Gate-voltage dependence of zero-bias anomalies in multiwall carbon nanotubes

Temperature dependence of zero-bias conductance of the vanadium (V)/multiwall carbon nanotube (MWNT)/V structure is studied. As temperature is reduced, the conductance decreases with a functional form consistent with a power law. For the first time, we find that the exponent depends significantly on gate voltage. This exponent dependence cannot be explained by Luttinger-liquid theory for ballistic MWNTs. We interpret the obtained results within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.     

Conductance of small molecular junctions

A new method of fabricating small metal-molecule-metal junctions is developed, approaching the single-molecule limit. The conductance of different conjugated molecules in a broad temperature, source-drain, and gate voltage regime is reported. At low temperature, all investigated molecules display sharp conductance steps periodic in source-drain voltage. The position of these steps can be controlled by a gate potential. The spacing corresponds to the energy of the lowest molecular vibrations. These results show that the low-bias conductance of molecules is dominated by resonant tunneling through coupled electronic and vibration levels.     

Variation of co-tunneling and Kondo effects by control of the strength of coupling between a vertical dot and a two-dimensional electron gas

We have fabricated a vertical quantum dot with lateral coupling, modulated by a split gate voltage, to a two-dimensional electron. We thereby control not only electron configurations but also the strength of coupling between the dot and the lateral lead, by applying gate voltages. We have measured the conductance enhancement when the applied bias exceeds the single-electron excitation energy, in the Coulomb blockade regime. This conductance enhancement disappears as the split gate voltage decreases (reducing the coupling). This indicates that this enhancement is caused by inelastic co-tunneling. Furthermore, we observed a conductance enhancement at zero source–drain bias with stronger coupling. An anomaly is observed that we attribute to Kondo resonance between the dot and the leads.     

Nonlinear conductance of long quantum wires at a conductance plateau transition: where does the voltage drop?

We calculate the linear and nonlinear conductance of spinless fermions in clean, long quantum wires, where short-ranged interactions lead locally to equilibration. Close to the quantum phase transition, where the conductance jumps from zero to one conductance quantum, the conductance obtains a universal form governed by the ratios of temperature, bias voltage, and gate voltage. Asymptotic analytic results are compared to solutions of a Boltzmann equation which includes the effects of three-particle scattering. Surprisingly, we find that for long wires the voltage predominantly drops close to one end of the quantum wire due to a thermoelectric effect.     

Selecting wave function states in open quantum dots

We study how wave function scarring in an open quantum dot is influenced as the strength of its environmental coupling is varied and show evidence for groups of wave function scars that recur periodically with gate voltage. The precise form of these scars is found to evolve with gate voltage, which we discuss in terms of the properties of the semi-classical orbits that give rise to the scars. We also provide convincing experimental evidence for a correlation between the scars and the oscillations observed in the conductance when the gate voltage is varied.     

Tunneling transport in topological insulator normal metal/insulator/d-wave superconductor junctions

We investigate the tunneling conductance in a normal metal/insulator/d-wave superconductor (NM/I/d-wave SC) junction with a barrier of thickness d and with an arbitrary gate voltage V(0) applied across the barrier region, formed on the surface of a topological insulator, using the Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk?(BTK) formalism. We find that the tunneling conductance as a function of both d and V(0) displays an oscillatory behavior whose amplitude decreases with increase of V(0). We also find that when the Andreev resonant condition is met, the tunneling conductance approaches a maximum value of 2G(0), independent of the gate voltage V(0).     

Fano versus Kondo resonances in a multilevel "semiopen" quantum dot

Linear conductance across a large quantum dot via a single level epsilon(0) with large hybridization to the contacts is strongly sensitive to quasibound states localized in the dot and weakly coupled to epsilon(0). The conductance oscillates with the gate voltage due to interference of the Fano type. At low temperature and Coulomb blockade, Kondo correlations damp the oscillations on an extended range of gate voltage values, by freezing the occupancy of the epsilon(0) level itself. As a consequence, the antiresonances of Fano origin are washed out. The results are in good correspondence with experimental data for a large quantum dot in the semiopen regime.     

