On the tunneling time of arbitrary continuous potentials and the Hartman effect

This paper obtains a generalized tunneling time of one-dimensional potentials via time reversal invariance.It also proposes a simple explanation for the Hartman effect using the useful concept of the scattered subwaves.     

Ultra-compact graphene plasmonic filter integrated in a waveguide

Graphene plasmons have become promising candidates for deep-subwavelength nanoscale optical devices due to their strong field confinement and low damping. Among these nanoscale optical devices, band-pass filter for wavelength selection and noise filtering are key devices in an integrated optical circuit. However, plasmonic filters are still oversized because large resonant cavities are needed to perform frequency selection. Here, an ultra-compact filter integrated in a graphene plasmonic waveguide was designed, where a rectangular resonant cavity is inside a graphene nanoribbon waveguide. The properties of the filter were studied using the finite-difference time-domain method and demonstrated using the analytical model. The results demonstrate the band-pass filter has a high quality factor(20.36) and electrically tunable frequency response. The working frequency of the filter could also be tuned by modifying the cavity size. Our work provides a feasible structure for a graphene plasmonic nano-filter for future use in integrated optical circuits.     

Ionization of metastable He(1s2s) atoms by alkalated surfaces

We calculate the ionization probability for singlet and triplet metastable He(1s2s) atoms scattered from potassium covered surfaces, on the basis of the resonant tunnelling process. We do not assume the trajectory approximation, but we do assume classical motion on the potential energy curves, with crossing between neutral and ionic curves at a given point calculated from electronic tunnelling probabilities. Energy spectra of the He⁺ ions are also calculated. The results are found to be somewhat sensitive to tunnelling probability as a function of distance from the surface. Results are compared with experimental ionization probabilities measured by Roussel. The agreement is found to be fair if the tunneling rate is parameterized according to the theory of Janev et al. A simple interpretation is given.     

Terahertz oscillations in semiconducting carbon nanotube resonant-tunneling diodes

The paper presents the simulation and possible physical implementation of a resonant tunneling diode based on a semiconducting single-walled carbon nanotube, which exceeds the performance of similar resonant tunneling devices based on semiconductor heterostructures. In this respect, the oscillation frequency and the output power are predicted to be greater by one order of magnitude, attaining 16 THz and 2.5 μW, respectively. The generated THz signal is directly radiated into free-space through the injection contacts of the resonant tunneling diode, which have the shape of a bowtie antenna.     

Gate-tunable valley-filter based on suspended graphene with double magnetic barrier structures

We theoretically investigate the effects of strain-induced pseudomagnetic fields on the transmission probability and the ballistic conductance for Dirac fermion transport in suspended graphene. We show that resonant tunneling through double magnetic barriers can be tuned by strain in the suspended region. The valley-resolved transmission peaks are apparently distinguishable owing to the sharpness of the resonant tunneling. With the specific strain, the resonant tunneling is completely suppressed for Dirac fermions occupying the one valley, but the resonant tunneling exists for the other valley. The valley-filtering effect is expected to be measurable by strain engineering. The proposed system can be used to fabricate a graphene valley filter with the large valley polarization almost 100%.     

双量子阱中光子辅助电子自旋隧穿

采用单电子有效质量近似理论, Floquet理论和传递矩阵方法, 对包含时间周期场的双量子阱中单电子的自旋隧穿特性进行了研究, 对InP/InAs半导体材料进行了数值计算. 重点研究了Rashba型和Dresselhaus型自旋轨道耦合、量子阱结构以及偏压对电子隧穿的影响. 这些结果可以为设计和调控半导体自旋电子器件提供一定的理论依据. 关键词： 光子辅助隧穿 隧穿概率 量子阱     

RESONANT TUNNELING THROUGH COUPLED DOUBLE-QUANTUM-WELL

A double-well resonant tunneling structure has been investigated carefully using the nonequilibrium Green's function method. We find that in the transmission probability two maxima appear even when the two levels have the same energy. This characteristic is at-tributed to the resonant tunneliug through mixed quasibound states. The tunneling current formula through this system under a dc voltage has been derived exactly. Three different cases are considered and several novel properties are found, which manifest coherent charac-teristics of the tunneling process.     

