Structural investigations of magnesium silicate glasses by Si 2D Magic-Angle Flipping NMR

The two-dimensional Magic Angle Flipping Nuclear Magnetic Resonance (2D MAF NMR) experiment on ²⁹Si nuclei is used to determine the distribution of Q⁽ⁿ⁾ sites in two ²⁹Si-enriched magnesium silicate glasses with compositions 2MgO·SiO₂ and MgO·SiO₂. A significant degree of polymerization is observed in the 2MgO·SiO₂ glass, supporting previous studies using Raman and ²⁹Si NMR spectroscopy. Relative abundances of 0.629 ± 0.001 for Q⁽⁰⁾ and 0.371 ± 0.001 for Q⁽¹⁾ were obtained from spectral fits of the 2D MAF spectrum of the 2MgO·SiO₂ glass. Mole fractions for the free oxygen anion and each Q⁽ⁿ⁾-species were calculated and used in a thermodynamic model of Q⁽ⁿ⁾ disproportionation to calculate an equilibrium constant of k₀ = 0.04 ± 0.02 in 2MgO·SiO₂. In the MgO·SiO₂ glass relative abundance of 0.014 ± 0.001 for Q⁽⁰⁾, 0.191 ± 0.003 for Q⁽¹⁾, 0.530 ± 0.004 for Q⁽²⁾, 0.252 ± 0.003 for Q⁽³⁾, and 0.014 ± 0.001 for Q⁽⁴⁾ were measured. The mole fractions for the free oxygen anion and each Q⁽ⁿ⁾-species in MgO·SiO₂ were used to calculate corresponding disproportionation equilibrium constants of k₁ = 0.19 ± 0.02, k₂ = 0.174 ± 0.009, and k₃ = 0.11 ± 0.01. A comparison of k₃ values from previous MAF studies of various alkali and alkaline earth silicate glasses indicate an exponential increase in k₃ with the increasing modifying cation potential. Using the van't Hoff relation, we show that differences in both thermal history and modifier cation potential contribute to this spread in k₃ values. Nuclear shielding tensor anisotropy, ζ, and asymmetry, η, values of ζ = 0.0 ppm and η = 0.0 for Q⁽⁰⁾ and ζ = 33.0 ± 0.1 ppm, and η = 0.4 ± 0.1 for Q⁽¹⁾ in 2MgO·SiO₂ glass were determined from its 2D MAF spectrum. These values were used in obtaining the remaining values of ζ = − 36.0 ± 0.5 ppm and η = 0.99 ± 0.01 for Q⁽²⁾, and ζ = − 27.5 ± 0.5 ppm and η = 0.45 ± 0.11 for Q⁽³⁾, ζ = 0.0 ppm and η = 0.0 for Q⁽⁴⁾ in the MgO·SiO₂ glass from its 2D MAF spectrum. The magnitude of ζ values observed are lower than those reported in previous MAF studies of alkali and alkaline earth silicate glasses containing different modifier cations, consistent with previously reported trends in ζ versus modifying cation potential.     

Sodium tracer diffusion in glasses of the type (Na2O)0.2(B2O3)y(SiO2)0.8 − y

Sodium tracer diffusion coefficients, D^?_Na, have been measured in sodium borosilicate glasses of the type (Na₂O)_0.2(B₂O₃)_y(SiO₂)_0.8−y as a function of temperature and the composition parameter y. At constant temperature, the tracer diffusion coefficient of sodium decreases as y increases. The activation enthalpy derived from sodium tracer diffusion data for temperatures up to about 350 °C increases about linearly with increasing values of y from about 70 to 100 kJ/mol. The pre-exponential factor of the sodium tracer diffusion coefficient as a function of y varies by about one order of magnitude and has a minimum at near y = 0.3.     

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

This work assesses the relative effectiveness of four techniques to reduce the defect density in heteroepitaxial nonpolar a-plane GaN films grown on r-plane sapphire by metalorganic vapour phase epitaxy (MOVPE). The defect reduction techniques studied were: 3D–2D growth, SiN_x interlayers, ScN interlayers and epitaxial lateral overgrowth (ELOG). Plan-view transmission electron microscopy (TEM) showed that the GaN layer grown in a 2D fashion had a dislocation and basal-plane stacking fault (BSF) density of (1.9±0.2)×10¹¹ cm⁻² and (1.1±0.9)×10⁶ cm⁻¹, respectively. The dislocation and BSF densities were reduced by all methods compared to this 2D-grown layer (used as a seed layer for the interlayer and ELOG methods). The greatest reduction was achieved in the (0 0 0 1) wing of the ELOG sample, where the dislocation density was <1×10⁶ cm⁻² and BSF density was (2.0±0.7)×10⁴ cm⁻¹. Of the in-situ techniques, SiN_x interlayers were most effective: the interlayer with the highest surface coverage that was studied reduced the BSF density to (4.0±0.2)×10⁵ cm⁻¹ and the dislocation density was lowered by over two orders of magnitude to (3.5±0.2)×10⁸ cm⁻².     