Quantum antidot as an electrometer:Observation of fractional charge

In experiments on resonant tunneling through a quantum antidot in the quantum Hall (QH) regime, we observe periodic conductance peaks both versus magnetic field and a global gate voltage, i.e., electric field. Each conductance peak can be attributed to tunneling through a quantized antidot-bound state. The fact that the variation of the uniform electric field produces conductance peaks implies that the deficiency of the electrical charge on the antidot is quantized in units of charge of quasiparticles of surrounding QH condensate. The period in magnetic field gives the effective area of the antidot state through which tunneling occurs, the period in electric field (obtained from the global gate voltage) then constitutes a direct measurement of the charge of the tunneling particles. We obtain electron charge C in the integer QH regime, and quasiparticle charge C for the QH state.     

Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage

A silicon nanowire （Si-NW） sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the electrical conductance of the sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied. To improve the conductance and sensitivity, a Si-NW sensor with nanoscaie side gate voltage is offered and its characteristics are theoretically achieved. It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages. This effect is compared to a similar fabricated structure in the literature, which has a wire with a rectangular cross section. Finally, the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.     

Electronic transport properties of metallic single-walled carbon nanotubes

We have calculated the differential conductance of metallic carbon nanotubes by the scatter matrix methon.It is found that the differential conductance of metallic nanotube-based devices oscillates as a function of the bias voltage between the two leads and the gate voltage.Oscillation period T is directly proportional to the reciprocal of nanotube length.In addition,we found that electronic transport properties are sensitive to variation of the length of the nanotube.     

Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization

We show that four-terminal measurements of the differential conductance of field effect transistors (FETs) can provide important insights into the transport mechanism, and in particular can reveal the presence of ballistic transport. Measurements and simulations of purposely fabricated AlGaAs–GaAs heterostructure FETs show that ballistic transport results in a pronounced peak in the derivative of the differential conductance versus the gate voltage, which splits into two peaks with increasing drain-to-source voltage. Analyzing the four-probe conductance, ballistic electron transport through the channel is revealed as the origin of the observed peak splitting.     

Out of equilibrium Anderson model: Conductance and Kondo temperature

We calculate the conductance through a quantum dot weakly coupled to metallic contacts by means of the Keldysh out of equilibrium formalism. We model the quantum dot with the SU(2) Anderson model and consider the limit of infinite Coulomb repulsion. The interacting system is solved with the numerical diagrammatic Non-Crossing Approximation (NCA) and the conductance is obtained as a function of temperature and gate voltage from differential conductance (dI/dV) curves. We discuss the results in comparison with those from the linear response approach which can be performed directly in equilibrium conditions. Comparison shows that out of equilibrium results are in good agreement with the ones from linear response supporting reliability of the method employed. The last discussion becomes relevant when dealing with general transport models through interacting regions. We also analyze the evolution of conductance vs gate voltage with temperature. While at high temperatures the conductance is peaked, when the Fermi energy coincides with the localized level it presents a plateau at low temperatures as a consequence of the Kondo effect. We discuss different ways to determine Kondo's temperature.     

A superconductor/semiconductor/superconductor junction with a long-split gate

Measurements of superconducting and normal transport in a superconductor/semiconductor/superconductor junction with a long-split gate show that when the two-dimensional electron gas in the semiconductor is put into the pinched-off state by applying a gate voltage, the two superconducting electrodes couple through a long and narrow channel with a small number of modes. Multiple Andreev reflections the focusing of Andreev-reflected holes are observed in this situation, but the supercurrent decreases quickly as gate voltage is increased and it disappears when the channel is long and narrow. A sharp conductance peak due to the coherent motion of the electrons and holes in the narrow channel is also observed.     