半导体量子器件物理讲座第四讲 共振隧穿器件及其电路应用

当一个电子的能量低于势垒高度时,它仍可以隧穿通过势垒,在一定条件下,双势垒结构中电子的隧穿几率甚至可以接近1,利用这种共振隧穿现象可以做成共振隧穿二极管,它的电流－电压特性曲线中会出现负微分电阻,利用这种负阻效应可以做成高频振荡器和倍频器等电子器件,双势垒结构与通常的双极晶体管结合可以做成共振隧穿双极晶体管,它们可以用来做成多态记忆器和模数转换器等器件。     

Why SWKB approximation is exact for all SIPs

Using analytical transfer matrix (ATM) theory, the phase contribution devoted by the scattered subwaves is found to be independent of n and integrable for all known shape invariant potentials (SIPs) with translation. We also successfully explain why SWKB quantization condition yields exact bound-state spectra for all SIPs.     

Resonant tunneling in magnetic semiconductor tunnel junctions with arbitrary magnetic alignments

Combining an extended Julliere model with transfer matrix method, we study the spin-polarized resonant tunneling in GaMnAs/AlAs/GaAs/AlAs/GaMnAs double barrier ferromagnetic semiconductor (FS) tunnel junctions with the arbitrary angle θ between the magnetic directions of two FS's. It is shown that tunneling magnetoresistance (TMR) ratio linearly varies with sin²(θ/2). We also demonstrate that for the heavy and light holes, the properties of the spin-polarized resonant tunneling are obviously different. The present results are expected to be instructive for manufacturing the relevant semiconductor spintronic devices.     

Electronic Resonant Splitting in a Nanostructure with Periodic Magnetic-Electric Barriers

In this letter, the transmission probability and the conductance of the ballistic electron are studied in a nanostructure with the periodic magnetic-electric barriers. We find that the resonant splitting increases with the number of periods increasing, so the number of the resonant peaks increases and the peaks become sharper. For the m-th periodic magnetic-electric barriers tunneling the splitting is (m-1)-fold.     

Resonant inversion of tunneling magnetoresistance

Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this behavior in terms of disorder-driven statistical variations in magnetoresistance with a finite probability of inversion due to resonant tunneling.     

Generation and classification of the translational shape-invariant potentials based on the analytical transfer matrix method

For the conventional translational shape-invariant potentials (TSIPs), it has demonstrated that the phase contribution devoted by the scattered subwaves in the analytical transfer matrix quantization condition is integrable and independent of n. Based on this fact we propose a novel strategy to generate the whole set of conventional TSIPs and classify them into three types. The generating functions are given explicitly and the Morse potential is taken as an example to illustrate this strategy.     

Quantum scattering in one-dimensional systems satisfying the minimal length uncertainty relation

In quantum gravity theories, when the scattering energy is comparable to the Planck energy the Heisenberg uncertainty principle breaks down and is replaced by the minimal length uncertainty relation. In this paper, the consequences of the minimal length uncertainty relation on one-dimensional quantum scattering are studied using an approach involving a recently proposed second-order differential equation. An exact analytical expression for the tunneling probability through a locally-periodic rectangular potential barrier system is obtained. Results show that the existence of a non-zero minimal length uncertainty tends to shift the resonant tunneling energies to the positive direction. Scattering through a locally-periodic potential composed of double-rectangular potential barriers shows that the first band of resonant tunneling energies widens for minimal length cases when the double-rectangular potential barrier is symmetric but narrows down when the double-rectangular potential barrier is asymmetric. A numerical solution which exploits the use of Wronskians is used to calculate the transmission probabilities through the Pöschl–Teller well, Gaussian barrier, and double-Gaussian barrier. Results show that the probability of passage through the Pöschl–Teller well and Gaussian barrier is smaller in the minimal length cases compared to the non-minimal length case. For the double-Gaussian barrier, the probability of passage for energies that are more positive than the resonant tunneling energy is larger in the minimal length cases compared to the non-minimal length case. The approach is exact and applicable to many types of scattering potential.     

