Isochronal crystallization kinetics of Cu60Zr20Ti20 bulk metallic glass

Isochronal crystallization kinetics of Cu₆₀Zr₂₀Ti₂₀ bulk metallic glass has been investigated by differential scanning calorimetry. By means of the Kissinger, Ozawa, Kempen, Matusita and Gao methods, average effective activation energies for the first and second crystallization reactions in Cu₆₀Zr₂₀Ti₂₀ are calculated to be about 375 ± 9 and 312 ± 11 kJ mol⁻¹, respectively, which are smaller than the values deduced from isothermal experiments. Meanwhile, average Avrami exponents, 3.0 ± 0.1 and 3.4 ± 0.2, for two crystallization reactions in isochronal anneals, differ from the value about 2.0 in isothermal anneals. The nonidentity of the Avrami exponents and effective activation energies may be contributed to different crystallization mechanisms and the nature of non-isokinetic between isochronal and isothermal experiments. The values of frequency factor k₀ for the first and second crystallization reactions of Cu₆₀Zr₂₀Ti₂₀ are (1.7 ± 0.3) × 10²⁴ and (7.0 ± 0.8) × 10¹⁸ s⁻¹, respectively, and the large value of k₀ has been discussed in terms of the atomic configuration and interaction.     

EPR study of RLi2O.V2O5, RNa2O.V2O5, RCaO.V2O5, and RBaO.V2O5 modified vanadate glass systems

Experimental EPR spectra in several modified vanadate glass systems reveal hyperfine structure (hfs) lines whose widths vary with the molar ratio of modifier to vanadium pentoxide, R. In the RNa₂O.V₂O₅ system, for example, hfs lines show no resolution at low R values (near 0.1); by contrast, these lines exhibit dramatic narrowing as R approaches 0.5. In the model proposed here, this narrowing is due to an increase in hopping time for small polarons associated with V⁴⁺ ions in these systems. Increases in polaron hopping times are accompanied by increases in electron spin-spin relaxation times T₂'s, and, an associated narrowing of EPR linewidths. Experiments confirm that spectral widths are limited by electron T₂'s due to the fact that EPR linewidths do not vary with temperature down to 4.2 K. Resolved spectra in RNa₂O.V₂O₅ at R = 0.5 reveal a hyperfine coupling parameter of 0.0177 ± 0.0008 T, corresponding to an upper-limit polaron hopping frequency of 487 ± 20 MHz. By similar analyses, the systems of RCaO.V₂O₅, RBaO.V₂O₅, and RLi₂O.V₂O₅ exhibit comparable polaron hopping frequencies limits of 480 ± 20 MHz, 469 ± 20 MHz, and 468 ± 20 MHz, respectively, when R is near 1.0. In addition to the relaxation effects discussed here, results of modeling of resolved spectra to obtain hyperfine coupling constants A_|| and A_┴, and g_┴ values g_|| and g_┴ are presented and discussed.     

Crystallization kinetics determination of Pb15Ge27Se58 chalcogenide glass by using the various heating rates (VHR) method

The kinetics of crystallization of Pb₁₅Ge₂₇Se₅₈ was studied by differential scanning calorimetry non-isothermally. Various experimental methods are currently employed for determining the kinetic parameters of crystallization in a glassy system. These parameters include the activation energy of crystallization E (kJ/mol), the kinetic exponent n and the frequency factor K_o (s⁻¹). Recently, a new method (VHR method) has been derived from Johnson-Mehl-Avrami (JMA) transformation rate equation to calculate - in sequence - the crystallization kinetic parameters of a glassy system. The VHR technique has been used to estimate the crystallization parameters of Pb₁₅Ge₂₇Se₅₈ chalcogenide glass under non-isothermal conditions. The average value of E, n and K_o are found equal to 181.74 ± 0.58 (kJ/mol), 1.085 ± 0.023 and (9.196 ± 0.716) × 10¹² (s⁻¹), respectively. The kinetic exponent, n ≈ 1 indicates a surface nucleation mechanism.     

