Effect of temperature on the extraction of Pd by liquid tin from molten borosilicate glass containing simulated radwaste

Separation of Pd from borosilicate glass-melt containing simulated high level radioactive waste (Pd, Mo, Cs, Sr, Zr, Nd, Ni, Fe) using Sn as the solvent metal was studied on lab scale. The separation of Pd was studied using varying amounts of Sn, and the percentage of extraction of Pd and other elements was investigated by varying the process temperature and the starting material for Pd. The process temperature was observed to have a profound influence on the separation of Pd from the glass melt to the metallic tin phase. The % extraction of Pd was found to be less for the batches heat-treated at temperatures below 900 °C. The decrease in the % extraction was due to the entrainment of Pd in the glass phase for the samples heat-treated at low temperatures. The entrainment of Pd leads to the formation of Pd-rose like structures in the glass phase as observed by SEM and EDAX. Similarly, Mo, Fe and Na also formed separate phases inside glass matrix when the samples were heated below 900 °C. However, entrainment was not seen when the samples were heat-treated above 1050 °C in Ar. At 1200 °C, a recovery of about 99% of Pd was obtained. The formation of a PdSn₄ type intermetallic phase was noticed in tin metallic phase. The extraction behavior of Pd in borosilicate glass melt was also studied by using Pd(NO₃)₂ instead of Pd powder as staring material, and the results showed that the process temperature is the key determinant of the extraction behavior of Pd.     

DC electrical conductivity of semiconducting cobalt-phosphate glasses

The dc conductivity of semiconducting cobalt-phosphate glasses has been measured at temperatures ranging from 213 to 530 K. Four bulk samples of CoO-P₂O₅ glasses of different compositions were produced by melting dry mixtures of analytical reagent grades of CoO and P₂O₅ at temperatures between 1200-1250 °C for 2 h using a press-quenching method from glass melt. Samples were annealed at 400 °C for 1 h. The dc conductivity was found to be dependent on the CoO content in the glass. At temperatures from 213 to 444 K, however, both Mott's variable-range hopping (VRH) and the Greaves' intermediate range hopping models are found to be applicable. VRH at this range of temperatures is attributed to large values of the disorder energy of these glasses.     

Interfacial reactions between tellurite melts and silica during the production of microstructured optical devices

Interfacial reactions between silica glass and tellurite melts were studied under confined conditions in the temperature regime of 400-700 °C, applying two different sampling techniques: isothermal heat-treatment of a several micrometer thick tellurite film, confined in a silica/tellurite/silica sandwich, and capillary filling of tellurite melts into silica microcapillaries. The sandwich technique provides detailed ex situ insights on the interface chemistry, microstructure and diffusion after given treatment times and temperatures. Data on dynamic viscosity, surface tension, wetting behaviour and eventual scaling effects was obtained from the capillary filling technique. For temperatures > 500 °C, silica is completely wet by the considered tellurite melts. At T > 600 °C and for a treatment time of 20 min or longer, cationic diffusion of Na⁺ and Te⁴⁺ into the silica substrate occurs to a depth of several micrometers. At the same time, the tellurite melt attacks the silica surface, leading to the formation of a stationary silica-tellurite reaction layer and silica dissolution. Dissolved silica was observed to re-precipitate from the tellurite melt by liquid-liquid phase separation. In the early reaction stages, as a result of alkali diffusion into the silica substrate, β-quartz crystallizes at the interface (what can be avoided by using alkali-free filling glasses). Obtained data set the boundary conditions for the generation of tellurite-silica all-solid fiber waveguides by melt infiltration of silica photonic crystal fibers or microcapillaries.     

