Intrinsic and impurity infrared absorption in As2Se3 glass

A quantitative study of infrared absorption in the 250–4000 cm^?1 region of As₂Se₃ glasses doped with small amounts of As₂O₃ or purified by various procedures has been carried out with particular attention to absorption in the wavelength regions of the CO₂ and CO lasers. The dependence of the relative intensities of the oxide impurity bands in the 650–1340 cm^?1 region on the total amount of As₂O₃ added to the glass indicates the existence of three distinct oxide-impurity species. A number of higher-frequency impurity bands which are due to the presence of hydrogen in the glass and whose intensities are highly dependent on the glass-melting conditions have been observed and classified. Intrinsic multiphonon absorption in the 400–1100 cm^?1 region has been interpreted in terms of combination and overtone bands of the two highest-frequency fundamental vibrational modes. Absorption coefficients of As₂Se₃ glass in the 920–1090 cm^?1 CO₂ laser region are limited by intrinsic multiphonon absorption to values of around 10^?2 cm^?1. The lowest absorption coefficients measured in the 1700–2000 cm^?1 CO laser region were around 2 × 10^?3 cm^?1 and may contain contributions from hydrogen-impurity bands.     

Electrical and optical properties of Sn10Sb20−xBixSe70 (0 x 8) glassy films

Chalcogenide glasses are interesting materials due to their infrared transmitting properties and photo-induced effects exhibited by them. Thin films of the glasses Sn₁₀Sb_20−xBi_xSe₇₀ (0 x 8) prepared by melt quenching technique were evaporated in a vacuum better than 10⁻⁵ mbar. Optical transmission spectra of all the deposited films were obtained in a range 400–2500 nm. The optical band gap and the absorption coefficient were calculated from the transmission data and refractive index was calculated using the swanepoel method. The optical band gap initially increases with increase in Bi content (for x = 2) and then decreases sharply for higher Bi concentrations. The refractive index as well as absorption coefficient decrease with increase in wavelength. The dark activation energy initially increases with increase in Bi content and then decreases with further addition.     

An investigation of the kinetic transformation mechanism of Ge12.5Te87.5 chalcogenide glass under non-isothermal regime

Differential scanning calorimetry (DSC) technique was used to study the kinetics of amorphous to crystalline transformation in Ge_12.5Te_87.5 chalcogenide glass. The kinetic parameters of glassy Ge_12.5Te_87.5 under non-isothermal conditions are analyzed by the model-free and model-fitting approaches from a series of experiments at different constant heating rates (5-50 K/min). The effective activation energy of crystallization was determined by analyzing the data using the isoconversional methods of Kissinger-Akahira-Sunose (KAS), Tang, Starink, Flynn-Wall-Ozawa (FWO) and Vyazovkin. The analysis of the present data shows that the effective activation energy of crystallization is constant throughout the entire interval of conversions and hence with temperature. The transformation mechanism examined using the local Avrami exponents indicates that one mechanism (three-dimensional growth) is responsible for the transformation process for all heating rates used. The reaction model that may describe the transformation process of the Ge_12.5Te_87.5 chalcogenide glass is the Avrami-Erofeev model (g(α) = [− ln(1 − α)]^1/n) with n = 3 for all heating range at the whole range of crystallized fraction (α = 0.05-0.95). A good agreement between the experimental and the reconstructed (α-T) curves has been achieved. The transformation from amorphous to crystalline phase in Ge_12.5Te_87.5 chalcogenide glass demonstrates a single-step mechanism.     

