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1.
The effect of iron trichloride (FeC13) on chemical mechanical polishing (CMP) of Ge2Sb2Te5 (GST) film is inves- tigated in this paper. The polishing rate of GST increases from 38 nm/min to 144 nm/min when the FeC13 concentration changes from 0.01 wt% to 0.15 wt%, which is much faster than 20 nm/min for the 1 wt% H2O2-based slurry. This polish- ing rate trends are inversely correlated with the contact angle data of FeCl3-based slurry on the GST film surface. Thus, it is hypothesized that the hydrophilicity of the GST film surface is associated with the polishing rate during CMP. Atomic force microscope (AFM) and optical microscope (OM) are used to characterize the surface quality after CMP. The chemical mechanism is studied by potentiodynamic measurements such as Ecorr and Icorr to analyze chemical reaction between FeCl3 and GST surface. Finally, it is verified that slurry with FeCl3 has no influence on the electrical property of the post-CMP GST film by the resistivity-temperature (RT) tests.  相似文献   

2.
作为强激光系统的终端组件之一,光束采样光栅是制作在熔石英基底上的浅槽光栅。利用熔石英的传统化学机械抛光技术,修正熔石英光束采样光栅的槽型轮廓,降低局部偏高的衍射效率,以提高光束采样光栅的整体效率均匀性。利用此方法已成功将430 mm430 mm的光束采样光栅的衍射效率均方根值(RMS)由30%附近降低到5%以下。实验结果显示,利用传统化学机械抛光技术可以有效提高光束采样光栅衍射效率均匀性,这是一种可行的技术方案。  相似文献   

3.
绿色环保化学机械抛光液的研究进展   总被引:2,自引:0,他引:2       下载免费PDF全文
原子级加工制造是实现半导体晶圆原子尺度超光滑表面的有效途径.作为大尺寸高精密功能材料的原子级表面制造的重要加工手段之一,化学机械抛光(chemical mechanical polishing,CMP)凭借化学腐蚀和机械磨削的耦合协同作用,成为实现先进材料或器件超光滑无损伤表面平坦化加工的关键技术,在航空、航天、微电子等众多领域得到了广泛应用.然而,为了实现原子层级超滑表面的制备,CMP工艺中常采用的化学腐蚀和机械磨削方法需要使用具有强烈腐蚀性和高毒性的危险化学品,对生态系统产生了不可逆转的危害.因此,本文以绿色环保高性能抛光液作为对象,对加工原子量级表面所采用的化学添加剂进行分类总结,详尽分析在CMP过程中化学添加剂对材料表面性质调制的作用机理,为在原子级尺度下改善表面性质提供可参考的依据.最后,提出了CMP抛光液在原子级加工研究中面临的挑战,并对未来抛光液发展方向作出了展望,这对原子尺度表面精度的进一步提升具有深远的现实意义.  相似文献   

4.
Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness <6 Å (as compared to the initial roughness of 26 ± 6 Å) were obtained under optimized conditions with removal rates as high as 670 Å/min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail.  相似文献   

5.
V. L. Solozhenko 《高压研究》2013,33(1-6):140-143
Abstract

The analysis of the experimental data on the interaction of boron and its compounds with ammonia, nitrogen and hydrazine at 0.5–8.0 GPa and 600 to 1600 K was carried out in the frame of the new conception of phase p, T-diagram for the boron nitride. The results obtained show that in the E-N system an alternative metastable behavior of the forming boron nitride is observed in a wide p,T-range. And a considerable amount of the data obtained cannot be explained on the basis of the generally accepted view on the EN polymorphism.  相似文献   

6.
通过结合HF酸洗和微分干涉差显微成像对两组抛光元件的亚表面损伤进行直接观测和分析。结果显示微分干涉差显微成像相比于传统的明场成像具有更好的分辨率,可以更有效检测HF酸洗后暴露的各种浅塑性亚表面损伤。对两组抛光元件的亚表面损伤的对比分析发现熔石英元件在抛光中会产生大量的亚表面损伤,这些亚表面损伤绝大多数是浅塑性的划痕和坑,仅有少量的脆性断裂损伤,较大的抛光颗粒会产生更多更严重的亚表面损伤,并且这些亚表面损伤被表面沉积层所掩盖,表面粗糙度不能反映亚表面损伤的严重程度。  相似文献   

