A Novel W-band Microstrip Integrated Avalanche Diode High Order Frequency Multiplier

A W band microstrip integrated high order frequency multiplier based on avalanche diode is proposed. The property of avalanche high order multiplication mode is analyzed based on physical operation mechanism of avalanche diode. According to the harmonics impedance model of avalanche diode, the microstrip integrated multiplier is designed, fabricated and measured. Output power of 5.78 mW has been obtained at output frequency of 94.5 GHz with 15th multiplication order and the phase noise is -90 dBc/Hz and -95 dBc/Hz at 10 KHz and 100 KHz offset. Good results at 13th and 17th multiplication order are also obtained.     

A W-band Frequency Source with Low Spurs and Low Phase Noise

A W-band millimeter wave frequency source is developed by frequency multiplier chain and injection locking. The referenced crystal oscillator (CO) signal 120 MHz is multiplied 400 times to output 48 GHz signal. Then, it is used as a referenced source of fundamental-wave injection-locked harmonic Gunn oscillator with output power more than 10 mW at 96 GHz and spurious output less than −65 dBc. The measured phase noise is −97 and −105 dBc/Hz at 10 kHz and 200 kHz offset, respectively. At last, the influence of the flicker noise, provided by the frequency multipliers and amplifiers, is analyzed.     

The W-Band High Order Avalanche Diode Frequency Multiplier

The high degree nonlinearity properties of avalanche diode render itself suitable for high order frequency multiplication in a single stage. This paper first analyzes the mechanism of multiplication mode, and introduces the principle of high order frequency multiplier. In experiment, the multiplier has achieved maximum 7 dBm output power and 19 dB conversion loss at the output frequency of 94.5 GHz with 15th multiplication order.     

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF(radio frequency)output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.     

Fabrication and modulation characteristics of InGaAsP/InGaAsP MQW DCPBH lasers at λ ∼ 1.57 μm

InGaAsP/InGaAsP multiple-quantum-well (MQW) double-channel planar-buried heterostructure (DCPBH) lasers emitting at λ∼ 1.57 μm were fabricated by optimizing the epitaxial growth with material characterization. At 25 °C (85 °C), a 1.8-μm-wide and 300-μm-long antireflectivity/high reflectivity coated laser exhibits a threshold current of 8 mA (23 mA) and a slope efficiency of 0.34 mW/mA (0.24 mW/mA) in continuous-wave mode (cw) as a result of the optimized thickness of the p-InP filling layer in the PBH structure with p-n-p-n current blocking layers. The maximum cw output power was approximately 20 mW at 25 °C, which was reduced to 17 mW at 85 °C. The peak wavelength varied from 1572 nm at 25 °C to 1602 nm at 100 °C for a fixed output power of 5 mW, indicating a temperature coefficient of ∼ 0.4 nm/K. The resonance frequency in the small-signal modulation response of devices depends on the etching depth of the U-shaped double channel; it increases from 0.4 GHz without channel etching to 4.3 GHz with 7-μm-thick etching. The full-width at half maximum values in the horizontal and vertical far-field patterns were approximately 24.5° (25.2°) and 29.4° (30.1°), respectively, at 25 °C (85 °C). PACS 42.55.Px; 73.61.Ey; 81.05.Ea     

A frequency doubler for 200 GHz with a planar Schottky varactor

A frequency doubler for 200 GHz utilising a planar surface channel Schottky varactor was designed, constructed and tested. The doubler employes novel split-waveguide mount design with two sliding backshorts at both input and output waveguides. The theoretical maximum efficiency of the doubler is 44.0 % with input power level of 32 mW and the maximum output power is 16.5 mW with input power level of 50 mW. The measured maximum efficiency of the doubler was 7.1 % and the maximum output power was 2.6 mW     

A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

The left-handed nonlinear transmission line(LH-NLTL) based on monolithic microwave integrated circuit(MMIC) technology possesses significant advantages such as wide frequency band,high operating frequency,high conversion efficiency,and applications in millimeter and submillimeter wave frequency multiplier.The planar Schottky varactor diode(PSVD) is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component.The design and the fabrication of the diode for such an application are presented.An accurate large-signal model of the diode is proposed.A 16 GHz-39.6 GHz LH-NLTL frequency doubler using our large-signal model is reported for the first time.The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz,and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm.The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.     