Redox behavior of platinum-group metals in nuclear glass

This study highlights the role of two platinum-group metals, ruthenium and palladium, in the redox equilibria of nuclear waste containment glass. Electrochemical measurements in simplified R7/T7 glass melts were used to develop a thermodynamic model of ruthenium redox equilibrium. The oxygen fugacity at equilibrium, corresponding to the coexistence of ruthenium oxide and ruthenium metal dispersed in the molten glass, was measured at different ratios at temperatures ranging from 1000 °C to 1200 °C. Experiments were carried out on glass with and without Pd, revealing the combined role of palladium and tellurium on redox equilibria in the glass. The formation of palladium-tellurium alloys in nuclear glass was observed to result in oxidation of the elements dissolved in the melt.     

Control of the thermal properties of slow bioresorbable glasses by boron addition

This work studied the properties of glasses with the molar composition 63.8SiO₂-(11.6-x)Na₂O-(0.7 + x)B₂O₃-19.2CaO-3MgO-1.5Al₂O₃-0.2P₂O_5, in which x = 0, 1, 2, 3. These glasses are of interest for the development of slowly dissolving fibers to be incorporated in composites for medical applications. The thermal properties were recorded using hot stage microscopy, differential thermal analysis, and heat treatments in the range of 800°-1000 °C. The glass crystallization behavior was determined based on calculated values of the activation energy of crystallization and the Johnson-Mehl-Avrami exponent. The structural units in the glass network were identified using infrared spectroscopy. Finally, in vitro dissolution was tested in SBF solution.The addition of B₂O₃ increased the glass transition temperature and reduced the working temperature. When heat treated at 900 °C, the glass with the smallest amount of B₂O₃ formed two crystalline phases: magnesium silicate MgSiO₃ and wollastonite CaSiO₃. In the other compositions, only CaSiO₃ was observed after heat treatment at 950 °C. All the glasses crystallized preferentially from the surface. Changes in the liquidus and crystallization temperatures were related to changes in the glass structure. The formation of [BO₃] units led to glasses with improved resistance to crystallization and decreased liquidus temperature. In the glasses with 2.7 and 3.7 mol% B₂O₃, [BO₃] units were transformed into [BO₄] units. The formation of [BO₄] led to an increase in fragility and a decrease in resistance to crystallization. All the glasses dissolved slowly in simulated body fluid.     

Hydrogen formation observed during high pressure treatment of silica glass

Silica glass treated at high pressures and temperatures (1-3 GPa, 1100-1250 °C) in a solid-media pressure apparatus incorporated observable quantities of hydroxyl and hydride. The FTIR absorbance signals for these species appeared only when the glass sample was pressurized in the presence of water together with graphite at a high temperature, and the hydroxyl signal disappeared completely when the glass was heat-treated at 1000 °C in air for 1 h. These results indicate that hydrogen diffused into and reacted with the silica glass during the high pressure-temperature treatment. Reduction of H₂O by graphite at high pressure/temperature conditions is the probable source of hydrogen.     

Synthesis and characterization of potassium, rubidium, and cesium thiogermanate glasses

Glass-forming regions were investigated for the binary xM₂S + (1 − x)GeS₂ (M=K, Rb, Cs) systems. Glasses were prepared from 0?x?0.20 mole fraction alkali sulfide using a novel preparation route involving the decomposition of the alkali hydrosulfides in situ. At higher alkali concentrations near x=0.33, the glass-forming regions are limited by the readily formed adamantane-like M₄Ge₄S₁₀ crystals. Structural characterization of the glasses and polycrystals for x?0.33 were performed using Raman scattering and IR absorption. Terminal Ge-S⁻ vibrational modes, observed between 473 and 479 cm⁻¹, increased in intensity and decreased in frequency with increasing alkali modifier content. Glass transition temperatures decreased with increasing alkali modifier, ranging from 250 to 215 °C. Corresponding crystallization onset temperatures were between 340 and 385 °C. DC conductivity values of the glasses ranged from 10⁻¹⁰ to 10⁻⁷ (Ω cm)⁻¹ with activation energies between 0.54 and 0.93 eV for the temperature range of ∼100-250 °C. Higher ionic conductivities were observed with increasing alkali concentration and decreasing alkali radii. Additionally, an increase in the activation energy was observed above the glass transition temperature.     

