Theoretical Study of the AICI Disproportionation Reaction Mechanism on the Al(100) Surface

The surface disproportionation reaction mechanism of aluminum subchloride on the aluminum (100) surfaces has been investigated by the plane-wave density functional theory (DFT).Three kinds of possible reaction mechanism of AlCl disproportionation reaction on the aluminum (100)surfaces have been taken into account. The structures of reactants and products have been optimized, transition states have been confirmed and activation energies have been calculated. The adsorption energy of reactants and desorption energy of products have been determined. All of these have been employed to confirm the reaction mechanism and the rate determining step of AlCl disproportionation reaction on the aluminum (100) surfaces.     

Theoretical Study on the Reaction Mechanism of SiCl_4 with H in the Gas Phase

1 INTRODUCTION Semiconductor silicon materials are vital for mi- croelectronic and information industry. Silicon has many advantages, for example, rich resource, out- standing quality and sophisticated processing tech- nology. So it has been widely used in semiconduc- tor industry. One of the key techniques of mo- dern microelectronic industry is epitaxial growth of single crystal thin film on single crystal silicon and its ba- cking materials. In the chemical vapour deposition of Si, g…     

丙烯腈在Cu(100)表面化学吸附的密度泛函理论研究

利用密度泛函方法, 模拟金属铜原子簇Cu₁₄(9,4,1)的(100)表面, 对丙烯腈(CH₂＝CHCN)在Cu(100)面上不同吸附位的吸附状况进行了理论研究. 结果表明: 丙烯腈分子通过端位N原子垂直吸附在金属表面上为弱化学吸附, 部分电荷从丙烯腈分子转移至铜金属簇; 由N原子的孤对电子与金属铜形成弱σ共价键; 顶位是最佳吸附位, 吸附能为40.7391 kJ•mol^－1, N原子与金属表面间的平衡距离为0.2279 nm; 其次为桥位和穴位, 吸附能分别为36.2513和30.2158 kJ•mol^－1, 平衡距离为0.2194和0.2886 nm; 吸附后C≡N键的强度降低, 活化了丙烯腈分子. 化学吸附使体系的熵减小, 是由于丙烯腈分子的平动和转动因吸附而被限制.     

在Rh(111)面上NO+CO反应机理的密度泛函理论研究

应用基于密度泛函理论赝势平面波方法的CASTEP程序, 对Rh(111)上的NO+CO反应机理进行研究. 对于反应中的各个关键步骤: NO离解、CO2生成、通过N2O离解生成N2以及通过N+N反应生成N2都进行了详细讨论, 计算得到各反应步骤的过渡态以及活化能, 从而确立了各步骤的反应路径.     

洁净和氧吸附的Cu(100)表面重构的理论研究

The interaction of atomic oxygen with the clean Cu(100) surface has been studied by means of cluster and periodic slab models density functional theory in the present paper. The Cu(4,9,4) cluster and a three-layer slab with c(2×2) structure are used to model the perfect Cu(100) surface. Three possible adsorption sites,top, bridge and hollow site, were considered in the calculations. The predicted results show that the hollow site is the prefer site for atomic oxygen adsorbed on Cu(100) surface energetically. This is in good agreement with the experiment. The calculated binding energies are respective 2.014, 3.154 and 3.942 eV for top, bridge and hollow sites at mPW1PW91/LanL2dz level for the cluster model. The geometry of Cu(100) surface has also been optimized theoretically with various density functional methods and the results show that the prediction from the B3PW91/LanL2dz and mPW1PW91/LanL2dz reproduce the experimental observation.The frontier molecular orbitals and partial density of states analysis show that the electron transfer from the d orbital of substrate to the p orbital of the surface oxygen atom.     

AlCl歧化反应分解法制备金属铝过程中[AlCl]_n的形成机理

利用密度泛函理论(DFT)中的广义梯度近似(GGA)法,对氧化铝真空还原氯化歧化法制备金属铝的过程中[AlCl]n(n=1-10)团簇的稳定结构、能量和团簇形成过程的过渡态及其振动频率进行了理论研究,预测了其基态结构及成长趋势.结果表明:[AlCl]n(n=1-10)团簇可能存在的结构都是以[Al]n骨架外接n个Cl原子成型,且具有较好的几何对称性;从过渡态计算得到的活化能来看,正过程的活化能总是比逆过程的活化能要小,即[AlCl]n(n=1-10)团簇具有较好的成长趋势.以上研究结果有助于进一步了解用碳热还原氯化歧化法制备金属铝过程中液态金属铝的生成.     