7.
Various β-gallium oxide (β-Ga2O3) nanostructures such as nanowire, nanobelt, nanosheet, and nanocolumn were synthesized by the thermal annealing of compacted gallium nitride (GaN) powder in flowing nitrogen. We suggest that Ga2O3 vapor might be formed by the reaction of oxygen with the gaseous Ga formed by GaN decomposition. The Ga2O3 vapor diffuses into voids derived by compacting GaN powder and is supersaturated there, resulting in the growth of Ga2O3 nanostructures via the vapor–solid (VS) mechanism. Ga2O3 plate-like hillocks and nanostructures were also grown on the surface of a c-plane sapphire placed on the GaN pellet.  相似文献   

8.
邹祥云  苑进社  蒋一祥 《物理学报》2012,61(14):148106-148106
采用等离子体增强化学气相沉积技术,以SiH4作为硅源, NH3和N2共同作为氮源,在单晶硅衬底上制备了不同的氮化硅薄膜. X射线衍射分析薄膜晶体结构,通过计算晶格尺寸大小证明了纳米硅颗粒的存在. 傅里叶变换红外光谱分析了薄膜中的键合作用的变化并结合化学反应过程对氮化硅薄膜中纳米硅颗粒的形成机制进行了研究,发现Si—Si键作为硅纳米颗粒的初始位置, 当反应朝着生成Si—Si的方向进行时,可以促进氮化硅薄膜中硅纳米颗粒的形成. X射线衍射分析和光致发光实验结果表明Si—Si键浓度增大时, 所形成的纳米硅颗粒的尺寸和浓度都随之增大.  相似文献   

9.
With the development of semiconductor industry, the chemical mechanical polishing technology has already became the main stream method of realize the surface global flatness. In order to understanding physical essence underlying this technology, the author carried out nanometer polishing experiment of silicon wafer using molecular dynamics (MD) simulation method. The simulation result shows that larger slurry grain generate much more vacancy, dislocation, larger residual stress and intensive plastic deformation than that of small one although the larger grain acquire better surface quality.  相似文献   

10.
This paper proposes a novel mathematical model for chemical mechanical polishing (CMP) based on interface solid physical and chemical theory in addition to energy equilibrium knowledge. And the effects of oxidation concentration and particle size on the material removal in CMP are investigated. It is shown that the mechanical energy and removal cohesive energy couple with the particle size, and being a cause of the non-linear size-removal rate relation. Furthermore, it also shows a nonlinear dependence of removal rate on removal cohesive energy. The model predictions are in good qualitative agreement with the published experimental data. The current study provides an important starting point for delineating the micro-removal mechanism in the CMP process at atomic scale.  相似文献   

11.
Etching and chemical mechanical polishing (CMP) experiments of the MgO single crystal substrate with an artificial scratch on its surface are respectively performed with the developed polishing slurry mainly containing 2 vol.% phosphoric acid (H3PO4) and 10-20 nm colloidal silica particles, through observing the variations of the scratch topography on the substrate surface in experiments process, the mechanism and effect of removing scratch during etching and polishing are studied, some evaluating indexes for effect of removing scratch are presented. Finally, chemical mechanical polishing experiments of the MgO substrates after lapped are conducted by using different kinds of polishing pads, and influences of the polishing pad hardness on removal of the scratches on the MgO substrate surface are discussed.  相似文献   

12.
We study the sensitivity of the steady-state electron transport that occurs within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient. An ensemble semi-classical three-valley Monte Carlo simulation approach is used for the purposes of this analysis. We find that for non-parabolicity coefficient selections beyond 0.4 eV −1, very few transitions to the upper energy conduction band valleys occur. This sensitivity to variations in the non-parabolicity coefficient has implications in terms of the form of the resultant velocity-field characteristics.  相似文献   

