Urbach absorption edge and disordering processes in As2S3 thin films

The temperature studies of transmission spectra for as-deposited and annealed amorphous As₂S₃ thin films are carried out. The optical absorption spectra in the range of their exponential behaviour are analysed, and the dispersion dependences of refractive index as well as their temperature variation are investigated. The Urbach behaviour of optical absorption edge is revealed, the Urbach absorption edge parameters are determined, and their temperature dependences are studied. The effect of different type of disordering on the optical absorption processes in As₂S₃ thin films is studied. A comparative analysis of Urbach absorption edge parameters of As₂S₃ bulk glasses and thin films is performed.     

Medium range order and optical properties of As2S3 glass

Low frequency Raman scattering and optical absorption edge were measured for As₂S₃ glasses quenched at temperature in the supercooling region of the glasses. It was found that both the Raman spectrum and the optical absorption edge shift to the lower energy side with the rise of the quenching temperature. The effects were interpreted in terms of the order of the arrangements of the layer-like clusters, which become more random as the quenching temperature goes higher.     

A photoelectric study on the interface between metallic silver and vitreous As2S3

The electrostatic potential at the AgAs₂S₃ interface was investigated. In the dark, cells of a structure, Ag/As₂S₃/Al behaved like and an electrochemical battery. When light fell onto the cells, short-circuit currents were observed, but their appearancesvaried much, depending on the excitation wavelength and the material of the illuminated electrode. At wavelengths longer than the absorption edge of As₂S₃ glass, photocurrents were characteristic of the polarization current and little influenced by the external field. A model for explaining these findings was proposed on an assumption of an interface reaation between silver and vitreous As₂S₃ in the dark. The interfacial reaction was supposed to accompany a charge separation leading to formation of a potential barrier at the interface.     

X-ray photoelectron spectroscopic studies on Se/As2S3 and Sb/As2S3 nanomultilayered film

Photoinduced diffusion in Se/As₂S₃ and Sb/As₂S₃ nanomultilayered thin films are studied by X-ray photoelectron spectroscopy (XPS). The XPS measurements show the atomic movements during photoinduced diffusion in Se/As₂S₃ and Sb/As₂S₃ nanomultilayered film. The analysis of experimental data describes the nature of light induced changes in different structural units.     

Glass formation, physico-chemical properties, and structure of glasses based on Ga2S3-GeS2-Sb2S3 system

We prepared sulfide glasses based on a Ga₂S₃-GeS₂-Sb₂S₃ system and investigated the compositional dependences of their physico-chemical properties and structure. Additivities were observed for density and refractive index; i.e., these properties were presented by the summation of the contribution from each component. With the increase of Sb₂S₃ content, the density, refractive index, and thermal expansion coefficient increased while the glass transition and softening temperatures decreased, and the short-wavelength absorption edge shifted to the longer wavelength side. These variations are expected from the incorporation of a heavy element (Sb) into the glasses. On the other hand, the replacement of GeS₂ by Ga₂S₃ increased the density and refractive index, and shifted the short-wavelength absorption edge to the longer wavelength side. These variations were explained by the increase of the number densities of the cations with the replacement and the formation of metal-metal bonds. The latter was confirmed from the Raman spectra. We also investigated the effects of Ag₂S incorporation on the optical properties. The incorporation of Ag₂S increased the density and refractive index whereas the position of the short-wavelength absorption edge varied little. These results show the possibility of fabricating an optical waveguide by Ag incorporation into the glasses.     

On the Urbach rule in non-crystalline solids

A comparative analysis of temperature behavior of optical absorption edge is performed for non-crystalline materials where the Urbach behavior is observed (SiO₂), with deviations from the Urbach behavior (20PbO · 80SiO₂) and with a mixed behavior (As₂S₃). For glassy As₂S₃, the Urbach behavior of the absorption edge in a limited temperature range is explained from the point of view of two components of structural disordering - static and dynamic. A parallel red shift of the absorption edge in As₂S₃ and, consequently, the temperature-independent Urbach energy at T < 300 K, are related to the lack of medium-range order in the atomic arrangement in the presence of short-range order.     

