Some features relevant to switching processes in the amorphous semiconductor Si12Ge10As30Te48

The current-voltage characteristics of the amorphous semiconductor glass Si₁₂Ge₁₀As₃₀Te₄₈ have been measured under various experimenal conditions. The experimental results show that the resistance of the device in the ‘off’ state and the threshold voltage for the onset of switching action decrease with increasing the maximum current (I_p) passing through the device in the ‘on’ state, and that the threshold input power to set in the switching action is practically independent of temperature. The stability and the consistency of the device depend on the magnitude of I_p. When I_p is increased to a certain value the glass within and near the current filament between the electrodes become softened, and when it reaches a critical value the device is changed from its ‘switching-on’ state to a ‘memory’ state. All the results are in good agreement with the model that the filament formed to cause switching consists of a mixture of crystalline domains and amorphous domains with phase separations.     

Crystallization effects in amorphous Cd3As2 films

The amorphous to crystalline transformation due to electron beam or heat treatments was studied. From the results it was concluded that the temperature of the transformation is higher than 300°C - higher than the epitaxy temperature for the deposition process. The a→c transition proceeds in several stages. By using the “cross-cut” method the activation energy for crystallization was estimated to be 2 eV.     

Structural study of amorphous Al0.20As0.50Te0.30, Al0.10As0.40Te0.50 and Al0.10As0.20Te0.70 by X-ray diffraction (II)

A spherical-shaped model of Al_0.20As_0.50Te_0.30, Al_0.10As_0.40Te_0.50 and Al_0.10As_0.20Te_0.70 amorphous alloys has been performed by the random Monte Carlo method. These models describe quite well the experimental radial distribution functions and abide by the expected coordination numbers apart from the threefold coordinated Te, of which an excess has appeared. The structures are formed, basically, of distorted tetrahedra around the Al atoms whose corners are occupied by As or Te atoms. Also, a separated phase model for Al_0.10As_0.20Te_0.70 alloy has been built taking into account the results of thermodynamical study on this amorphous alloy system. The fitting of this model was better than that of the model generated under the hypothesis of a continuous phase.     

Structural study of amorphous Al0.20As0.50Te0.30, Al0.10As0.40Te0.50 and Al0.10As0.20Te0.70 by x-ray diffraction (I)

An analysis of the atomic radial distribution function of Al_0.20As_0.30Te_0.30, Al_0.10As_0.40Te_0.50 and Al_0.10As_0.20Te_0.70 amorphous alloys obtained from quenching of the molten mixture of the elements was performed. A structure in which all the Al atoms are tetrahedrally bonded to the other types of atoms in the material, would satisfy the requirements of the experimental curve. Tetrahedral groups might be linked to each other by As and Te atoms, or directly through a Te or As atom belonging to more than one tetrahedra.     

Photoluminescence from E band centers in amorphous and crystalline SiO2

Photoluminescence (PL) originating from intrinsic defects in neutron-irradiated crystalline (x-) SiO₂ is observed and compared with that from amorphous (a-) SiO₂. The PL and photoluminescence excitation (PLE) spectra of x-SiO₂ are qualitatively similar to those of a-SiO₂. This suggests that PL centers, similar to those found in amorphous systems, are present in ordered systems. In addition, the PL and PLE spectra a-SiO₂ and a-As₂S₃ scale with energy band gap, suggesting that the radiative processes in a-SiO₂ and semiconducting chalcogenide glasses are alike. The similarity of the PL from x-SiO₂ to that from a-SiO₂ and the scaling of the PL from a-SiO₂ and a-As₂S₃ with energy band gap strongly suggest that PL centers are unique bonding configurations which primarily depend on the chemistry of the system rather than on the degree of long range order.     