Thermodynamics of the Cu/Cu-redox equilibrium in soda-silicate and soda-lime-silicate melts

The thermodynamics of the redox equilibrium of Cu⁺/Cu²⁺ were determined by square-wave voltammetry in glass melts with the base mol% compositions x Na₂O · (100 − x) SiO₂ (x = 15, 20, 26 and 33) and (26 − x) Na₂O · x CaO · 74 SiO₂ (x = 0, 5, 10 and 15) doped with 1 mol% CuO in the temperature range from 850 to 1150 °C. All recorded voltammograms showed two maxima attributed to the reductions of Cu²⁺ to Cu⁺ and Cu⁺ to metallic copper. Both peaks are shifted to smaller potentials with decreasing temperature. With increasing melt basicity, the [Cu⁺]/[Cu²⁺]-ratio first increases, and remains constant for optical basicities >0.56. The effect of composition on the redox equilibrium is explained by the incorporation of both Cu⁺ and Cu²⁺ in octahedral coordination into the melt structure.     

The effect of composition on UV-vis-NIR spectra of iron doped glasses in the systems Na2O/MgO/SiO2 and Na2O/MgO/Al2O3/SiO2

Glasses with the compositions xNa₂O · 10MgO · (90 − x)SiO₂, 10Na₂O · xMgO · (90 − x)SiO₂, 5Na₂O · 15MgO · xAl₂O₃ · (80 − x)SiO₂, xNa₂O · 10MgO · 10Al₂O₃ · (80 − x)SiO₂, 10Na₂O · 10MgO · xAl₂O₃ · (80 − x)SiO₂, 10Na₂O · 5MgO · 10Al₂O₃ · (80 − x)SiO₂ were melted and studied using UV-vis-NIR spectroscopy in the wavenumber range from 5000 to 30 000 cm⁻¹. At [Al₂O₃] > [Na₂O], the UV-cut off is strongly shifted to smaller wavenumbers and the NIR peak at around 10 000 cm⁻¹ attributed to Fe²⁺ in sixfold coordination gets narrower. Furthermore, the intensity of the NIR peak at 5500 cm⁻¹ increases. This is explained by the incorporation of iron in the respective glass structures.     

Isochronal crystallization kinetics of Cu60Zr20Ti20 bulk metallic glass

Isochronal crystallization kinetics of Cu₆₀Zr₂₀Ti₂₀ bulk metallic glass has been investigated by differential scanning calorimetry. By means of the Kissinger, Ozawa, Kempen, Matusita and Gao methods, average effective activation energies for the first and second crystallization reactions in Cu₆₀Zr₂₀Ti₂₀ are calculated to be about 375 ± 9 and 312 ± 11 kJ mol⁻¹, respectively, which are smaller than the values deduced from isothermal experiments. Meanwhile, average Avrami exponents, 3.0 ± 0.1 and 3.4 ± 0.2, for two crystallization reactions in isochronal anneals, differ from the value about 2.0 in isothermal anneals. The nonidentity of the Avrami exponents and effective activation energies may be contributed to different crystallization mechanisms and the nature of non-isokinetic between isochronal and isothermal experiments. The values of frequency factor k₀ for the first and second crystallization reactions of Cu₆₀Zr₂₀Ti₂₀ are (1.7 ± 0.3) × 10²⁴ and (7.0 ± 0.8) × 10¹⁸ s⁻¹, respectively, and the large value of k₀ has been discussed in terms of the atomic configuration and interaction.     

