Ultra‐low loss waveguide platform and its integration with silicon photonics

Planar waveguides with ultra‐low optical propagation loss enable a plethora of passive photonic integrated circuits, such as splitters and combiners, filters, delay lines, and components for advanced modulation formats. An overview is presented of the status of the field of ultra‐low loss waveguides and circuits, including the design, the trade‐off between bend radius and loss, and fabrication rationale. The characterization methods to accurately measure such waveguides are discussed. Some typical examples of device and circuit applications are presented. An even wider range of applications becomes possible with the integration of active devices, such as lasers, amplifiers, modulators and photodetectors, on such an ultra‐low loss waveguide platform. A summary of efforts to integrate silicon nitride and silica‐based low‐loss waveguides with silicon and III/V based photonics, either hybridly or heterogeneously, will be presented. The approach to combine these integration technologies heterogeneously on a single silicon substrate is discussed and an application example of a high‐bandwidth receiver is shown.     

Hybrid silicon evanescent approach to optical interconnects

We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III–V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, Mach–Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III–V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are 1520, 1440 and 1480 nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally and theoretically. An overall characteristic temperature (T ₀) of 51°C, an above threshold characteristic temperature (T ₁) of 100°C, and a thermal impedance (Z _T ) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry–Perot devices. Scaling this platform to larger dimensions is demonstrated up to 150 mm wafer diameter. A vertical outgassing channel design is developed to accomplish high-quality III–V epitaxial transfer to silicon in a timely and dimension-independent fashion.     

Novel Light Source Integration Approaches for Silicon Photonics

Silicon does not emit light efficiently, therefore the integration of other light‐emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III‐V‐to‐silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide‐coupled on‐chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra‐dense comb lasers, short (850nm) and long (2.3μm) wavelength lasers, wide‐band LEDs, monolithic O‐band lasers and micro‐disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed.     

Stability of Optically Injected Two‐State Quantum‐Dot Lasers

Simultaneous two‐state lasing is a unique property of semiconductor quantum‐dot (QD) lasers. This not only changes steady‐state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single‐state laser devices, we find a strong suppression of dynamical instabilities in two‐state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all‐optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required.     

Si quantum dot structures and their applications

This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented.The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.     

Advances in photonic crystals with MEMS and with semiconductor quantum dots

We discuss photonic crystals (PCs) with a microelectromechanical system (MEMS) and semiconductor quantum dots (QDs) as novel classes of PC devices. Integration of MEMS structures into PC devices enables one to realize several kinds of functional devices, such as modulators, switches, and tunable filters for highly integrated photonic circuits. We describe the basic concept of MEMS-integrated PC devices and show numerical and experimental demonstrations of MEMS-integrated functional PC devices. On the other hand, QDs are promising candidates for active media in PC devices. Spontaneous emission control of QD emission in PC nanocavities is especially important for novel optoelectronic devices and quantum information devices. In PC nanocavities, the interaction between QD excitons and photons is enhanced dramatically. The control of spontaneous emission spectrum and the enhancement of the luminescence intensity of InAs QDs by PC nanocavities are demonstrated at telecommunication wavelengths. The Purcell effect for ensemble and single QDs in PC nanocavities are also discussed.     

Low-loss germanium strip waveguides on silicon for the mid-infrared

Mid-infrared photonics in silicon needs low-loss integrated waveguides. While monocrystalline germanium waveguides on silicon have been proposed, experimental realization has not been reported. Here we demonstrate a germanium strip waveguide on a silicon substrate. It is designed for single mode transmission of light in transverse magnetic (TM) polarization generated from quantum cascade lasers at a wavelength of 5.8 μm. The propagation losses were measured with the Fabry-Perot resonance method. The lowest achieved propagation loss is 2.5 dB/cm, while the bending loss is measured to be 0.12 dB for a 90° bend with a radius of 115 μm.     