二甲醚在Pt(100)表面吸附的密度泛函理论研究

采用密度泛函理论(DFT)方法结合周期性平板模型,研究了二甲醚(DME)分子在Pt(100)表面上的吸附.通过对不同吸附位(顶位、空位和桥位)下的几何结构、吸附能和mulliken电荷布局计算发现,吸附后C-O键和C-H键都有不同程度的伸长,top位的吸附能最大,hcp位最小;top位吸附有利于C-O键的断裂,bri位吸附则更利于C-H键的断裂。     

Ru(II)催化有机叠氮与炔反应机理的理论研究

采用密度泛函理论, 对在Ru(II)催化剂存在下, 有机叠氮化合物和末端炔的反应机理作了深入理论研究. 在B3LYP/LANL2DZ水平上, 对该反应体系中势能面各驻点的几何构型进行了全优化计算, 并经振动频率分析确定了过渡态和中间体, 通过内禀反应坐标(IRC)的计算, 确认了反应物、中间体、过渡态和产物的相关性. 对多个反应通道的协同反应以及分步反应进行了研究. 结果表明: 协同反应通道Ic和分步反应通道IIc是反应能垒较低的反应通道, 活化自由能较其它反应通道低, 有利于1,5-二取代1,2,3-三唑的生成, 具有特定的区域选择性, 与实验结果吻合.     

Cu(100)表面吸附CN的密度泛函研究

采用密度泛函方法,以原子簇Cu14为模拟表面,对CN自由基分子在垂直和平行Cu(100)表面不同位置的吸附情况进行了研究,结果表明：通过原子C垂直吸附在表面的顶位是其最佳吸附方式,吸附后CN键振动频率发生蓝移;而其它吸附方式中CN键振动频率均发生红移．DOS和电荷转移分析指出CN通过C端吸附在表面顶位位置时,Cu与CN之间具有较强的σ成键和较弱的π反键特征．     

Density Functional Theory Study on the Adsorption of HCNH and CNH2 on Cu（100） Surface

The HCNH and CNH2 adsorption on different coordination sites of Cu（100） was theoretically studied considering the cluster approach. The present calculations show that the bridge site is the most favorite for CNH2 perpendicularly adsorbed on the Cu（100） surface via the C atom. For HCNH absorbed on the Cu（100） surface, the parallel adsorption mode with the C and N atoms nearly directly above the adjacent top sites of Cu（100） surface is the most favored. Both CNH2 and HCNH are strongly bound to the Cu（100） surface with CNH2 which is lightly stable （2.51 kJ·mol^-1）, indicating that both species may be co-adsorbed on the Cu（100） surface.     

Theoretical Study on the Dehydrogenation Reaction of H2S by VS+ (3∑-)

The dehydrogenation reaction of H2S by the 3∑- ground state of VS+: VS+ + H2S → VS2+ + H2 has been studied by using Density Functional Theory (DFT) at the B3LYP/DZVP level. It is found that the reaction proceeds along two possible pathways (A and B) yielding two isomer dehydrogenation products VS2+-1 (3B2) and VS2+-2 (3A1), respectively. For both pathways,the reaction has a two-step-reaction mechanism that involves the migration of two hydrogen atoms from S2 to V+, respectively. The migration of the second hydrogen via TS3 and that of the first via TS4 are the rate-determining steps for pathways A and B, respectively. The activation energy is 17.4 kcal/mol for pathway A and 22.8 kcal/mol for pathway B relative to the reactants. The calculated reaction heat of 9.9 kcal/mol indicates the endothermicity of pathway A and that of -11.9 kcal/mol suggests the exothermicity of pathway B.     

MIL⁃53(Al)催化甲基氯硅烷的歧化机理

利用B3LYP/6?311++G(3df,2pd)方法计算了MIL?53(Al)的3个位点催化甲基氯硅烷以制备二甲基二氯硅烷的活性差异,并对反应通道、能量、过渡态虚振模式、内禀反应坐标(IRC)、关键原子间距的变化等进行了分析和讨论,得出了一致的结论:1~3号活性位催化的主反应速控步的活化能分别为157.15、155.31和123.44 kJ·mol-1;副反应速控步的活化能分别为206.48、214.87和166.07 kJ·mol-1。MIL?53(Al)能顺利催化歧化反应的原因在于其催化中心Al—O—H上的Br?nsted酸H,活性的差异来源于其配位环境的不同。     

羟基化氧化锌催化甲醇裂解反应机理的理论研究

采用密度泛函理论的B3LYP方法在两种基组水平上研究了羟基化氧化锌催化裂解甲醇反应机理, 优化了反应过程中各反应物、中间体、过渡态和产物几何构型, 并且应用了自然轨道理论(NBO)和分子中的原子理论(AIM)分析了这些物质的成键特征和轨道间的相互作用. 研究中分别采用了羟基化一个ZnO和羟基化两个ZnO作为催化剂的两种简化模型. 结果表明两种不同基组研究所得的反应历程及相应能量变化趋势一致; 羟基化两个ZnO催化剂活化裂解甲醇反应更容易发生.     