Enantiomorphism of the Ca3Ga2Ge4O14 compound and comparison of the Ca3Ga2Ge4O14 and Sr3Ga2Ge4O14 structures

The absolute crystal structures of two enantiomorphic forms of the Ca₃Ga₂Ge₄O₁₄ crystals (a = 8.075(1) ?, c = 4.9723(6) ?, space group P321) with the positive and negative senses of the optical activity are determined using X-ray diffraction analysis. The final R factors are as follows: R = 1.75% and R _w = 2.57% for the crystal with the positive sense of the optical activity and R = 1.86% and R _w = 2.78% for the crystal with the negative sense of the optical activity. The replacement of the Ca²⁺ ions by larger Sr²⁺ ions (with the formation of the Sr₃Ga₂Ge₄O₁₄ compound) leads to an anisotropic expansion of the crystal lattice (with a more considerable increase in the lattice parameter a as compared to the lattice parameter c), a change in the occupation of the 1a and 3f positions by the Ga³⁺ and Ge⁴⁺ ions, and symmetrization of the octahedra and tetrahedra forming the structural framework. The shape of the dodecahedron changes so that its size along the polar electric axis 2 increases significantly. This change is the main factor responsible for the increase in the piezoelectric activity of the Sr₃Ga₂Ge₄O₁₄ compound as compared to the piezoelectric activity of the Ca₃Ga₂Ge₄O₁₄ compound. Original Russian Text ? B.V. Mill, A.A. Klimenkova, B.A. Maximov, V.N. Molchanov, D.Yu. Pushcharovsky, 2007, published in Kristallografiya, 2007, Vol. 52, No. 5, pp. 816–823.     

XPS study of glassy Pd80Ge20

An X-ray photoemission and Auger electron spectroscopy study of the electronic structure of Pd₈₀Ge₂₀ alloy in its glassy and crystalline states is reported. The glassy state shows some modifications in the valence band structure, symmetry of the Pd $\text{3}\text{d}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}\text{?3}\text{d}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ spin-orbit doublet and a shift in M₄₅-V-V Auger transition of Pd. Analysis of the chemical shifts in the core-level binding energies of the constituents indicates negligible charge transfer from the metalloid atom (Ge) to d-band of the Pd.     

Electrical conductivity and thermoelectric power of liquid AgSb Te2

The electrical conductivity and thermoelectric power of liquid AgSb Te₂ have been investigated as a function of temperature. Experimental data are analyzed in terms of a recent model proposed by Mott. The activation energy for electrical conductivity and thermoelectric power is found to be approximately 0.50 eV with a large temperature coefficient γ ～ 7 × 10^?4 eV/deg K. The gradual transition from a semiconducting to a metallic behaviour has been observed at high temperature.     

The growth and structure of Pb3Ga2Ge4O14 and Ba3Ga2Ge4O14 single crystals

Conditions for the flux synthesis of Pb₃Ga₂Ge₄O₁₄ and Ba₃Ga₂Ge₄O₁₄ single crystals and their solid solutions Pb_{3 − x} Ba_xGa₂Ge₄O₁₄ are studied. Structural analysis showed that the Ga³⁺-and Ge⁴⁺-cation positions in flux-grown Pb₃Ga₂Ge₄O₁₄ and Ba₃Ga₂Ge₄O₁₄ single crystals are not mixed. __________ Translated from Kristallografiya, Vol. 49, No. 2, 2004, pp. 325–328. Original Russian Text Copyright ? 2004 by Bezmaternykh, Vasil’ev, Gudim, Temerov. This work was presented at the National Conference on Crystal Growth (NCCG-2002, Moscow).     

Pressure and temperature dependence of the electrical resistivity of bulk Al23 Te77 glass

Electrical resistivity of bulk amorphous Al₂₃T₇₇ samples has been studied as a function of pressure (up to 80 kbar) and temperature (down to 77 K). At atmospheric pressure the temperature dependence of resistivity obeys the relation ? = π₀ exp(δE/RT) with two activation energies. In the temperature range 300 K ? T > 234 K the activation energy is 0.58 eV and for 234 >T ? 185 K the value is δE = 0.30 ev. The activation energy has been measured as a function of pressure. The electrical resistivity decreases exponentially with the increase of pressure and at 70 kbar pressure the electrical behaviour of the sample shows a metallic nature with a positive temperature coefficient. The high pressure phase of the sample is found to be a crystalline hexagonal phase.     