石墨烯-硅基混合光子集成电路

近年来硅基光子学已经慢慢走向成熟,它被认为是未来取代电子集成电路,实现下一代更高性能的光子集成电路的关键技术.这得益于硅基光子器件与现代的互补金属氧化物半导体工艺相兼容,能够实现廉价的大规模集成.然而,由于受硅材料本身的光电特性所限,在硅基平台上实现高性能的有源器件仍然存在着巨大挑战.石墨烯-硅基混合光子集成电路的发展为解决这一问题提供了可行的方案.这得益于石墨烯作为一种兼具高载流子迁移率、高电光系数和宽带吸收等优点的二维光电材料,能够方便地与现有硅基器件相集成,并充分发挥自身的光电性能优势.本文结合我们课题组在该领域研究的一些最新成果,介绍了国际上在石墨烯-硅基混合光子集成电路上的一些重要研究进展,涵盖了光源、光波导、光调制器和光探测器四个重要组成部分.     

Comparison of cross-talk effects between colloidal quantum dot and conventional waveguides

We present cross-talk calculations for a subdiffraction nanophotonic waveguide that consists of a colloidal quantum dot (QD) array 10 nm in diameter and compare the results with conventional continuous dielectric waveguides, assuming the same 10 nm size as well as a 200 nm cutoff diameter for guided mode. We find that the QD cascade has much lower cross talk than 10 nm dielectric waveguides at an identical separation >30 nm. Moreover, results for 200 nm dielectric waveguides at a 280 nm gap are comparable with those of QD structures spaced 110 nm apart. Hence the proposed QD device is potentially superior to conventional waveguides in achieving lower cross talk in the subdiffraction regime and provides a new route to achieving high-density photonic integrated circuits.     

聚合物Y分支脊形波导的单模条件

有机聚合物光波导近年来成为研究的热点,它为实现下一代的光电集成回路提供了另外一种选择。它所具有的一系列优点如下:(1)与传统的材料相比,有机聚合物光波导容易在各种衬底上制作,其制作成本也得以降低,并且使得与有源器件如激光器、调制器、探测器的单片集成成为可能;(2)有机聚合物波导材料的折射率可以进行调整以满足耦合损耗和弯曲损耗的折中选择;(3)此外,有机聚合物的热光系数比SiO₂大一个数量级,而其导热系数却比SiO₂和Si小得多。有机聚合物Y分支是强度调制器和光开关等器件的重要组成。光波导器件在和单模光纤一起使用时要求其实现单模传输,这样可以减少耦合损耗。利用变分有效折射率法计算了聚合物Y分支脊形波导的光场分布。变分有效折射率法是变分法(VM)和有效折射率法(EIM)的结合,它结合了两种方法各自的优点,能够很精确地模拟光场分布情况。利用变分有效折射率法验证了满足单模传输的脊形波导结构参数:芯层厚度为1.5μm,脊高为0.2μm,脊宽为5μm。     

A review on quantum well structures in photonic devices for enhanced speed and span of the transmission network

Quantum well devices feature heterostructures of very thin epitaxial layers of group III-V and II-VI semiconductor materials. Quantum well devices are integrated monolithically with various optoelectronics devices to provide photonic integrated circuits. The representative structure could be realized with GaAs wells with GaAlAs barriers for wavelengths around 0.9 μm and InGaAsP are used for longer wavelengths. Together with quantum well, superlattice structure is another popular design for InGaAs Avalanche Photo Diode (APD). Quantum well structures find their applications in improved lasers, superlattice for photodiodes, modulators and switches. Consequences of quantum well theory are available today in terms of quantum wires and quantum dots. Upon the application of the normal electric field to quantum well structures, exciton pairs becomes more and more confined and the sharp exciton absorption peaks are observed. The effect is termed as “Quantum Confined Stark Effect”. The electro-absorption effect is approximately 50 times larger in multiple quantum well structures than it is in bulk semiconductors. Another electro-absorption effect known as “Franz Keldysh Effect” has been employed in monolithic waveguide detector. These effects lead to electro-absorption lasers (EAL) as well as electro-absorption laser modulators (EML).     

Low dimensional silicon structures for photonic and sensor applications

We review here our work on the photonic and sensor applications of nanostructured silicon. As we change the dimensionality of silicon very fascinating and new optical properties of the material appear. Light sources, modulators, waveguides, logical gates are a few examples of the various photonic devices which have been developed based on silicon nanocrystals. Needless to say, all these devices rely on quantum confinement and on the interplay between bulk and surface properties. Size effects and surface reconstructions are two critical issues which one has to master to employ silicon nanocrystals. Finally the use of silicon nanocrystals to develop innovative sensing mechanisms to reveal biomolecules or poisoning gasses will be discussed.     

