A modified zone growth method for an InGaAs single crystal

We have been developing a zone growth method for an In_xGa_1−xAs single crystal with a uniform InAs composition, using an InGaAs source, InGaAs melt and InGaAs seed charged in a crucible. This time, we modified the zone growth method to increase the length of an InGaAs zone crystal. A gap created between the wall around the InGaAs source and the inner wall of the crucible effectively prevents the interruption in normal zone growth because it changes the directions of heat current in the source. In addition, we found that it is very important for single crystal growth that no rotation of the crucible takes place during zone growth, because the degree of mixing caused by melt convection is reduced. The zone growth region of the obtained InGaAs crystal is almost exclusively of single-crystal-type, and it is about 26 mm long, which is 1.5 times the region length of the zone single crystal reported previously. We believe that a longer growth period could have further increased the length of our zone crystal, because some of the source remained. The InAs composition (x) of the zone crystal is greater than 0.3, and the crystal diameter is 15 mm.     

GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

GaN epilayers are grown on (1 1 1) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial wurtzite GaN film is obtained. The surface morphology is smooth: the rms roughness is as low as 1.3 nm for 2×2 μm² scan. Photoluminescence measurements reveal pretty good optical properties. The GaN band edge is centred at 3.469 eV with a linewidth of 5 meV. These results demonstrate that GaN heteroepitaxially grown on diamond opens new rooms for high power electronic applications.     

Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy

Crack-free aluminum nitride (AlN) epilayers were grown on sapphire using growth-interrupt technique by radio-frequency assisted molecular beam epitaxy. In-situ reflectance spectroscopy was introduced for real-time monitoring of the growth of AlN epilayers. X-ray diffraction and atomic force microscopy measurements reveal that the threading dislocation density decreases considerably by using the growth-interrupt technique. Raman spectroscopy is used to characterize the residual stress of AlN epilayers. The optical transmittance and absorption spectra of AlN epilayers show a high transmittance and a sharp absorption edge.     

AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

AlN is generally used as buffer layer for the epitaxial growth of GaN on Si(1 1 1) substrate. In this work, we specifically address the relationship between the way the AlN growth is initiated on the Si(1 1 1) surface and the overall properties of the final GaN epitaxial layer. The growth is performed by molecular beam epitaxy with ammonia (NH₃) as nitrogen source. Two procedures have been compared: exposing the Si surface first to NH₃ or Al. The AlN nucleation is followed in real-time by reflection high-energy electron diffraction and critical stages are also investigated in real space using scanning tunnelling microscopy and transmission electron microscopy. Atomic force microscopy, X-ray diffraction and photoluminescence are also used to assess the properties of the final GaN epitaxial layer. It is shown that best results in terms of GaN overall properties are obtained when the growth is initiated by exposing the Si(1 1 1) surface to NH₃ first. This is mainly due to the fact that almost an order of magnitude decrease of the dislocation density is obtained.     

Growth and properties of semi-polar GaN on a patterned silicon substrate

Adopting anisotropy etching method, a (1 1 1) facet of Si is obtained on a Si substrate and selective area growth (SAG) of GaN is performed with metal-organic vapor phase epitaxy on the facet. The epitaxial lateral overgrowth of (1 1¯ 0 1), (1 1 2¯ 2) GaN is investigated on (0 0 1) and (1 1 3) Si substrate, respectively, and the incorporation properties of Si, C, and Mg elements are discussed in relation to the atomic configuration on the surface. Analyzing the optical and electrical properties of C-doped (1 1¯ 0 1) GaN layer, it is shown that carbon creates a shallow acceptor level. On the thus prepared (1 1¯ 0 1) GaN layer, a light emitting diode (LED) with a C-doped p-type layer is fabricated.     

Determination of the supersaturation in the LiIO3–HIO3–H2O system using a refractive index value at near saturation concentration

The exact determination of supersaturation is essential for the studies of crystal growth processes in solutions. Due to peculiarities in the solubility of LiIO₃, the refractive index of the solution is chosen as a measure of the supersaturation instead of undercooling. The experimental setup is based on a refractometer and a special setup to create supersaturation in the cuvette by means of successive evaporation of small amounts of solvent. The refractive index is measured at different solution concentrations and pH and the data are correlated as dependences of concentration and pH on the refractive index. The accuracy of the method and the adequacy of the model are discussed.     

