Ionic conductivity of Li2O-BaO-Bi2O3 glasses

Dc and ac conductivities of Li₂O-BaO-Bi₂O₃ glasses have been studied in a temperature range of 263-523 K and a frequency range of 10 Hz-2 MHz and have been compared with those of binary Li₂O-Bi₂O₃ glasses. The frequency dependent conductivity has been studied employing both the modulus and conductivity formalisms. We have observed small changes in the dc conductivity and its activation energy from those of the binary glass when content of BaO is small. However we have observed noticeable changes in the conductivity and the activation energy when BaO content is large. The significant changes in the values of the non-exponential parameter and the power-law exponent of the ac electrical properties have been observed due to introduction of BaO in the lithium bismuthate glasses. The existing relation between the power-law exponent and the non-exponential parameter was also violated in the present glass compositions.     

Structural, thermal and electrical properties of PVA-LiCF3SO3 polymer electrolyte

The development of polymeric systems with high ionic conductivity is one of the main objectives in Li rechargeable battery. In the present study, the different composition of PVA-LiCF₃SO₃ polymer electrolyte has been prepared by solution cast technique using DMSO as solvent. The FTIR study confirms the polymer-salt complex formation. The amorphous nature of the polymer has been confirmed by XRD analysis. DSC measurements show decrease in T_g with increasing salt concentration. The temperature dependent conductivity obeys Arrhenius relationship. The maximum conductivity has been observed in the order of 7 × 10^− 4 S cm^− 1 for 25 mol% of LiCF₃SO₃. The activation energy has been found to be 0.16 eV. The two peaks have been observed in the dielectric loss spectrum which shows two types of relaxation α and β.     

Thermal and electrical properties of BaO-B2O3-ZnO glasses

Glasses in the BaO-ZnO-B₂O₃ system were examined as potential replacement for PbO glass frits with low firing temperature (500-600 °C) for the dielectric layer of a plasma display panel (PDP). The glasses were evaluated for glass transition temperature (T_g), thermal expansion coefficient (α) and dielectric constant ε. The electrical and the thermal properties were also compared with theoretical data calculated by a known empirical equation. T_g of the glasses varied between 480 and 560 °C, and α was in the range of 7-9×10⁻⁶ K⁻¹. The dielectric constant ranges from 14 to 19 and the theoretical data showed lower α and ε than the experimental data. The results suggest that BaO-ZnO-B₂O₃ glasses would be suitable as an alternative to Pb-based dielectric layer in PDPs.     

Electrical characterisation of SrTiO3/Si interfaces

Deposition of SrTiO₃ (STO) thin films by ultra-high vacuum rf magnetron sputtering was performed in order to produce high-quality STO/p-Si (1 0 0) interfaces and STO insulator layers with high dielectric constants. The deposition temperatures were in the range from room temperature to 550 °C. Capacitance-voltage (C-V) and conductance-frequency measurements showed that the dielectric constant of the films ranges from 55 to 120. C-V measurements on Al/STO/p-Si structures clearly revealed the creation of metal-insulator-semiconductor diodes. The interface state densities (D_it) at the STO/p-Si interfaces were obtained from admittance spectroscopy measurements. The samples deposited at lower temperatures revealed values of D_it between 2×10¹¹ and 3.5×10¹² eV⁻¹ cm⁻² while the higher temperature deposited samples had a higher D_it ranging between 1×10¹¹ and 1×10¹³ eV⁻¹ cm⁻². The above results were also well correlated to X-ray diffraction measurements, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry.     

Electrical properties of Al2O3 film deposited at low temperatures

Amorphous Al₂O₃ films were deposited on p-Si by rf magnetron sputtering to investigate their potential as a gate dielectric in organic thin film transistors (OTFTs). The deposition was performed at room temperature, 200 and 300 °C using Al₂O₃ and Al targets. Achieved Al₂O₃ films have higher capacitance values than thermally grown SiO₂ as characterized by capacitance-voltage measurements. It is also found from current-voltage and roughness measurements that the leakage current and the surface roughness can be least when the films are deposited at room temperature. The capacitance of the film obtained from the Al₂O₃ target appears higher than that of the Al₂O₃ film from the Al target while the results of electrical breakdown are opposite. These room temperature processes are promising for applications to the gate dielectrics of organic TFTs.     