Crystallization behavior of (GeS2)0.1(Sb2S3)0.9 glass

The crystal growth kinetics of antimony trisulfide in (GeS₂)_0.1(Sb₂S₃)_0.9 glass has been studied by microscopy and DSC. The linear crystal growth kinetics has been confirmed in the temperature range 492 ? T ? 515 K (E_G = 405 ± 7 kJ mol⁻¹). The applicability of standard growth models has been assessed. From the crystal growth rate corrected for viscosity plotted as a function of undercooling it has been found that the most probable mechanism is interface controlled 2D nucleated growth. The non-isothermal DSC data, corresponding to the bulk sample, can be described by the Johnson-Mehl-Avrami equation.     

Floating-zone growth of large high-quality CoAl2O4 single crystals

We report the first successful floating-zone growth of high-quality CoAl₂O₄ single crystals with volume up to 1 cm³ free from inclusions and sub-grains. The neutron rocking curves of the CoAl₂O₄ crystal have the width of about 0.30 degree proving the excellent quality of the grown samples. X-ray synchrotron experiments show that crystals have spinel structure with the lattice constant a₀=8.09853(1) Å. Magnetization measurements give the effective magnetic moment μ_eff=4.63 μ_B per Co⁺² ion in a good agreement with previous measurements on ceramic samples.     

Crystallization behavior and microstructure of powdered and bulk ZnO-Al2O3-SiO2 glass-ceramics

The crystallization behavior of glass with the composition: 55.6 mol% SiO₂, 22.8 mol% Al₂O₃, 17.7 mol% ZnO and 3.84 mol% of TiO₂ as nucleating agent and with different particle sizes has been studied by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and tranmission electron microscopy (TEM). In glass powders two crystalline phases: zinc-aluminosilicate s.s. with high-quartz structure, Zn_x/2Al_xSi_3−xO₆, (x varies dependent on heat-treatment temperature) and gahnite are formed. The ratio of these phases depends on particle sizes. In bulk glass, however, gahnite is the sole crystalline phase. The composition of initially formed zinc-aluminosilicate s.s. was determined by Rietveld refinement of XRD patterns to be Zn_0.69Al_1.38Si_1.62O₆. With temperature increase, the amount of zinc-aluminosilicate s.s decreased with simultaneous reduce of zinc and aluminum incorporated in the structure. Eventually at 1423 K almost pure high-quartz structure was formed. The activation energies of zinc-aluminosilicate s.s. and gahnite crystallization were determined by non-isothermal method to be 510 ± 18 and 344 ± 17 kJ mol⁻¹, respectively. The latter value matches well with those cited in literature for crystal growth of gahnite in similar glasses. That is attributed to the fact that the high-quartz structure acts as a precursor for gahnite crystallization.     

Phase separation, crystallization and leaching of microporous glass ceramics in the CaO-TiO2-P2O5 system

Microporous glass ceramics belonging to the CaO-TiO₂-P₂O₅ system were prepared with the assumption of a 2:1 mole ratio for β-Ca₃(PO₄)₂:CaTi₄(PO₄)₆, the anticipated crystalline phases in the end product. The glasses formulated according to the above composition were melted and cast onto a steel mold and were crystallized to glass ceramics containing the above phases. Dilatometric/differential thermal analysis (DTA) techniques were utilized to determine the appropriate phase separation-nucleation and crystallization temperatures. The crystalline products and resulting microstructures in various stages of process were determined and observed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). By leaching the resulting glass ceramics in HCl, β-Ca₃(PO₄)₂ was dissolved out leaving a porous skeleton of CaTi₄(PO₄)₆. It was found that the volume porosity, specific surface area and mean pore diameter of microporous glass ceramics can be managed through the proper selection of heat treatment conditions. In the optimized conditions for fabricating glass ceramics of minimum mean pore size the values of 41 ± 4%, 26 ± 3 m²/g and 14.3 ± 2 nm were obtained for porosity, surface area and pore diameter respectively.     