Transmission electron microscopy observations of twin boundaries and sub-boundary networks in bulk CdZnTe crystals

The microstructure characteristics of the twin boundaries and sub-boundary networks in bulk cadmium zinc telluride (CdZnTe) crystals have been studied by transmission electron microscopy (TEM). Three types of twin boundaries were identified and characterized, which are (i) single straight twin boundary, (ii) tilt twin boundary, and (iii) twin boundary with steps. Boundary dislocations at tilt twin boundary and high dislocation density around steps were observed. The origin of the boundary dislocations is ascribed to the lattice misfit between two tilt grains. The formation of the twin boundary with steps is suggested to be the interaction between the twin boundary and dislocations. Honeycomb-like sub-boundary defects were also observed. The probable reason for the formation of the sub-boundary networks is discussed.     

Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate

A freestanding m-plane GaN wafer is fabricated by using the hydride vapor-phase epitaxy (HVPE) technique on an aluminum carbide buffer layer on an m-plane sapphire substrate. X-ray pole-figure measurements show a clear m-plane orientation of the GaN surface. The full-width at half-maximum (FWHM) of GaN (1 1¯ 0 0) X-ray rocking curve (XRC) with the scattering vector along the [1 1 2¯ 0] direction is approximately 800 arcsec; this indicates good crystallinity. On the other hand, the FWHM for the case in which the scattering vector is oriented along the [0 0 0 1] direction is broad; this suggests the influence of structural defects along this direction. In fact, basal plane stacking faults (BSF) with a density of approximately 3×10⁵ cm⁻¹ is observed by transmission electron microscopy (TEM). The preparation of a 45-mm-diameter m-plane GaN wafer due to spontaneous separation of the GaN layer from the sapphire substrate is demonstrated.     

Surface-diffusion induced growth of ZnO nanowires

The growth rate of ZnO nanowires grown epitaxially on GaN/sapphire substrates is studied. An inverse proportional relation between diameter and length of the nanowires is observed, i.e., nanowires with smaller diameters grow faster than larger ones. This unexpected result is attributed to surface diffusion of ZnO admolecules along the sidewalls of the nanowires. In addition, the unique c-axis growth of ZnO nanowires, which does not require a catalytic particle at the tip of the growing nanowires is discussed by taking into account polarity, surface free energy, and ionicity. Activation energies of the nanowire growth are determined as well.     

HVPE growth of semi-polar (1 1 2¯ 2)GaN on GaN template (1 1 3)Si substrate

The hydride-vapour-phase-epitaxial (HVPE) growth of semi-polar (1 1 2¯ 2)GaN is attempted on a GaN template layer grown on a patterned (1 1 3) Si substrate. It is found that the chemical reaction between the GaN grown layer and the Si substrate during the growth is suppressed substantially by lowering the growth temperatures no higher than 900 °C. And the surface morphology is improved by decreasing the V/III ratio. It is shown that a 230-μm-thick (1 1 2¯ 2)GaN with smooth surface is obtained at a growth temperature of 870 °C with V/III of 14.     

Theoretical approach to structural stability of GaN: How to grow cubic GaN

We investigated the growth conditions of cubic GaN (c-GaN) by ab initio-based approach which incorporates free energy of vapor phase. It is known that a c-GaN is a metastable phase and wurtzite GaN (h-GaN), which is a stable phase of GaN, is easily incorporated in the c-GaN crystal during growth. h-GaN is formed in the area grown on {1 1 1} faceted surface. In the present study, therefore, we studied the growth conditions of {1 1 1} facet formation in order to suppress h-GaN mixing. The results suggest that we can suppress the {1 1 1} facet formation, i.e., h-GaN mixing, by controlling the growth conditions such as temperature and gallium beam equivalent pressure.     

