Structural transformation on Se0.8Te0.2 chalcogenide glass

Using X-ray diffraction and differential scanning calorimetry (DSC), the structure and the crystallization mechanism of Se_0.8Te_0.2 chalcogenide glass has been studied. The structure of the crystalline phase has been refined using the Rietveld technique. The crystal structure is hexagonal with lattice parameter a = 0.443 nm and c = 0.511 nm. The average crystallite size obtained using Scherrer equation is equal 16.2 nm, so it lies in the nano-range. From the radial distribution function, the short range order (SRO) of the amorphous phase has been discussed. The structure unit of the SRO is regular tetrahedron with (r₂/r₁) = 1.61. The Se_0.8Te_0.2 glassy sample obeys the chemical order network model, CONM. Some amorphous structural parameters have been deduced. The crystallization mechanism of the amorphous phase is one-dimensional growth. The calculated value of the glass transition activation energy (E_g) and the crystallization activation energy (E_c) are 159.8 ± 0.3 and 104.3 ± 0.51 kJ/mol, respectively.     

Crystallization process on amorphous GeTeSb samples near to eutectic point Ge15Te85

One of most important properties of some tellurium-based chalcogenide glasses is the optical and electrical switching between two states: the glass and the crystalline state. The understanding in these systems of the glass to crystal transition and its transformation kinetics is essential for their application in non-volatile memories. GeTeSb and GeTe amorphous samples of compositions close to the eutectic point Ge₁₅Te₈₅ were obtained by rapid solidification from the liquid state employing melt spinning technique. The glass forming ability of this system, for this cooling technique, is restricted to a small composition range nearby the binary eutectic. The crystallization kinetics of the samples was studied by means of differential scanning calorimetry (DSC) under both isothermal and continuous heating regimes. The quenched samples and the crystallization products have been characterized by X-ray diffraction with Cu(Kα) radiation. The crystallization temperature, activation energy, crystallization enthalpy and the dependence of these properties on concentration are reported. The crystallization study of Ge₁₅Te₈₅ glasses shows: a primary crystallization of Te superimposed with a secondary crystallization of GeTe. The addition of Sb (5 at.%) to the eutectic point Ge₁₅Te₈₅ modifies this behavior: the crystallization of Ge₁₃Sb₅Te₈₂ glasses consists on the crystallization of Te and Ge₂Sb₂Te_5. The crystallization of the ternary glasses was modeled.     

Thermal conductivity and specific heat of bulk amorphous chalcogenides Ge20Te80−xSex (x = 0,1,2,8)

Bulk amorphous chalcogenide samples of Ge₂₀Te_80−xSe_x (x = 0, 1, 2, 8) have been prepared using a melting-quench method, and characterized by the differential scanning calorimetry, X-ray powder diffraction, high-resolution transmission electron microscopy, specific heat and thermal conductivity measurements. The low temperature specific heat measurements identified some localized low-frequency oscillation modes (Einstein modes) in conjunction with a Debye-like behavior. It was found that with increasing Se concentration the characteristic Debye temperature did not change whereas the Einstein temperature slightly decreased. The lattice thermal conductivity of all Ge₂₀Te_80−xSe_x samples exhibited typical amorphous heat conduction behavior, which has been discussed in connection with the phonon mean free path and in the context of a phenomenological model of heat conduction for highly disordered system.     

Non-isothermal crystallization kinetics study on new amorphous Ga20Sb5S75 and Ga20Sb40S40 chalcogenide glasses

Bulk glasses of the system Ga₂₀Sb_xS_80−x (x = 5 and 40) were prepared for the first time by the known melt quenching technique. Non-isothermal differential scanning calorimetric (DSC) measurements of as-quenched Ga₂₀Sb_xS_80−x (x = 5 and 40) chalcogenide glasses reveal that the characteristic temperatures e.g. the glass transition temperature (T_g), the temperature corresponding to the maximum crystallization rate (T_p) recorded in the temperature range 400-650 K for x = 5 and 480-660 K for x = 40 are strongly dependent on heating rate and Sb content. Upon heating, these glasses show a single glass transition temperature (T_g) and double crystallization temperatures (T_p1 and T_p2) for x = 5 which overlapped and appear as a single crystallization peak (T_p) for x = 40. The activation energies of crystallization E_c were evaluated by three different methods. The crystallization data were examined in terms of recent analysis developed for non-isothermal conditions. The crystalline phases resulting from (DSC) have been identified using X-ray diffraction.     