13.
利用origin确定实验中非线性函数的曲线关系   总被引:4,自引:0,他引:4  
实验教学中存在带有非线性函数规律的验证实验,利用传统方法作图处理再确定函数关系比较困难,而且计算量大,效率低。本文提供一种便捷的方法,通过先把非线性函数进行线性化处理再利用Microsoft origin作图软件处理分析实验数据,让处理分析数据及确定非线性函数关系式更直观,更简易。本文以验证纯电阻焦耳定律和测定放射性元素的平均寿命两个实验为例,分析幂函数及指数函数两类常见非线性函数线性拟合,介绍这种线性化与origin处理合一方法的便利性。本方法适合实验教学中学生处理和分析非线性函数的实验中的应用。  相似文献   

14.
In this research, degradation of Rodamine B in the presence of (hydrogen peroxide), (hydrogen peroxide + ultrasound), (hydrogen peroxide + aluminum oxide), (hydrogen peroxide + aluminum oxide + ultrasound with different ultrasound power), (hydrogen peroxide + iron oxide) and (hydrogen peroxide + iron oxide + ultrasound with different ultrasound power) were investigated at 25 °C. The apparent rate constants for the examined systems were calculated by pseudo-first-order kinetics. The results indicate that the rate of degradation was accelerated by ultrasound. The rate of degradation was increased by increasing power ultrasound. The efficiency of the (hydrogen peroxide + iron oxide + ultrasound) system for degradation of Rodamine B was higher than the others examined.  相似文献   

15.
Mesoporous carbon composites, containing nickel and nickel oxide nanoparticles, were obtained by soft-templating method. Samples were synthesized under acidic conditions using resorcinol and formaldehyde as carbon precursors, poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) triblock co-polymer Lutrol F127 as a soft template and nickel and nickel oxide nanoparticles, and nickel nitrate as metal precursors. In addition, a one set of samples was obtained by impregnation of mesoporous carbons with a nickel nitrate solution followed by further annealing at 400 °C. Wide angle X-ray powder diffraction along with thermogravimetric analysis proved the presence of nickel nanoparticles in the final composites obtained using nickel and nickel oxide nanoparticles, and Ni(NO3)2 solution. Whereas, the impregnation of carbons with a nickel nitrate solution followed by annealing at 400 °C resulted in needle-like nickel oxide nanoparticles present inside the composites’ pores. Low-temperature (−196 °C) nitrogen physisorption, X-ray powder diffraction, and thermogravimetric analysis confirmed good adsorption and structural properties of the synthesized nickel-carbon composites, in particular, the samples possessed high surface areas (>600 m2/g), large total pore volumes (>0.50 cm3/g), and maxima of pore size distribution functions at circa 7 nm. It was found that the composites were partially graphitized during carbonization process at 850 °C. The samples are stable in an air environment below temperature of 500 °C. All these features make the synthesized nickel-carbon composites attractive materials for adsorption, catalysis, energy storage, and environmental applications.  相似文献   

16.
Tungsten is widely used as deposited layer for the multi-level interconnection structures of wafers. The chemical composition of abrasive slurry plays an important role in chemical mechanical polishing (CMP) process. Removal of tungsten is driven by complex oxidation mechanisms between slurry components. The slurry for tungsten CMP generally contains oxidizer, iron catalyst, complexing agents and stabilizers in a pH adjusted solution of abrasive particles. Interaction between iron complex and H2O2 in the slurry is the main factor governing the chemical mode of material removal, oxidation potencies and kinetics.In this study, we investigate the effects of chemical additives in silica (SiO2)-based slurry on the removal rate of the tungsten film. Experiments were carried out in static batch as a preliminary study to understand and optimize chemical mechanisms in CMP-Tungsten process. Experiment designs were conducted to understand the influence of the chemical additives on the main performances of W-CMP. Used slurry, concentrated and retreated with chemical adjustments, is compared to the original slurry as a reference.  相似文献   