Conversion of batch to molten glass, I: Volume expansion

Batches designed to simulate nuclear high-level waste glass were compressed into pellets that were heated at 5 K/min and photographed. Three types of batches were prepared, each with different amounts of nitrates and carbonates. The all-nitrate batches were prepared with varying amounts of sucrose. The mixed nitrate-carbonate batches were prepared with silica particles ranging in size from 5 to 195 μm. One batch containing only carbonates was also tested. Sucrose addition had little effect on expansion, while the size of silica was very influential. Sucrose addition reduced primary foam for batches containing 5-μm silica, but had no effect on batches containing larger particles. Excessive amounts of sucrose increased secondary foam. The 5-μm grains had the strongest effect, causing both primary and secondary foam to be generated, whereas only secondary foam was produced in batches with grains of 45 μm and larger. We suggest that the viscosity of the melt and the amount of gas evolved are the main influences on foam production. As more gas is produced in the melt and as the glass becomes less viscous, gas bubbles coalesce into larger cavities until the glass can no longer contain the bubbles and they burst, causing the foam to collapse.     

Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis

This study investigated the effect of the substrate temperature on the structural, optical, morphological, and electrical properties of undoped SnO₂ films prepared by a spray deposition method. The films were deposited at various substrate temperatures ranging from 300-500 °C in steps of 50 °C and characterized by different optical and structural techniques. X-ray diffraction studies showed that the crystallite size and preferential growth directions of the films were dependent on the substrate temperature. These studies also indicated that the films were amorphous at 300 °C and polycrystalline at the other substrate temperatures used. Infrared and visible spectroscopic studies revealed that a strong vibration band, characteristic of the SnO₂ stretching mode, was present around 630 cm⁻¹ and that the optical transmittance in the visible region varied over the range 75-95% with substrate temperature, respectively. The films deposited at 400 °C exhibited the highest electrical conductivity property.     

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E₂ (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.     

Investigation on the crystal growth process of spherical Si single crystals by melting

Spherical Si single crystals with a diameter of approximately 1 mm were grown by melting for solar cell applications. The start sources were spherical Si multicrystals fabricated by a dropping method, which had various irregular shapes. Spherical Si multicrystals were melted into droplets and recrystallized on a quartz plate sample holder that was coated with Si₃N₄. It was found that a surface coating of SiO₂ layer on the start sources and oxygen atmosphere during melting and recrystallization were essential to achieve almost perfect spherical shape. Defect-free single crystalline spherical Si could be obtained at recrystallization temperature ranging from 1400 to 1330 °C, corresponding to an undercooling ranging from 14 to 84 °C, with a yield of nearly 100%. At recrystallization temperatures higher than 1380 °C, the recrystallized spherical Si crystals were almost perfect spheres, whereas small protuberances were formed when the recrystallization temperature was lower than 1360 °C. It was also found that that melting at a temperature close to the melting point of Si (at ~1414 °C), a slow cooling rate of ~1 °C/min before recrystallization and relatively fast cooling rate of ~20 °C/min after recrystallization were important for achieving high carrier lifetime. The average carrier lifetime was greatly improved from lower than 2.5 μs of start sources up to ~7.5 μs by melting at optimized conditions. The influences of residual oxygen on the carrier lifetime of recrystallized spherical Si are discussed based on the measurement results with Fourier transform infrared spectrometer.     

