新型光催化材料石墨炔-TiO2的第一性原理研究

采用基于色散矫正密度泛函理论的第一性原理方法,研究石墨炔和石墨烯对TiO2光催化性能提高的机理.通过研究发现在石墨炔-TiO2(101)复合物中,石墨炔和TiO2(101)间相互作用较强,TiO2(101)表面上的O原子和其top位的C原子形成离域性强的C—O共价键.电子密度,电子差分密度和Mulliken电荷的计算结果显示,石墨炔复合TiO2(101)晶面更有利于电子在界面间的转移,并减低电子-空穴的复合率.通过对电子结构的分析发现,在石墨炔-TiO2(101)复合物的带隙中引入了多条杂质能级,而石墨烯-TiO2(101)复合物的带隙中没有杂质能级的出现.杂质能级能够为光激发时电子的跃迁提供辅助平台作用,有利于光催化性能的提高.同时石墨炔-TiO2(101)复合物的价带位置比石墨烯-TiO2(101)复合物更低,说明其氧化能力更强,有利于其光催化性能的提高.     

CoFeOx/MoO2准平行纳米阵列电极的析氢性能

利用CoFe层状双金属氢氧化物(CoFe LDH)准平行纳米片阵列作为载体前驱体,通过原位负载及煅烧方式,实现了含有氧空位的MoO₂纳米颗粒在纳米片阵列表面的生长。电化学研究结果表明,所得CoFeO_x/MoO₂纳米阵列电极具有高析氢反应(HER)催化活性。该电极在10和1 000 mA·cm^-2时的HER过电位分别为40和217 mV。在50 mA·cm^-2的电流密度下,该电极可以稳定运行125 h。     

Ni离子掺杂锐钛矿相TiO2体系的第一性原理研究

采用自旋密度泛函理论的第一性原理方法并结合晶体配位场理论,研究了Ni离子掺杂锐钛矿相TiO₂体系（Ni_xTi_1-xO₂;Ni_xTiO₂）的几何结构、缺陷形成能、电子结构以及磁性特征等问题。结果表明：实验上发现的有关Ni掺杂TiO₂体系的很多矛盾,如：晶粒体积的增减、掺杂Ni离子的不同价态、吸收光谱带边移动方向和体系磁性特征的差异等问题都可归因于Ni离子掺杂类型的不同（Ni_Ti;Ni_in）。分析表明,不同的Ni离子掺杂类型导致所成Ni-O键的键长和电荷布居不同,从而使Ni离子呈现不同的价态,这也是体系宏观电学和磁学性能差异的根本原因。形成能计算表明,通过控制Ni-TiO₂晶体生长过程中的氧环境,可以人为的控制Ni离子的掺杂类型。     

Ag/Ag2MoO4/Bi2MoO6复合光催化剂的制备及其光催化性能

采用水热、化学沉积和原位光还原的方法成功制备了新型Ag/Ag₂MoO₄/Bi₂MoO₆三元复合光催化剂。通过X射线粉末衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和紫外可见漫反射光谱(UV-Vis DRS)等技术对材料的组成、形貌、光吸收特性和光电化学性能等进行系统分析。以四环素为目标污染物,研究Ag/Ag₂MoO₄/Bi₂MoO₆在可见光下的光催化性能。研究结果表明,相比于纯Ag₂MoO₄和Bi₂MoO₆,Ag的表面等离子体共振(SPR)效应显著拓宽了催化体系对可见光的吸收能力及响应范围。当Ag₂MoO₄理论负载量(质量分数)为24.6%时,Ag/Ag₂MoO₄/Bi₂MoO₆复合材料在20 min内可将四环素完全降解,且5次循环使用后仍保持较高的催化活性,表现出良好的循环稳定性。     

硼掺杂单层MoSi2N4锂离子吸附与扩散行为的第一性原理研究

采用平面波超软赝势方法研究了硼掺杂单层MoSi₂N₄的锂离子吸附与扩散行为。建立了替换位、间隙位、吸附位硼掺杂单层MoSi₂N₄三类物理模型（共6种构型）。结果表明：硼原子替换表面氮原子的构型最为稳定,该构型下的锂离子吸附能在-1.540~-1.910 eV之间。通过分析电子密度差分图,可知硼掺杂引起MoSi₂N₄表面的电荷重新分布,即硼与氮获得了来自锂离子的电子转移,导致锂离子在其表面吸附能增加。比较锂离子在硼掺杂MoSi₂N₄表面的吸附能,推断其扩散路径为D→F,扩散势垒为0.077 eV,表明锂离子在该表面具有较高的脱嵌速率。     

