Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation

The field of semiconductor quantum dot (QD) diode lasers is rapidly developing. Important milestones, such as low-threshold operation and room-temperature cw operation, have been achieved in the last years. We review the progress in theoretical understanding and present recent results on high-power QD laser operation (>3 W@1100 nm). Received: 24 June 1999 / Revised version: 23 August 1999 / Published online: 20 October 1999     

Thermal- and Spectral-Characteristics of High-Power Quasi-Continuous Wave 940-nm InGaAs Diode Laser Arrays

Experimental results of the thermal and spectral characteristics of a monolithic stack of high power quasicontinuous wave 940-nm InGaAs linear laser diode arrays have been evaluated. Thermal resistance as the most important thermal parameter characterizing a high-power laser diode package was obtained using the temperature rise measured directly by a thermo-camera. A new simple and convenient technique to measure a spectral transition of the emission from laser diode arrays is proposed. Spectral chirping due to the transient thermal power dissipated during the laser pulse was observed as a time-evolution of the spectral profile; it gave a comprehensible image of the chirping behavior. Comparing the temperature rise in the diode junction with the thermal simulation, it was determined that the thermal shift of central wavelength dλ/dT was 0.21 nm/°C. Detailed performances were identified for pumping a Yb³⁺ doped crystalline laser, and it was verified that the laser diode arrays were satisfactory to meet pumping source requirements for coupling to Yb³⁺ absorption linewidth.     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

Recent progress in the development of type II interband cascade lasers

Type-II interband cascade lasers combine the advantage of an interband optical transition with interband tunneling to enable the cascading of type-II quantum well active regions as is done in type-I quantum cascade laser. The relatively high radiative efficiency resulting from interband optical transitions translates into very low-threshold current densities, and when combined with the high quantum efficiency of cascade lasers, this diode laser design has the potential to operate under cw conditions at room temperature with high output power. Experimental results have already demonstrated some of this potential including high differential external quantum efficiency (>600%), high peak output power (6 W/facet at 80 K), high cw power conversion efficiency (>17% at 80 K), and operation at 300 K under pulsed conditions. Recent work aimed at reducing device thermal resistance and increasing cw operating temperature is reviewed including the demonstration of significant reductions in thermal resistance (averaging 25 K/W or 40% for 1-mm-long devices), 80 K cw operation at 3.4 μm with high-power conversion efficiency (23%) and high differential external quantum efficiency (532%), and cw operation up to 214 K.     

Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤600 °C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as ∼400 °C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon. Received: 21 June 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000     

Multiwatt, tunable, diode-pumped CW Yb:GdCOB laser

We demonstrate that Yb-doped Ca₄GdO(BO₃)₃ (GdCOB) crystals are suitable for the development of high-power diode-pumped lasers emitting at around 1.04 μm. A 15%-doped Yb:GdCOB crystal was longitudinally pumped with a cw fiber-coupled diode emitting 10 W at 976 nm. While 5.2 W of diode power was absorbed, we obtained 3.2 W of 1043-μm laser light, with a beam quality factor M² equal to 3, and 2.5 W in a diffraction-limited beam. Furthermore, the laser is continuously tunable between 1018 and 1086 nm. Thermal effects have been investigated with a Shack–Hartmann wavefront analyser: although thermal lensing is not negligible, it does not affect the performance of the laser with the resonator design we used. Received: 1 August 2000 / Revised version: 18 September 2000 / Published online: 21 February 2001     

Film structure and ferroelectric properties of in situ grown SrBi2Ta2O9 films

Ferroelectric SrBi₂Ta₂O₉ (SBT) films were grown by pulsed-laser deposition (PLD) at different substrate temperatures and fluences. A correlation between film structure and ferroelectric properties is established. The dielectric function ε^′ of thin SBT films shows a Curie–Weiss behavior well below the peak temperature T_max and relaxor-like behavior in the vicinity of T_max. Domain walls have a strong influence on the dielectric and ferroelectric properties and on the polarization fatigue of SBT films below 100 °C. The formation of ferroelectric phases is favored at lower substrate temperatures by incorporating Bi₂O₃ template layers into the structure. Received: 18 March 1999 / Accepted: 19 March 1999 / Published online: 5 May 1999     

Narrow bandwidth operation of high-power broad-area diode laser using cascaded phase-conjugate injection locking

