一种基于MMIC技术的宽带左手非线性传输线二次倍频器

本文首次报道了基于MMIC技术的左手非线性传输线宽带二次倍频器。理论上分析了左手非线性传输线的二次谐波产生原理。在GaAs半绝缘衬底上制作了4节左手非线性传输线,面积为5.4mm*0.8mm。当输入信号为20dBm时,该倍频器在26.4GHz处获得最大二次谐波输出功率为6.33dBm,对应的-6dB带宽为24GHz~43GHz。实验结果与仿真结果吻合良好。以低频放大器作为激励,该倍频器可用于低成本,有效的毫米波甚至THz信号源系统。     

Design of 20-44 GHz broadband doubler MMIC

This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz.This chip is composed of a single ended-into differential-out active Balun,balanced FETs in push-push configuration,and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power,and the fundamental frequency suppression is typically -20 dBc up to 44 GHz.The MMIC works at...     

Design of 20-44 GHz broadband doubler MMIC

This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a single ended-into differential-out active Balun, balanced FETs in push-push configuration, and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power, and the fundamental frequency suppression is typically -20 dBc up to 44 GHz. The MMIC works at VDD = 3.5 V, VSS = -3.5 V, Id = 200 mA and the chip size is 1.5 ×1.8 mm2.     

A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines

A broadband frequency doubler using left-handed nonlinear transmission lines(LH NLTLs) based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm~2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.     

A minaturized broad-band MMIC frequency doubler

A miniaturized broadband balanced MMIC (monolithic microwave integrated circuit) frequency double, composed of a common-gate FET and a common-source FET directly connected to each drain electrode, has been proposed and demonstrated. The doubler is designed and fabricated as a miniaturized function module using a conventional two-gate FET configuration, active trapping, and active impedance matching. The doubler design has been performed through phase error estimation, gate width optimization, and gate-source voltage optimization. The phase error estimation in a nonlinear condition has eliminated phase error compensation circuits. The fabricated chip size is only 0.5 mm×0.5 mm, which is about 1/10 the area of previously reported doublers. A conversion loss of 8-10 dB, a fundamental frequency suppression better than 17 dB, and an input return loss better than 8 dB are obtained in the output frequency range from 6 to 16 GHz. The broadband doubler as a miniaturized MMIC function module can be applicable to small-size oscillator MMICs and multifunction MMICs     

Ka频段PHEMT 1W功率单片放大器

设计制作了Ka频段高输出功率的单片功率放大器.基于河北半导体研究所的0.25μm栅长的75mm GaAsPHEMT工艺制作的三级功率放大器,芯片尺寸为19.25mm2(3.5mm×5.5mm).在32.5～35.5GHz的频率范围内,小信号线性增益大于16dB,带内平均1dB增益压缩点输出功率为29.8dBm,最大饱和输出功率为31dBm.     

Ka频段PHEMT 1W功率单片放大器

设计制作了Ka频段高输出功率的单片功率放大器.基于河北半导体研究所的0.25μm栅长的75mm GaAsPHEMT工艺制作的三级功率放大器,芯片尺寸为19.25mm2(3.5mm×5.5mm).在32.5～35.5GHz的频率范围内,小信号线性增益大于16dB,带内平均1dB增益压缩点输出功率为29.8dBm,最大饱和输出功率为31dBm.     

A Compact Ka-Band PHEMT MMIC Voltage Controlled Oscillator

A compact Ka-band monolithic microwave integrated circuit(MMIC) voltage controlled oscillator (VCO) with wide tuning range and high output power,which is based on GaAs PHEMT process,is presented.A method is introduced to reduce the chip size and to increase the bandwidth of operation.The procedure to design a MMIC VCO is also described here.The measured oscillating frequency of the MMIC VCO is 36±1.2GHz and the output power is 10±1dBm.The fabricated MMIC chip size is 1.3mm×1.0mm.     

