分子筛组装单质半导体碲的拉曼光谱

无机介孔材料MCM41是高有序,直孔道介孔分子筛,具有孔径约4nm的一维均匀孔道,孔壁厚约1nm,介孔体积可达40%,是一种很理想的组装材料主体。半导体碲位于第Ⅵ族,其六方相的晶格排列呈螺旋链状结构。本文采用固相合成反应方法,将单质半导体碲成功地组装在MCM41介孔分子筛中。在组装体中,单质半导体碲保持着六方相的晶体结构,其拉曼晶体振动表现出纳米晶体的结构特征。真空热处理实验表明,组装体具有良好的热稳定性。Te的六方相和所具有的独特的螺旋链状结构使Te分子很容易进入MCM41的直孔道内,同时MCM41均匀而规则的直孔道限制了Te螺旋链的随机排列,因而被组装在直孔道内的Te能螺旋链式生长,形成一维半导体纳米晶体,排列均匀,尺寸单一,具有稳定的空间构型     

Electrical,thermal and spectroscopic studies of Te doped polyaniline

In the present paper, we have reported the chemical synthesis and characterization of polyaniline doped with tellurium. The aniline was polymerized by chemical oxidation using ammonium persulphate as an oxidant and was doped with different concentrations of tellurium. Doped PANI was characterized by using FTIR, DSC and two-probe conductivity measurement. The dc conductivity has been measured to see the effect of tellurium and its mechanism has been explained by the formation of polarons and bipolarons that move along the polymer chain, and gives rise to the electrical conductivity. The observed increase in conductivity of polyaniline is attributed due to the incorporation of Te into the PANI chain. Glass transition temperature (T_g) and enthalpy (ΔH) have been calculated from DSC measurements. FTIR spectra suggest the structural changes after incorporation of Te in polymeric chain.     

125Te NMR tomography of [Re6] cluster in Re6Te15 and related cluster compounds

The static and magic angle spinning NMR solid-state spectra of Re6Te15 and a series of Re(6)-Te cluster compounds demonstrate the positive and negative 125Te NMR chemical shifts indicating that the [Re6] cluster distorts strongly magnetic field at the neighboring Te sites. The local magnetic field is decreased at the facial tellurium sites (Teface) and enhanced at the apexial tellurium sites (Teapex). The facial and sagittal sections of the Re(6)-Te clusters were reconstructed from analysis of Teface and Teapex NMR spectra, respectively.     

Se，Te纳米线系统的结构稳定性研究

采用第一性原理计算及经验方法研究了Se，Te纳米线的结构稳定性. Se与Te的晶体是由三角Se，Te原子链构成并且链间相互作用相对较弱. 小直径的纳米线(<30?)进行了第一性原理计算； 同时对于大直径的纳米线，采用了一种只考虑了链间相互作用的经验方法. 六边形截面的构型比其他各种结构都要稳定，虽然在原子链数目的限制下无法保证其为正六边形. 该结论与被广泛接受的Se，Te纳米线的六边形稳定结构相一致. 关键词： 第一性原理 纳米线 硒 碲     

Local structure of amorphous tellurium studied by EXAFS

The local structure of an amorphous tellurium (a‐Te) film was investigated by extended X‐ray absorption fine‐structure analysis. The covalent bond length shortens and the Debye–Waller factor of the intra‐chain decreases in a‐Te compared with trigonal Te (t‐Te). The value of the intra‐chain coordination number is close to two, which is the value for t‐Te, and the inter‐chain interaction weakens. These results suggest that the primary chain structure remains intact, but the secondary structure is disrupted. The decrease in the inter‐chain interaction strengthens the intra‐chain interaction.     

Proprietes electroniques et electrogalvaniques du tellurure d'argent α domaine d'existence

A study of the electronic and electrogalvanic properties of α silver telluride has been performed on samples whose non-stoiehiometry has been determined by coulometric titration with the cell Ag/AgI/Ag₂Te/Pt. The data lead to the adoption of a model of Frenkel defects on the silver sublattice that are fully ionised. The homogeneity range is reported from 162 to 508°C: it extends essentially on the tellurium side of the stoichiometric composition. The free energies of formation of the α and β forms of the tellurides whose compositions are near Ag_1,6Te, Ag_1,9Te and Ag_2,0Te have been determined between 23°C and 360°C.     

Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.     

