Antenna patterns of an open structure mixer at a submillimeter wavelength and of its scaled model

To verify the enhancement in sensitivity of a Schottky barrier diode using a 90° corner reflector at submillimeter wavelength a 651 scaled model of the open structure mixer was constructed and investigated at 2.8 cm wavelength.The results show clearly the advantage of a 90° corner reflector, the reality of the deviations for 45° and 60° corner reflectors found for submillimeter wavelengths, and the equality of the antenna patterns for a 90° corner reflector and a cat-eye (corner cube) reflector.     

A low noise heterodyne receiver for astronomical observations operating around 0.63 mm wavelength

A heterodyne receiver is described in which an InSb hot electron bolometer is used as a mixer. The local oscillator power is obtained by doubling the frequency of a backward wave oscillator. The receiver operates between 460 and 500 GHz (0.65–0.6 mm). Noise temperatures amount typically to 1000 K.     

Characteristics of InSb mixers and backward wave oscillators in a submm heterodyne receiver

In this paper some aspects of two of the most important components of a previously described submm heterodyne are discussed: the InSb mexer and the backward wave oscillator. The (known) properties of the InSb mixer and our method of fabrication will be briefly discussed. The aspect of matching this mixer to the waveguide is treated more extensively both in theory and practice. Finally the performance of InSb as a mixer at higher frequencies is briefly considered. Some properties of the backward wave oscillator which are of special relevance when using it in combination with an InSb mixer, have been measured and they are discussed in the last section.     

0.38 THz混频器关键器件设计和仿真优化

太赫兹混频器是太赫兹波收发系统中的关键器件,是将信号频率从一个量值变换为另一个量值的电路器件,其中肖特基二极管是太赫兹混频器中的核心器件,除了肖特基二极管以外,低频滤波器、本振端口等也属于太赫兹混频器中的关键器件。对0.38 THz混频器中的关键组件包括波导管、肖特基二极管、滤波器等在HFSS中进行了建模、仿真,最后通过对仿真结果的分析,实现了可以满足0.38 THz太赫兹混频器的各个关键模块的模型,通过这些模型实现了混频器整体的优化。     

Low-noise Quasioptical 2,0-mm and 1,5-mm Schottky mixer receivers

Quasioptical 2-mm and 1,5 mixer receivers for room temperature operation are described. Receivers incorporates polarization-rotationing dual-beam interferometers, used as antenna-heterodyn diplexer, waveguide Schottky diode mixers, carcinotron (BWO) and carcinitron with the frequency doubler, used as local oscillators (LO), and GaAs IF amplifiers. The best receiver noise temperatures are 600K (DSB) at 2,0-mm and 800K (DSB) at 1,5-mm wavelengths bands. The performance of these receivers is also discussed.     

Optimum coupling of a Gaussian beam to a corner reflector with a four-wavelength antenna

The coupling of a Gaussian radiation beam to a corner reflector with a four-wavelength long wire antenna was studied theoretically and experimentally. The antenna configuration in conjunction with a Schottky barrier diode is recently used widely as a fast submillimeter wave detector. The optimum angle focusing the radiation to the antenna has been obtained and is 11° (half-width at the 8.7dB points).     

Measured mixer noise temperature and conversion loss of a cryogenic Schottky diode mixer near 800 GHz

We accurately measured the noise temperature and conversion loss of a cryogenically cooled Schottky diode operating near 800 GHz, using the UCB/MPE Submillimeter Receiver at the James Clerk Maxwell Telescope. The receiver temperature was in the range of the best we now routinely measure, 3150 K (DSB). Without correcting for optical loss or IF mismatch, the raw measurements set upper limits ofT _M=2850 K andL _M=9.1 dB (DSB), constant over at least a 1 GHz IF band centered at 6.4 GHz with an LO frequency of 803 GHz. Correction for estimated optical coupling and mismatch effects yieldsT _M=1600 K andL _M=5.5 dB (DSB) for the mixer diode itself. These values indicate that our receiver noise temperature is dominated by the corner cube antenna's optical efficiency and by mixer noise, but not by conversion loss or IF mismatch. The small fractional IF bandwidth, measured mixer IF band flatness from 2 to 8 GHz, and similarly good receiver temperatures at other IF frequencies imply that these values are representative over a range of frequencies near 800 GHz.     