Calculation of electron propagation in heterostructures

Analytical and numerical methods in the theory of quantum-mechanical propagation of electrons in parallel-geometry heterostructures, allowing for inhomogeneous effective mass and including interfaces, are presented: An algorithm for numerical computation of transmission probability, a treatment of the residual reflection probability in a graded structure, a discussion of resonant tunneling, and a general quantum-mechanical formulation of tunneling theory.     

Generation and classification of the translational shape-invariant potentials based on the analytical transfer matrix method

For the conventional translational shape-invariant potentials (TSIPs), it has demonstrated that the phase contribution devoted by the scattered subwaves in the analytical transfer matrix quantization condition is integrable and independent of n. Based on this fact we propose a novel strategy to generate the whole set of conventional TSIPs and classify them into three types. The generating functions are given explicitly and the Morse potential is taken as an example to illustrate this strategy.     

Level width of a quasibound state in a double-barrier parabolic-well resonant tunneling structure

Taking exact Airy functions and Hermitian functions as envelope functions, we investigate in detail the level width of a quasibound state for electrons coherent resonant tunneling through symmetric and asymmetric double-barrier parabolic-well resonant tunneling structures (DBRT) with the transfer-matrix formalism. It is found that for the symmetric structure and the asymmetric structure with left barrier thicker than the right one, both the level width and the peak value vary monotonously with increasing applied bias, but for the asymmetric DBRT structure with left barrier thinner than the right one, they change nonmonotonously. The nonmonotonous variations of the level width and the peak value reflect the transition of tunneling type (i.e. first from incompletely resonant tunneling to completely resonant tunneling, and then from completely resonant tunneling back to incompletely resonant tunneling). The effects of well width, barrier thickness and barrier height on the level width and the peak value are also inspected.     

The effect of an external electric field on the optical properties of a quantum molecule with a resonance D(-)-state

The average binding energy and the level width for the resonant D^(-)-state in a quantum molecule have been calculated in the presence of an external electric field. The calculations were performed in the zeroradius potential model with allowance for the tunneling decay of the resonant state. The external electric field is shown to stimulate the decay of resonant D^(-)-states under conditions of dissipative tunneling. It was found that the curve of the probability of photoionization of the D^(-)-center as a function of the external electric field strength has two peaks that are connected with a change in the symmetry of the double-well oscillator potential of the quantum molecule and with the transformation (caused by the electric field) of envelope wave functions, respectively.     

Resonant tunneling into a biased fractional quantum Hall edge

We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleaved-edge overgrown devices. The resonances demonstrate different tunnel couplings to the metallic lead and the FQHE edge. Weak coupling to the FQHE edge produces clear non-Fermi liquid behavior with a sixfold increase in resonance area under bias arising from the power law density of states at the FQHE edge. A simple device model uses the resonant tunneling formalism for chiral Luttinger liquids to successfully describe the data.     

硅基双势垒金属-绝缘层-金属-绝缘层-半导体隧道发光结

讨论了硅基双势垒金属－绝缘层－金属－绝缘层－半导体（MIMIS）隧道发光结的结构、制备方法及发光特性。所制备的样品最大发光亮度达到1．9cd/m^2、光谱的峰值波长移到了蓝绿光区，表明双势垒MIMIS隧道发光结的性能优于单势垒金属－绝缘层－半导体（MIS）隧道发光结。利用量子力学的共振隧穿效应对它作了较好的解释。