Solubility and point defect-dopant interactions in GaAs —I: Tellurium doping

The point defect model described in the companion paper is used to construct solubility relations, predict the effects of heat treatment and account for the large lattice dilations in tellurium doped GaAs.The complexing of Te donors with gallium vacancies is shown to be very important and can be used to explain electrical compensation, the formation of interstitial dislocation loops and the “superdilation” of n⁺ material.     

Yrast excitations in A = 126–131 Te nuclei from deep inelastic 130Te+64Ni reactions

Thick target γγ coincidence measurements for the system ¹³⁰Te + 275 MeV ⁶⁴Ni have been performed using the GASP Ge detector array at Legnaro. For the isotopic assignments of previously unknown γ-ray cascades, prompt γγ coincidences observed between Te and Ni partner products were of vital importance. The results yield much new information about excited states of moderate spins in A = 126–131 tellurium nuclei, especially about yrast excitations of the little studied odd-A isotopes ¹²⁷Te, ¹²⁹Te, and ¹³¹Te. Level systematics of tellurium nuclei are presented, and both single-particle and collective aspects of the level spectra are discussed.     

Mass-spectrometric study of tellurium-film condensation and evaporation on sapphire

The processes of the condensation and evaporation of a tellurium film produced by a molecular beam of Te₂ on a sapphire surface are studied. It is experimentally shown that the desorption of tellurium from a surface upon growth under nonequilibrium conditions exceeds the equilibrium thermal desorption. If the beam intensity is less than the equilibrium value, then desorption is also lower than the equilibrium value. A model of this process with allowance for the transient states of tellurium in the adsorption layer is proposed. Within this model equilibrium and Langmuir beams are expressed in terms of the process parameters. The reflection coefficient of the beam is also a function of the process characteristics. The experimental data make it possible to estimate some of the basic parameters of the process, including the coverage and desorption rate in the adsorption layer. Taking these results into account is important for manufacturing perfect films not only of Te, but also of CdTe.     

TeOx薄膜结构及短波长静态记录特性的研究

以真空蒸镀法在K9玻璃基底上制备了TeO_x单层薄膜.使用X射线光电子能谱仪(XPS)、X射线衍射仪(XRD)、原子力显微镜(AFM)对薄膜的结构进行了分析.实验结果表明,薄膜是由晶态Te分散在非晶态TeO₂基体中形成的混合体系,TeO₂基体的存在增强了Te的抗氧化性能;薄膜具有精细粒状结构和粗糙的表面;退火后薄膜的反射率增加和Te向表面的偏析、重聚集及表面粗糙度的降低有关.采用波长为514.4nm的短波长静态记录仪对薄膜静态记录性能的测试结果表明:薄膜具有良好的记录灵敏性,在记录功率1.5mW、脉宽50ns时就可产生较高的反射率衬比(度).研究结果为选择合适掺和物使TeO_x薄膜实际用作高密度光存储介质有重要意义.     

强磁场对真空蒸镀制取Te薄膜的影响

采用强磁场下物理气相沉积方法,在单晶硅、玻璃板和聚乙烯（PET）基片上真空蒸发制取Te膜.结果显示在三种不同的基片上生长Te膜时,4 T强磁场能够加快Te膜的形核长大,增大Te膜的颗粒尺度,使晶粒〈011〉方向取向性增强. 关键词： 真空蒸镀 强磁场 晶面取向 Te薄膜     

Vanadyl phthalocyanine: An organic material for optical data recording

Vanadyl Phthalocyanine (VOPc) is a stable organic dye which absorbs in the spectral range of currently available injection lasers. The applicability for high density optical storage of single, double and triple layer structures containing a thin film of this dye, is investigated. It is concluded that if VOPc is used in combination with a tellurium film, some power reduction relative to single Te films can be achieved.     

Specific features of Raman spectra of III–V nanowhiskers

Raman spectra of GaAs nanowhiskers that are grown on different substrates and differ from one another by the content of the sphalerite and wurtzite phases have been investigated. Special attention has been focused on the manifestation of structural features in the scattering spectra of nanowhiskers. It has been established that the nanowhiskers are characterized both by random inclusions of wurtzite layers in the sphalerite structure and by the continuous growth in the wurtzite phase. The interpretation of the scattering spectrum agrees with the concept of summation of the dispersion curves of the sphalerite structure upon transition to the wurtzite structure, which leads to a transformation of zone-boundary modes at the L point of the Brillouin zone into zone-center modes of the wurtzite structure and, as a consequence, to the appearance of a number of new fundamental modes of different symmetries. An analysis of the Raman spectra has revealed the formation of the hexagonal 4H polytype in narrow layers of nanowhiskers due to a random packing of hexagonal layers. The coexistence of the sphalerite and wurtzite phases in GaAs nanowhiskers completely correlates with the photoluminescence spectra measured for the same samples.     