基于二极管精确电路模型的183 GHz分谐波混频器设计

针对亚毫米波混频二极管管对电路模型不够精确的问题,采用场路结合协同分析,将进出二极管的频率信号分类处理,建立了一种应用于亚毫米波分谐波混频器电路的反向并联二极管对精确电路模型。基于获取的管对精确电路模型,建立了全局性的分谐波混频器电路的集总元件等效电路模型,设计并实现了一款183 GHz分谐波混频器。测试结果表明混频器在本振频率为92 GHz、功率为2 mW,射频频率176～192 GHz范围内,双边带变频损耗小于6.8 dB,等效噪声温度小于800 K,在182 GHz测得最小双边带变频损耗为4.9 dB,与仿真数据吻合较好。     

Noise and thermal properties of a submillimeter mixer with the SINS tunnel junction

In this work we present for the first time a low-noise submillimeter receiver with a mixer using Superconductor-Insulator-Normal metal-Superconductor (SINS) junctions. Junctions containing a normal metal layer may be free of the Josephson current and of the related perturbations of mixer operation specific for the standard SIS mixers. This SINS mixer quality is important for the application in the multibeam submillimeter receiver. The SINS mixer stability of operation and independence on the magnetic field have been confirmed in our experiment. Minimum SINS receiver noise in the 290 – 330 GHz band is about 135 K when the junction R_NC is about 30. Noise, conversion gain and thermal properties of the SINS mixer have been studied and compared with the SIS mixers. The limit of SINS mixer operation improvement is discussed at the end of the work.     

Detection of dust grains vibrations with a laser heterodyne receiver of scattered light

We present the results of measurement of grains vibrations under external action in gas and liquid with a laser heterodyne receiver of scattered radiation. For investigation of dynamic characteristics of particles we made the laser heterodyne receiver with sensitivity about 2×10⁻¹⁷ W/Hz and source of probing with radiation power 1 mW. In our pilot experiments, measurement of vibration amplitude of nanoparticles in gas (cigarette smoke) and microparticles in fluid (toothpaste in water) was made. We measured values of vibration amplitudes about 20–30 nm.     

Simulated performance of SIS and SIN junctions as heterodyne receivers in waveguide and open antenna mixer mounts

Tucker's quantum theory of mixing (in the 3-port approximation) is employed to calculate the gain over a wide range of frequencies of model mixers employing SIS and SIN junctions with both real and idealI–V characteristics. A comparison is made between the performance of junctions in waveguide and open antenna mounts. It is concluded that ideal junctions give gain 1.5 to 2 times higher than real ones, SIS junctions have gain approximately three times greater than otherwise similar SIN junctions, and that junction areas need to be typically three times smaller in open antenna structures to provide comparable gain to those in waveguide mounts.     

Theoretical performance of novel multipliers at millimeter and submillimeter wavelengths

A theoretical comparison of various low and high order multipliers for 200 GHz and 1 THz has been carried out. Novel diodes including single barrier varactors, barrier-intrinsic-n⁺ diodes and high electron mobility varactors are shown to have excellent theoretical performance, comparable or better than the conventional Schottky varactors for single and double diode frequency multipliers at millimeter and submillimeter wavelengths, whereas quantum well diodes, since they suffer from high resistive losses, are shown to be less attractive. In comparison to the conventional Schottky varactor, these new diodes have some potential advantages in their characteristics such as nonlinearity or a special symmetry. For future optimization some general comments on these advantages as well as other factors affecting multiplication is given.     

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes (SBDs) by using an n-Ga₂O₃/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga₂O₃, the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit (FOM) value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.     

Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes

This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor metal （MSM） structure by dieleetrophoresis and studying on its electrical characteristics by using current-voltage （Ⅰ - Ⅴ） measurements. An electronic model with two back to back Sehottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured Ⅰ - Ⅴ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.     

Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

In this paper,a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated.The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures,which can be achieved without increasing the process difficulty.The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios,and that by using the semi-SJ structure,specific on-resistance can be reduced without decreasing the softness factor.It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.     

Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

In this paper, a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.     

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

A vertical junction barrier Schottky diode with a high-$K$/low-$K$ compound dielectric structure is proposed and optimized to achieve a high breakdown voltage (BV). There is a discontinuity of the electric field at the interface of high-$K$ and low-$K$ layers due to the different dielectric constants of high-$K$ and low-$K$ dielectric layers. A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode (JBS), so the distribution of electric field in JBS becomes more uniform. At the same time, the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-$K$ dielectric layer and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN JBS with a specific on-resistance ($R_{\rm on, sp}$) of 2.07 m$\Omega\cdot$cm$^{2}$ and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure, resulting in a high figure-of-merit (FOM) of 8.6 GW/cm$^{2}$, and a low turn-on voltage of 0.6 V.     

复合漏电模型建立及阶梯场板GaN肖特基势垒二极管设计

准垂直GaN肖特基势垒二极管(SBD)因其低成本和高电流传输能力而备受关注.但其主要问题在于无法很好地估计器件的反向特性,从而影响二极管的设计.本文考虑了GaN材料的缺陷以及多种漏电机制,建立了复合漏电模型,对准垂直Ga N SBD的特性进行了模拟,仿真结果与实验结果吻合.基于此所提模型设计出具有高击穿电压的阶梯型场板结构准垂直GaN SBD.根据漏电流、温度和电场在反向电压下的相关性,分析了漏电机制和器件耐压特性,设计的阶梯型场板结构准垂直GaN SBD的Baliga优值BFOM达到73.81 MW/cm~2.