Characterisation of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties

Al₂O₃ and ZrO₂ mixtures for gate dielectrics have been investigated as replacements for silicon dioxide aiming to reduce the gate leakage current and reliability in future CMOS devices. Al₂O₃ and ZrO₂ films were deposited by atomic layer chemical vapor deposition (ALCVD) on HF dipped silicon wafers. The growth behavior has been characterized structurally and electrically. ALCVD growth of ZrO₂ on a hydrogen terminated silicon surface yields films with deteriorated electrical properties due to the uncontrolled formation of interfacial oxide while decent interfaces are obtained in the case of Al₂O₃. Another concern with respect to reliability aspects is the relatively low crystallization temperature of amorphous high-k materials deposited by ALCVD. In order to maintain the amorphous structure at high temperatures needed for dopant activation in the source drain regions of CMOS devices, binary Al/Zr compounds and laminated stacks of thin Al₂O₃ and ZrO₂ films were deposited. X-ray diffraction and transmission electron microscope analysis show that the crystallization temperature can be increased dramatically by using a mixed oxide approach. Electrical characterization shows orders of leakage current reduction at 1.1-1.7 nm of equivalent oxide thickness. The permittivity of the deposited films is determined by combining quantum mechanically corrected capacitance voltage measurements with structural analysis by transmission electron microscope, X-ray reflectivity, Rutherford backscattering, X-ray photoelectron spectroscopy, and inductively coupled plasma optical emission spectroscopy. The k-values are discussed with respect to formation of interfacial oxide and possible silicate formation.     

X-ray absorption and Raman characterizations of TeO2-Ga2O3 glasses

The thermodynamic properties of transparent glasses prepared in the TeO₂-Ga₂O₃ system were investigated by differential scanning calorimetry. The change of the thermal parameters as a function of the chemical composition is discussed. Raman and both Te L_III and Ga K edge X-ray absorption spectroscopies at room temperature were used to examine the short range order. Analyses of the spectra suggest that the addition of Ga₂O₃ content to the TeO₂ glass matrix induces the transformation of trigonal bipyramids (TeO₄E, E=lone electronic pair 5s² of Te) to trigonal pyramids (TeO₃E) with formation of Te-O-Ga bridging bonds. Furthermore, Ga K edge XANES and EXAFS studies show that Ga atoms exhibit both tetrahedral (GaO₄) and octahedral (GaO₆) environments.     

Bioactive glasses in the system CaO-B2O3-P2O5: Preparation, structural study and in vitro evaluation

Glasses in the system x B₂O₃(1 − x) [y CaO P₂O₅], (x = 0, 0.1, 0.2, 0.3, y = 2, 2.6, 3, 4, 5) have been prepared by fast quenching of high temperature melts. The presence of B₂O₃ affected the glass forming ability, allowing the preparation of calcium phosphate glasses with y ? 2.6. The structure of glasses was analyzed by μ-Raman and infrared spectroscopy. The analysis indicated that the glass network is dominated by highly charged species from phosphate tetrahedra with 3 (pyro) or 4 (ortho) NBOs, while the boron atoms are incorporated mainly in 3 coordinated sites in the form of B∅₃ or B∅₂O⁻ units. A small fraction of units was also evident from the spectra analysis of glasses with high CaO content. All calcium borophosphate glasses exhibited bioactivity after soaking in SBF solution within a few days. This was observed by μ-Raman and SEM microscopy, while XRD patterns clearly revealed growth of hydroxyapatite phase. The presence of boron in the glass network has a catalytic effect at favoring bioactivity of the otherwise bioinert calcium phosphate glasses.     