Bulk and impurity infrared absorption in 0.5 As2Se30.5 GeSe2 glass

A study of infrared absorption in the 250–4000 cm^?1 region has been carried out for 0.5 As₂Se₃0.5 GeSe₂ glasses quantitatively doped with oxide impurity. The frequencies of the intrinsic 2- and 3-phonon absorption bands at 490 and 690 cm^?1 correspond well to those predicted from combinations of the high frequency bands in the first order IR and Raman spectra of As₂Se₃ and GeSe₂ glasses.Glasses doped with As₂O₃ exhibit the same oxide impurity absorptionbands as those doped with GeO₂. Unlike As₂Se₃ glass, at impurity concentrations up to 1000 ppm As₂O₃, 0.5 As₂Se₃0.5 GeSe₂ glass exhibits only one major oxide impurity species, characterized by absorption bands at 780 and 1260 cm^?1 and due to oxygen bonded to network Ge. The observation of a much weaker network AsO vibration band at 670 cm^?1 confirms that oxygen bonds preferentially to Ge in this glass. The same minor oxide species appears to determine excess IR absorption at the CO₂ laser wavelength of 10.6 μm in both As₂Se₃ and 0.5 As₂Se₃ 0.5 GeSe₂ glasses. The frequencies and intensities of absorption bands due to hydrogen impurities are also quite comparable for these two materials.     

Electrosynthesis and characterization of [Cu(Taab)(H2O)2](L)2 non-crystalline thin films

Molecular-material thin films of diaqua tetrabenzo (b,f,j,n) {1,5,9,13} tetraazacyclohexadecine copper (II) bisanthraflavates and base organic molecules L have been electrodeposited on Corning 7059 glass slices, quartz substrates with tin oxide film and (100) single-crystalline silicon (c-Si) wafers. The surface morphology and structure of the deposited films were studied by atomic force microscopy (AFM), energy-dispersive spectrophotometry (EDS), ultraviolet-visible (UV-Vis) and Fourier-transform infrared (FT-IR) spectroscopies. The IR-spectra show that compounds obtained by chemical synthesis have the same absorption bands as the amorphous thin films obtained by electrosynthesis. The conductivities and the electrical-conduction mechanisms in the thin films were also investigated. Cubic nonlinear optical (NLO) characterizations of the film samples were performed with the Z-Scan technique, with some samples exhibiting remarkably high nonlinear activity.     

Variation of luminescence properties of Na2O-CaO-SiO2: Nd glass with crystallinity

The optical absorption and emission intensities of Nd³⁺-doped transparent glass-ceramics with high crystallinity in Na₂O-CaO-SiO₂ (NSC) system were studied. The transmittance of NCS decreases with increasing degree of crystallinity, however it still remains 65.5% at λ = 710 nm when the crystallization is almost completed. Judd-Ofelt theory is performed to evaluate the radiative transition probability as well as quality factor, branching ratio and emission cross section. The maximum values of Ω₂ and emission cross section (⁴F_3/2 → ⁴I_11/2) of NCS are obtained after nucleating at 630 °C for 10 h. The quality factor increases with increasing crystallinity, while branching ratio for ⁴F_3/2 → ⁴I_11/2 is opposite. The results show that transparent glass-ceramic with high crystallinity is a potential laser host for 1.06 μm emission.     

X-ray photoelectron spectroscopy studies of thin GexSb40−xS60 chalcogenide films

Thin Ge_xSb_40−xS₆₀ (x=5, 15, 20, 25 and 27) chalcogenide films have been investigated by X-ray photoelectron spectroscopy (XPS). X-ray photoelectron spectra show that there is a peculiarity in the relative intensity ratio of the Sb 4d photoelectron peak associated with Sb₂S₃ to the Sb 4d photoelectron peak associated Sb₂S₅ at an average co-ordination number Z of 2.65-2.67. After contamination and photo-oxidation layers were removed from the surface of the films, X-ray photoelectron spectra were measured again. It has been found that binding energies of the Ge 2p and Sb 3d_3/2 photoelectron peaks, which reflect the electronic structure at lower core energy levels, are independent of Z. However, the binding energies of the Ge 3d and Sb 4d photoelectron peaks are more sensitive to Z and have a discontinuity at Z=2.65.     