Sodium tracer diffusion in glasses of the type (Na2O)0.2[(BO1.5)x(SiO2)1 − x]0.8

Sodium tracer diffusion coefficients, D_Na*, have been measured in sodium borosilicate glasses of the type (Na₂O)_0.2[(BO_1.5)_x(SiO₂)_1 − x]_0.8 as a function of temperature and the composition parameter x. In these glasses, which can alternatively also be described by using the formula Na₂O·(2B₂O₃)_x·(4SiO₂)_1 − x, one network former unit, SiO₂, is replaced by another one, BO_1.5, while keeping the sodium concentration constant. At constant temperature, the tracer diffusion coefficient of sodium as a function of x has a shallow minimum at about x = 0.7. At temperatures below about 310 °C the temperature dependences of the measured tracer diffusion coefficients are of Arrhenius-type; at higher temperatures one observes an increase in the temperature dependence with increasing temperature. The activation energy derived from sodium tracer diffusion data for temperatures up to about 310 °C increases about linearly with increasing x from about 70 to 80 kJ/mol. The pre-exponential factor as a function of x varies by about one order of magnitude and has a minimum at about x = 0.4. Values derived for the Haven-ratio are smaller than one and show a shallow minimum as a function of x at around x = 0.75. Furthermore, it was investigated whether there is a significant, directly measurable uptake of water during annealing in moist atmospheres and whether water taken up from moist atmospheres can influence the diffusion of sodium.     

Generation and annealing of defects in virgin fused silica (type III) upon ArF laser irradiation: Transmission measurements and kinetic model

The transmission of ArF laser pulses in virgin fused silica (type III) samples changes during N = 10⁶ pulses at an incoming fluence H_in = 5 mJ cm⁻² pulse⁻¹. The related absorption is determined by the pulse energy absorption coefficient α(N, H_in) using a modified Beer’s law, yielding initial values α_ini around 0.005 cm⁻¹, a maximum α_max ? 0.02 cm⁻¹ at N = 10³-10⁴ and stationary values 0.0045 cm⁻¹ ? α_end ? 0.0094 cm⁻¹ after N ≈ 6 × 10⁵ pulses. The development α(N, H_in = const.) is simulated by a rate equation model assuming a pulse number dependent E′ center density E′(N). E′(N) is determined by a dynamic equilibrium between E′ center generation and annealing. Generation occurs photolytically from the precursors ODC II and unstable SiH structures upon single photon absorption and from strained SiO bonds via two-photon excitation. Annealing in the dark periods between the laser pulses is dominated by the reaction of E′ with H₂ present in the SiO₂ network. The development α(N, H_in = const.) is observed for the very first sample irradiation only (virgin state). The values α_end are not accessible by simple spectrophotometer measurements.     

Thermal stability, spectra and laser properties of Yb: lead-zinc-telluride oxide glasses

A series of new glasses of 70TeO₂-(20 − x) ZnO-xPbO − 5La₂O₃-2.5K₂O-2.5Na₂O (mol%) doped with Yb³⁺ is presented. Thermal stability, spectra and laser properties of Yb³⁺ ions have been measured. It found that 70TeO₂-15PbO-5ZnO-5La₂O₃-2.5K₂O-2.5Na₂O composition glass had fine stability ((T_x−T_g)>190 °C), high-stimulated emission cross-section of 1.25 pm² for the ²F_5/2 → ²F_7/2 transition and existed measured fluorescence lifetime of 0.94 ms and the broad fluorescence effective linewidth of 72 nm. Evaluated from the good potential laser parameters, this system glass is excellent for short pulse generation in diode pumped lasers, short pulse generation tunable lasers, high-peak power and high-average power lasers.     

Crystallization kinetics determination of Pb15Ge27Se58 chalcogenide glass by using the various heating rates (VHR) method

The kinetics of crystallization of Pb₁₅Ge₂₇Se₅₈ was studied by differential scanning calorimetry non-isothermally. Various experimental methods are currently employed for determining the kinetic parameters of crystallization in a glassy system. These parameters include the activation energy of crystallization E (kJ/mol), the kinetic exponent n and the frequency factor K_o (s⁻¹). Recently, a new method (VHR method) has been derived from Johnson-Mehl-Avrami (JMA) transformation rate equation to calculate - in sequence - the crystallization kinetic parameters of a glassy system. The VHR technique has been used to estimate the crystallization parameters of Pb₁₅Ge₂₇Se₅₈ chalcogenide glass under non-isothermal conditions. The average value of E, n and K_o are found equal to 181.74 ± 0.58 (kJ/mol), 1.085 ± 0.023 and (9.196 ± 0.716) × 10¹² (s⁻¹), respectively. The kinetic exponent, n ≈ 1 indicates a surface nucleation mechanism.     

