F掺杂SnO2电子结构的模拟计算

采用基于密度泛函理论的平面波赝势方法对SnO₂:F体系的电子结构进行了第一性原理模拟计算.用广义梯度近似方法优化SnO₂:F体系的晶胞结构，计算了体系基态总能.通过确定F掺杂对O的优先替代位置，计算了SnO₂:F的能带结构、态密度、分波态密度.分析了F掺杂对SnO₂晶体的电子结构和晶体性质及光学吸收边的影响，从理论上得出光学吸收边发生蓝移.对不同掺杂量的体系电子结构进行了分析. 关键词： F掺杂 2')" href="#">SnO₂ 电子结构 态密度     

The soft mode properties in Raman spectra of improper ferroelastics Hg2Cl2 and Hg2Br2

The temperature dependence of the frequency and intensity of the soft mode line appearing in the Raman spectra of Hg₂Cl₂, Hg₂Br₂ below the critical point T_c was studied. A proportionality between the scattering cross section of the soft mode and the square of its frequency v_sm was established. A strong stress-induced increase of the intensity and frequency of the soft mode line was observed near T_c, the relative shift of v_sm being ～30% at ～0.5 kg/mm² stress and T_c?T=5°K.     

The electronic structure of CeO2 and PrO2

We have determined the electronic structure of CeO₂ and PrO₂ by performing SCF band calculations. We find that in both systems there are metal f- and d- electrons in the oxygen 2p bands. We discuss the question of valency and ionicity in these systems.     

第一性原理研究Fe掺杂SnO2材料的光电性质

采用基于第一性原理的线性缀加平面波(FP-LAPW)方法,研究Fe掺杂SnO₂材料电子结构和光学性质,包括电子态密度、能带结构、介电函数和其他一些光学图谱. 研究结果表明,掺Fe后材料均属于直接跃迁半导体,且呈现半金属性;随掺杂浓度增加,费米能级进入价带,带隙逐渐减小,Fe原子之间耦合作用增强;通过掺杂能够在一定程度上改变成键性质,使其具有金属键性质. 光学谱线(吸收谱、消光系数等)与介电函数虚部谱线相对应,均发生蓝移,各峰值与电子跃迁吸收有关,从理论上指出光学性质和电子结构的内在联系. 关键词： 能带结构 态密度 光学性质 介电函数     

Brillouin scattering in Hg2Cl2

Hg₂Cl₂ undergoes a second order phase transition around 185 K. All the elastic constants have been measured above (tetragonal phase) and below (orthorhombic phase) the transition point. The results support the hypothesis that the transition is induced by the condensation of a transversal acoustical mode at an X point of the first Brillouin zone in the tetragonal phase. The coefficients of the coupling terms in the free energy are evaluated and the relative values of the spontaneous deformations are evaluated.     

Cluster calculation of electronic structure and hyperfine interactions for α-Fe2O3

The MSX_α cluster technique has been used to study the electronic structure of hematite α-Fe₂O₃, where iron is formally in a 3d₅⁶S state. The calculated energy levels are compared with X-ray emission and photoelectron spectra. The wave functions have been used to compute the charge distribution, as well as hyperfine parameters such as quadrupole coupling constant, isomer shift and magnetic hyperfine field. The results indicate a considerable influence of chemical bonding on these parameters due to charge transfer and covalency. From the calculated field gradient and the measured quadrupole coupling constant a nuclear quadrupole moment for ^57mTe of about 0.11b is deduced. This value is smaller than the most recent estimates of 0.15b based on the ionic model but not as small as the value of 0.082b obtained from first principles calculations on iron dihalides.     

Experimental and theoretical investigations into the electronic structure of CF2Br2 by electron momentum spectroscopy

The binding energy spectra and electron momentum density distributions for the valence orbitals of CF₂Br₂ have been obtained by using electron momentum spectroscopy (EMS) at an impact energy of 1200 eV plus binding energy. The measured electron momentum profiles are compared with Hartree–Fock (HF) and density functional theory (DFT) calculations with different-sized basis sets. In general, the DFT-B3LYP calculation using the large basis sets of 6-311++G** and aug-cc-pVTZ fairly describe the experimental results. Moreover, the controversial orderings of the outer valence orbitals have been reassigned. The pole strength of the main ionization transition from the inner valence orbital of 1b₂ is determined.     