A broad-area laser is injection-locked by another broad-area laser that is also injection-locked by a single-mode diode laser. Two double-phase conjugate mirrors of photorefractive BaTaO₃ are used to couple the master laser beams to the first slave laser, and the first slave laser output to the second slave laser. One of the double-phase conjugate mirrors is built up with the beams from two broad-area lasers. Two slave lasers are oscillating in single longitudinal mode at 808.5 nm and the spectral width is the same as that of the master laser. Final single-mode output power from the second slave broad-area laser is 840 mW, which is limited by the power of the injection beam. This work verifies the possibility of the multi-stage cascaded injection locking of high-power diode lasers with phase-conjugate injection. Received: 18 November 1998 / Revised version: 29 January 1999 / Published online: 7 April 1999     

Comparison of laser performance of Yb:YCa4O(BO3)3 crystals cut along the principal optical axes

Efficient high-power continuous-wave laser operation is demonstrated with Yb:YCa₄O(BO₃)₃ crystals cut along the X, Y, and Z principal axes, end pumped by a high-power diode. Highest output powers of 6.3–7.3 W are generated, with slope efficiencies in the range of 73–83%. The standard behavior characterized by fixed linear polarization of the output and decreasing oscillation wavelength when increasing the output coupling was observed only for the X-cut crystal; the Y-cut crystal led to the polarization state changing and coexistence, while the Z-cut crystal resulted in dual-band laser operation with a fixed polarization state. PACS 42.55.Rz; 42.55.Xi     

Lead diffusion in α-Zr

Pb diffusion in α-Zr matrix between 823 and 1123 K was measured using heavy ion Rutherford backscattering spectrometry (HIRBS) technique. A deviation from the Arrhenius law was observed, with two different regions. At low temperatures the activation energy Q is close to the expected value for a substitutional diffuser but the pre-exponential factor D₀ is higher than expected. Close to the phase transition temperature the opposite occurs, with a low Q value. This behavior is similar to the one observed for Hf and self-diffusion in α-Zr. Received: 29 September 1998 / Accepted: 29 January 1999 / Published online: 28 April 1999     

An all-solid-state laser system for generation of 100 μJ femtosecond pulses near 625 nm at 1 kHz

Frequency doubling the output of a high-power femtosecond Cr:forsterite regenerative amplifier with >50% conversion efficiency in a temperature-tuned noncritically phase-matched LBO crystal produces femtosecond pulses of >100 μJ energy in the visible range near 625 nm at a pulse duration of about 200 fs or >65 μJ at <170 fs. Received: 29 March 1999 / Revised version: 27 April 1999 / Published online: 24 June 1999     

Difference-frequency generation in PPLN at 4.25 μm: an analysis of sensitivity limits for DFG spectrometers

We report difference-frequency generation (DFG) in periodically poled lithium niobate (PPLN) around 4.25 μm using a cw Nd:YAG and an injection-locked diode laser. This system provides a narrow linewidth source at 4.25 μm with near-shot-noise-limited operation. A conversion efficiency close to the theoretical limit is obtained. Detection of CO₂ absorption spectra is demonstrated and further improvements and applications to high sensitivity spectroscopy are discussed. Received: 12 August 1999 / Revised version: 21 January 2000 / Published online: 24 March 2000     

Otpically illuminated dielectric interfaces as high-speed far-infrared modulators

A new device for the gigahertz modulation of far-infrared radiation is analytically and numerically analyzed. It consists of a thin layer of a high-mobility, direct-bandgap semiconductor, such as GaAs, in which a high-density electron-hole plasma is rapidly created and destroyed, thereby rapidly changing the free-carrier reflectivity of the active layer. Illumination by a high-power, near-infrared laser diode array generates the plasma through intrinsic photoconduction. It is shown that this device acis primarily as an amplitude modulator, and that its efficiency increases sharply with increasing far-IR frequency, in contrast to a Schottky diode, which acts primarily as a phase modulator, and whose efficiency falls off sharply with far-IR frequency. The breakeven frequency lies at about 1.5 THz, depending slightly on the assumed device parameters. The relative advantage of the new device increases rapidly with increasing far-infrared frequency. At an operating frequency of 2.5 THz (119 m), for example, a 1 GHz modulation bandwidth may be achieved with a single-sideband conversion loss of only-21 db, versus a Schottky's loss of-39 db, assuming a laser diode power of 1 W, which is readily available from recently developed laser diode arrays.     