Non-isothermal crystallization kinetics of La2CaB10O19 from glass

The non-isothermal crystallization kinetics of La₂CaB₁₀O₁₉ (LCB) from a La₂O₃-CaO-B₂O₃ glass was studied. Differential thermal analysis methods were performed on three glass powders to obtain the kinetic parameters of LCB crystallization mechanism. The activation energies for overall crystallization (E), obtained by the methods of Kissinger and Ozawa, were in the range of 479-569 kJ/mol. Multiple (five) analysis methods were used to estimate the Avrami exponent (n), which could consequently be reduced into the single value of n = 3.1 ± 0.3. The growth morphology index (m) of LCB was corroborated by microscopy (optical and electron) images, which revealed a three dimensional growth. Energy dispersive spectroscopy confirmed that LCB is the crystallizing phase from the glass by an interface controlled mechanism. The parameters of the Johnson-Mehl-Avrami kinetic model for the analysis of LCB crystallization from glass were found to be n = m = 3.     

Crystallization kinetics determination of Pb15Ge27Se58 chalcogenide glass by using the various heating rates (VHR) method

The kinetics of crystallization of Pb₁₅Ge₂₇Se₅₈ was studied by differential scanning calorimetry non-isothermally. Various experimental methods are currently employed for determining the kinetic parameters of crystallization in a glassy system. These parameters include the activation energy of crystallization E (kJ/mol), the kinetic exponent n and the frequency factor K_o (s⁻¹). Recently, a new method (VHR method) has been derived from Johnson-Mehl-Avrami (JMA) transformation rate equation to calculate - in sequence - the crystallization kinetic parameters of a glassy system. The VHR technique has been used to estimate the crystallization parameters of Pb₁₅Ge₂₇Se₅₈ chalcogenide glass under non-isothermal conditions. The average value of E, n and K_o are found equal to 181.74 ± 0.58 (kJ/mol), 1.085 ± 0.023 and (9.196 ± 0.716) × 10¹² (s⁻¹), respectively. The kinetic exponent, n ≈ 1 indicates a surface nucleation mechanism.     

Crystallization kinetics in Cu46Zr45Al7Y2 bulk metallic glass by differential scanning calorimetry (DSC)

Crystallization transformation kinetics in isothermal and non-isothermal (continuous heating) modes were investigated in Cu₄₆Zr₄₅Al₇Y₂ bulk metallic glass by differential scanning calorimetry (DSC). In isochronal heating process, activation energy for crystallization at different crystallized volume fraction is analyzed by Kissinger method. Average value for crystallization in Cu₄₆Zr₄₅Al₇Y₂ bulk metallic glass is 361 kJ/mol in isochronal process. Isothermal transformation kinetics was described by the Johnson-Mehl-Avrami (JMA) model. Avrami exponent n ranges from 2.4 to 2.8. The average value, around 2.5, indicates that crystallization mechanism is mainly three-dimensional diffusion-controlled. Activation energy is 484 kJ/mol in isothermal transformation for Cu₄₆Zr₄₅Al₇Y₂ bulk metallic glass. These different results were discussed using kinetic models. In addition, average activation energy of Cu₄₆Zr₄₅Al₇Y₂ bulk metallic glass calculated using Arrhenius equation is larger than the value calculated by the Kissinger method in non-isothermal conditions. The reason lies in the nucleation determinant in the non-isothermal mode, since crystallization begins at low temperature. Moreover, both nucleation and growth are involved with the same significance during isothermal crystallization. Therefore, the energy barrier in isothermal annealing mode is higher than that of isochronal conditions.     

All-chalcogenide middle infrared dielectric reflector and filter

We have fabricated a dielectric reflector and a passband filter, both with first order photonic bandgaps in the middle-infrared region around λ = 4 μm. The devices were made from alternating amorphous Ge₂₅S₇₅ and Ge₁₅Te₈₅ chalcogenide films with high transparency in the middle infrared region stacked in multilayers. Due to high thickness accuracy and periodicity of prepared multilayers we also observed second order photonic bandgaps at λ ~ 1.4 μm. The experimental data were in good agreement with theoretical predictions. The work focused on investigation of compositional homogeneity, surface roughness, thermal and optical properties of individual amorphous Ge₂₅S₇₅ and Ge₁₅Te₈₅ films. We confirmed chalcogenide materials as being of suitable choice for designing middle-infrared quarter wave stack devices. FT-IR reflectance spectra confirmed occurrence of 99.4% stopband near λ = 4 μm for fabricated reflector and narrow ~ 50% passband of prepared filter near λ = 3.934 μm.     