AC conductivity of (As2Te3)95Ge5

The elctrical conductivity of amorphous chalcogenide (As₂Te₃)₉₅Ge₅ is investigated at variable frequency, from 1 kHz up to 35 GHz, and a variable temperature, from 77 to 300 K. The low-temperature conductivity is constant with temperature at a fixed frequency. At a fixed temperature, it obeys a ω^0.8 law only at low frequencies. The results are analysed with respect to the polaron problem, but also with a simple model of several dilute localized levels having a wide energy distribution in the forbidden band.     

The crystallization of vitreous and metastable Pb5Ge3O11

Vitreous Pb₅Ge₃O₁₁ was prepared by water quenching and by roller quenching. The crystallization was studied by DTA, X-ray diffraction, and TEM. After a glass transition at 325°C, meta-stable Pb₅Ge₃O₁₁ crystallized exothermically at 370°C. This was subsequently followed by the formation of the stable phase of the same composition, again exothermically at 490°C.     

Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

This paper presents a study of the transition between amorphous and crystalline phases of SiC films deposited on Si(1 0 0) substrate using H₃SiCH₃ as a single precursor by a conventional low-pressure chemical vapor deposition method in a hot-wall reactor. The microstructure of SiC, characterized by X-ray diffraction and high-resolution transmission electron microscopy, is found to vary with substrate temperature and H₃SiCH₃ pressure. The grain size decreases with increasing MS pressure at a given temperature and also decreases with reducing temperature at a given MS pressure. The deposition rates are exponentially dependent on the substrate temperature with the activation energy of around 2.6 eV. The hydrogen compositional concentration in the deposited SiC films, determined by secondary ion mass spectrometry depth profiling, is only 2.9% in the nanocrystalline SiC but more than 10% in the amorphous SiC, decreasing greatly with increasing deposition temperature. No hydride bonds are detected by Fourier transform infrared spectroscopy measurements. The chemical order of the deposited SiC films improves with increasing deposition temperature.     

Capacitance-voltage characteristics of In0.3Ge2Sb2Te5 thin films

The influence of indium doping on the capacitance variation with temperature and applied bias voltage of Ge₂Sb₂Te₅ is investigated. The capacitance-voltage (C-V) measurements of In_0.3Ge₂Sb₂Te₅ and Ge₂Sb₂Te₅ thin films were performed for a sweep of voltages from −20 to +20 V at different temperatures. The results show different capacitance behavior of In_0.3Ge₂Sb₂Te₅ and Ge₂Sb₂Te₅ films. As the temperature increases the capacitance of the indium-doped sample decreases and becomes negative. The negative capacitance effect might be attributed to a significant increase of the film’s conductivity due to temperature and applied bias voltage. The nonlinearity in the capacitance and conductivity could be related to the nucleation mechanism as the temperature becomes close to the amorphous-crystalline transition temperature.     

Anomalous amorphous SiO2 films

Anomalous SiO₂ films have been prepared by sputtering Si in a mixture of Ar-10% O₂ at 77 K. The same sputtering conditions at room temperature yield normal SiO₂ which means that the anomaly is produced by the low temperature deposition. The anomaly reveals itself in several physical properties. The density of the anomalous SiO₂ is 1.72 as compared with 2.20 for bulk and the dielectric constant is about 50% larger than bulk and with a much stronger temperature dependence. The infrared (ir) spectrum of the anomalous SiO₂ is only slightly different from bulk SiO₂ but esr experiments reveal about 3 × 10¹⁸ spins cm which do not exist in bulk SiO₂. These anomalous films are extremely stable: upon heating only a small amount of oxygen (1 part in 10⁵) evolves at 440°C but the density and IR spectrum remain unchanged up to 1300°C. Annealing at 1500°C completely removes the ESR signal and returns the ir spectrum and the density to that of cristobalite. An electron diffraction and transmission electron microscopy study reveals that the anomalous SiO₂ films consist of essentially bulk like SiO₂ clusters about 250 Å in diameter separated by a low density network. The low density network undoubtedly contains unbound O atoms and the SiSi bonds which give rise to the esr signal. The structural model can account for all the anomalous properties.     

