共查询到18条相似文献,搜索用时 78 毫秒
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实验研究表明,SnO2薄膜经过退火处理后其光致发光谱有明显的变化。在氧和氮两种不同气氛中进行热处理,其变化也有差异。这种变化主要是由于SnO2膜中氧空位和自由载流于浓度变化所致。 相似文献
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采用射频磁控溅射法溅射SnS_2靶,在玻璃基片上以不同射频功率和氩气压强制备一系列薄膜样品,研究了不同工艺条件对薄膜特性的影响。利用X射线衍射(XRD)和拉曼光谱(Raman)对薄膜样品的晶体结构和物相进行表征分析。利用X射线能量色散谱(EDS)、紫外-可见-近红外分光光度计(UV-Vis-NIR)对SnS_2薄膜的化学组分、光学特性等进行测试,计算或分析了SnS_2薄膜样品的组分原子比、光学常数和光学带隙。结果表明:制备SnS_2薄膜的最佳工艺条件为射频功率60 W、氩气压强0.5 Pa。在该条件下,所制备的SnS_2薄膜沿(001)晶面择优取向生长,可见光透过率和折射率较高,消光系数较小,直接带隙为2.81 e V。在此基础上,进一步制备了n-SnS_2/p-Si异质结器件。器件具有良好的整流特性及弱光伏特性,反向光电流随光照强度的增加而增大。器件的光电导机制是由SnS_2禁带中陷阱中心的指数分布所控制。 相似文献
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实验采用射频磁控溅射法在玻璃衬底上沉积了ZnS多晶薄膜,研究了沉积气压、退火温度和衬底温度对ZnS薄膜质量的影响.利用X射线衍射(XRD)分析了薄膜的微结构,并计算了内应力值.通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了Urbach能量和禁带宽度.利用扫描电子显微镜(SEM)观察了薄膜的表面形貌.结果表明: 衬底温度为室温时沉积的ZnS薄膜具有较大的压应力,并且内应力值随着工作气压增大而增大,在300 ℃下进行退火处理后内应力松弛,衬底温度为350 ℃时制备的ZnS薄膜内应力小,透过率高,经300 ℃退火处理后结晶质量有所提高.
关键词:
ZnS薄膜
射频磁控溅射
内应力 相似文献
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常温下,采用射频磁控溅射法在有机的柔性衬底上制备出了SnO2:Sb透明导电膜,并对薄膜的结构和光电性质进行了研究.制备的样品为多晶薄膜,并且保持了二氧化锡的金红石结构.性能良好的薄膜电阻率为6.5×10-3Ω·cm,载流子浓度为1.2×1020cm-3,霍耳迁移率是9.7cm2·V-1·s-1.薄膜在可见光区的平均透过率达到了85%.
关键词:
柔性衬底
SnO2:Sb透明导电膜
射频磁控溅射法 相似文献
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氮化硅薄膜因其耐腐蚀性、高温稳定性和良好的机械强度等优点,被广泛用作透射电子显微镜(TEM)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线光电子能谱仪(XPS)、能量色散X射线光谱仪(EDX)等的表征实验承载体。特别是,SiN可作为SEM观察时的低扰背景。然而SiN薄膜较差的荧光性制约了其进一步在荧光器件中的广泛应用。为了进一步提高SiN薄膜窗口的荧光效率,实验研究中采用了射频磁控溅射技术在SiNx薄膜衬底上成功制备出系列ZnO薄膜,并分别进行了氮气氛非原位退火和原位退火处理。然后利用原子力显微镜(AFM)、扫描电子显微镜(SEM)、拉曼光谱仪(Raman)对薄膜的微结构和光致发光(PL)性能进行了研究,并系统研究了所制备薄膜的发光情况。实验研究结果表明,镀膜后荧光强度普遍提升, 退火促进晶粒进一步熟化生长、结晶性能大幅提升、晶界减少,且退火方式对射频磁控溅射法制备的ZnO/SiN复合薄膜的微结构和发光性能有显著影响。与SiNx薄膜相比,未退火的ZnO/SiNx薄膜和N2气氛非原位退火的ZnO/SiNx薄膜在380 nm附近的带边本征发射强度分别提高了7.7倍和34.0倍以上。与非原位退火处理的薄膜相比,原位退火处理的ZnO/SiNx薄膜具有更多的氧空位缺陷,因此表现出更强的可见光波段PL强度,在425~600 nm的可见光波段表现出更高的光致发光能力。这些结果有助于优化氮化硅基ZnO荧光薄膜的制备参数。 相似文献
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The Antimony-doped tin oxide (SnO2:Sb) films have been prepared on glass substrates by RF magnetron sputtering method. The prepared samples are polycrystalline films with rutile structure of pure SnO2 and have preferred orientation of (1 1 0) direction. XRD measurement did not detect the existence of Sb2O3 phase and Sb2O5 phase; Sb ions occupy the site of Sn ions and form the substitution doping. An intensive UV-violet luminescence peak near 392 nm is observed at room temperature. Photoluminescence (PL) properties influenced by sputtering power and annealing for the SnO2:Sb films are investigated in detail and corresponding PL mechanism is discussed. 相似文献
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Structural and optical properties of zinc nitride films prepared by rf magnetron sputtering 总被引:2,自引:0,他引:2
Tianlin Yang Zhisheng Zhang MaoShui Lv Zhongchen Wu Shenghao Han 《Applied Surface Science》2009,255(6):3544-3547
Zinc nitride films were prepared on quartz substrates by rf magnetron sputtering using pure zinc target in N2-Ar plasma. X-ray diffraction (XRD) analysis indicates that the films just after deposition are polycrystalline with a cubic structure and a preferred orientation of (4 0 0). X-ray photoelectron spectroscopy (XPS) analysis also confirms the formation of N-Zn bonds and the substitution incorporation of oxygen for nitrogen on the surface of the films. The optical band gap is calculated from the transmittance spectra of films just after deposition, and a direct band gap of 1.01 ± 0.02 eV is obtained. Room temperature PL measurement is also performed to investigate the effect of defect on the band gap and quality of the zinc nitride films. 相似文献