Optical properties of and concentration quenching in Bi2O3-B2O3-Ga2O3 glasses

Er₂O₃-doped Bi₂O₃-B₂O₃-Ga₂O₃ glasses were prepared by the conventional melt-quenching method, and the Er³⁺:⁴I_13/2 → ⁴I_15/2 fluorescence properties are studied for different Er³⁺ concentrations. when the Er₂O₃ concentration increases from 0.03 to 3.0 mol%, the measured lifetime of Er³⁺:⁴I_13/2 level decrease from 2.24 to 0.9 m s, and from 0.25 to 0.20 m s for the Er³⁺:⁴I_11/2 level. The fast energy migration among Er³⁺ ions cause the reduction of lifetime of the ⁴I_13/2 level, whereas the change in the ⁴I_11/2 level is mainly due to a cooperative upconversion process (⁴I_11/2, ⁴I_11/2) → (⁴F_7/2, ⁴I_15/2). Based on the dipole-dipole interaction theory, the interaction parameter, C_Er,Er, for the migration rate of Er³⁺:⁴I_13/2 ↔ ⁴I_13/2 was calculated to be 32 × 10⁻⁴⁰ cm⁶ s⁻¹.     

Spectroscopic properties of Er-doped Na2O-Sb2O3-B2O3-SiO2 glasses

Spectroscopic properties of Er³⁺-doped Na₂O-Sb₂O₃-B₂O₃-SiO₂ glasses have been investigated for developing 1.5-μm broadband fiber amplifiers. An intense 1.5-μm near infrared emission with a broad full width at half maximum (FWHM) of 88 nm has been obtained for Er³⁺-doped 5Na₂O-20Sb₂O₃-35B₂O₃-40SiO₂ glass upon excitation with a 980 nm laser diode. The obtained emission cross-section of the ⁴I_13/2 → ⁴I_15/2 transition and the lifetime of the ⁴I_13/2 level of Er³⁺ ions are 6.8 × 10⁻²¹ cm² and 0.36 ms, respectively. It is noted that the product of the emission cross-section and the FWHM of the glass, σ_e × FWHM, is as great as 598.4 × 10⁻²¹ cm² nm, which is comparable or higher than that of Er³⁺-doped bismuth-based and tellurite-based glasses. These special optical properties encourage in identifying them as important materials for potential applications in high performance optics and optical communication networks.     

A square-wave voltammetric study on the diffusivities of polyvalent elements in CaO/BaO/Al2O3/SiO2 glass melts

Diffusion coefficients of various polyvalent ions (Sn²⁺, As³⁺, As⁵⁺, Sb³⁺, Sb⁵⁺, Cr³⁺, Ti⁴⁺, V⁴⁺, V⁵⁺ and Fe³⁺) were measured in melts with the basic compositions of 10CaO·10 BaO·10Al₂O₃·70SiO₂ and 10CaO·10BaO·15Al₂O₃·65SiO₂ by means of square-wave voltammetry. At temperatures in the range of 1300-1600 °C, linear correlations between logD and 1/T were observed. At 1400 °C, the diffusion coefficients obtained are compared with those obtained from other glass melt compositions.     

Electrical conductivity and dielectric properties of Bi2O3-GeO2-PbO-MoO3 glasses

Glasses having compositions 40Bi₂O₃-20GeO₂-(40−x)PbO-xMoO₃ (where x = 3, 6, 9, 12 and 15 mol%) were prepared by normal melt quenching technique. The density (d) decreases gradually with the increase of the MoO₃ content in such glasses. This may be due to the lower molecular weight MoO₃ is substituted by a higher molecular weight PbO. The dc conductivity decreases while the activation energy increases with the increase of the MoO₃ content. The dc conductivity in the present glasses is electronic depends strongly upon the average distance, R, between the Mo ions. Analysis of the electrical properties has been made in the light of small polaron hopping model. The parameters obtained from the fits of the experimental data to this model are reasonable and consistent with glass composition. The conduction is attributed to non-adiabatic hopping of small polaron. Dielectric properties (constant ε, loss tan δ, ac conductivity σ_ac, over a range of frequency 0.12-100 kHz and temperature 325-650 K and frequency exponent s) of these glasses have been studied.     