Effects of Nb2O5 Replacement by Er2O3 on elastic and structural properties of 75TeO2-(10 − x)Nb2O5-15ZnO-(x)Er2O3 glass

Tellurite 75TeO₂-(10 − x)Nb₂O₅-15ZnO-(x)Er₂O₃; (x = 0.0-2.5 mol%) glass system with concurrent reduction of Nb₂O₅ and Er₂O₃ addition have been prepared by melt-quenching method. Elastic properties together with structural properties of the glasses were investigated by measuring both longitudinal and shear velocities using the pulse-echo-overlap technique at 5 MHz and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Shear velocity, shear modulus, Young's modulus and Debye temperature were observed to initially decrease at x = 0.5 mol% but remained constant between x = 1.0 mol% to x = 2.0 mol%, before increasing back with Er₂O₃ addition at x = 2.5 mol%. The initial drop in shear velocity and related elastic moduli observed at x = 0.5 mol% were suggested to be due to weakening of glass network rigidity as a result of increase in non-bridging oxygen (NBO) ions as a consequence of Nb₂O₅ reduction. The near constant values of shear velocity, elastic moduli, Debye temperature, hardness and Poisson's ratio between x = 0.5 mol% to x = 2.0 mol% were suggested to be due to competition between bridging oxygen (BO) and NBO ions in the glass network as Er₂O₃ gradually compensated for Nb₂O₅. Further addition of Er₂O₃ (x > 2.0 mol%) seems to further reduce NBO leading to improved rigidity of the glass network causing a large increase of ultrasonic velocity (v_L and v_S) and related elastic moduli at x = 2.5 mol%. FTIR analysis on NbO₆ octahedral, TeO₄ trigonal bipyramid (tbp) and TeO₃ trigonal pyramid (tp) absorption peaks confirmed the initial formation of NBO ions at x = 0.5 mol% followed by NBO/BO competition at x = 0.5-2.0 mol%. Appearance of ZnO₄ tetrahedra and increase in intensity of TeO₄ tbp absorption peaks at x = 2.0 mol% and x = 2.5 mol% indicate increase in formation of BO.     

Structure, electrical, optical and thermal properties of Ge4Sb4Tex (x = 8, 9 and 10) thin films

The crystalline samples of Ge₄Sb₄Te₁₀, Ge₄Sb₄Te₉, and Ge₄Sb₄Te₈ were prepared and their amorphous semiconducting thin films obtained by flash evaporation. Their sheet resistance decreased slowly with temperature up to 147–160 °C with activation energy of electrical conductivity ΔE = 0.40–0.44 eV. Above these temperatures, the sheet resistance drops abruptly by several orders due to crystallization. The drop of resistivity proceeds in two steps. Two steps of phase change were also found on curves of DSC and on the temperature dependence of index of refraction. It pays for slow heating rates, crystallization induced by short (≈30 ns) laser pulses proceeds probably in one step only for all studied samples (as it follows from X-ray diffraction), not only for Ge₂Sb₂Te₅ in which a single phase formation was confirmed. The crystallization temperatures are increasing slightly with decreasing Te content in the series Ge₄Sb₄Te₁₀–Ge₄Sb₄Te₉–Ge₄Sb₄Te₈ from 147 to 160 °C. The X-ray diffractograms revealed that in laser crystallized samples can be found only cubic modification of Ge₂Sb₂Te₅ type (a = 0.6 nm), while the samples annealed (230 °C, 2 h) or annealed after the crystallization with laser pulse, contain also small amounts of hexagonal phase.     

A sharp thermally reversing window in As45Te55−xIx chalcohalide glasses revealed by alternating differential scanning calorimetry and photo thermal deflection studies

The composition dependence of different thermal parameters such as glass transition temperature, non-reversing enthalpy, thermal diffusivity etc., of bulk As₄₅Te_55−xI_x chalcohalide glasses (3 ? x ? 10), has been evaluated using the temperature modulated Alternating Differential Scanning Calorimetry (ADSC) and Photo Thermal Deflection (PTD) studies. It is found that there is not much variation in the glass transition temperature of As₄₅Te_55−xI_x glasses, even though there is a wide variation in the average coordination number . This observation has been understood on the basis that the variation in glass transition temperature of network glasses is dictated by the variation in average bond energy rather than . Further, it is found that both the non-reversing enthalpy (ΔH_nr) and the thermal diffusivity (α) exhibit a sharp minimum at a composition x = 6. A broad hump is also seen in glass transition and crystallization temperatures in the composition range 5 ? x ? 7. The results obtained clearly indicate a sharp thermally reversing window in As₄₅Te_55−xI_x chalcohalide glasses around the composition x = 6.     