17.
《Ultrasonics sonochemistry》2014,21(3):1174-1181
The reduction of graphene oxide (GO) to graphene (rGO) was achieved by using 20 kHz ultrasound in l-ascorbic acid (l-AA, reducing agent) aqueous solutions under various experimental conditions. The effects of ultrasound power, ultrasound pulse mode, reaction temperature, pH value and l-AA amount on the rates of rGO formation from GO reduction were investigated. The rates of rGO formation were found to be enhanced under the following conditions: high ultrasound power, long pulse mode, high temperature, high pH value and large amount of l-AA. It was also found that the rGO formation under ultrasound treatment was accelerated in comparison with a conventional mechanical mixing treatment. The pseudo rate and pseudo activation energy (Ea) of rGO formation were determined to discuss the reaction kinetics under both treatment. The Ea value of rGO formation under ultrasound treatment was clearly lower than that obtained under mechanical mixing treatment at the same condition. We proposed that physical effects such as shear forces, microjets and shock waves during acoustic cavitation enhanced the mass transfer and reaction of l-AA with GO to form rGO as well as the change in the surface morphology of GO. In addition, the rates of rGO formation were suggested to be affected by local high temperatures of cavitation bubbles.  相似文献   

18.
Crystal morphology of thermoplastics is known to be strongly influenced by the presence of solid substrates like fibers or fillers. For wood, this interphase development is governed by the chemical composition of the thermoplastic and substrate. The crystallization of PP/MAPP blends was observed using polarized light microscopy and quantified using DSC and DMA. Techniques are presented to assess degree of crystallinity and temperatures associated with the onset (T o) and maximum rate (T c) of crystallization using DMA. Strain history of the specimen during crystallization was evaluated and does not significantly influence either T o or T c. Crystallization temperatures of PP as assessed using DSC or DMA increase with the addition of MAPP or the presence of wood. Values for T c are higher when measured by DMA than DSC. This difference appears to be related more to the relative interfacial dominance in the specimens, rather than to an inherent difference between techniques.  相似文献   

19.
Chemical dissolution of the barrier layer of porous oxide films formed on aluminum foil (99.5% purity) in the 4% phosphoric acid after immersion in 2 mol dm−3 sulphuric acid at 50 °C has been studied. The barrier layer thickness before and after dissolution was determined using a re-anodizing technique. A digital voltmeter with a computer system was used to record the change in the anode potential with re-anodizing time. It has been found that the barrier layer material may consist of two or three regions according to the dissolution rate. The barrier oxide contains two layers at 35 V: the outer layer with the highest dissolution rate and the inner layer with low dissolution rate. The barrier oxide contains three layers at 40 V and above it: the outer layer with high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with low dissolution rate. It has been shown that there is a dependence of the dissolution rate on the surface charge of anodic oxide film. Annealing of porous alumina films for 1 h at 200 °C leads to disappearance of layers with different dissolution rates in the barrier oxide. We explained this phenomenon by the absence of the space charge in the barrier oxide of such films.  相似文献   

20.
陶向明  徐小军  谭明秋 《物理学报》2002,51(11):2602-2605
用含有非球对称修正的FPLMTO和LDA+UDFT,LDA+USIC研究了NiO的电子结构,发现由于非球对称势场的引入,导致了占据的3d轨道eg分量的轨道有序化.结果表明在这一类复杂的强关联电子中,原子球内非球对称性多极势场对电子结构的影响已经比较明显:除了上述的轨道有序化以外,eg分量的位置下移,宽度明显变窄,呈现局域化的趋势;两种不同LDA+U方法计算得出的电荷转移能隙分别为337eV(DFT)和25eV(SIC).同时发现在NiO中,上、下Hubbard带实际上是由占据的和非占据的3deg轨道构成,3dt2g轨道和O2p轨道的杂化带具有较大的带宽,因而也具有一定的巡游特性.结果表明在NiO中有特征明显的3d电子轨道有序化.通过研究得出结论:在NiO这一类体系的电子结构计算中,势场的非球对称性部分和球间区势场的作用,以及轨道极化等因素都应该恰当地处理 关键词: 关联电子系统 过渡金属氧化物 电子结构  相似文献   

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