Synthesis of Nb2O5·nH2O nanoparticles by water-in-oil microemulsion

Hydrous niobium oxide (Nb₂O₅·nH₂O) nanoparticles had been successfully prepared by water-in-oil microemulsion. They were characterized by X-ray diffraction (XRD), thermal analysis (TG/DTG), Fourier transform infrared spectroscopy (FTIR), BET surface area measurement, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The results showed that the nanoparticle was exactly Nb₂O₅·nH₂O with spherical shape. Their BET surface area was 60 m² g⁻¹. XRD results showed that Nb₂O₅·nH₂O nanoparticles with crystallite size in nanometer scale were formed. The crystallinity and crystallity size increased with increasing annealing temperature. TT-phase of Nb₂O₅ was obtained when the sample is annealed at 550 °C.     

Ultra-soft magnetic properties and giant magneto-impedance of Co68Fe4.5Si12·5B15

We have prepared an amorphous Co₆₈Fe_4.5Si_l2·₅B₁₅ alloy, annealed it in the temperature range of 200-580 °C and carried out a detailed study of the effect of crystallization on its magnetic properties. When annealed in an optimized condition, a very high value of initial permeability of the order of ~ 10⁴ has been attained in association with a drastic decrease of the relative loss factor. This change of properties has been attributed due to the formation of nanograins of fcc Co and Co₃B, as identified by X-ray diffraction and differential thermal analysis. The activation energy of crystallization is 4.18 eV. Hysteresis loop parameters were then extensively studied for the samples annealed at various temperatures. Finally, a very high value of giant magneto-impedance (GMI)—which is a characteristic property of Co-based amorphous alloys derived from well defined anisotropy axis (around 375) has been observed for a sample annealed at 380 °C.     

Structural transformation on Se0.8Te0.2 chalcogenide glass

Using X-ray diffraction and differential scanning calorimetry (DSC), the structure and the crystallization mechanism of Se_0.8Te_0.2 chalcogenide glass has been studied. The structure of the crystalline phase has been refined using the Rietveld technique. The crystal structure is hexagonal with lattice parameter a = 0.443 nm and c = 0.511 nm. The average crystallite size obtained using Scherrer equation is equal 16.2 nm, so it lies in the nano-range. From the radial distribution function, the short range order (SRO) of the amorphous phase has been discussed. The structure unit of the SRO is regular tetrahedron with (r₂/r₁) = 1.61. The Se_0.8Te_0.2 glassy sample obeys the chemical order network model, CONM. Some amorphous structural parameters have been deduced. The crystallization mechanism of the amorphous phase is one-dimensional growth. The calculated value of the glass transition activation energy (E_g) and the crystallization activation energy (E_c) are 159.8 ± 0.3 and 104.3 ± 0.51 kJ/mol, respectively.     

Physicochemical studies of phosphate based P2O5-Na2O-CaO-TiO2 glasses for biomedical applications

Glasses P₂O₅-Na₂O-CaO-TiO₂ with different TiO₂ contents and fixed P₂O₅ (45 wt%) and CaO (24 wt%) have been prepared employing the normal melting and annealing technique. Measurements such as ultrasonic velocity, attenuation, solubility and pH have been carried out in all the compositions of the glasses. It is interesting to note that the above measured ultrasonic parameters exhibit an abnormal behavior (minimum) at 0.5 wt% of TiO₂ content, beyond which an increase in these parameters with increasing TiO₂ content is observed. The maximum pH values and Ca²⁺ ion release have been observed for the TiO₂ free glass those compositions with and the low TiO₂(?1.0 wt%) content. As the content of the TiO₂ increases, the solubility of the glasses decreases. The observed weight loss reveals two stages of phosphate dissolution kinetics i.e. the first stage, in which the weight loss is proportional to t^1/2, and a second stage in which a linear behavior is observed.     