Effect of electron irradiation on Na-K silicate glass investigated using X-ray photoelectron spectroscopy and pattern recognition method

Alkali silicate glasses and melts play an important role in material science. Electron interaction with glasses is important for radioactive waste deposition, where electrons of various energies lead to irreversible changes. These changes are caused mainly by ionization and ballistic interaction of electrons with atoms, introducing structural disorder, changes in atomic composition and chemical state, accompanied by alkali ions diffusion. The Na-K silicate glass (5Na₂O · 10K₂O · 85SiO₂), pristine and electron irradiated (doses from 25 C m⁻² to 20 236 C m⁻²) are investigated using X-ray photoelectron spectroscopy (XPS) and the pattern recognition (PR) and fitting procedures. Changes of composition and chemical state of atoms dependent on electron dose are analyzed. At low doses (100-300 C m⁻²), decrease followed by increase of O and Si concentrations was observed. Surface segregation, probable desorption, and in-bulk diffusion of K and Na ions (doses of about 50 C m⁻² and 2000 C m⁻², respectively) were observed. This was accompanied by changes in the chemical state of K atom, where with an electron dose increasing content of elemental K form accompanied by decreasing potassium peroxide form were observed. No difference in chemical state of Si and O atoms was visible under electron irradiation dose to 20 236 C m⁻², within the sensitivity of the applied method.     

Viscosity, relaxation and elastic properties of photo-thermo-refractive glass

Viscometry, ultrasonic echography and mechanical spectroscopy were applied to explore the thermo-mechanical properties of a photo-thermo-refractive (PTR) glass. Newtonian shear viscosity and ultrasonic velocity were used to determine the Maxwell time of structural relaxation. Two fast relaxation modes are found in PTR glass below glass transition temperature, which are attributed to alkali and mixed cation mobility. Respective activation energies, E_γ = 72 ± 4 kJ mol⁻¹ and E_β = 117 ± 4 kJ mol⁻¹, are considerably lower than that of viscous flow at the glass transition E_α ≈ 465 kJ mol⁻¹ as quantified from mechanical spectroscopy. Decoupling ratios of E_γ/E_α = 0.155 and E_β/E_α = 0.255 are similar to those of sodium trisilicate glass but at considerably longer timescales. These observations imply that β- and γ-relaxations are delayed as local structural arrangements are more complex for the multi-component PTR glass.     

Preparation and optical properties of samarium doped sol-gel materials

Transparent crack-free glassy monoliths containing up to 0.2 Sm/Si are prepared at room temperature by sol-gel technique. The sol-gel preparation conditions are: acid catalyzed hydrolysis followed by basic catalyzed gelation and controlled drying. The prepared xerogels are characterized by X-ray diffraction, thermogravimetry with Fourier transforming infrared spectroscopy, scanning electron microscopy and optical spectroscopy. The values of the phenomenological Ω-intensity parameters of Sm(III) ions in the gels are (in 10⁻²⁰ cm²) Ω₂ = 76 ± 16.71, Ω₄ = 3.01 ± 0.21, Ω₆ = 2.99 ± 0.41. The oscillator strengths of the Sm(III) ions in the gels are calculated. The results show a linear concentration dependence of Sm(III) in UV/Vis absorption spectra and formation of a Sm(NO₃)₃ · 6H₂O complex at high samarium concentrations.     

Electrical characterisation of SrTiO3/Si interfaces

Deposition of SrTiO₃ (STO) thin films by ultra-high vacuum rf magnetron sputtering was performed in order to produce high-quality STO/p-Si (1 0 0) interfaces and STO insulator layers with high dielectric constants. The deposition temperatures were in the range from room temperature to 550 °C. Capacitance-voltage (C-V) and conductance-frequency measurements showed that the dielectric constant of the films ranges from 55 to 120. C-V measurements on Al/STO/p-Si structures clearly revealed the creation of metal-insulator-semiconductor diodes. The interface state densities (D_it) at the STO/p-Si interfaces were obtained from admittance spectroscopy measurements. The samples deposited at lower temperatures revealed values of D_it between 2×10¹¹ and 3.5×10¹² eV⁻¹ cm⁻² while the higher temperature deposited samples had a higher D_it ranging between 1×10¹¹ and 1×10¹³ eV⁻¹ cm⁻². The above results were also well correlated to X-ray diffraction measurements, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry.     

Universal critical-like scaling of dynamics in plastic crystals

Many theoretical models for the glassy dynamics have been proposed so far describing the changes in molecular dynamics along the extraordinary slowing down in the vitrification process of a disordered phase on cooling. Many of these theories share the concept of cooperative rearranging regions firstly proposed by Adam and Gibbs. Among them, the dynamical scaling model (DSM) is based on the random diffusion of free volume which creates random walking clusters formed by cooperatively rearranging entities.Within this framework a critical phenomenon relating a hidden phase transition at T_C (below T_g) implies the divergence of the relaxation time (τ) or viscosity (η) τ, η ∝ (T − T_C) ^− ? with a universal scaling exponent φ → 9. In this work we apply the DSM model to orientational glasses, obtained from the quenching of orientationally disordered phases (plastic crystals) via the application of the linearized derivative-based transformation of dielectric spectroscopy τ(T) data.     