AlGaAs/GaAs异质结中的平行电导效应

本文计算了AlGaAs/GaAs异质结在大栅压下,出现“平行电导效应”时的栅压与平行导电层中电荷的关系。由此给出了高电子迁移率晶体管(HEMT)在大栅压时跨导变化的特性,与实验进行了比较,符合较好。 关键词：     

Interacting quantum wires: A possible explanation for the 0.7 anomalous conductance

We investigate an effective one-dimensional conducting channel considering both the contact umklapp and the Coulomb electron-electron interaction. We show that, at low electronic density, the proximity to the Wigner crystal reproduces the anomaly in conductance at 0.7G₀. The crucial ingredient of our theory is the fact that the gate voltage acts as a bias controlling the intensity of the umklapp term. At large gate voltages, the umklapp vanishes and we obtain a conducting quantum wire with a perfect conductance. At low gate voltages, the Wigner crystal is pinned by the umklapp term, giving rise to an insulating behavior with vanishing conductance. This crossover pattern has a transition point which can be identified with the anomalous conductance around 0.7G₀. This picture is obtained within the framework of a renormalization group calculation. The conductance static regime is achieved by taking first the limit of finite length and then the limit of zero frequency.     

Tomonaga-Luttinger liquid and Coulomb blockade in multiwall carbon nanotubes under pressure

We report that the conductance of macroscopic multiwall nanotube (MWNT) bundles under pressure shows power laws in temperature and voltage, as corresponding to a network of bulk-bulk connected Tomonaga-Luttinger liquids (LLs). Contrary to individual MWNTs, where the observed power laws are attributed to Coulomb blockade, the measured ratio for the end and bulk obtained exponents, approximately 2.4, can be accounted for only by LL theory. At temperatures characteristic of interband separation, it increases due to thermal population of the conducting sheets unoccupied bands.     

Generation of Fabry–Pérot oscillations and Dirac state in two-dimensional topological insulators by gate voltage

We investigate electron transport through Hg Te ribbons embedded by strip-shape gate voltage through using a nonequilibrium Green function technique. The numerical calculations show that as the gate voltage is increased, an edgerelated state in the valence band structure of the system shifts upwards, then hangs inside the band gap and merges into the conduction band finally. It is interesting that as the gate voltage is increased continuously, another edge-related state in the valence band also shifts upwards in the small-k region and contacts the previous one to form a Dirac cone in the band structure. Meanwhile in this process, the conductance spectrum displays as multiple resonance peaks characterized by some strong antiresonance valleys in the band gap, then behaves as Fabry–P′erot oscillations and finally develops into a nearly perfect quantum plateau with a value of 2e~2/h. These results give a physical picture to understand the formation process of the Dirac state driven by the gate voltage and provide a route to achieving particular quantum oscillations of the electronic transport in nanodevices.     

Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

The effect of high overdrive voltage on the positive bias temperature instability(PBTI)trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT)with LPCVD-SiNx gate dielectric.A higher overdrive voltage is more effective to accelerate the electrons trapping process,resulting in a unique trapping behavior,i.e.,a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence.Combining the degradation of electrical parameters with the frequency–conductance measurements,the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time,new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.     

Interference and interactions in mesoscopic rings

We consider a mesoscopic ring connected to external reservoirs by tunnel junctions. The ring is capacitively coupled to an external gate electrode and may be pierced by a magnetic field. Due to strong electron–electron interactions within the ring the conductance shows Coulomb blockade oscillations as a function of the gate voltage, while Aharonov–Bohm interference effects lead to a dependence on the magnetic flux. The Hamiltonian of the ring is given by a Luttinger model that allows for an exact treatment of both interaction and interference effects. We conclude that the positions of conductance maxima as a function the external parameters can be used to determine the interaction parameter , and the shapes of conductance peaks are strongly affected by electron correlations within the ring.     

Conductance oscillations and transport spectroscopy of a quantum dot

Results are reported for low temperature measurements of the conductance through small regions of a two-dimensional electron gas (2 DEG). An unconventional GaAs heterostructure is used to form a 2 DEG whose density can be tuned by the gate voltage applied to its conductive substrate. Electron beam lithography is used to pattern a narrow channel in the 2 DEG interrupted by two constrictions, defining a small 2 DEG island between them. The conductance is found to oscillate periodically with the gate voltage, namely with electron density. Calculations of the capacitance between the substrate and the island show that the period of oscillation corresponds to adding one electron to the island. The oscillatory behavior results primarily from the discreteness of charge and the Coulomb interaction between electrons. However, the observed temperature dependence of these oscillations requires a more sophisticated treatment which includes the quantized electron energy levels as well. The magnetic field dependence of the oscillations allows us to extract the discrete energy spectrum of the quantum dot in the quantum-Hall regime.