Structural investigations of magnesium silicate glasses by Si 2D Magic-Angle Flipping NMR

The two-dimensional Magic Angle Flipping Nuclear Magnetic Resonance (2D MAF NMR) experiment on ²⁹Si nuclei is used to determine the distribution of Q⁽ⁿ⁾ sites in two ²⁹Si-enriched magnesium silicate glasses with compositions 2MgO·SiO₂ and MgO·SiO₂. A significant degree of polymerization is observed in the 2MgO·SiO₂ glass, supporting previous studies using Raman and ²⁹Si NMR spectroscopy. Relative abundances of 0.629 ± 0.001 for Q⁽⁰⁾ and 0.371 ± 0.001 for Q⁽¹⁾ were obtained from spectral fits of the 2D MAF spectrum of the 2MgO·SiO₂ glass. Mole fractions for the free oxygen anion and each Q⁽ⁿ⁾-species were calculated and used in a thermodynamic model of Q⁽ⁿ⁾ disproportionation to calculate an equilibrium constant of k₀ = 0.04 ± 0.02 in 2MgO·SiO₂. In the MgO·SiO₂ glass relative abundance of 0.014 ± 0.001 for Q⁽⁰⁾, 0.191 ± 0.003 for Q⁽¹⁾, 0.530 ± 0.004 for Q⁽²⁾, 0.252 ± 0.003 for Q⁽³⁾, and 0.014 ± 0.001 for Q⁽⁴⁾ were measured. The mole fractions for the free oxygen anion and each Q⁽ⁿ⁾-species in MgO·SiO₂ were used to calculate corresponding disproportionation equilibrium constants of k₁ = 0.19 ± 0.02, k₂ = 0.174 ± 0.009, and k₃ = 0.11 ± 0.01. A comparison of k₃ values from previous MAF studies of various alkali and alkaline earth silicate glasses indicate an exponential increase in k₃ with the increasing modifying cation potential. Using the van't Hoff relation, we show that differences in both thermal history and modifier cation potential contribute to this spread in k₃ values. Nuclear shielding tensor anisotropy, ζ, and asymmetry, η, values of ζ = 0.0 ppm and η = 0.0 for Q⁽⁰⁾ and ζ = 33.0 ± 0.1 ppm, and η = 0.4 ± 0.1 for Q⁽¹⁾ in 2MgO·SiO₂ glass were determined from its 2D MAF spectrum. These values were used in obtaining the remaining values of ζ = − 36.0 ± 0.5 ppm and η = 0.99 ± 0.01 for Q⁽²⁾, and ζ = − 27.5 ± 0.5 ppm and η = 0.45 ± 0.11 for Q⁽³⁾, ζ = 0.0 ppm and η = 0.0 for Q⁽⁴⁾ in the MgO·SiO₂ glass from its 2D MAF spectrum. The magnitude of ζ values observed are lower than those reported in previous MAF studies of alkali and alkaline earth silicate glasses containing different modifier cations, consistent with previously reported trends in ζ versus modifying cation potential.     

Non-isothermal crystallization kinetics of La2CaB10O19 from glass

The non-isothermal crystallization kinetics of La₂CaB₁₀O₁₉ (LCB) from a La₂O₃-CaO-B₂O₃ glass was studied. Differential thermal analysis methods were performed on three glass powders to obtain the kinetic parameters of LCB crystallization mechanism. The activation energies for overall crystallization (E), obtained by the methods of Kissinger and Ozawa, were in the range of 479-569 kJ/mol. Multiple (five) analysis methods were used to estimate the Avrami exponent (n), which could consequently be reduced into the single value of n = 3.1 ± 0.3. The growth morphology index (m) of LCB was corroborated by microscopy (optical and electron) images, which revealed a three dimensional growth. Energy dispersive spectroscopy confirmed that LCB is the crystallizing phase from the glass by an interface controlled mechanism. The parameters of the Johnson-Mehl-Avrami kinetic model for the analysis of LCB crystallization from glass were found to be n = m = 3.     