Preparation of Sb2S3 nanomaterials with different morphologies via a refluxing approach

Single-crystalline antimony trisulfide (Sb₂S₃) nanomaterials with flower-like and rod-like morphologies were successfully synthesized under refluxing conditions by the reaction of antimony trichloride (SbCl₃) and thiourea with PEG400 and OP-10 as the surfactants. X-ray diffraction (XRD) indicates that the obtained sample is orthorhombic-phase Sb₂S₃ with calculated lattice parameters a=1.124 nm, b=1.134 nm and c=0.382 nm. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images show that the flower-like Sb₂S₃ is 9–10 μm in size, which is composed of thin leaves with thickness of 0.05–0.2 μm, width of 0.8–2.2 μm and length of 2.5–3 μm, and the rod-like Sb₂S₃ is 45–360 nm in diameter and 0.7–4 μm in length, respectively. UV–Vis analysis indicates that the band gap of Sb₂S₃ nanorods is 1.52 eV, suitable for photovoltaic conversion. A possible mechanism of formation was proposed. The effects of reaction time and surfactants on the growth of nanomaterials with different morphologies were also investigated.     

Germanium films with strong in-plane and out-of-plane texture on flexible,randomly textured metal substrates

High efficiencies have been achieved in photovoltaic cells based on III–V compounds grown on single crystal germanium substrates. Since the size of these substrates is limited and their cost is very high, such III–V photovoltaics have not found widespread terrestrial use. The objective of this work is to develop highly textured, epitaxial germanium thin films on inexpensive substrates suitable for roll-to-roll continuous processing to serve as templates for III–V compounds. Germanium films with a high degree of in-plane and out-of plane texture have been demonstrated on randomly textured, flexible nickel alloy substrates by epitaxial growth on template films made by ion beam-assisted deposition (IBAD). In order to achieve epitaxial growth, an intermediate layer of CeO₂ was found to be required between the IBAD MgO template and the Ge film. Our study shows that structural match between Ge and the underlying oxide layer is the key to epitaxial growth. Room temperature optical bandgap of the Ge films was identified at 0.67 eV suggesting minimal residual strain in the film. Refraction index and extinction coefficient values of the epitaxial Ge film were found to match well with that measured from a reference Ge single crystal.     

Two-dimensional modelling and simulation of hydrogenated amorphous silicon p-n-n solar cell

Two-dimensional device modelling for hydrogenated amorphous silicon p⁺-n-n⁺ solar cell has been carried out by using MEDICI^™ device simulator and the influence of absorber layer thickness, doping concentration, and dangling bond density of states in absorber layer on photo parameters are investigated. A strong correlation between n-type doping and dangling bond density in the absorber layer relative to the stability of the a-Si:H solar cell is observed. An increased stabilized efficiency is obtained when n-type dopant concentration in the absorber layer is higher than optimum value for higher initial efficiency. The window layer (p⁺ layer) of the device is designed with a three layered structure of graded doping for higher device performance. This window layer structure in the a-Si:H p⁺-n-n⁺ cell resulted in higher open circuit voltage and fill factor and hence higher efficiency of the cell. The efficiency of the modified amorphous silicon solar cell structure is found to be 12.85%.     

Characterization of pure and urea-doped γ-glycine single crystals grown by solution method

Pure and urea-doped gamma-glycine (γ-glycine) single crystals were grown by solution method with slow evaporation technique. When urea was added as dopant, morphological alterations were noticed in γ-glycine crystals. Structural characterization of the grown crystals was carried out by single and powder X-ray diffraction (XRD) methods and it is observed that the samples crystallize in non-centrosymmetric space groups. UV-visible transmittance studies were performed to analyse optical transparency of pure and urea-doped γ-glycine crystals and found that the crystals were transparent in the entire visible-NIR region. Density and melting point of the grown crystals were measured. Second harmonic generation (SHG) for the grown crystals of this work was confirmed using Nd:YAG laser. Thermogravimetric and differential thermal analyses (TG/DTA) thermograms reveal that the materials have good thermal stability. From Microhardness studies, it is observed that urea-doped γ-glycine crystal is harder than pure (undoped) sample.     

The kinetics of structural relaxation of bulk and ribbon glassy Pd40Cu30N10P20 monitored by resistance and density measurements