The specific heat capacities of V2O5/P2O5-based glasses

The specific heat capacities of a series of V₂O₅/P₂O₅-based glasses have been measured in the approximate temperature range 3–300 K. The proportions of the host constituents were varied and the effects produced by adding oxides of copper, titanium and sodium were examined. The measurements were extended to investigate the influence of fast neutron irradiation upon the specific heat capacity of pure, initially crystalline V₂O₅.The observations are consistent with a spectrum of background vibrations, the form of which is temperature dependent. At intermediate temperatures the vibrations were consistent with the glasses displaying predominantly chain-like characteristics. With reduction to lower temperatures the vibrational behaviour increasingly resembled that of solids displaying three-dimensional characteristics. The temperature dependence of the specific heat capacity at the lowest temperatures was consistent with the presence of a narrow band of low-frequency modes centred upon 1.67 × 10¹¹ s^?1, the density of which increased with phosphorus content. From observations of the density of these modes in the doped specimens, it was concluded that the role of copper wass largely that of a network former, whereas titanium and sodium were essentially network modifiers.     

Crystallization of amorphous selenium and As0.005Se0.995

The effect of temperature on the crystallization kinetics of bulk amorphous selenium and the alloy As_0.005Se_0.995 has been studied using differential scanning calorimetry. A time-temperature-transformation (TTT) curve has been plotted from isothermal results over the temperature range 320 to 490 K, and shows the presence of two minima for both materials. Using the empirical Avrami expression for solid-state transformations, a number of kinetic parameters has been determined.     

Structural changes during the crystallization of the Bi4Ge3O12 glasses

Bismuth-germanate glass ceramics with the composition 40% Bi₂O₃-60% GeO₂ (in molar percents) were prepared through controlled crystallization of melt-quenched glass. The Raman and FTIR spectra recorded in the as-made glasses show broad bands at 240, 400, 780 cm^− 1 and 400, 745 cm^− 1 have been assigned Ge-O bonds which appear right after preparation. X-ray diffraction has shown that the as-made glasses are amorphous, but after annealing above the crystallization temperature at 558 °C, BGO nano-crystallites with a size of about 50 nm precipitate in the glass matrix. The Raman and FTIR spectra reveal sharp peaks associated to the “internal” and “external vibrations” of GeO₄ tetrahedral groups inside the BGO nano-crystallites. In the glass ceramic sample the transparency region is shifted at longer wavelengths compared to as-made glass, due to the Rayleigh scattering on the BGO nano-crystallites.     

A comparison between the Raman modes of the tetrahedral network in amorphous and layered crystalline GeSe2

The characteristic A₁ peak at 199 cm⁻¹ in the Raman spectrum of amorphous GeSe₂ were compared with the peaks at 211 and 216 cm⁻¹ in the spectrum of crystalline GeSe₂. It was proved that the crystalline 216 cm⁻¹ peak is an intrinsic mode which is enhanced by the bulk exciton transition. From a model calculation using a valence force field and bond polarizability, the 211 cm⁻¹ peak was assigned to in-phase breathing vibrations extended along the GeSe₄ tetrahedral chain structure, while the 216 cm⁻¹ peak was attributed to in-phase breathing vibrations quasi-localized at the GeSe₄ edge-sharing tetrahedra. The phonon density of states in the crystal has a doublet peak similar to the amorphous Raman spectrum. A correspondence between the amorphous and the crystalline Raman spectra was proposed.