焙烧气氛对二甲醚低温选择氧化MoO3-SnO2催化剂结构及性能的影响

采用共沉淀法制备了Mo/Sn物质的量比为1：3的MoO₃-SnO₂催化剂,考察了焙烧气氛（O₂、air、N₂和H₂）对催化剂结构及二甲醚（DME）低温氧化制甲酸甲酯（MF）性能的影响。结果表明,在O₂中焙烧的催化剂上DME转化率高达25.10%,MF选择性为72.21%,催化剂具有较高的反应活性。而在H₂中焙烧催化剂上DME转化率仅为7.01%,MF选择性为75.82%。不同气氛焙烧催化剂上DME转化率由大到小的顺序：O₂> air> N₂> H₂。采用XRD、Raman、XPS及ESR等对催化剂进行深入表征。结果表明,共沉淀制备Mo1Sn3催化剂中钼物种以高分散MoO_x形式存在。O₂中焙烧催化剂表面Mo=O及存在于Mo-Sn界面处五配位钼氧化物中Mo⁵⁺含量均高于其他三种催化剂,即低聚态MoO_<em>x末端Mo=O可能是反应活性位点之一,五配位钼氧化物中Mo⁵⁺的存在有利于催化剂活性的提高,也有助于MF的生成。结合in suit DRIFTS证实了吸附于Mo⁵⁺上的CH₃O,在催化剂表面Mo=O作用下氧化为HCHO后与另一分子CH₃O耦合为MF。     

Cr掺杂Cu2O的光催化性质的第一性原理研究

采用第一性原理计算的方法,研究了不同浓度及不同位置Cr掺杂Cu₂O体系的缺陷形成能、电子结构和可见光区域的光催化性质及产生机理。结果表明,本征Cu₂O显示半导体特性,在可见光区域吸收很弱;不同浓度、不同位置的Cr掺杂体系均是稳定的,显示金属特性。与本征Cu₂O相比,随着Cr掺杂浓度的增大,体系在可见光范围内的吸收峰均有不同程度的增强,并且两个Cr原子近邻掺杂时可见光区域的吸收系数最大,光催化效率最强。态密度分析发现,Cr掺杂体系在可见光范围的吸收主要由Cr 3d态电子的带内跃迁产生;不同掺杂浓度和结构构型主要影响材料在长波长段的物理性质,而对短波长段的性质影响很小。因此,通过增大Cr掺杂浓度及调控掺杂位置可以提高Cu₂O在可见光区域的光催化效率,推动Cu₂O在光催化方面的发展。     

MoO3/Al2O3催化氧化选择性合成亚砜

采用浸渍法制备了不同负载量的MoO3/Al2O3催化剂,讨论了MoO3,Al2O3和MoO3/Al2O3负载的催化剂作用下,利用H2O2进行硫醚氧化制亚砜的反应.结果显示MoO3/Al2O3催化剂负载量为20%时催化活性最高,原料转化率达100%,且没有副产物生成.将该方法应用到兰索拉唑前体的氧化反应中,收率达到80%.催化剂重复使用6次不失活.     

CuF2/MoO3/C复合正极的电化学阻抗谱研究

采用球磨方法制备了CuF2/MoO3/C复合材料电极,利用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、恒流充放电、循环伏安(CV)和电化学阻抗谱(EIS)等方法表征与观察复合材料的结构与形貌,测试了电极的电化学性能.结果表明,球磨CuF2和MoO3晶粒的尺寸为200～300 nm.CuF2/MoO3/C复合电极10 mA.g-1电流密度首次放电容量为647 mAh.g-1,但随之复合材料循环寿命迅速衰减.循环伏安曲线首次放电,2.2 V左右出现了一个还原峰,第2、3周期该还原峰电位升至3.2 V左右.CuF2/MoO3/C复合电极的Nyquist图由高、中频区两个半圆串接和一条斜线组成.放电过程,高频区半圆相应于锂离子扩散多层SEI膜,还与电极材料与集流体的接触有关;中频区半圆与CuF2和MoO3及C的肖特基接触有关;低频区斜线反映扩散传递过程.CuF2/MoO3/C电极电荷传递阻力较大,这可能也是CuF2/MoO3/C电极容量较快衰减的原因.     