紧凑型Ka波段PHEMT微波单片集成VCO

设计并流片制作了基于GaAs PHEMT工艺的Ka波段微波单片集成压控振荡器(MMIC VCO).该VCO具有紧凑、宽电调谐带宽及高输出功率的特点.提出了缩小芯片面积及增大调谐带宽的方法,同时还给出了设计MMIC VCO的基本步骤.该方法设计并流片制做的MMIC VCO的测量结果为:振荡频率为36±1.2GHz,输出功率为10士1dBm,芯片面积为1.3mm×1.0mm.     

A broadband 800 GHz Schottky balanced doubler

A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design utilizes two Schottky diodes in a balanced configuration on a 12 μm thick gallium arsenide (GaAs) substrate as a supporting frame. This broadband doubler (designed for 735 GHz to 850 GHz) uses a split waveguide block and has a relatively simple, fast, and robust assembly procedure. The doubler achieved ≈10% efficiency at 765 GHz, giving 1.1 mW of peak output power when pumped with about 9 mW of input power at room temperature     

A compact broadband MMIC sub-harmonic mixer using quasi-lumped transmission lines

A compact broadband monolithic microwave integrated circuit (MMIC) sub-harmonic mixer using an OMMIC 70 nm GaAs mHEMT technology is demonstrated for 60 GHz down-converter applications. The present mixer employs an anti-parallel diode pair (APDP) to fulfill a sub-harmonic mixing mechanism. Quasi-lumped components are employed to broaden the operational bandwidth and minimize the chip size to 1.5×0.77 mm². The conversion gain is optimized by a quasi-lumped 90° phase shift stub. Experimental results show that from 50 GHz to 70 GHz, the conversion gain varies between −12.1 dB and −15.2 dB with a LO power level of 10 dBm and 1 GHz IF. The LO-to-RF, LO-to-IF and RF-to-IF isolations are found to be greater than 19.5 dB, 21.3 dB and 25.8 dB, respectively. The second harmonic component of the LO signal is suppressed. The proposed mixer has an input 1 dB compression point of -2 dBm and exhibits outstanding figure-of-merits.     

一款GaAs PHEMT超宽带无源双平衡混频器MMIC

混频器是微波系统关键部件之一.微波通信系统的宽带化和小型化发展趋势对混频器性能提出更高要求.基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款超宽带无源双平衡混频器单片微波集成电路(MMIC).该混频器采用环形肖特基二极管结构和两个新颖的螺旋式平行耦合微带线巴伦结构,大大提高了混频器工作带宽,减小了芯片尺寸,提高了本振(LO)到射频(RF)端口的隔离度.在片探针测试结果显示该芯片在上、下变频模式下RF和LO工作频率均为2～ 22 GHz,中频工作频率为0～4 GHz,变频损耗≤11.5 dB,LO到RF端口隔离度≥37 dB,LO输入功率为15 dBm.芯片尺寸为1.7 mm×1.0 mm.     

A Ku band four-stage PHEMT 1W MMIC power amplifier

A successful development of a very high performance and reliable power PHEMT MMIC technology is reported. In this paper, a Ku-Band 1 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU application is demonstrated. This four-stage amplifier is designed to fully match for a 50 Ω input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.     

A 12-36GHz PHEMT MMIC balanced frequency tripler

A novel configuration of balanced frequency InGaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) tripler is proposed. A resonant LC filter is used to eliminate the fundamental frequency and a phase delay line is employed to suppress the second harmonic. The separation of the independent phase shifters makes the tripler more compact and flexible. The conversion loss of the tripler operating from 12 to 36GHz is less than 9.4dB at 9-dBm input power. As compared to the third-harmonic frequency, the fundamental frequency is suppressed more than 21.4dB while for the second harmonic is more than 22.3dB at 36GHz.     