Far-infrared transmission and bonding arrangement in Ge10Se90−xTex semiconducting glassy alloys

The far-infrared spectra of Ge₁₀Se_90−xTe_x where x = 0, 10, 20, 30, 40, 50 glassy alloys were measured in the wavenumber region 50-650 cm⁻¹ at room temperature. The results were explained in terms of the vibrations of the isolated molecular units. The addition of Te in Ge₁₀Se₉₀ has shown the appearance of GeTe₂ and GeTe₄ molecular units and vibrations of Se-Te bond as Se_8−xTe_x mixed rings. The assignment of various absorption bands has been made on the basis of absorption spectra of pure Se, binary Ge-Se, Ge-Te, Se-Te and ternary Ge-Se-Te glassy alloys. The far-infrared transmission spectrum has been found to shift a little towards lower wavenumber side with the addition of Te content to Ge₁₀Se₉₀. The addition of Te to Ge-Se system replacing Se has found to reduce the Se-Se bonds and Ge-Se bonds and leads to the formation of Se-Te, Ge-Te and Te-Te bonds.     

Structure and properties of Ni60(Nb100−xTax)34Sn6 bulk metallic glass alloys

Refractory bulk metallic glasses and bulk metallic glass composites are formed in quaternary Ni-Nb-Ta-Sn alloy system. Alloys of composition Ni₆₀(Nb_100−xTa_x)₃₄Sn₆ (x = 20, 40, 60, 80) alloys were prepared by injection-casting the molten alloys into copper molds. Glassy alloys are formed in the thickness of half mm strips. With thicker strips (e.g., 1 mm), Nb₂O₅ and Ni₃Sn phases and the amorphous phase form an in situ composite. Glass transition temperatures, crystallization temperatures, and ΔT_x, defined as T_x1 − T_g (T_x1: first crystallization temperature, T_g: glass transition temperature) of the alloys increase dramatically with increasing Ta contents. These refractory bulk amorphous alloys exhibit high Young’s modulus (155-170 GPa), shear modulus (56-63 GPa), and estimated yield strength (3-3.6 GPa).     

Devitrification behavior and structure of Li2O-B2O3-Al2O3 composite gels from metal alkoxides

(30 − x/2)Li₂O·(70 − x/2)B₂O₃·xAl₂O₃(x = 0, 5 and 10) composite gels have been fabricated by the sol-gel method. LiOCH₃, B(OC₄H₉)₃, and Al(OC₄H₉)₃ were used as precursor for Li₂O, B₂O₃, and Al₂O₃, respectively. B(OC₄H₉)₃ and Al(OC₄H₉)₃ were hydrolyzed separately and then mixed. The crystallization behavior and structure of the gels upon thermal treatment temperatures between 150 and 550 °C are characterized on the basis of SEM, XRD and IR analyses. Xerogel with x = 0 exhibits non-crystal features, whereas crystalline phases are found in the xerogels with x = 5 and 10. The crystalline phases are not found with increasing heat treatment temperatures from 150 to 450 °C, but crystalline phases appear present at 550 °C. The xerogel with x = 0, subject to thermal treatment below 450 °C, is found to be still amorphous, and a 550 °C heat treatment leads its structure changing from glassy to crystalline.     

Influence of outphase Cu50Ti50 amorphous alloy addition on microstructural evolution of mechanically alloyed Zr66.7Ni33.3 amorphous alloy

The influence of outphase Cu₅₀Ti₅₀ amorphous alloy addition on microstructural evolution of Zr_66.7Ni_33.3 amorphous alloy has been investigated using a mechanical alloying method. It has been found that the milling induced microstructural evolution is related to the change of peak positions of the first maximum on X-ray diffraction patterns of the as-obtained amorphous alloys. With increasing milling time, the 3 wt.% Cu₅₀Ti₅₀ addition can give rise to the cyclic amorphization transformation of the as-milled alloy. The mechanical stability of the mixing amorphous phase can be greatly enhanced with increasing Cu₅₀Ti₅₀ addition up to 10 wt.%. Moreover, the addition of outphase Cu₅₀Ti₅₀ amorphous alloy not only increases the onset crystallization temperature of Zr_66.7Ni_33.3 amorphous alloy but also alters its crystallization mode. The effect of outphase amorphous addition on the mechanical stability of the Zr_66.7Ni_33.3 amorphous phase has been discussed based upon the bond order theory.     