Crystallization behavior of (GeS2)0.1(Sb2S3)0.9 glass

The crystal growth kinetics of antimony trisulfide in (GeS₂)_0.1(Sb₂S₃)_0.9 glass has been studied by microscopy and DSC. The linear crystal growth kinetics has been confirmed in the temperature range 492 ? T ? 515 K (E_G = 405 ± 7 kJ mol⁻¹). The applicability of standard growth models has been assessed. From the crystal growth rate corrected for viscosity plotted as a function of undercooling it has been found that the most probable mechanism is interface controlled 2D nucleated growth. The non-isothermal DSC data, corresponding to the bulk sample, can be described by the Johnson-Mehl-Avrami equation.     

Planar waveguides by ion exchange in Er-doped tellurite glass

This work reports the preparation of planar waveguides by Ag⁺ → Na⁺ ion exchange in Er³⁺-doped tellurite glass with a composition of 75TeO₂-2GeO₂-10Na₂O-12ZnO-1Er₂O₃ (mol%). The metric, of T_x − T_g, indicates that the glass has good thermal stability. Measurments of refractive index, absorption spectrum, luminescence and lifetime were made. The glass was chemically stable during the ion exchange process. Monomode and multimode planar waveguides in the tellurite glasses have been prepared. We determined the depth of the guides, effective diffusion coefficient and the activation energy. The depths of the waveguides could be controlled by varying ion exchange temperatures and times (250-280 °C, and 3-12 h were used).     

Arrhenius model for high-temperature glass-viscosity with a constant pre-exponential factor

A simplified form of the Arrhenius equation, ln η = A + B(x)/T, where η is the viscosity, T the temperature, x the composition vector, and A and B the Arrhenius coefficients, was fitted to glass-viscosity data for the processing temperature range (the range at which the viscosity is within 1-10³ Pa s) while setting A = constant and treating B(x) as a linear function of mass fractions of major components. Fitting the Arrhenius equation to over 550 viscosity data of commercial silicate glasses and approximately 1000 viscosity data of glasses for nuclear-waste glasses resulted in the A values of −11.35 and −11.48, respectively. The fraction of the variability (R²) value ranged from 0.92 to 0.99 for commercial glasses and was 0.98 for waste glasses. The Arrhenius models estimate viscosities for melts of commercial glasses containing 42-84 mass% SiO₂ within the temperature range of 1100-1550 °C and viscosity range of 5-400 Pa s and for waste glasses containing 32-60 mass% SiO₂ within the temperature range of 850-1450 °C and viscosity range of 0.4-250 Pa s.     

Properties and structure of binary tin phosphate glasses

The properties and structures of binary xSnO*(100 − x)P₂O₅ (50 ≤ x ≤ 70 mol%) glasses were evaluated. The glass transition temperatures (T_g), determined by differential thermal analysis (DTA), range from 246 to 264 °C, for glasses prepared under identical conditions. The refractive index (n_D) increases from 1.701 to 1.833 as x increases from 50 to 70, and the Abbe number (ν_D) decreases from 29.1 to 20.4 over the same range. Infrared spectroscopy was used to estimate water contents in the glasses, which decreased with an increase in SnO content, from about 1570 ppm OH for x = 50 to about 50 ppm OH for x = 70, for glasses quenched from melts held at 1000 °C for 15 min. Residual water affects thermal properties, like T_g, and variations in water contents due to differences in melt processing explain the wide variety of glass properties reported in the literature. Raman spectroscopy indicates that progressively shorter phosphate chains are present in the structures of the binary Sn-phosphate glasses with increasing SnO contents.     

One master curve for self-diffusion of one atom in different glass-forming liquids

Self-diffusion of a single atom α in glass-forming liquids, A_xB_yC_z ?, is studied from a unified point of view based on the mean-field theory (MFT) proposed recently by the present author, where α ∈ {A, B, C,...} and x + y + z + cdots = 100. Several experimental data and simulation results available at present are then analyzed consistently with the aid of MFT. Thus, it is shown that there exists a master curve for the long-time self-diffusion coefficient D_S^L(α)of α atom, even though atom α belongs to any different multicomponent glass-forming liquids. This suggests that if a whole data set for D_S^L(α) in a simple glass-forming liquid is once found, only one data point for α atom in any other complex glass-forming liquids is enough to predict a whole control parameter dependence of D_S^L(α) for each α atom belonging to those liquids.