Fluorinated nanoporous SiO2 films with ultra-low dielectric constant

Fluorinated nanoporous silica (denoted as SiO₂:F) thin films with low dielectric constant were prepared by a sol-gel method and spin coating technique. The leakage current densities of the SiO₂:F thin films were 10⁻⁸ and 3 × 10⁻⁶ A/cm² respectively for the as-deposited films and for those subjected to annealing at a temperature of 450 °C. These currents are more than one order of magnitude lower than those of the common SiO₂ films. Photoluminescent results showed strong blue-light emission and a small blue shift in the SiO₂:F films that were related to the increment of the porosity. The dielectric properties were also characterized and the k value of the annealed SiO₂:F film was found to be about 1.67. The hole size in the films is small and the size distribution is uniform for the annealed SiO₂:F samples due to the effects of fluorination. The underlying mechanism for fluorination is discussed in this paper.     

Electron spin resonance and magnetic studies on CaO-SiO2-P2O5-Na2O-Fe2O3 glasses

Room temperature electron spin resonance (ESR) spectra and temperature dependent magnetic susceptibility measurements have been performed to investigate the effect of iron ions in 41CaO · (52 − x)SiO₂ · 4P₂O₅ · xFe₂O₃ · 3Na₂O (2 ? x ? 10 mol%) glasses. The ESR spectra of the glass exhibited the absorptions centered at g ≈ 2.1 and g ≈ 4.3. The variation of the intensity and linewidth of these absorption lines with composition has been interpreted in terms of variation in the concentration of the Fe²⁺ and Fe³⁺ in the glass and the interaction between the iron ions. The magnetic susceptibility data were used to obtain information on the relative concentration and interaction between the iron ions in the glass.     

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

This work assesses the relative effectiveness of four techniques to reduce the defect density in heteroepitaxial nonpolar a-plane GaN films grown on r-plane sapphire by metalorganic vapour phase epitaxy (MOVPE). The defect reduction techniques studied were: 3D–2D growth, SiN_x interlayers, ScN interlayers and epitaxial lateral overgrowth (ELOG). Plan-view transmission electron microscopy (TEM) showed that the GaN layer grown in a 2D fashion had a dislocation and basal-plane stacking fault (BSF) density of (1.9±0.2)×10¹¹ cm⁻² and (1.1±0.9)×10⁶ cm⁻¹, respectively. The dislocation and BSF densities were reduced by all methods compared to this 2D-grown layer (used as a seed layer for the interlayer and ELOG methods). The greatest reduction was achieved in the (0 0 0 1) wing of the ELOG sample, where the dislocation density was <1×10⁶ cm⁻² and BSF density was (2.0±0.7)×10⁴ cm⁻¹. Of the in-situ techniques, SiN_x interlayers were most effective: the interlayer with the highest surface coverage that was studied reduced the BSF density to (4.0±0.2)×10⁵ cm⁻¹ and the dislocation density was lowered by over two orders of magnitude to (3.5±0.2)×10⁸ cm⁻².     

The effect of composition on UV-vis-NIR spectra of iron doped glasses in the systems Na2O/MgO/SiO2 and Na2O/MgO/Al2O3/SiO2

Glasses with the compositions xNa₂O · 10MgO · (90 − x)SiO₂, 10Na₂O · xMgO · (90 − x)SiO₂, 5Na₂O · 15MgO · xAl₂O₃ · (80 − x)SiO₂, xNa₂O · 10MgO · 10Al₂O₃ · (80 − x)SiO₂, 10Na₂O · 10MgO · xAl₂O₃ · (80 − x)SiO₂, 10Na₂O · 5MgO · 10Al₂O₃ · (80 − x)SiO₂ were melted and studied using UV-vis-NIR spectroscopy in the wavenumber range from 5000 to 30 000 cm⁻¹. At [Al₂O₃] > [Na₂O], the UV-cut off is strongly shifted to smaller wavenumbers and the NIR peak at around 10 000 cm⁻¹ attributed to Fe²⁺ in sixfold coordination gets narrower. Furthermore, the intensity of the NIR peak at 5500 cm⁻¹ increases. This is explained by the incorporation of iron in the respective glass structures.     