Crystallization kinetics of Fe73.5−xMnxCu1Nb3Si13.5B9 (x = 0, 1, 3, 5, 7) amorphous alloys

In this study, we have investigated the effect of substituting Mn for Fe on the crystallization kinetics of amorphous Fe_73.5−xMn_xCu₁Nb₃Si_13.5B₉ (x = 1, 3, 5, 7) alloys. The samples were annealed at 550 °C and 600 °C for 1 h under an argon atmosphere. The X-ray diffraction analyses showed only a crystalline peak belonging to the α-Fe(Si) phase, with the grain size ranging from 12.2 nm for x = 0 to 16.7 nm for x = 7. The activation energies of the alloys were calculated using Kissinger, Ozawa and Augis-Bennett models based on differential thermal analysis data. The Avrami exponent n was calculated from the Johnson-Mehl-Avrami equation. The activation energy increased up to x = 3, then decreased with increasing Mn content. The values of the Avrami exponent showed that the crystallization is typical diffusion-controlled three-dimensional growth at a constant nucleation rate.     

Capacitance-voltage characteristics of In0.3Ge2Sb2Te5 thin films

The influence of indium doping on the capacitance variation with temperature and applied bias voltage of Ge₂Sb₂Te₅ is investigated. The capacitance-voltage (C-V) measurements of In_0.3Ge₂Sb₂Te₅ and Ge₂Sb₂Te₅ thin films were performed for a sweep of voltages from −20 to +20 V at different temperatures. The results show different capacitance behavior of In_0.3Ge₂Sb₂Te₅ and Ge₂Sb₂Te₅ films. As the temperature increases the capacitance of the indium-doped sample decreases and becomes negative. The negative capacitance effect might be attributed to a significant increase of the film’s conductivity due to temperature and applied bias voltage. The nonlinearity in the capacitance and conductivity could be related to the nucleation mechanism as the temperature becomes close to the amorphous-crystalline transition temperature.     

Optical properties of Cr ion in lithium metasilicate Li2O · SiO2 transparent glass-ceramics

The optical properties of Cr³⁺ ions in lithium metasilicate (Li₂O · SiO₂) transparent glass-ceramics were investigated. The main crystalline phase precipitated was the lithium metasilicate (Li₂O · SiO₂) crystal. The percent crystallinity and crystalline size were ranging 65-75% and 20-35 nm, respectively. The color changes drastically to deep pink from emerald green upon crystallization. New and strong absorption bands appeared and the absorption intensity increases by about 10 times that in glass. These new absorption bands are found to be derived from Cr³⁺ ions in octahedral sites in the lithium metasilicate crystal lattice. Cr³⁺ ions substitute for three Li⁺ ions and occupy the distorted octahedral site between single [SiO₄]_n chains of lithium metasilicate crystal. The ligand field parameters can be estimated: 10Dq = 13 088 cm⁻¹, B = 453 cm⁻¹, Dq/B = 2.89 and C = 2036 cm⁻¹. The near-infrared luminescence centered at 1250 nm was not detected in the deep pink glass-ceramics unlike emerald green glass.     

Thermal diffusivity measurements on As-Te-Ga glasses by photo-thermal deflection technique: Composition dependence and topological thresholds

The thermal diffusivity (α) of As₂₀Te_80−xGa_x glasses (7.5 ? x ? 18.5) has been measured using photo-thermal deflection (PTD) technique. It is found that the thermal diffusivity is comparatively lower for As₂₀Te_80−xGa_x glasses, which is consistent with the memory type of electrical switching exhibited by these samples. Further, the thermal diffusivity of As₂₀Te_80−xGa_x glasses is found to increase with the incorporation of gallium initially (for x ? 9), which is consistent with the metallicity of the additive. This increase in α results in a maximum at the composition x = 9; beyond x = 9, a decrease is seen in α leading to a minimum at the composition x = 15. The observed composition dependence of thermal diffusivity of As₂₀Te_80−xGa_x glasses has been found to be similar to that of Al₂₀As_xTe_100−x glasses, based on which it is proposed that As₂₀Te_80−xGa_x glasses exhibit an extended stiffness transition with compositions x = 9 and x = 15 being its onset and completion, respectively. Also, the composition x = 17.5 at which a second maximum is seen in the thermal diffusivity has been identified to be the chemical threshold (CT) of the As₂₀Te_80−xGa_x glassy system, as at CT, the glass is configurationally closest to the crystalline state and the scattering of the diffusing thermal waves is minimal for the chemically ordered phase.