8字形主被动锁模掺Er3+光纤激光器

在理论上分析了利用非线性光学环形镜作为等效可饱和吸收体压缩脉冲进行锁模的物理机制。利用8字形主被动混合锁模的结构在调制频率2．498749GHz下，在1．543μm处获得了12ps的锁模脉冲输出，对应谱宽0．22nm，时间脉宽积0．33。在抽运功率50mW情况下，输出脉冲平均功率3．715mW。在调制频率2．499344GHz、2．499114GHz和2．498999GHz时分别并获得了2～4阶幅度较为均衡的有理数谐波锁模脉冲序列。     

A CMOS Low-Power Optical Front-End for 5 Gbps Applications

In this paper, a new low-power optical receiver front-end is proposed in 90 nm CMOS technology for 5 Gb/s AApplications. However, to improve the gain-bandwidth trade-off, the proposed Trans-Impedance Amplifier (TIA) uses an active modified inverter-based topology followed by a common-source amplifier, which uses active inductive peaking technique to enhance the frequency bandwidth in an increased gain level for a reasonable power consumption value. The proposed TIA is analyzed and simulated in HSPICE using 90 nm CMOS technology parameters. Simulation results show a 53.5dBΩ trans-impedance gain, 3.5 GHz frequency bandwidth, 16.8pA/√Hz input referred noise, and 1.28 mW of power consumption at 1V supply voltage. The Optical receiver is completed using three stages of differential limiting amplifiers (LAs), which provide 27 dB voltage gain while consume 3.1 mW of power. Finally, the whole optical receiver front-end consumes only 5.6 mW of power at 1 V supply and amplifies the input signal by 80 dB, while providing 3.7 GHz of frequency bandwidth. Finally, the simulation results indicate that the proposed optical receiver is a proper candidate to be used in a low-power 5 Gbps optical communication system.     

A novel millimeter wave gunn oscillator

It is described that the design, configuration and the performance of a novel millimeter wave Gunn oscillator stabilized by external cavity and temperature compensation in this paper. The frequency stability is 3.6 × 10⁻⁶ at 52 GHz over the teperature range from −10 to 50 °C. An output power of more than 100mW has been obtained in the frequency range from 51.5 to 52.8 GHz. This research work was supported by National Natural science Foundation and Electronic Industry Ministry of P. R. China.     

Active Microstrip Antenna with a Gunn Diode

Continuous electromagnetic emission from a Gunn diode built in a microstrip log-periodic antenna in the frequency range from 25 to 60 GHz is studied experimentally. The microstrip antenna was located on an insulating substrate with a thickness of about a quarter of the wavelength and with a metallized back side. It is shown that the output radiation power of such an antenna reaches 5 mW, which is over 50% of the power received from similar diodes in the waveguide cavity. The oscillation regime was varied from single-mode to noise-like, depending on the dielectric thickness and could be synchronized by external emission. Such a quasi-optical structure based on a Gunn diode is convenient for summing up powers from individual oscillators in an open resonator and is of great interest for the terahertz frequency band.     

Optical parametric oscillator with a 10-GHz repetition rate and 100-mW average output power in the spectral region near 1.5 mum

We demonstrate a synchronously pumped optical parametric oscillator that emits picosecond pulses at an ~1.55-mum wavelength with a repetition rate as a high as 10 GHz and as much as 100 mW of average power. It is pumped with a diode-pumped passively mode-locked 10-GHz Nd:YVO(4) laser. Because of its high repetition rate and its potential for ultrabroad tunability, this kind of system is useful for telecom applications. It should be scalable to 40 GHz and higher as required for future telecom networks.     