Light scattering study of ferroelastics Hg2Br2

Brillouin and Raman scattering spectra of the soft modes in Hg₂Br₂ have been measured using triple pass Fabry-Perot interferometers. The temperature dependence of the coupled soft optical and acoustic modes are analyzed by use of the thermodynamic potential and the equations of motion for the coupled oscillators. These two methods have given the same result for explaining the elastic anomaly of Hg₂Br₂ crystals below the transition temperature.     

Full-relativistic calculation of electronic structure of Zr2AlC and Zr2AlN

We have employed a full-relativistic version of an all-electron full-potential linearized-augmented plane-wave method in the local density approximation to investigate the electronic structure of nanolaminate Zr₂AlX (X=C and N). The Zr 4d electrons are treated as valence electrons. We have investigated the lattice parameters, bulk moduli, band structures, total and partial densities of states and charge densities. It is demonstrated that the strength and electrical transport properties in these materials are principally governed by the metallic planes.     

The electronic structure and properties of the C15 compounds CeAl2, LaAl2 and YAl2

Results of self-consistent band calculations are reported for the C15 structured XAl₂ materials (X = Y, La, and Ce) using the local spin density functional formalism for assumed ferromagnetic and antiferromagnetic states as well as the paramagnetic state. The X-atoms are found to be the dominant factor is determining the electronic structure near the Fermi energy and this is enhanced by the presence of f-bands close to (LaAl₂) or at (CeAl₂) the Fermi energy. In paramagnetic CeAl₂, the f-bands are about 1 eV wide and, although principally above the Fermi energy, extend down to accomodate the additional electron compared to LaAl₂. The ferromagnetic state is found not to be stable. By contrast, the antiferromagnetic state is found to be stable with a magnetic moment of 0.88μ_B per Ce atom in very good agreement with the maximum moment, 0.89μ_B found in the neutron measurements of Barbara et al. A significant narrowing of the f-bandwidth is observed in the antiferromagnetic state. The antiferromagnetic spin density ordering appears to be related to nesting features in this underlying Fermi surface in LaAl₂ (i.e., no 4f electron) rather than that of CeAl₂.     

Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2

Undoped and p- and n-doped AgSbX₂ (X=Se and Te) materials were synthesized by direct fusion technique. The structural properties were investigated by X-ray diffraction and SEM microscopy. The electrical conductivity, thermal conductivity and Seebeck coefficient have been measured as a function of temperature in the range from 300 to 600 K.To enlighten electron transport behaviours observed in AgSbSe₂ and AgSbTe₂ compounds, electronic structure calculations have been performed by the Korringa-Kohn-Rostoker method as well as KKR with coherent potential approximation (KKR-CPA) for ordered (hypothetical AgX and SbX as well as AgSbX₂ approximates) and disordered systems (Ag_1−xSb_xX), respectively. The calculated density of states in the considered structural cases shows apparent tendencies to opening the energy gap near the Fermi level for the stoichiometric AgSbX₂ compositions, but a small overlap between valence and conduction bands is still present. Such electronic structure behaviour well agrees with the semimetallic properties of the analyzed samples.     

Electronic structure calculation of V2+O2 complexes in silicon

The self-consistent field multiple-scattering Xα molecular cluster model is applied to calculate the electronic states of a divacancy plus two oxygen complex in silicon. The calculations were carried out for the undistorted configuration of the defect. The obtained results, which are in fairly good agreement with EPR measurements, confirm the main features of the accepted microscopic model for the Si - P2 center.     

Theoretical determination of the K2 electronic structure

A theoretical study of the electronic structure of K₂⁺ is presented. Potential energy curves for the ground and various electronic excited states have been computed in the framework of a model potential method over a wide range of internuclear distances. Spectroscopic constants for the lowest short-range bound states have been determined and they are compared with available experimental and theoretical values. Long-range structures (wells and humps) have been also predicted, some of which being described from a long-range model.     

New interpretation of the electronic structure of SiO2

The SiO₂ electronic density of states has been calculated within the Bethe lattice approximation using a simplified tight-binding hamiltonian. All of the experimentally found features, except a peak in the Si L_{2, 3} spectrum, are reproduced in our calculation when only unlike-atom bonds are present in the structure of the oxide. We have found that a possible origin of the peak in the Si L_{2, 3} spectrum is the presence of clusters of elemental Si in the oxide.     