Study of microstructure in Agx(As0.33Se0.67)100−x chalcogenide glasses

Glasses with general formula Ag_x(As_0.33Se_0.67)_100−x were studied by means of modulated differential scanning calorimetry (MDSC), conductivity and permittivity measurements and atomic force acoustic microscopy (AFAM). In the whole range of doping (x = 2–12 at.% Ag) a phase separation was supposed. The proportional amount of the ion-conductive Ag rich phase increased with the Ag content. A rapid increase (almost four orders of magnitude) in the conductivity was observed in the Ag concentration range 4–8 at.%, which could be associated with the interconnection of this ion-conductive phase. The transition from a hole conductivity (at low Ag concentration) to a mixed ionic-hole conductivity at higher Ag concentration was studied by permittivity measurements.     

Effects of CaO on crystallization properties in BaO-SrO-TiO2-SiO2 glass-ceramics

The role of calcium oxide (CaO) was investigated in the crystallization of BaO-SrO-TiO₂-SiO₂ glass. The CaO dopant altered the oriented growth facets of crystal unit cells in the glass-ceramics. The crystallites are acicular in micron scale in the samples having as small as 1% CaO dopant, but are long granular in the nanometer scale in the sample without CaO. The glass-ceramics which have nano crystallites are observed with a less crystallization density qualitatively, a higher transmissivity in the wavelength range of 200-2600 nm, and 30% lower piezoelectric coefficient, d₃₃, at 9.5 ± 0.3 pC/N than those glass-ceramics having CaO in the study.     

Study of the structural insertion of Al in the Al2O3-SiO2 and Nd2O3-Al2O3-SiO2 glass systems

Glasses in the Al₂O₃-SiO₂ and Nd₂O₃-Al₂O₃-SiO₂ systems were prepared by the sol-gel method. The gel-glass evolution was studied using near-infrared (NIR) and ultraviolet-visible (UV-VIS) spectrophotometry, X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier infrared spectroscopy (FTIR) and nuclear magnetic resonance spectroscopy (NMR). The results obtained indicate a relationship between the sample compositions, the treatment temperature and the Al coordination. In the samples of the Nd₂O₃-Al₂O₃-SiO₂ system the densification of the structure, when the treatment temperature increases, leads to the segregation of neodymium oxide particles.     

Disorder and optical absorption in amorphous silicon and amorphous germanium

The role that disorder plays in shaping the functional form of the optical absorption spectra of both amorphous silicon and amorphous germanium is investigated. Disorder leads to a redistribution of states, which both reduces the empirical optical energy gap and broadens the optical absorption tail. The relationship between the optical gap and the breadth of the absorption tail observed in amorphous semiconductors is thus explained.     

The role of PbO on crystallization in PbO-SrO-TiO2-SiO2 glass

An investigation of the crystallization in the PbO-SrO-TiO₂-SiO₂ glass system demonstrates that the crystallization temperature of the glass decreases with an increase of the mole fraction of PbO. The second crystalline phase, SrTiO₃, was present when the mole fraction of PbO is more than 0.35, and impaired the piezoelectric coefficient of the glass ceramics in the main crystalline phase, Sr₂TiSi₂O₈.     

Structure related properties of obliquely deposited amorphous a-As2S3 thin films

The surface roughness and morphology growth of a-As₂S₃ films vacuum deposited within a large scale of vapor incidence angles are studied. The formation of a columnar structure at normal and oblique deposition is demonstrated. The relationship between the micromorphology of the films and their optical and mechanical properties is revealed for as grown and annealed samples.     