In2O3电子结构与光学性质的第一性原理计算

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 计算了In2O3电子结构和光学线性响应函数, 系统研究了In2O3电子结构与光学性质的内在关系. 利用计算的能带结构和态密度分析了带间跃迁占主导地位的In2O3材料的能量损失函数、介电函数、反射图谱, 根据电荷密度差分图分析了In2O3材料的化学和电学特性. 研究结果表明In2O3光学透过率在可见光范围内高达85%, 可作为优异的透明导电薄膜材料. 同时, 计算结果为我们制备基于In2O3透明导电材料的设计与大规模应用提供了理论依据, 也为监测和控制这一类透明导电材料的生长过程提供了可能性.     

Calorimetric study of high-pressure polymorphs of Li2WO4 and Li2MoO4

Heats of transition among the Li₂WO₄ polymorphs, Li₂WO₄I (phenacite-type structure), Li₂WO₄II, Li₂ WO₄III, and Li₂WO₄IV, and that between Li₂MoO₄ (phenacite) and Li₂MoO₄(spinel) were measured by transposed temperature drop calorimetry. The heats of fusion of Li₂WO₄I and Li₂MoO₄(ph) were also obtained. Using these data, the phase boundaries among the polymorphs of Li₂WO₄ and of Li₂MoO₄ were calculated. The calculated phase diagrams were compared with those reported previously. They agree well for Li₂WO₄ but show significant discrepancies, perhaps related to problems in attaining equilibrium at lower temperature, for Li₂MoO₄.     

H2分子在Mg3N2表面吸附的第一性原理研究

采用第一性原理方法,通过计算表面能确定Mg₃N₂（011）为最稳定的吸附表面,分别研究了H₂分子在Mg₃N₂（011）三种终止表面的吸附性质.研究发现H₂分子平行表面放置更有利于吸附,表面能最低的终止表面Model Ⅱ上吸附H₂分子最稳定,主要存在三种化学吸附方式：第一种吸附方式,H₂分子解离成2个H原子分别吸附在N原子上形成双NH基,这是最佳吸附方式;此时H₂分子与Mg₃N₂表面间主要是H原子的1s轨道和N原子的2s、2p轨道发生作用,N-H之间为典型的共价键.第二种吸附方式中H₂分子部分解离,两个H原子吸附在同一个N原子上形成NH₂基.第三种吸附方式中H₂分子解离成两个H原子,一个H原子和表面N原子作用形成NH基,另一个H原子和表面Mg原子作用形成MgH结构.三种吸附方式不存在竞争关系,形成双NH基的吸附方式反应能垒最低,最容易发生.除此之外H₂还能以分子的形式吸附在晶体表面,形成物理吸附.     

First Principles Study on FeAs Single Layers

FeAs^- single layer is tested as a simple model for LaFeAsO and BaFe2As2 based on firstprinciples calculations using generalized gradient approximation （GGA） and GGA＋U. The calculated single-layer geometric and electronic structures are inconsistent with that of bulk materials. The bulk collinear antiferromagnetic ground state failed to be obtained in the FeAs^- single layer. The monotonous behavior of the Fe-As distance in z direction upon electron or hole doping is also in contrast with bulk materials. The results indicate that, in LaFeAsO and BaFe2As2, interactions between FeAs layer and other layers beyond simple charge doping are important, and a single FeAs layer may not represent a good model for Fe based superconducting materials.     

LiFe(MoO4)2, LiGa(MoO4)2 and Li3Ga(MoO4)3

The structures of lithium iron dimolybdate, LiFe(MoO₄)₂, and lithium gallium dimolybdate, LiGa(MoO₄)₂, are shown to be isomorphous with each other. Their structures consist of segregated layers of LiO₆ bicapped trigonal bipyramids and Fe(Ga)O₆ octahedra separated and linked by layers of isolated MoO₄ tetrahedra. The redetermined structure of trilithium gallium trimolybdate, Li₃Ga(MoO₄)₃, shows substitional disorder on the Li/Ga site and consists of perpendicular chains of LiO₆ trigonal prisms and two types of differently linked Li/GaO₆ octahedra.     