HNCS与CX(X=H,F,Cl)自由基反应的理论研究

用量子化学密度泛函理论的UB3LYP方法,在6-31 G^*水平上按BERNY能量梯度解析法全参数优化了HNCS与CX(X=H,F,Cl)反应势能面上各驻点的几何构型,通过同一水平的振动频率分析确认了中问体和过渡态,并得到各驻点的零点能校正(Ezpc)．通过内禀反应坐标(IRC)计算确认了反应物、中间体、过渡态和产物的相关性并得到最小能量途径(MEP)．为了得到体系势能面的更准确信息,在各驻点的UB3LYP／6-31 G^*构型基础上,又进行了UQCISD(T)／6-311 G^**水平上的单点能计算,得到体系的势能面信息和可能的反应机理．应用变分过渡态理论及最小能量途径半经典绝热基态(MEPSAG)、小曲率半经典绝热基态(SCSAG)隧道效应校正的方法计算了标题反应在250～1500K温度范围内的速率常数．研究结果表明,HNCS与CX自由基反应是通过分子间H原子迁移及N—C键的断裂,生成产物CS NCXH．反应均为放热反应．     

苯在Ag(100)表面吸附的周期性密度泛函理论研究

 采用量子化学中的密度泛函理论结合平板周期模型方法,研究了苯在Ag(100)面上的吸附方式和相对稳定性. 通过对不同吸附位置的吸附能和几何构型参数的比较发现,苯在Ag(100)表面的吸附属于较强的化学作用,穴位吸附的稳定性优于桥位,顶位吸附最不稳定. 吸附的苯分子的平衡构型发生扭曲, C-C键有较大程度的伸长; C-H键的键长基本不变,但是偏离苯环平面,并背离Ag(100)表面. 在吸附过程中,电子由苯向表面银原子转移. 本文给出了详细的轨道示意图和电荷布居分析,并且与相关的实验和理论研究结果进行了比较.     

一个方酸内鎓盐衍生物合成机理的理论研究

用ＰＭ３方法对新近合成的一个方酸内Ｗｅｎｇ盐衍生物：２－（Ｎ,Ｎ－二羟乙基）胺基－４－二甲胺苯基方酸内Ｗｅｎｇ盐的微观反应机理进行了研究,计算结果表明：以（Ｎ,Ｎ－二羟乙基）胺基负离子,二甲胺一方酸制备该方酸内Ｗｅｎｇ盐有邻位和对位两种产物,且对位更易生成,同时,还探讨了提高光致材料产率的可能方法。     

甲醛在FeS2(100)完整与S-缺陷表面吸附的理论研究

运用密度泛函理论广义梯度近似的PBE方法结合周期平板模型,研究了HCHO分子在FeS2(100)完整与S-缺陷表面的吸附.结果表明,在两种表面上,HCHO均通过O原子与两个表面作用:稳定吸附于完整表面Fe-top位(Fe五配位);而在S-缺陷表面则存在两种稳定吸附模式,即HCHO分别与表面的一个和两个四配位Fe成键.对...     

OClO与OH反应机理的理论研究

用密度泛函B3LYP/-311+G~(* *)和级电子相关倒映 合簇CCSD(T)/6-311+G~(* *)方法研究了OClO与OH反应的微观机理，研究结果表明：该反应经过缔合、H转移 和离解等复杂过程，最终得到四种产物，分别为HOCl+O_2，HCl+O_3,ClO+HO_2和 HOClO_2,从能量上看，形成HOCl+O_2和HCl+O_3的通道更容易进行，而形成 ClO+HO_2的通首在动力学上是最不利的。     

Unraveling the Amine‐Induced Disproportionation Reaction of Perchlorinated Silanes—A DFT Study

A detailed quantum‐chemical study on the amine‐induced disproportionation reaction of perchlorinated silanes to neo‐Si₅Cl₁₂ is reported. The key intermediate in the resulting mechanistic scenario is a dichlorosilylene amine adduct, which is in tune with recent experimental findings. Yet, at variance with the generally accepted notion of silicon‐chain growth by concerted silylene insertion into Si?Cl bonds of lower silanes, the formation of neo‐Si₅Cl₁₂ follows more complex pathways. The reactivity is dominated by the Lewis–base character of the dichlorosilylene amine adduct and characterized by three elementary steps that bear close resemblance to the key elementary steps identified earlier for the chloride‐induced disproportionation of Si₂Cl₆. NBO and QTAIM analyses of the key reactive species SiCl₂ ? NMe₃ and SiCl₃^? provide a rationale for these striking similarities.