Development and characterizations of BaO-CaO-Al2O3-SiO2 glass-ceramic sealants for intermediate temperature solid oxide fuel cell application

Several compositions based on BaO-CaO-Al₂O₃-SiO₂ (BCAS) glass system have been studied in this investigation to see their applicability as sealant for solid oxide fuel cell (SOFC). The glasses as well as the corresponding glass-ceramics have been systematically characterized by differential thermal analysis, dilatometry, X-ray diffractometry, electron microscopy and impedance analysis to examine their suitability as sealant. While the glass transition temperature (T_g) determined from DTA are within 600-665 °C, the coefficient of thermal expansion (CTE) can be tailored between 9.5 and 13.0 × 10⁻⁶ K⁻¹. These glasses are found to be well adhered with metallic interconnects, such as commercial ferritic steel (Crofer22APU), at an optimum sealing temperature of 850 °C. The shrinkage behavior of the developed glasses in their pellet form has also been investigated. The resistivities of the glass-ceramics, as obtained from impedance analysis, are found to be within 10⁴-10⁶ Ω cm at 800 °C. Under sandwiched condition between two metals, some of the developed compositions are found to maintain this high resistivity even after 100 h of operation. One of the glass compositions has shown a low leak-rate of the order of ∼10⁻⁷ Pa m² s⁻¹.     

Influence of high temperature deformation on the fracture behavior of a bulk Zr-based metallic glass

Nanocrystalline/amorphous matrix composites obtained by isothermal compression at high temperatures and low strain rates were characterized using transmission electron microscopy. To study the influence of high temperature deformation on the fracture behavior and room temperature plasticity, compression tests with a constant strain rate of 1 × 10⁻⁴ s⁻¹ were applied to the deformed samples. Fracture features of as-cast alloy and deformed samples were analyzed using scanning electron microscopy. Compared with the as-cast alloy, the room temperature plasticity of deformed sample is not destroyed both in the range of 370-395 °C at 1 × 10⁻³ s⁻¹ and at 395 °C in 1 × 10⁻² to 1 × 10⁻³ s⁻¹, and deteriorated at higher temperatures and lower strain rates. Corresponding to the TEM images, the homogenously dispersed nanocrystals with small size contribute to the compressive plasticity, and the aggregated large nanoparticles destroy the plasticity of the sample after high temperature deformation.     

Durability of an As2S3 chalcogenide glass: Optical properties and dissolution kinetics

The durability of a As₂S₃ chalcogenide glass composition was studied in de-ionized water at different temperatures (60-90 °C) for different periods of time, up to 120 days. The evolutions of the chemical composition and the pH of the solutions as well as the optical transmission of bulk samples, in the 2-10 μm region, were measured as a function of corrosion time. Atomic force microscopy and optical microscopy were used to investigate the roughness of corroded surfaces and the evolution of surface defects. The water corrosion of As₂S₃ glass was found to follow a congruent dissolution mechanism, a possible glass-water reaction mechanism was proposed. The optical transmission of the glass was found to be affected by the corrosion. The optical loss increased from 4 to 21% with corrosion time, this variation was attributed to the texturation of the surface by the reaction of corrosion. Moreover, the experimental results show that high temperature value enhances the corrosion reaction: an activation energy of 103 ± 2 kJ/mol was computed from experimental measurements.     

Sol-gel synthesis of porous and dense silica microspheres

An acidic silica sol (35 ± 2 wt% equivalent SiO₂) having a gelling time of 9-10 min has been used as an aqueous phase for obtaining a w/o emulsion in CCl₄ as oil phase in presence of a surfactant, Tween 80. The silica sol was allowed to form gel at room temperature via polycondensation among the -Si-OH groups forming the porous silica gel microspheres. The surface area of the microspheres heated at 500°, 700° and 900 °C was found to be 227 m²/g, 167 m²/g and 81 m²/g indicating the gradual densification. The decreased surface area and unchanged -Si-O-Si- asymmetric stretching vibration at 1084 cm⁻¹ up to 700 °C probably indicate the formation of extensive cross-linked gel structure in the microsphere. The appearance of the -Si-O-Si- asymmetric stretching vibration at 1104 cm⁻¹ and the absence of porosity while heating at 1000 °C indicate the formation of dense silica glass microspheres.     

Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy

We report the deposition of thin titanium dioxide films on Si(1 0 0) and silica glass at low temperatures between 200 and 350 °C by a technique of ultraviolet-assisted injection liquid source chemical vapor deposition (UVILS-CVD) with 222 nm radiation. The composition and optical properties of the films deposited have been studied using a variety of standard characterisation methods. A strong absorption peak around 438 cm⁻¹, corresponding to Ti-O stretching vibration, was observed by Fourier transform infrared spectroscopy for different deposition temperatures. Nanostructured films on Si wafers were observed by atomic force microscopy while X-ray diffraction results showed that crystalline TiO₂ layers could be formed at deposition temperatures as low as 210 °C. The deposition kinetics and influence of the substrate temperature on the film are discussed. The activation energy for this photo-CVD process at temperatures between 200 and 350 °C was found to be 0.435 eV. This is much lower than the value (E_a=5.64 eV) obtained by conventional thermal CVD. The thicknesses of the films grown, from several nanometers to micrometers can be accurately controlled by changing the number of drops introduced by the injection liquid source. Under optimum deposition conditions, refractive index values as high as 2.5 and optical transmittance of between 85% and 90% in the visible region of the spectrum can be obtained.     

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane,silane and trisilane

Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature (<700 °C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600–650 and 500 °C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate (>5 Å/min). Trisilane permits the growth of Si at lower temperatures below 350 °C due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 °C are defective, irrespective of the carrier gas, pressure and precursor flow used.     

Polymorphic forms of o-benzylphenol and slow molecular motions in the amorphous state

The slow molecular motions in o-benzylphenol were studied by thermally stimulated depolarization currents (TSDC). No dipolar reorientational motions were found in the crystal, in the temperature region from −165 °C up to the melting temperature. Oppositely, a strong α-relaxation was detected in the amorphous solid state, but no local (secondary) relaxations were observed. The glass transition relaxation was characterized by TSDC, by conventional differential scanning calorimetry (DSC) and by modulated temperature differential scanning calorimetry (MTDSC). The fragility index of this glass forming system was determined based on data from the different techniques. The obtained values were m = 61 (DSC), m = 83 (MTDSC), and m = 65 (TSDC). Conventional DSC was used to identify the polymorphs of o-benzylphenol and their most favorable formation conditions. Two metastable polymorphs were observed, with melting temperatures near 15 and 21 °C.     

Extrusion of chalcogenide glass preforms and drawing to multimode optical fibers

We report on viscosity of a Ge₁₇As₁₈Se₆₅ glass over the temperature range of 280-420 °C and the successful co-extrusion and fiber-drawing of two chalcogenide glass boules to form a core/clad. pair. The co-extrusion produces a preform with optimum diameter stability and core/clad. glass ratio, and minimum defects at the core/clad. interface in the middle 120-200 mm region of a 270 mm long preform. Core/clad. fiber is drawn successfully from the extruded preform. An optical loss of 1.7 dB m⁻¹ at 1666 cm⁻¹ (6.0 μm) and 6.7 dB m⁻¹ at 6649 cm⁻¹ (1.55 μm) is reported.     

Electrical and corrosion properties of the Ti5Si3 thin films coated on glass substrate by APCVD method

Ti₅Si₃ thin films were coated on glass substrate by atmospheric pressure chemical vapor deposition method at different temperatures. Electrical and corrosion properties of the thin films were investigated. The results show that the electrical resistivity of the thin films decreases initially with the increase in deposition temperature. However, it increases with the further increase of the temperature. The lowest electrical resistivity of 107 μΩ⋅cm is obtained at 710 °C. The least corrosion rates of the thin films at 95 °C of 0.10 nm/min and 0.13 nm/min in 1 N and 10 N acid solution and of 0.33 nm/min and 6.55 nm/min in 1 N and 10 N alkali solution, respectively, are obtained by weight-loss measurement method. The corrosion mechanisms of the thin films were also discussed in detail.