Effect of interfacial mobility on rupture of thin stagnant films on a solid surface due to random mechanical perturbations

Previous analysis of Narsimhan [G. Narsimhan, J. Colloid Interface Sci. 287 (2005) 624-633] for the evaluation of rupture of a nondraining thin film on a solid support due to imposed random mechanical perturbations modeled as a Gaussian white noise has been extended for partially mobile gas-liquid interfaces. The average rupture time of film is evaluated by first passage time analysis (as the mean time for the amplitude of perturbation to become equal to film thickness). The interfacial mobility is accounted for through surface viscosity as well as Marangoni effect. The mean rupture time for partially mobile gas-liquid interface, as characterized by two dimensionless groups, dimensionless surface viscosity and Marangoni number, lies between the two extreme limits for fully mobile and immobile films. The critical wavenumber for minimum rupture time is shown to be insensitive to interfacial mobility. However, the critical dimensionless surface viscosity and critical Marangoni number at which the behavior of thin film deviates from that of fully mobile film and the behavior approaches that of fully immobile film are smaller for higher Hamaker constants, smaller film thickness and smaller surface potentials.     

Rupture of draining foam films due to random pressure fluctuations

A generalized formalism for the rupture of a draining foam film due to imposed random pressure fluctuations, modeled as a Gaussian white noise, is presented in which the flow inside the film is decomposed into a flow due to film drainage and a flow due to imposed perturbation. The evolution of the amplitude of perturbation is described by a stochastic differential equation. The rupture time distribution is calculated from the sample paths of perturbation amplitude as the time for this amplitude to equal one-half the film thickness and is calculated for different amplitudes of imposed perturbations, film thicknesses, electrostatic interactions, viscosities, and interfacial mobilities. The probability of film rupture is high for thicker films, especially at smaller times, as a result of faster growth of perturbations in a thick film due to a smaller disjoining pressure gradient. Larger viscosity, larger surface viscosity, higher Marangoni number, and smaller imposed pressure fluctuation result in slower growth of perturbation of a draining film, thus leading to larger rupture time. It is shown that a composite rupture time distribution combining short time simulation results with equilibrium distribution is a good approximation.     

Stability of thin stagnant film on a solid surface with a viscoelastic air-liquid interface

Linear stability analysis for a film on a solid surface with a viscoelastic air-liquid interface is presented. The interfacial dilatational and shear viscoelastic properties were described by Maxwell models. Dilatational and shear interfacial elasticity and viscosity were shown to improve film stability. When the interfacial rheological properties are extremely large or small, the maximum perturbation growth coefficient is shown to reduce to those for immobile and mobile interfaces respectively. Calculated values of maximum growth coefficient for thin film stabilized by 0.5% beta-lactoglobulin approached those of mobile films for thick (>2000 nm) and those for immobile films for thin (<100 nm) films respectively with the values lying between the two limits for intermediate film thicknesses.     

Tribology of thin wetting films between bubble and moving solid surface

This work shows a successful example of coupling of theory and experiment to study the tribology of bubble rubbing on solid surface. Such kind of investigation is reported for the first time in the literature. A theory about wetting film intercalated between bubble and moving solid surface was developed, thus deriving the non-linear evolution differential equation which accounted for the friction slip coefficient at the solid surface. The stationary 3D film thickness profile, which appears to be a solution of the differential equation, for each particular speed of motion of the solid surface was derived by means of special procedure and unique interferometric experimental setup. This allowed us to determine the 3D map of the lift pressure within the wetting film, the friction force per unit area and the friction coefficient of rubbing at different speeds of motion of the solid surface. Thus, we observed interesting tribological details about the rubbing of the bubble on the solid surface like for example:     

Adhesion and friction properties of molecularly thin perfluoropolyether liquid films on solid surface

The adhesion and friction properties of molecularly thin perfluoropolyether (PFPE) lubricant films dip-coated on a diamond-like carbon (DLC) overcoat of magnetic disks were studied using a pin-on-disk-type micro-tribotester that we developed. The load and friction forces were simultaneously measured on a rotating disk surface under an increasing/decreasing load cycle and slow sliding conditions. Experiments were performed using two types of PFPE lubricants: Fomblin Z-tetraol2000S with functional end-groups and Fomblin Z-03 without any end-group. The curves of the friction force as a function of the applied load agree with the curves estimated using the Johnson-Kendall-Roberts (JKR) model. The friction forces on the Z-03 films having different thicknesses were not found to decrease drastically; however, the friction forces on the Z-tetraol film were found to decrease drastically when the film thickness is more than ~1.2 nm. This drastic change in the case of the Z-tetraol film is estimated to be affected by the coverage of the lubricant film.     