Heat capacity and magnetic properties of pyrochlore Hg2Os2O7

Hg₂Os₂O₇, which has the cubic pyrochlore structure, remains metallic down to the liquid helium temperature unlike its isostructural counterpart Cd₂Os₂O₇, which shows metal-insulator transition at 226 K. Magnetization and heat capacity data for Hg₂Os₂O₇ are presented. The magnetic anomaly at T_N=88 K shares many characteristics in common with the metal-insulator transition in Cd₂Os₂O₇, though Hg₂Os₂O₇ remains metallic below T_N. The heat capacity C_p shows no or very little change in the magnetic entropy around T_N, supporting the view that there is no long-range ordering of localized spins. The measured value of electronic heat-capacity coefficient γ=21 mJ K⁻²mol⁻¹ is comparable to the value obtained from band-structure calculation on Cd₂Os₂O₇, suggesting that mass-enhancement is small in Hg₂Os₂O₇. There is a pronounced peak in C_p/T³ at 13.1 K, which corresponds to a peak in the phonon density of states at 40 cm⁻¹.     

First-principles calculation of structural and electronic properties of pyrochlore Lu2Sn2O7

A Density functional theory method within generalized gradient approximation has been performed to obtain the static lattice parameters, oxygen positional parameter, bond length and bond angle and electronic properties of ideal Lu₂Sn₂O₇ pyrochlore. The results are in excellent agreement with available experimental measurements. Density of states (DOS) of this compound was presented and analysed. We also notice the presence of the hybridization between oxygen and Lu metal. The band structure calculations show that the compound has direct band gap of 2.67 eV at the Γ point in the Brillouin zone and this indicates that the material has a semi-conducting feature.     

A first-principles calculation on the electronic properties of Si/N-codoped TiO2

To deeply understand the effects of Si/N-codoping on the electronic structures of TiO₂ and confirm their photocatalytic performance, a comparison theoretical study of their energetic and electronic properties was carried out involving single N-doping, single Si-doping and three models of Si/N-codoping based on first-principles. As for N-doped TiO₂, an isolated N 2p state locates above the top of valence band and mixes with O 2p states, resulting in band gap narrowing. However, the unoccupied N 2p state acts as electrons traps to promote the electron-hole recombination. Using Si-doping, the band gap has a decrease of 0.24 eV and the valence band broadens about 0.30 eV. These two factors cause a better performance of photocatalyst. The special Si/N-codoped TiO₂ model with one O atom replaced by a N atom and its adjacent Ti atom replaced by a Si atom, has the smallest defect formation energy in three codoping models, suggesting the model is the most energetic favorable. The calculated energy results also indicate that the Si incorporation increases the N concentration in Si/N-codoped TiO₂. This model obtains the most narrowed band gap of 1.63 eV in comparison with the other two models. The dopant states hybridize with O 2p states, leading to the valence band broadening and then improving the mobility of photo-generated hole; the N 2p states are occupied simultaneously. The significantly narrowed band gap and the absence of recombination center can give a reasonable explanation for the high photocatalytic activity under visible light.     

Study of the electronic structure and spectral features of TiS2,ZrS2 and HfS2 by the Xα discrete variational method

In order to study the electronic structure of TiS₂, ZrS₂ and HfS₂, selfconsistent charge X_α discrete variational calculations of clusters MeS₆^8- (Me = Ti, Zr, Hf) have been performed. The results obtained are consistent with band structure calculations. The covalency of the chemical bonding is shown to increase in the series TiS₂-ZrS₂-HfS₂, which corresponds to the atomization energy in the series. The results are applied in the interpretation of X-ray emission, photoelectron and optical spectra.     

A solid state approach to the electronic structure of molecules: Self-consistent pseudopotential calculation of O2

A first principles non-local pseudopotential method is used to solve the SCF equation for a molecule in the density functional approach. A superlattice technique is applied which allows an expansion of the molecular wavefunction in terms of a mixed basis set consisting of plane waves and localized orbitals. The efficiency of the method is demonstrated for the O₂ molecule.     

Controlling the electronic structure of SnO2 nanowires by Mo-doping

Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580 nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.