Decrease in dielectric loss of CaCu3Ti4O12 by the addition of TeO2

CaCu₃Ti₄O₁₂ (CCTO) has challenged for the last few years the scientific community due to its large dielectric constant, which is almost temperature and frequency independent, from 100 K to 400 K and from 1 kHz to 1 MHz, respectively. This makes the material desirable for many electronic applications. However, the dissipation factor is very large, with tan δ values, at room temperature and 1 kHz, higher than 0.1.In our work we report how the addition of TeO₂ lowers the dielectric loss and, although there is a decrease of dielectric constant of doped samples relatively to the undoped one, high dielectric constant values are still being reached. The sample of doped CCTO with 1.5% of TeO₂ by weight, presents, at room temperature and 60 kHz, a large dielectric constant, over 3000, and a dissipation factor around 0.09, which represents a decrease on tan δ over 30% relatively to the CCTO undoped sample. Two relaxation processes were identified for all the samples, one at MHz region and the other one at low frequency region (< 1 kHz). DC bias voltage was applied up to 40 V and a strong dc bias influence on the low frequency region was observed both at dielectric and impedance responses of the undoped sample, which was much weaker than the dc bias effects on the 4% Te doped sample.Dielectric measurements will be discussed and correlated with the samples' microstructure, supported on internal barrier layer capacitance (IBLC) and surface barrier layer capacitance (SBLC) models.     

Determination of the Li/Nb ratio in LiNbO3 crystals grown by Czochralski method with K2O added to the melt

Off-congruent lithium niobate single crystals were grown by the Czochralski method with K₂O added to the congruent melts in a concentration varying between 2 and 10.5 wt%. The Li/Nb ratio was determined by means of indirect methods such as the fundamental absorption edge positon, the IR vibrational spectrum, lattice parameters and the variation of the refractive indices. The data presented in this work show that the Li/Nb ratio can be controlled by the amount of K₂O added to the congruent melt. Moreover, the techniques employed for characterization are good tools for the determination of the Li/Nb ratio.     

Te-rich Ge–Te–Se glass for the CO2 infrared detection at 15 μm

Te_80−xGe₂₀Se_x glasses have been prepared along the GeSe₄–GeTe₄ axis using the classical method in silica tube under vacuum. A phase separation domain appears for composition around Te₄₀Ge₂₀Se₄₀. Our attention was turned toward the Te-rich compositions corresponding to 1 < x < 5 at.%. These glasses are transparent from 4 to about 20 μm without any purification of the starting elements. Furthermore the difference ΔT between the crystallization temperature T_x and the vitreous transition temperature T_g lies at about 110 °C that is to say 30 °C higher than for the GeTe₄ reference glass. Finally the introduction of a few percentages of Se makes the glasses much easier to prepare and more stable against crystallization, making them drawable as optical fibers for example. Taking into account their transparency window, encompassing the CO₂ absorption band around 15 μm, the Te_80−xGe₂₀Se_x with 1 < x < 5 at.% could become matchless composition for the CO₂ infrared detection as planed by the Darwin mission of the European Space Agency.     

Nano-crystallization in LaF3–Na2O–Al2O3–SiO2 glass

Aiming at tailoring optical properties, the precipitation of LaF₃ nano-crystals in LaF₃–Na₂O–Al₂O₃–SiO₂ glass-ceramics is studied thoroughly on the nano-scale using advanced transmission electron microscopic techniques. Nano-sized phase-separation droplets enriched in lanthanum and silicon are formed already in the base glass. Within these less than 20 nm large droplets, LaF₃ crystallizes upon heat treatment. The nano-crystallization mechanism revealed is self-limited since growth is restricted by the size of the droplets. An average crystallite size of around 12 nm is achieved with a narrow size distribution since the phase-separation droplets also contain silicon not incorporated into the growing crystal. Instead, excess silicon relocated to the periphery of the pre-existing phase-separation droplets forms a diffusion barrier around the LaF₃ nano-crystals preventing further crystal growth and/or ripening.     

Structural peculiarities, and electrical and optical properties of 70TeO2·30PbCl2 glasses doped with Pr, prepared in Pt or Au crucibles