GIUSAXS and AFM studies on surface reconstruction of latex thin films during thermal treatment

The structural evolution of a single-layer latex film during annealing was studied via grazing incidence ultrasmall-angle X-ray scattering (GIUSAXS) and atomic force microscopy (AFM). The latex particles were composed of a low-Tg (-54 degrees C) core (n-butylacrylate, 30 wt %) and a high-Tg (41 degrees C) shell (t-butylacrylate, 70 wt %) and had an overall diameter of about 500 nm. GIUSAXS data indicate that the q(y) scan at q(z) = 0.27 nm(-1) (out-of-plane scan) contains information about both the structure factor and the form factor. The GIUSAXS data on latex films annealed at various temperatures ranging from room temperature to 140 degrees C indicate that the structure of the latex thin film beneath the surface changed significantly. The evolution of the out-of-plane scan plot reveals the surface reconstruction of the film. Furthermore, we also followed the time-dependent behavior of structural evolution when the latex film was annealed at a relatively low temperature (60 degrees C) where restructuring within the film can be followed that cannot be detected by AFM, which detects only surface morphology. Moreover, compared to AFM studies GIUSAXS provides averaged information covering larger areas.     

Motion of a drop on a solid surface due to a wettability gradient

The hydrodynamic force experienced by a spherical-cap drop moving on a solid surface is obtained from two approximate analytical solutions and used to predict the quasi-steady speed of the drop in a wettability gradient. One solution is based on approximation of the shape of the drop as a collection of wedges, and the other is based on lubrication theory. Also, asymptotic results from both approximations for small contact angles, as well as an asymptotic result from lubrication theory that is good when the length scale of the drop is large compared with the slip length, are given. The results for the hydrodynamic force also can be used to predict the quasi-steady speed of a drop sliding down an incline.     

Rupture of thin films with resonant substrate patterning

We study the stability and rupture of thin liquid films on patterned substrates. It is shown that striped patterning on a length scale comparable to that of the spinodal instability leads to a resonance effect and an imperfect bifurcation of equilibrium film shapes. Weakly nonlinear analysis gives predictions for film shapes, stability, growth rates, and rupture times, which are confirmed by numerical solution of the thin-film equation. Film behavior is qualitatively different in the resonant patterning regime, but with sufficiently large domains rupture occurs on a spinodal length scale regardless of patterning. Instabilities transverse to the patterning are examined and shown to behave similarly as disturbances to films on uniform substrates. We explain some previously reported effects in terms of the imperfect bifurcation.     

Surface aggregation structure and surface mechanical properties of binary polymer blend thin films

During preparation of very thin polymer belnd films from a solution of polymers, the phase‐separated structures which are quite different from that observed for the bulk blend film was observed. From atomic force microscopic(AFM) observation, it is concluded that the surface undulation, which reflects the phase separated morphology of the blend system, is present. In the case of (polystyrene(PS)/poly(methyl methacrylate)(PMMA)) blend system, a large influence of end‐group chemistry on the surface morphology was observed. The phase identification of the (rubbery polymer/glassy polymer) binary blend thin films was successfully achieved by scanning vioscoelasticity microsopy(SVM).     

XPS investigations of thin tantalum films on a silicon surface

Ultra thin tantalum-based diffusion barriers are of great interest in copper metallisation technology. Even the smallest amounts of copper that diffuse into the active silicon regions on a microprocessor will alter their semiconducting properties thus leading to failure of the device. In the present work Ta films were deposited on silicon by electron beam evaporation and magnetron sputtering. The background of this study is investigation of interface formation, which is expected to have substantial influence on the properties of thin Ta films. All experiments were carried out under UHV conditions. This was necessary because Ta is a very reactive metal and is readily oxidized even at low oxygen partial pressure. The Ta4f peak, as a sensitive indicator of the chemical state, was analysed and compared to that for standard samples. Silicide formation is assumed to occur at the Ta/Si interface.     

Rupture of thin liquid films induced by impinging air-jets

Thin liquid films on partially wetting substrates are subjected to laminar axisymmetric air-jets impinging at normal incidence. We measured the time at which film rupture occurs and dewetting commences as a function of diameter and Reynolds number of the air-jet. We developed numerical models for the air flow as well as the height evolution of the thin liquid film. The experimental results were compared with numerical simulations based on the lubrication approximation and a phenomenological expression for the disjoining pressure. We achieved quantitative agreement for the rupture times. We found that the film thickness profiles were highly sensitive to the presence of minute quantities of surface-active contaminants.     

Experiments on the motion of drops on a horizontal solid surface due to a wettability gradient

Results from experiments performed on the motion of drops of tetraethylene glycol in a wettability gradient present on a silicon surface are reported and compared with predictions from a recently developed theoretical model. The gradient in wettability was formed by exposing strips cut from a silicon wafer to dodecyltrichlorosilane vapors. Video images of the drops captured during the experiments were subsequently analyzed for drop size and velocity as functions of position along the gradient. In separate experiments on the same strips, the static contact angle formed by small drops was measured and used to obtain the local wettability gradient to which a drop is subjected. The velocity of the drops was found to be a strong function of position along the gradient. A quasi-steady theoretical model that balances the local hydrodynamic resistance with the local driving force generally describes the observations; possible reasons for the remaining discrepancies are discussed. It is shown that a model in which the driving force is reduced to accommodate the hysteresis effect inferred from the data is able to remove most of the discrepancy between the observed and predicted velocities.     