A unique MMIC broadband power amplifier approach

A broadband monolithic microwave integrated circuit (MMIC) power amplifier design approach is described using lossy matching networks in the form of a bridged-T all-pass network. This approach offers the advantage of exceptional gain flatness, good input VSWR, high efficiency, and small size. A two-stage amplifier is described that delivers power greater than 1 W across the 2 to 6-GHz range with a linear gain of 20 dB, an input VSWR better than 1.7:1, and a power-added efficiency of 30% to 37% with a chip area less than 4.4 mm²     

GaAs PHEMT工艺V波段有源二倍频器MMIC

基于标准GaAs赝配高电子迁移率晶体管(PHEMT)工艺,设计了一个输出频率在V波段的有源二倍频器单片微波集成电路(MMIC),实现了高输出功率和良好的谐波抑制特性.芯片内部集成了180°马逊巴伦、对管变频和输出功率放大器等电路.重点优化设计了马逊巴伦的版图结构,在宽带内具有良好的相位和幅度特性;分析了对管变频结构电路的原理,确定其最佳工作电压在压断电压附近;设计了V波段两级放大器电路,对带内信号放大的同时抑制了带外谐波信号,提高了整个倍频器的输出功率.芯片采用微波探针台在片测试,在外加3.5V电源电压下的工作电流为147 mA;输入功率为14 dBm时,在55～ 65 GHz输出带宽内的输出功率为13 dBm;带内基波抑制大于20 dBc,芯片面积为2.1 mm×1.3 mm.此倍频器MMIC可应用于V波段通信系统和微波测量系统.     

A broadband,high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology

This paper presents the design and characterization of a broadband millimeter-wave PA realized in a 130 nm standard RF-CMOS process with 8-metal-layer and transistor f _T /f _MAX of 117/161 GHz. The power amplifier adopts transformer and transmission line matching topology which achieves small area of die and wide bandwidth. A new lumped transformer model is proposed to facilitate the optimization. The measured 3 dB bandwidth is 20 GHz (from 47 to 67 GHz), the measured maximum gain is about 8.6 dB, output 1 dB compression power is 9.36 dBm and consumes 90 mA current from DC supply 1.2 V. Including GSG and DC pads, the PA occupies a compact chip area of 0.318 mm², and without pads, the PA occupies 0.141 mm².     

A Compact 6.5-W PHEMT MMIC Power Amplifier for Ku-Band Applications

A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554mm² (3.64mmtimes2.35mm) is designed to fully match 50-Omega input and output impedance. Under 8V and 2000mA dc bias condition, the PA deliver 38.1dBm (6.5W) saturated output power, 10.5-dB small signal gain and peak power added efficiency of 24.6% from 13.6 to 14.2GHz. This MMIC also achieved the best power densities (760mW/mm²) at Ku band reported to date     

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

A new physics-based noise model of a GaAs PHEMT is developed using the characteristic potential method (CPM). The model calculates the intrinsic noise current sources using CPM. Combined with the extrinsic noise parameters extracted from the measured S-parameters, the model reproduces four noise parameters of the device accurately under low drain bias voltages without using any fitting parameters. The model is verified with a 0.2-/spl mu/m GaAs PHEMT and shows excellent agreement with the measurements for all the noise parameters up to a drain voltage of 1 V Also, the proposed method allows the simulation of the microscopic noise distribution and thus allows one to obtain a physical understanding of noise mechanisms inside the device.     

A Compact Broadband PHEMT MMIC Power Amplifier for K through Ka-band Applications

A compact and broadband MMIC power amplifier operating from 18 GHz to 35 GHz is developed for K- through Ka-band applications implementing a rigorous electromagnetic (EM) simulation of closely spaced matching networks. The EM simulation results in a compact chip size as small as 2.16 mm × 2.0 mm and isolations of less than -25 dB up to 40 GHz between neighboring distributed structures. The two-stage balanced power amplifier fabricated using a 0.25 µm AlGaAs/InGaAs/GaAs PHEMT technology has an average gain of 11 dB, return losses less than -10 dB, and P1 dB above 20.5 dBm from 18 GHz to 35 GHz. This compact and broadband MMIC power amplifier is suited for power amplifiers for most K through Ka-band communication systems such as the FSS, LMDS, and ITS.