The influence of crucibles (Au or Pt) on the structure, electrical, dielectric and optical properties of 70TeO₂·30PbCl₂ glasses doped with Pr³⁺ added as a metal, chloride, or oxide, in concentrations of 500–1500 wt-ppm, is reported. The dc conductivity of ‘pure’ glasses prepared in Au crucibles is two orders of magnitude higher than that of those prepared in Pt crucibles. Upon doping, the dc conductivity of glasses prepared in Pt and Au crucibles increases or decreases, respectively. The static relative permittivity is equal to 33 ± 2. In the range of 640–700 nm, six photoluminescence (PL) peaks were observed, at 641.5, 647.1, 652.4, 660.8, 662.9, and 664.5 nm. In the range of 200–1200 cm⁻¹, seven Raman scattering (RS) peaks were observed at 184, 217, 321, 468, 654, 735 cm⁻¹, and a small peak at 650 cm⁻¹. Both spectra were deconvoluted using symmetrical Gaussian functions. Relative intensities of PL and RS bands depend on the concentration and chemical form of Pr³⁺ and on the material of the crucible. However, positions of these bands are independent of these conditions.     

Distribution of oxidation states of Cr ions in Ca or Ca/Mg co-doped Cr:Y3Al5O12 single-crystal fibers with nitrogen or oxygen annealing environments

The valence states of Cr ions in Ca or Ca/Mg co-doped Cr:Y₃Al₅O₁₂ (YAG) single-crystal fibers are studied. The fibers were grown using the laser-heated pedestal growth method, followed by annealing treatments up to 1500 °C. The concentrations of the Cr³⁺ and Cr⁴⁺ ions in octahedral and tetrahedral sites in oxygen or nitrogen environments were characterized. Above 700 °C, migration of Cr⁴⁺ between octahedral and tetrahedral sites takes place; its relative stabilization energy was estimated. For Ca,Cr:YAG annealed in an oxygen or nitrogen environment, it was 0.25 and 0.3 eV, respectively. For Mg,Ca,Cr:YAG annealed in oxygen or nitrogen, it was 0.47 and 0.49 eV, respectively. For the Ca,Cr:YAG crystal fiber (Ca/Cr=113.1%) with oxygen annealing, about 35% and 2.5% of Ca ions took part in charge compensation for Cr⁴⁺ in the octahedral and tetrahedral sites, respectively. The density of oxygen vacancies depends on the concentration of Ca ions. The estimated ratios of the unreacted oxygen vacancies to total oxygen vacancies were about 63% and 88% for oxygen and nitrogen annealing, respectively. The main limitation on the concentration of Cr⁴⁺ in the tetrahedral site of YAG is the presence of unreacted oxygen vacancies.     

Redox freezing temperature and Bartenev equation in a 25Na2O-15B2O3-60SiO2 glass doped with chromium and manganese

In a melt with the base mol% composition 25Na₂O-15B₂O₃-60SiO₂, doped with chromium and manganese, a redox reaction takes place during cooling the melt. This reaction was studied using high temperature UV-vis spectroscopy. Above 600 °C, the reaction is in equilibrium and shifted during cooling to the Cr³⁺ and Mn³⁺ species. At temperatures between 500 and 600 °C, the kinetics of the redox reaction is decisive and the cooling rate plays an important part. At temperatures < 500 °C, the reaction is frozen in. The smaller the cooling rate, the smaller is the Cr⁶⁺ concentration and the lower is the fictive redox temperature.The kinetics of the reaction was described by a differential equation assuming Arrhenian behaviour. The equation was numerically solved and fictive temperatures were calculated. These temperatures depended on cooling rate similar to Bartenev equation. Activation energies calculated hereof were around 38 kJ?mol⁻¹ larger than those inserted into the kinetic equation. The experimentally determined activation energy is 565 kJ?mol⁻¹, a value much larger than the activation energies of diffusion of the polyvalent elements. The rate determining step in the case of the Cr³⁺/Cr⁶⁺/Mn²⁺/Mn³⁺ system is the electron transfer reaction, because a notable structural rearrangement is necessary during the course of the electron transfer reaction (Cr³⁺ and Cr⁶⁺ occur in octahedral and tetrahedral coordination, respectively). The latter leads to a large inner reorganisation energy and to an activation energy similar to that of the viscous flow. In the case of the redox reaction between copper and arsenic, the activation energy is much smaller (210 kJ?mol⁻¹), because here the coordination numbers do not change during the course of the redox reaction.