb doped films prepared from SnCl₂ precursor. The transmittance and reflectance spectra for the as‐deposited films were recorded in the wavelength range of 300 to 2500 nm. The transmittance of the films was observed to increase from 42 % to 55 % (at 800 nm) on initial addition of Sb and then it is decreased for higher level of antimony doping. This paper investigates the variation of optical and electrical properties of the as‐deposited films with Sb doping. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)