催化动力学分析法测定粗硒粉中微量碲的研究

提出基于Te(Ⅳ)催化S2-还原亚甲基蓝褪色反应,建立了新的测定微量碲的动力学分析方法。研究了催化反应条件,并测定了催化反应的表观活化能为68.94 kJ·mol-1,反应速率常数为1.63×10-2 s-1。Te(Ⅳ)浓度在20～220 ng·mL-1范围内服从比尔定律,回归曲线的线性方程为y=0.003 8x+0.219 1,相关系数r=0.999 5,方法的检出限为3.04 ng·mL-1。应用于粗硒粉中微量碲的测定,相对标准偏差为3.1%(n=7),加标回收率为98.4%～100.4%。     

Ordered tellurium nanowire arrays and their optical properties

High-density tellurium (Te) nanowire arrays were prepared in the nanochannels of an anodic aluminum membrane (AAM) template using the electrochemical deposition method. The as-synthesized Te nanowires, typically 60 nm in diameter and up to 40 μm in length, possess a hexagonal single crystalline structure following [001] growth direction. The optical polarization properties of Te nanowire arrays embedded in AAM were investigated using an optic parameter oscillator in the wavelength range from 0.7 to 1 μm. The high optical polarization of the Te nanowire arrays embedded in the AAM assembly system was observed. PACS 81.05.Cy; 78.67.-n; 82.80.Fk.     

1H NMR Study of Some Thiosalicylic Acid Complexes

Five thiosalicylic acid (TSA) complexes were prepared. The ¹H NMR of these complexes were recorded and analysed. It was found that molybdenum, arsenic, selenium, silver and tellurium metals coordinates through the sulfur atom. The ¹H NMR chemical shift of ring protons of As, Se and Te shift to low field upon complexation, while it shifts to high field when TSA complex with Ag and Mo     

Simultaneous Determination of Se and Te in Ores by HG-AFS After Online Preconcentration with Nano-TiO2 Immobilized on Silica GelSCIEI北大核心CSCD

A simple, sensitive and interference-free method was established for simultaneous determination of trace selenium and tellurium in ore samples by HG-AFS, by using nano-TiO2-immobilized on a silica gel packed microcolumn for online preconcentration. Selenium and tellurium were selectively adsorbed to the microcolumn in acidic condition and then completely eluted with 2% (m/v) NaOH solution. The experimental conditions for hydride generation, adsorption, elution and potential interference were investigated in detail. Under the optimum conditions, the detection limits of selenium and tellurium by the proposed method with 180 s sampling time were 4.0 and 3.6 ng.L-1, with sensitivity enhancement of 20- and 13-fold compared to conventional hydride generation method, respectively. The relative standard deviation (RSD, n=5) of this method for 1 mu g.L-1 Se(IV) and Te(IV) were 0.7% and 2.3, respectively. This method was applied to determination of selenium and tellurium in several ore samples.     

Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

The crystal structure of GaAs nanowhiskers grown by molecular-beam epitaxy on Si(111) and Si(100) substrates is investigated using reflection high-energy electron diffraction (RHEED). It is revealed that, in both cases, the electron diffraction images contain a combination (superposition) of systems of reflections characteristic of the hexagonal (wurtzite and/or 4H polytype) and cubic (sphalerite) phases of the GaAs compound. The growth on the Si(111) substrates leads to the formation of nanowhiskers with hexagonal (wurtzite and/or 4H polytype) and cubic (sphalerite) structures with one and two orientations, respectively. In the case of the Si(100) substrates, the grown array contains GaAs nanowhiskers that have a cubic structure with five different orientations and a hexagonal structure with eight orientations in the (110) planes of the substrate. The formation of the two-phase crystal structure in nanowhiskers is explained by the wurtzite—sphalerite phase transitions and/or twinning of crystallites.     

Structure and luminescence properties of tellurium(IV) complex compounds

Using the tellurium(IV) complex compounds as an example, we study the interrelation between the geometric structure and spectral luminescence properties. We find that, in the series of compounds of Te(IV), which are characterized by the island octahedral coordination of Te(IV) ions, the luminescence intensity depends on the degree of distortion of the Te(IV) coordination polyhedron, the Stokes shift, and the energy of the luminescence transition. We revealed that the considered series of Te(IV) compounds possess reversible thermochromic properties.