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Properties of ITO films prepared by rf magnetron sputtering 总被引:2,自引:0,他引:2
F. El Akkad A. Punnoose G. Prabu 《Applied Physics A: Materials Science & Processing》2000,71(2):157-160
Recently, a detailed study of the properties of ITO thin films deposited under various preparation conditions using the rf magnetron sputtering technique (from ITO target in pure Ar gas) has been undertaken in our laboratory. The effect of substrate temperature has been studied in a previous paper. Here the results of a study of the structural, electrical and optical properties of the ITO films with different thickness are presented. The figure of merit for the films, which is a measure of the quality of the films as transparent conductive layers for photovoltaic applications, has been evaluated. 相似文献
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Mingsong Wang Xiaonong Cheng Juan Yang 《Applied Physics A: Materials Science & Processing》2009,96(3):783-787
ZnO thin films were prepared by RF magnetron sputtering. The photoluminescence dependence on the growth ambient and annealing
temperatures and the atmosphere has been studied. Visible photoluminescence with blue, green, orange, and red emission bands
has been demonstrated by controlling the preparation conditions. Complete suppression of the visible emission bands was also
realized by annealing the O2-ambient-grown samples in N2 atmosphere at higher temperatures, which indicated the preparation of ZnO thin films with high optical quality. 相似文献
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W. Jo 《Applied Physics A: Materials Science & Processing》2001,72(1):81-84
Bismuth titanate, Bi4Ti3O12, thin films were grown on IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and microstructure of the films were characterized over
a wide range of oxygen mixing ratio (OMR) during deposition. X-ray fluorescence spectra reveal that the cation content of
the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by the oxygen content in the sputtering
atmosphere. Rutherford backscattering spectrometry measurements also show that oxygen content of the BTO film grown with an
OMR = 0.5is close to a stoichiometric phase. In addition, Bi–O bonding chemistry is studied by X-ray photoelectron spectroscopy.
Polarization vs. voltage loop shows that remnant polarization, Pr, is +12 μC/cm2.
Received: 26 November 1999 / Accepted: 26 November 1999 / Published online: 9 August 2000 相似文献
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Yinqiao Peng Jicheng Zhou Baoxing ZhaoXiaochao Tan Zhichao Zhang 《Applied Surface Science》2011,257(9):4010-4013
Silicon carbonitride (SiCN) thin films were deposited on n-type Si (1 0 0) and glass substrates by reactive magnetron sputtering of a polycrystalline silicon target in a mixture of argon (Ar), nitrogen (N2) and acetylene (C2H2). The properties of the films were characterized by scanning electron microscope with an energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectrometry and ultraviolet-visible spectrophotometer. The results show that the C2H2 flow rate plays an important role in the composition, structural and optical properties of the films. The films have an even surface and an amorphous structure. With the increase of C2H2 flow rate, the C content gradually increases while Si and N contents have a tendency to decrease in the SiCN films, and the optical band gap of the films monotonically decreases. The main bonds are Si-O, N-Hn, C-C, C-N, Si-N, Si-C and Si-H in the SiCN films while the chemical bonding network of Si-O, C-C, C-O, C-N, N-Si and CN is formed in the surface of the SiCN films. 相似文献