Delayed breakdown diode and its optimal design for solid state picosecond closing switch

We study a Si-based diode with a p⁺nn⁺ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters.     

Structure and magnetic properties of Co nanoclusters fabricated by ion beam synthesis in SiO2 films

Co nanoparticles fabricated by ion beam synthesis in SiO₂ films were investigated with transmission electron microscopy and superconducting quantum interference device technique. Variation of the thermal treatment enables the formation of Co nanoclusters of different sizes ranging from 2 to 40 nm. Small nanoclusters of about 2–3 nm are amorphous, whereas clusters above 7 nm show the configuration of cubic Co nanocrystals. Measurements of magnetisation at temperatures between 2 K and 360 K reveal superparamagnetic behaviour for the small nanoclusters up to 3 nm and ferromagnetism for clusters above 7 nm. Received: 12 February 2001 / Accepted: 3 May 2001 / Published online: 27 June 2001     

二极管侧泵浦单横模1kHz电光Q开关激光器

 本文介绍了二极管侧泵浦Nd:YAG板条1kHz重复频率Q开关激光器的研制,实验获得最大单脉冲能量0.712mJ,脉宽小于10ns的输出。对Nd:YAG板条进行了三种冷却方式的比较实验,实验证明DPL在高重复频率工作时,激光介质的热效应是影响高重复频率工作的激光器效率的重要因素。     

Laser-diode-pumped Cr4+, Nd3+:YAG self-Q-switched laser with high repetition rate and high stability

A diode end-pumped self Q-switched Cr⁴⁺, Nd³⁺: YAG laser was established with 30-ns pulse width (FWHM) and 0.5-μJ pulse energy output. In normal pulse pumping operation, the lasing threshold changed greatly from 122 mJ to 2.4 mJ as the pump pulse frequency varied from 1 Hz to 500 Hz due to pumping-induced thermal effect. A pre-pumping method was proposed and the change of the lasing threshold was reduced; programmable Q-pulse output with maximum frequency of 16 kHz and high stability was achieved. Received: 16 January 2001 / Revised version: 21 May 2001 / Published online: 19 September 2001     

A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction

A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current–voltage (I–V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram.     

Antireflection structures written by excimer laser on CVD diamond

Two-dimensional antireflective periodical microstructures for the IR range are fabricated on the surface of CVD diamond films. These structures are created using an ArF excimer laser (λ=193 nm) and a direct writing scheme consisting of a beam collimator and a microscope objective to focus the beam onto the sample. Two different arrays are investigated. One has a spacing of 3 μm and is produced with single shots and the other one has a spacing of 4 μm and is produced with three shots per spot. The hole depth and shape are measured with an atomic force microscope (AFM). The optical transmittance and the scattering properties of the structure at 10.6 μm are reported for a CO₂ laser beam. With a spectrometer further transmission measurements in the range of 5 to 20 μm are performed. Received: 16 September 1999 / Accepted: 11 October 1999 / Published online: 24 March 2000     

The demonstration of hybrid n-ZnO nanorod/p-polymer heterojunction light emitting diodes on glass substrates

We report a demonstration of heterojunction light emitting diode (LED) based on a hybrid n-ZnO-nanorod/p-polymer layered structure. The ZnO was grown using the aqueous chemical growth (ACG) on top of the polymer(s) which were deposited on glass. The current–voltage (I–V) behavior of the heterojunctions showed good rectifying diode characteristics. Room-temperature electroluminescence (EL) spectra of the LEDs provided a broad emission band over a wide LED color range (430–650 nm), in which both zinc and oxygen vacancy peaks are clearly detected. We present here luminescent devices based on the use of ZnO-nanorods in combination with two different blended and multi-layered p-type polymers. Electroluminescence of the first batch of devices showed that white bluish strong emission for the presently used polymers is clearly observed. We obtained a turn-on voltage of 3 V and break-down voltage equal to −6 V for PVK-TFB blended device. The corresponding values for the NPD-PFO multilayer device were 4 V and −14 V, respectively. The rectification factors were equal to 3 and 10 for the two devices, respectively. The films and devices processed were characterized by scanning electron microscopy (SEM), DEKTAK 3ST Surface Profile, Semiconductor Parameter Analyzer, photoluminescence (PL), and electroluminescence (EL).