Crystallization kinetics of Fe73.5−xMnxCu1Nb3Si13.5B9 (x = 0, 1, 3, 5, 7) amorphous alloys

In this study, we have investigated the effect of substituting Mn for Fe on the crystallization kinetics of amorphous Fe_73.5−xMn_xCu₁Nb₃Si_13.5B₉ (x = 1, 3, 5, 7) alloys. The samples were annealed at 550 °C and 600 °C for 1 h under an argon atmosphere. The X-ray diffraction analyses showed only a crystalline peak belonging to the α-Fe(Si) phase, with the grain size ranging from 12.2 nm for x = 0 to 16.7 nm for x = 7. The activation energies of the alloys were calculated using Kissinger, Ozawa and Augis-Bennett models based on differential thermal analysis data. The Avrami exponent n was calculated from the Johnson-Mehl-Avrami equation. The activation energy increased up to x = 3, then decreased with increasing Mn content. The values of the Avrami exponent showed that the crystallization is typical diffusion-controlled three-dimensional growth at a constant nucleation rate.     

The effect of alumina on the Sn/Sn redox equilibrium and the incorporation of tin in Na2O/Al2O3/SiO2 melts

Glasses with the basic compositions 10Na₂O · 10CaO · xAl₂O₃ · (80 − x)SiO₂ (x=0, 5, 15, 25) and 16Na₂O · 10CaO · xAl₂O₃ · (74 − x)SiO₂ (x=0, 5, 10, 15, 20) doped with 0.25-0.5 mol% SnO₂ were studied using square-wave-voltammetry at temperatures in the range from 1000 to 1600 °C. The voltammograms exhibit a maximum which increases linearly with increasing temperature. With increasing alumina concentration and decreasing Na₂O concentration the peak potentials get more negative. Mössbauer spectra showed two signals attributed to Sn²⁺ and Sn⁴⁺. Increasing alumina concentrations did not affect the isomer shift of Sn²⁺; however, they led to increasing quadrupole splitting, while in the case of Sn⁴⁺ both isomer shift and quadrupole splitting increased. A structural model is proposed which explains the effect of the composition on both the peak potentials and the Mössbauer parameters.     

Structure and growth morphology of Gd2O3-doped CeO2 thin films

Gd₂O₃-doped CeO₂ (Gd_0.1Ce_0.9O_1.95, GDC) thin films were synthesized on (1 0 0) Si single crystal substrates by a reactive radio frequency magnetron sputtering technique. Structures and surface morphologies were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and one-dimensional power spectral density (1DPSD) analysis. The XRD patterns indicated that, in the temperature range of 200–700 °C, f.c.c. structured GDC thin films were formed with growth orientations varying with temperature—random growth at 200 °C, (2 2 0) textures at 300–600 °C and (1 1 1) texture at 700 °C. GDC film synthesized at 200 °C had the smoothest surface with roughness of R_rms=0.973 nm. Its 1DPSD plot was characterized with a constant part at the low frequencies and a part at the high frequencies that could be fitted by the f^−2.4 power law decay. Such surface feature and scaling behavior were probably caused by the high deposition rate and random growth in the GDC film at this temperature. At higher temperatures (300–700 °C), however, an intermediate frequency slope (−γ₂≈−2) appeared in the 1DPSD plots between the low frequency constant part and the high frequency part fitted by f⁻⁴ power law decay, which indicated a roughing mechanism dominated by crystallographic orientation growth that caused much rougher surfaces in GDC films (R_rms>4 nm).