Post-irradiation relaxation in vitreous arsenic/antimony trisulphides

Instability caused by high-energy γ-irradiation was studied in (As₂S₃)_1−x(Sb₂S₃)_x glasses (x = 0, 0.1, 0.2 and 0.3) using positron annihilation lifetime spectroscopy, the obtained results being treated within a two-state trapping model. The observed decrease in the positron trapping rate of the glasses tested just after irradiation was explained due to renovation of destroyed covalent chemical bonds. This process was governed by monomolecular relaxation kinetics agreed well with corresponding changes in fundamental optical absorption edge.     

Structure and properties of Ge2.5PSx glasses

Ge_2.5PS_x glasses were studied with a combination of Raman spectroscopy, nuclear magnetic resonance, and neutron diffraction. From these experiments the distribution of bonding configurations was determined, and used to explain the compositional dependence of the index of refraction and the glass transition temperature. On reducing the sulfur content of these glasses below the stoichiometric amount, the sulfur deficit is accommodated by the progressive loss of the non-bridging sulfur of SPS_3/2 groups, followed by the conversion of the resultant PS_3/2 groups into species such as P₄S₃ characterized by P-P bonding. The presence of metal-metal bonds involving germanium, found in samples with the lowest sulfur content, was found to be the most important structural feature in determining the optical response.     

Anomalous anisotropic deformations of As2S3 flakes induced by linearly-polarized bandgap illumination

Semi-free As₂S₃ flakes undergo visible-scale anisotropic deformations when exposed to linearly-polarized bandgap illumination. We investigate the behavior and also those in amorphous Se, GeS₂, AgAsS₂, and crystalline As₂S₃. These results suggest that the deformation occurs through photo-induced birefringence, photo-induced fluidity, and optical force.     

Structural study of (As2S3)0.6(GeS2)0.4 glass

(As₂S₃)_0.6(GeS₂)_0.4 glass in non-irradiated and γ-irradiated states has been studied by using high-energy synchrotron X-ray diffraction, extended X-ray absorption fine structure spectroscopy, and positron annihilation lifetime spectroscopy. The experimental results are explained by the local changes around As and Ge atoms upon irradiation. These changes are suggested to involve chemical bonds distortion, formation of defective bonds with wrong coordination, rotation of structural units and appearance of additional free volume in the glass network.     

Light and heat induced interdiffusion in Sb/As2S3 nano-multilayered film

The light and heat induced changes in the optical band gap of Sb/As₂S₃ nanomultilayered chalcogenide film has been studied. Even though the changes in optical bandgap are attributed to the light and heat induced interdiffusion, the diffusional intermixing between the layers is rather different with light and heat. The observed difference in the light and heat induced interdiffusion is due to unequal diffusion coefficients of light and heat predicted by thermal spike model.     

Stimulated interdiffusion and optical recording in Sb/As2S3 nanomultilayers

The role of the compositional modulation at nano-scale dimensions (2–10 nm) in the enhancement of optical recording parameters in nanomultilayers, which contain Sb as active, optical absorbing and diffusing layers and As₂S₃ as barrier (matrix) layers was investigated. Comparison was made with single homogeneous layers made of ternary (As₂S3)_xSb_1−x glasses and co-deposited from Sb and As₂S₃. It was shown that essential increase of the recording efficiency, sensitivity of the bleaching process, broadening of its spectral range occurs due to the stimulated interdiffusion of adjacent components in Sb/As₂S₃ nanomultilayers with optimized Sb layer thickness.     

The kinetics of photodissolution of Ag in amorphous As2S3 films

A new technique, measurement of the electrical resistance change of the Ag layer, is developed to study the kinetics of photodissolution of Ag in amorphous As₂S₃. It is shown that the photodissolution rate is proportional to the light intensity absorbed in the As₂S₃ at the As₂S₃Ag interface, but photoelectrons ejected from the Ag into the As₂S₃ also contribute. The process is shown to be two-stage. Firstly a critical “radiation damage” dose must be accumulated in the As₂S₃. Secondly, the Ag atom is photon-assisted across the As₂S₃Ag interface activation barrier.     

Effect of reversible photostructural change on the polarization of photoluminescence in chalcogenide glasses

Optical absorption edge in annealed As₂S₃ films shifts to lower energy after band-gap illumination. In these photodarkened films, polarization memory of photoluminescence was found to increase. In the case of illumination with linearly polarized light, anisotropy is induced in the absorption edge. The polarization memory was larger for larger shift of absorption edge. In contrast with this trend, the memory was smaller in As-rich films, the absorption edge of which was located at lower energy. It is considered that the optical anisotropy of the luminescence centers increases accompanying the reversible photostructural change.     