0.22THz宽带折叠波导行波管设计与实验

为了获得0.22THz宽带折叠波导行波管,对行波管的慢波结构和输入输出窗结构进行了宽带设计。通过理论分析和电磁仿真计算出合适的参数,使慢波结构在0.22THz工作点附近的色散曲线平坦,耦合阻抗变化小,模拟计算得到的慢波结构3dB带宽大于16GHz;通过对盒型窗结构及匹配段的优化计算,得到的输入输出结构在大于30GHz范围内S11参数小于-25dB。根据该设计进行了两轮制管和实验研究,得到了一支3dB瞬时带宽约8.8GHz,另一支3dB瞬时带宽大于12GHz的0.22THz折叠波导行波管,中心频率的峰值功率大于400mW。     

A 94/47 GHz frequency halver using a GaAs Gunn device

This paper describes the basic principles and the set up of a new kind of frequency halvers suited for millimeter wave applications. A Ga As Gunn-device is used to act like a nonostable multivibrator having a hold time adequate to the domain transit time T_t of the Gunn-device.In a certain frequency range depending on the transit frequency f_T=1/T_T, bias voltage and circuit parameters a harmonic wave synchronized fundamental/2nd harnonic mode oscillator is able to perform as a frequency halver. An input power of only 1mW is sufficient to achieve a bandwidth of 5 GHz respectively 2.5 GHz centered around 94 GHz respectively 47GHz. Since the output power is 50 mW at fundamental frequency f_F, this halver offers 17dB conversion gain.     

Cavity enhanced cw stimulated Brillouin scattering in a fused silica plate

We have observed cavity enhanced stimulated Brillouin scattering (SBS) in a high finesse optical ring resonator. Brillouin scattering occurs in a fused silica plate placed in the focus of the light beam inside the cavity. The frequency spacing of the Brillouin scattered wave relative to the incident beam at 23.5 GHz has a linewidth of less than 500 Hz. In preliminary experiments we extracted a scattered optical power of 25 mW from the resonator. Possible applications are discussed.     

397 GHz斜注管互作用系统的设计模拟

斜注管是返波振荡器的一种，通过电子注的倾斜，电子距离慢波结构更近，高频场更强，耦合阻抗和互作用效率更高，显著增加输出功率。对带状注斜注管的互作用系统进行了设计，并首次将双排齿慢波结构应用于斜注管。利用电磁模拟软件和3D粒子模拟软件对设计的斜注管的色散曲线和场分布进行了分析，并对其注-波互作用进行了模拟，可以得到大于100 mW的输出功率以及50 GHz的调谐带宽。输出功率在370.5 GHz频点处处达到峰值2.3 W，电子注电压7.0 kV，注电流120 mA，聚焦磁场1.0 T。     

Technique of Broadband Measurements of Frequency Conversion Efficiency for Each Harmonique in Frequency Multipliers up to Terahertz Range

The paper describes technique of quantitative analysis of a millimeter- and submillimeter-wave range multipliers performance in particular the measurement of the frequency conversion efficiency. The output power on each harmonic produced by the multiplier can be measured separately without any changes in the setup even in the case of simultaneous emission of all harmonics including the fundamental in a frequency range up to 1 THz and well above. The measuring technique primarily developed for high resolution microwave spectroscopy is based on absorption of radiation in spectral lines of rarefied sample gas and photo-acoustic method of the absorption detection. Sensitivity independence of the detection method on frequency and well known spectral parameters of the lines provide the technique with broadbandness, high spectral resolution and power measurement reliability. Principal limits of measurable radiation power may vary from nanowatts up to hundreds of watts. The technique permits real time operation convenient, e.g., for multiplier tuning. Practical examples include measurements of harmonic generation efficiency of multipliers of 78-118 GHz fundamental frequency range, and power measurement up to 6-th harmonic of 230 GHz fundamental radiation of phase locked Backward Wave Oscillator (BWO).     

Multi parameter optimization of Raman Fiber Amplifier using genetic algorithm for S band dense wavelength division multiplexed system

A simple genetic algorithm is implemented to perform multi parameter optimization of Raman Fiber Amplifier for 100 channel S band dense wavelength division multiplexed system at 25 GHz interval. A cost effective system using single Raman pump is investigated aiming at maximum average gain. The single counter propagating pump is optimized to frequency of 211.528 THz and 652.93 mW power level with optimum Raman fiber length of 44.064 Km. There is evidence to show that the optimum solution presents a small gain variation (less than 3 dB) over an effective bandwidth covering 197–199.475 THz. The optimized configuration enabled an adequate system performance in terms of acceptable Q-factor (19.52 dB) and BER (1.46 × 10⁻²¹).