Quenched glasses in the systems of Li2O with Al2O3, Ga2O3 and Bi2O3

By rapid quenching in a twin roller apparatus, glass was found to occur widely in the systems of Li₂O with Al₂O₃, Ga₂O₃, Bi₂O₃ and in mixed systems. Examination of the resulting flakes by X-ray powder diffraction, differential thermal analysis, and capacitance data revealed the occurrence of glass, glass transitions, crystallization exotherms and the nature of some of the crystallization paths.The log ionic conductivity of the glasses was found to follow a linear relationship with the Li concentration. Evidence was observed for three new metastable crystalline phases, one in the Li₂OAl₂O₃ system and two in the Li₂OBi₂O₃ system. The latter system also showed evidence for the occurrence of two glasses at almost all compositions.     

Thermally modulated differential scanning calorimetry of a glass of composition 45Na2O-40B2O3-10Al2O3-5In2O3

The kinetics of structural relaxation and of glass transition of the 45Na₂O-40B₂O₃-10Al₂O₃-5In₂O₃ glassforming melt is studied by means of standard DSC and of temperature modulated DSC. In this way the dependence of the fictive temperature on cooling rate is determined simultaneously with the determination of the dependence of the dynamic glass transition temperature on modulation frequency. Both sets of data are fitted together in terms of the equation of Ritland-Bartenev. It was found that the activation energy of the structural relaxation exhibits a moderate dependence on temperature with the dimensionless fragility parameter α=3.3 (for strong systems, α is about 1 and increases to about 8 for some very fragile polymeric systems).     

Ionic conduction, diffusion and glass transition in 0.2[XNa2O · (1−X)Rb2O] · 0.8B2O3

We have investigated the ionic transport in the 0.2[XNa₂O · (1−X)Rb₂O] · 0.8B₂O₃ mixed-alkali system with X=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 in the glassy and the undercooled-liquid state by means of impedance spectroscopy and tracer diffusion experiments. The calorimetric glass-transition temperature T_g obtained by differential scanning calorimetry shows a minimum with composition. The composition dependence of the electrical conductivity below T_g exhibits a minimum, as well. These deviations from an ‘ideal’ linear mixing rule are usually denoted as mixed-alkali effect. The dc conductivities times temperature σ_dc×T follow the Arrhenius law in the range below and above T_g, respectively. The glass transition appears as a kink in the Arrhenius presentation of σ_dc×T. Below the glass-transition temperature the onset frequency ν_on of the conductivity dispersion has an Arrhenius-like temperature dependence. According to ‘Summerfield scaling’ the activation enthalpies of σ_dc×T and ν_on are expected to be the same. This is indeed observed but only for the single-alkali compositions. The activation enthalpies of σ_dc×T as a function of composition show a classical mixed-alkali maximum, however the activation enthalpies of the onset frequencies as a function of composition exhibit a nearly constant behavior in contrast to the expectation from Summerfield scaling. The tracer diffusion measurements reveal a major difference in diffusion of ⁸⁶Rb and ²²Na in mixed-alkali glasses. A diffusivity crossover of tracer diffusion coefficients of ²²Na and ⁸⁶Rb occurs near X=0.2. By comparison of tracer and conductivity diffusivities the Haven ratio is deduced which shows a maximum near the conductivity minimum composition.     