Optical properties of thin films of system (As2Se3)80−x(As2Te3)x(SnTe)20 prepared by PLD

Thin amorphous films from system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ were prepared by pulsed laser deposition (PLD) from their bulk glasses and their optical properties were studied by spectral ellipsometry. Spectral dependencies of refractive index, absorption and extinction coefficient and optical gap (1.41–1.66 eV for (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 20 resp. x = 0) were calculated from optical tansmittance, from ellipsometric data by Tauc method. High values of refractive index n₀ (2.49–2.60) and of non-linear χ⁽³⁾ coefficient of index of refraction (4.9–7.5 × 10⁻¹² esu for the glass (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 0 resp. x = 20) made studied thin films of system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ promising candidates for application in optics and optoelectronics.     

The electronic properties of glasses in the Cux(As0.4Se0.6)100−x system with x between 5 and 30

Data are presented on the dc conductivity, thermopower and optical absorption of glasses in the CuAs₂Se₃ system. The electronic properties of the alloys differ markedly from those of As₂Se₃, but variations in composition do not introduce significant changes in properties, until the atomic percent of copper is greater than 25. The results are interpreted in terms of small polaron transport.     

Plasma etching of As2S3 films for optical waveguides

Chalcogenide glasses are good candidate materials for ultra-fast non-linear optic devices. In this work, we present the photolithographic process and the plasma etching of arsenic tri-sulphide (As₂S₃) film. The films were deposited on thermally oxidized silicon substrates by ultra-fast pulsed laser deposition. To protect As₂S₃ film from photo-resist developer, thin resist layer ∼100-200 nm was remained on the UV exposed area by controlling resist development time. After removing the protective layer in oxygen plasma, As₂S₃ waveguides were patterned in inductively coupled plasma reactive ion etching (ICP-RIE) system using CF₄-O₂ gas mixture. We investigated the etch rate and the etch selectivity to photo-resist of As₂S₃ as a function of bias power, induction power, operating pressure, and gas flow rate ratio of CF₄ and O₂. The film is mainly etched by the chemical reaction with fluorine radicals. The content of oxygen in the plasma determines the etched sidewall profiles and nearly vertical profile was obtained at high oxygen content plasma.     

Local structure and vibrational spectra of vAs2O3

We discuss the atomic displacements of the optically active vibrational modes of vitreous (v-)As₂O₃ through comparisons of the infrared (ir) and Raman response with the corresponding spectra of the two crystalline polymorphs, claudetite, a layer crystal similar to orpiment, and arsenolite, a molecular crystal based on the As₄O₆ molecule. We conclude from these comparisons that the structure of the glass is composed of $\text{AsO}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ pyramidal units that are corner connected to form a continuous random network. The character of the strong ir and polarized Raman modes in the vitreous form, suggests that the interconnection of these pyramidal units cannot be described by a random distribution of dihedral angles, but rather has peaks at angles characteristic of the different ordering in two-dimensional macromolecular layer basis of claudetite, and the As₄O₆ molecule. The comparisons are extended to v-As₂S₃ and vAs₂Se₃ where we conclude the dihedral angle distributions characteristic of an As₄O₆-like local geometry are less prevalent.     

Durability of an As2S3 chalcogenide glass: Optical properties and dissolution kinetics

The durability of a As₂S₃ chalcogenide glass composition was studied in de-ionized water at different temperatures (60-90 °C) for different periods of time, up to 120 days. The evolutions of the chemical composition and the pH of the solutions as well as the optical transmission of bulk samples, in the 2-10 μm region, were measured as a function of corrosion time. Atomic force microscopy and optical microscopy were used to investigate the roughness of corroded surfaces and the evolution of surface defects. The water corrosion of As₂S₃ glass was found to follow a congruent dissolution mechanism, a possible glass-water reaction mechanism was proposed. The optical transmission of the glass was found to be affected by the corrosion. The optical loss increased from 4 to 21% with corrosion time, this variation was attributed to the texturation of the surface by the reaction of corrosion. Moreover, the experimental results show that high temperature value enhances the corrosion reaction: an activation energy of 103 ± 2 kJ/mol was computed from experimental measurements.