Density and in situ high precision electrical resistance measurements on bulk and ribbon glassy Pd₄₀Cu₃₀Ni₁₀P₂₀ in the initial state, after cold rolling and quenching from the supercooled liquid state are performed. Three relaxation stages resulting in different signs of the electrical resistance relaxation are determined. It is shown that the resistance change upon structural relaxation is predominantly controlled by the resistivity relaxation while the volume change has a minor effect on the resistance. Cold rolling has a complex impact on the electrical relaxation similar to the effect of plastic deformation on the dislocation anelasticity in crystals. Quenching of fully relaxed samples from the supercooled liquid state recovers structural relaxation and the amount of the resistance relaxation can be several times bigger than that in the initial state. It is concluded that relaxation of the electrical resistance as dependent on different conditions (bulk/ribbon samples, thermocycling, rolling and the parameters of quenching from the supercooled liquid state) is rather complex but it is unlikely that the degree of the relaxation is governed by the amount of the free volume. This conclusion agrees with the established fact of equal density of initial glassy and crystallized bulk samples and earlier findings of nearly equal shear viscosity of bulk and ribbon samples different by four orders of magnitude in the production quenching rate.     

Application of a conproportionation reaction to a synthesis of shape-controlled gold nanoparticles

Synthesis of gold nanoparticles with multiple shapes by a modified seeding growth method is reported. The optical extinction spectra of a mixture of the seed and growth solutions indicate that the seed particle size decreases during stirring the mixture by a conproportionation reaction of Au metal with Au(III) ions. This conproportionation reaction is used to investigate the effects of variation in seed particle size on the resultant gold nanoparticle shape. When single crystalline and multiply twinned particles are used as the seed particles, they grow into gold nanorods and nanobipyramids, respectively. By letting the seed particles experience the conproportionation reaction before the particle growth to decrease the size, the surface of resultant nanoparticles roughens. Increasing the conproportionation reaction time up to 5 min, multi-branched gold nanoparticles with many lattice defects grow from both of the seed particles. This indicates that the conproportionation reaction is useful to generate lattice defects during the particle growth, which lead to the formation of gold nanoparticles with complex shapes.     

Single-crystal growth of Ti–Nb–Ta–Zr–O alloys and measurement of elastic properties

Single crystals of β-type Ti alloy system Ti–Nb–Ta–Zr–O have been grown successfully in an Ar gas flow by a floating zone method. The growth orientations were determined approximately by using seed crystals with the desired orientations. The various growth conditions were realized by choosing the gas purity, the gas flow rate, and the growth rate as variables. Composition analysis of the grown crystals was done to check any variation from the values of the raw material along with the bulk homogeneity, followed by measurements of the lattice parameter and the hardness, which provides the following results: (1) the composition of oxygen varies with respect to the flow rate, or is increased as the purity is degraded, (2) the lattice parameter is increased with increasing composition of oxygen, (3) which is also the case with the hardness. Measurements of Young's moduli were performed to investigate the elastic properties. The results indicate that the crystals exhibit the anisotropy which was expected previously. The elastic constants were estimated from the moduli, giving the ideal stress 1.7–1.9 GPa which is on a level with the real strength. Additionally, the tensile stress–strain curve for the crystallographic direction 〈1 1 0〉 exhibited nonlinear elasticity and hysteresis.     

Ring- and single-crystal-like superstructures of Fe-doped PbTiO3 nanocrystals

Ring- and single-crystal-like superstructures of Fe-doped PbTiO₃ nanocrystals have been prepared by a simple hydrothermal method using (poly ethylene glycol) (PEG) as a surfactant. Two oriented-attachment forms of the nanocrystals favor the formation of the rings in view of geometry. Magnetism measurement shows that Fe-doped PbTiO₃ sample is ferromagnetic even at room temperature. It is proposed that the magnetic dipole interactions and the presence of PEG molecules could together contribute to the formation of ring- and single-crystal-like superstructures composed of Fe-doped PbTiO₃ nanocrystals.     

Surface biofunctionalization of nanostructured GeSbSe chalcogenide glass thin films

Thin nanostructured chalcogenide films were grown using the oblique angle deposition (OAD) technique and subsequently polymerized with thin poly(amino-p-xylylene) (PPX) films. Our objective was twofold, i.e., to use deposited polymeric thin films to allow the attachment of biomolecules to chalcogenide glass thin films, and at the same time, to increase surface area by OAD to enhance surface functionality. The effectiveness of this approach was evaluated by Fourier transform infrared spectroscopy (FTIR), together with a combination of fluorescent protein immobilization and confocal microscopy characterization. It is shown that the presence of amine groups on the surface of the polymer coated chalcogenide thin films yield a notable increment of surface coverage with proteins at large evaporation oblique angles which is expected to enhance detection performance of the film in biosensor applications.