Molecular thin films on solid surfaces: mechanisms of melting

We use molecular dynamics simulations to study the melting of pentane and hexane monolayers adsorbed on the basal plane of graphite. For both of these systems, the temperature-dependent structures and the melting temperatures agree well with experiment. A detailed analysis reveals that a mechanism involving the promotion of molecules to the second layer underlies melting in these systems. In the second-layer promotion mechanism, a small fraction of molecules transition into the second layer around the melting temperature, leaving vacant space in the first layer to facilitate disordering. The second-layer promotion mechanism arises because of the weaker molecule-surface interaction in our study than that in previous studies. The weaker molecule-surface interaction is consistent with experimental temperature-programmed desorption studies.     

Enhanced electrical percolation due to interconnection of three-dimensional pentacene islands in thin films on low surface energy polyimide gate dielectrics

The role of lateral interconnections between three-dimensional pentacene islands on low surface energy polyimide gate dielectrics was investigated by the measurement of the surface coverage dependence of the charge mobility and the use of conducting-probe atomic force microscopy (CP-AFM). From the correlation between the electrical characteristics and the morphological evolution of the three-dimensionally grown pentacene films-based field-effect transistors, we found that during film growth, the formation of interconnections between the three-dimensional pentacene islands that are isolated at the early stage contributes significantly to the enhancement process of charge mobility. The CP-AFM current mapping images of the pentacene films also indicate that the lateral interconnections play an important role in the formation of good electrical percolation pathways between the three-dimensional pentacene islands.     

Photophysical and electrochemical behavior of thin solid films based on a three-dimensional ruthenium complex network

RuL ₃ ²⁺ (L=2,2′-bipyridine-4,4′-diphosphonic acid) thin solid films were fabricated by three-dimensional linking between the phosphonic acid substituents of L and Zr(O)Cl₂. The RuL₃ chromophores in the films are electronically independent of each other in the ground state and give emission spectra essentially identical to that of RuL ₃ ²⁺ in solution, although the emission lifetime is much shorter. The films are electrochemically active, showing pseudo-reversible oxidation behavior in cyclic voltammetry. A preliminary attempt has been made to apply these films to photoelectrochemical cells.     

Characterization of very low thermal conductivity thin films

Characterization of thermal transport in nanoscale thin films with very low thermal conductivity (<1 W m^?1 K^?1) is challenging due to the difficulties in accurately measuring spatial variations in temperature field as well as the heat losses. In this paper, we present a new experimental technique involving freestanding nanofabricated specimens that are anchored at the ends, while the entire chip is heated by a macroscopic heater. The unique aspect of this technique is to remove uncertainty in measurement of convective heat transfer, which can be of the same magnitude as through the specimen in a low conductivity material. Spatial mapping of temperature field as well as the natural convective heat transfer coefficient allows us to calculate the thermal conductivity of the specimen using an energy balance modeling approach. The technique is demonstrated on thermally grown silicon oxide and low dielectric constant carbon-doped oxide films. The thermal conductivity of 400 nm silicon dioxide films was found to be 1.2 W m^?1 K^?1, and is in good agreement with the literature. Experimental results for 200 nm thin low dielectric constant oxide films demonstrate that the model is also capable of accurately determining the thermal conductivity for materials with values <1 W m^?1 K^?1.     

Kinetics of phenol oxidation with ozone in a thin layer on a solid surface

Ozone has been reacted with phenol in thin supported layers, and the dynamics of this reaction has been investigated. The stoichiometry of this reaction coincides with the stoichiometry of the same reaction in solution. Specific reaction rate (β) has been determined for various phenol conversions. The effective rate constant of the reaction, estimated by extrapolating β to zero reaction time, is significantly higher than the rate constant of the reaction in solution. The reaction between ozone and phenol is diffusion-controlled. The reaction products form a barrier layer, which protects the deeper phenol layers against ozone. The barrier layer is as thick as 8–15 phenol monolayers.     

Analysis of thin solid films and surfaces by infrared spectroscopy

Thin solid films and surfaces are characterized by IR spectroscopy, based on reflectance and transmittance measurements, in particular with polarized light at oblique incidence. Thus two independent data sets fors- andp-polarization are available. Atp-polarization additional absorption lines at the zeros of the dielectric function are observed (Berreman-mode). The interpretation of the measured spectra is carried out by a fit procedure to simulate the observed spectra. As a result the specimens are characterized in terms of vibronic resonances and their oscillator strengths or concentration, thicknesses of various films in a stack of layers, profiles of depth depending chemical composition, or concentration and mobility of conduction electrons.All examples are relevant for application in technology, as microelectronics, thin film technology, catalysis, e.g. The results of the IR analysis are compared with those of other analytical methods as SIMS, RBS, and AES. The agreement is very good. One important advantage of the IR analysis, however, is the fact that it is a non-destructive method.