EPR study of RLi2O.V2O5, RNa2O.V2O5, RCaO.V2O5, and RBaO.V2O5 modified vanadate glass systems

Experimental EPR spectra in several modified vanadate glass systems reveal hyperfine structure (hfs) lines whose widths vary with the molar ratio of modifier to vanadium pentoxide, R. In the RNa₂O.V₂O₅ system, for example, hfs lines show no resolution at low R values (near 0.1); by contrast, these lines exhibit dramatic narrowing as R approaches 0.5. In the model proposed here, this narrowing is due to an increase in hopping time for small polarons associated with V⁴⁺ ions in these systems. Increases in polaron hopping times are accompanied by increases in electron spin-spin relaxation times T₂'s, and, an associated narrowing of EPR linewidths. Experiments confirm that spectral widths are limited by electron T₂'s due to the fact that EPR linewidths do not vary with temperature down to 4.2 K. Resolved spectra in RNa₂O.V₂O₅ at R = 0.5 reveal a hyperfine coupling parameter of 0.0177 ± 0.0008 T, corresponding to an upper-limit polaron hopping frequency of 487 ± 20 MHz. By similar analyses, the systems of RCaO.V₂O₅, RBaO.V₂O₅, and RLi₂O.V₂O₅ exhibit comparable polaron hopping frequencies limits of 480 ± 20 MHz, 469 ± 20 MHz, and 468 ± 20 MHz, respectively, when R is near 1.0. In addition to the relaxation effects discussed here, results of modeling of resolved spectra to obtain hyperfine coupling constants A_|| and A_┴, and g_┴ values g_|| and g_┴ are presented and discussed.     

Ionic conductivity of Li2OB2O3 thin films

The ionic conductivity of evaporated Li₂OB₂O₃ thin films has been studied. These thin films were found to show a considerably high ionic conductivity of 1 × 10^?7 Ω^?1 cm^?1 at room temperature. The conductivity increases with increasing Li content and exhibits a maximum value near 3Li₂O·B₂O₃. The structure of these films was determined using infrared absorption and laser Raman scattering spectroscopy. Using the results, the correlation between structure and conductivity is also discussed.     

Structural study of PbO-MoO3-P2O5 glasses by Raman and NMR spectroscopy

Glasses in the ternary system PbO-MoO₃-P₂O₅ were prepared in three compositional series (100 − x)[0.5PbO-0.5P₂O₅]-xMoO₃ (A), 50PbO-yMoO₃-(50 − y)P₂O₅ (B) and (50 − z)PbO-xMoO₃-50P₂O₅ (C) and their structure was studied by Raman and ³¹P NMR spectroscopies. In the compositional series (100 − x)[0.5PbO-0.5P₂O₅]-xMoO₃ homogeneous glasses were prepared in the concentration region of 0-70 mol% MoO₃. Their glass transition temperature increases with increasing MoO₃ content having a maximum at x = 50 mol% MoO₃. ³¹P MAS NMR spectra reveal that in the glass series (A) the incorporation of MoO₃ results in the shortening of phosphate chains and gradual transformation Q² units into Q² and Q⁰ units, prevailing in glasses with a high MoO₃ content. Octahedral structural units MoO₆ dominate in most glass compositions and they are present also in the structure of Pb(MoO₂)₂(PO₄)₂ compound corresponding to the glass composition 50Pb(PO₃)₂-50MoO₃. The analysis of Raman spectra of glasses of the (B) series with a high MoO₃ content showed the transformation of octahedral MoO₆ units into tetrahedral MoO₄ units.     

Structural investigations of copper doped B2O3-Bi2O3 glasses with high bismuth oxide content

Raman and infrared spectroscopy have been employed to investigate the 99.5%[xB₂O₃(1−x)Bi₂O₃]0.5%CuO glasses with different Bi/B nominal ratios (0.07?x?0.625) in order to obtain information about the competitive role of B₂O₃ and Bi₂O₃ in the formation of the glass network. The glass samples have been prepared by melting at 1100 °C and rapidly cooling at room temperature. In order to relax the structure, to improve the local order and to develop crystalline phases the glass samples were kept at 575 °C for 10 h. The influence of both Bi₂O₃ and CuO on the vitreous B₂O₃ network as well as the local order changes around bismuth and boron atoms in as prepared and heat treated samples was studied. Structural modifications occurring in heat treated samples compared to the untreated glasses have been observed.