二氧化钼-碳复合涂层的电化学性能研究

应用简单的刮涂法以及真空煅烧可制备出承载在铜箔表面的二氧化钼-碳（MoO₂-C）复合涂层,并对样品的形貌、成分、结构和电化学性能进行分析.结果表明,该复合涂层由单斜结构的MoO₂纳米粒子和无定形碳组成.一些MoO₂纳米粒子承载在碳基体表面,其尺寸为5~30nm;一些MoO₂纳米粒子包覆在碳基体内部,其尺寸约为5nm. MoO₂-C复合涂层为多孔结构,其孔隙尺寸为1~3nm.该复合涂层与铜箔结合紧密,界面处没有裂纹.承载在铜箔表面的MoO₂-C复合涂层的比容量高、循环和倍率性能良好.在100mA·g^-1电流密度下,该负极经过100次循环后的比容量为814mAh·g^-1,在循环过程中没有出现明显的容量衰减,即使在5000mA·g^-1的高电流密度下,其比容量仍有188mAh·g^-1.     

First Principles Study of H-insertion in MnO2

We present an extensive First Principles study on proton intercalation in the pyrolusite and ramsdellite forms of MnO₂. It is shown that protons are always covalently bonded to an oxygen atom in MnO₂. In ramsdellite, the proton prefers the pyramidal oxygen to the planar coordinated oxygen as that site is farther away from the Mn cations. In both pyrolusite and manganite, the octahedral sites are unstable, but the two local minima on each side of the octahedron are connected by a barrier of only about 25 meV, so that protons may rapidly exchange between these sites. Proton diffusion in pyrolusite occurs by hopping along the 1×1 open tunnels with an activation barrier that increases from about 575 meV at the beginning of discharge to about 1eV at high H concentration. Diffusion in ramsdellite takes place along the 2×1 open tunnels and occurs with much lower activation energy (respectively, 200 and 400 meV, at low and high H concentrations). Introduction of twinning defects has a large adverse effect on the proton diffusivity. Results indicate that direct H-H interactions are not that significant compared to oxygen-mediated-interactions. Experimental and calculated ramsdellite discharge curves deviate significantly at early stages of the reduction process. The calculations on defected structures indicate that a significant source of this discrepancy may be due to presence of proton-compensated Mn vacancies in real MnO₂, which create local sites with higher discharge potential. The calculations suggest that the ordered phase, observed in experiments at mid-reduction (groutellite, MnOOH_0.5), is due to the lattice remaining coherent during intercalation.     

A First Principles Study of Hydrogen Storage in NaAlH4‐Related Complex Hydrides

We have applied first principles computations to predict the properties of complex hydrides related to the alanate NaAlH₄, a very promising class of systems for reversible hydrogen storage. The effect of partial substitution on the Na site (by Li or K), and on the Al site (by B or Ga) on the thermodynamic stability of NaAlH₄ and its decomposition product Na₃AlH₆ is investigated and evaluated by means of qualitative van't Hoff plots. From the calculated results we infer that the most promising improved hydrides are Na_1?xLi_xAl_1?yB_yH₄, obtained by a double substitution on the Na and on the Al sites of NaAlH₄.     

First Principles Study of Al-Li Intermetallic Compounds

The structural properties, heats of formation, elastic properties, and electronic structures of four compositions of binary Al-Li intermetallics, Al₃Li, AlLi, Al₂Li₃, and Al₄Li₉, are ana-lyzed in detail by using density functional theory. The calculated formation heats indicate a strong chemical interaction between Al and Li for all the Al-Li intermetallics. In partic-ular, in the Li-rich Al-Li compounds, the thermodynamic stability of intermetallics linearly decreases with increasing concentration of Li. According to the computational single crystal elastic constants, all the four Al-Li intermetallic compounds considered here are mechani-cally stable. The polycrystalline elastic modulus and Poisson's ratio have been deduced by using Voigt, Reuss, and Hill approximations, and the calculated ratios of bulk modulus to shear modulus indicate that the four compositions of binary Al-Li intermetallics are brittle materials. With the increase of Li concentration, the bulk modulus of Al-Li intermetallics decreases in a linear manner.