硅基混合表面等离子体纳米光波导及集成器件

总结并展望了硅基混合表面等离子体纳米光波导及集成器件方面的理论和实验研究工作。首先介绍了几种硅基混合表面等离子体纳米光波导结构,其尺寸可小至100 nm以下,而传播长度达100μm量级;其次介绍了基于硅基混合表面等离子体纳米光波导的功分器、偏振分束器和谐振器等集成器件,其尺寸为亚微米量级;最后探讨了硅基混合表面等离子体纳米光波导与硅纳米线光波导的耦合及对其进行增益补偿。     

硅基光源的研究进展

随着人们对大容量、高速和低成本的信息传播的要求越来越迫切, 近年来硅基光电子学得以蓬勃发展, 但硅基光源一直没有得到真正的解决, 成为制约硅基光电子学发展的瓶颈. 硅的间接带隙本质给高效硅基光源的实现带来很大困难, 实用化的硅基激光是半导体科学家长期奋斗的目标. 本文分别介绍了硅基发光材料、硅基发光二极管和硅基激光的研究进展, 最后总结了目前各种硅基光源面临的问题和未来的发展方向.     

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 10¹¹ cm^-2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.     

Nonlinear effects in blue-shift waveguide EAM's

To exploit the vast bandwidth of optical communication systems for high bit-rate long-haul transmission, external modulators show a better system performance than directly modulated lasers. One of the main advantages of electroabsorption modulators (EAM's) compared with Mach–Zehnder modulators is the possibility to integrate the modulator with a laser having the same active layer. This reduces processing complexity and system costs. Usually the quantum confined Stark effect results in a red shift of the absorption, which leads to a small gain due to a detuned operation of the integrated laser. In contrast, blue shift structures have been proposed for these integrated devices as they show both good laser and modulator properties. These structures suffer from the drawback that saturation effects may occur for higher optical power as these devices absorb the optical power at low applied bias. The aim of this paper is to investigate the influence of nonlinear saturation effects like carrier accumulation, Burnstein–Moss-effect and carrier screening.     

Magneto-optical nonreciprocal phase shift in garnet/silicon-on-insulator waveguides

We demonstrate the integration of a single-crystal magneto-optical film onto thin silicon-on-insulator (SOI) waveguides by use of direct wafer bonding. Simulations show that the high confinement and asymmetric structure of SOI allows an enhancement of approximately 3x over the nonreciprocal phase shift achieved in previous designs; this value is confirmed by our measurements. Our structure will allow compact magneto-optical nonreciprocal devices, such as isolators, integrated on a silicon waveguiding platform.     

Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers

We have designed, grown and fabricated InAs/InP quantum dot (QD) waveguides as the gain materials of mode-locked lasers (MLLs). Passive InAs/InP QD MLLs based on single-section Fabry-Perot (F-P) cavities with repetition rates from 10 GHz to 100 GHz have been demonstrated in the C- and L-band. Femtosecond (fs) pulses with pulse duration of 295 fs have been achieved. The average output power is up to 50 mW at the room temperature of 18 °C. By using the external fiber mixed cavities fs pulse train with a repetition rate of 437 GHz has been generated. We have also discussed the working principles of the developed QD MLLs.     

Review of integrated optics

A tutorial introduction and a review are given of the field of integrated optics and optical guided-wave devices. Device principles and potential applications are discussed. The properties of dielectric waveguides are reviewed briefly and new materials and new fabrication techniques are mentioned. An illustration is given of recent work on devices. This includes a discussion of work on guided-wave modulators and switches with focus on devices made by titanium diffusion in lithium niobate. Mention is made of an experimental 4 × 4 switching network that was recently demonstrated in the laboratory. Other devices discussed are corrugated waveguide filters in which rejection bandwidths from 0.1 to 62% have been obtained. The paper concludes with a discussion of the use of guided-wave techniques in semiconductor junction lasers.     

硅基光电集成器件研究进展

随着器件结构与制作工艺的不断创新与完善，硅基发光器件已经可以实现室温下的有效工作，外量子效率可达到0．1％；低功耗的硅基高速调制器件的调制速率达到1GHz以上；而硅基光探测器对1300nm与1550nm波长的探测响应度也已分别达到了0．16mA／W和0．08mA／W．文章对硅基光电器件的研究进展情况进行了概述，并着重对几种器件的结构及工作原理进行了分析．