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异质结构的构筑与堆垛是新型二维材料物性调控及应用的有效策略.基于密度泛函理论的第一性原理计算,本文研究了4种不同堆叠构型的新型二维Janus Ga2SeTe/In2Se3范德瓦耳斯异质结的电子结构和光学性质. 4种异质结构型均为Ⅱ型能带结构的间接带隙半导体,光致电子的供体和受体材料由二维In2Se3的极化方向决定.光吸收度在可见光区域高达25%,有利于太阳可见光的有效利用.双轴应变可诱导直接-间接带隙转变,外加电场能有效调控异质结构带隙,使AA2叠加构型的带隙从0.195 eV单调增大到0.714 eV,AB2叠加构型的带隙从0.859 eV单调减小到0.058 eV,两种调控作用下异质结的能带始终保持Ⅱ型结构.压缩应变作用下的异质结在波长较短的可见光区域表现出更优异的光吸收能力.这些研究结果揭示了Janus Ga2SeTe/In2Se3范德瓦耳斯异质结电子结构的调控机理,为新型光电器件的设计提供理论指导. 相似文献
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Recent findings of two-dimensional(2D) ferroelectric(FE) materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE devices under the limit of atomic layer thickness. In this paper, we report the in-situ fabrication and probing of electronic structures of In2Se3–WSe2 lateral heterostructures, compared with most vertical FE heterostructures at present. Through mole... 相似文献
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采用金属有机化学气相沉积(MOCVD)工艺在p-GaAs(100)衬底上外延了Ga2O3薄膜并制备了n-Ga2O3/p-GaAs异质结日盲紫外探测器。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对Ga2O3薄膜表面形貌、晶体质量进行了测试与分析。结果表明,Ga2O3薄膜呈单一晶向,薄膜表面平整且为Volmer-Weber模式外延。测试表明,n-Ga2O3/p-GaAs异质结探测器具有明显的整流特性。器件在5 V反向偏压和紫外光(254 nm)照射下实现了超过3.0×104的光暗电流比、7.0 A/W的响应度、3412%的外量子效率、4.6×1013 Jones的探测率。我们利用TCAD软件对器件结构进行仿真,得到了器件内的电场分布和能带结构,并分析了器件的工作原理。该异质结探测器性能较好,制造工艺简单,为Ga 相似文献
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利用化学气相沉积法(CVD),气-液-固(VLS)生长法则在表面溅有金属Au催化剂层的1 cm×1 cm的Si片上制备三元Zn2GeO4纳米线。X射线衍射仪(XRD)测试结果表明,锌源与锗源质量比为8:1时可成功制备出Zn2GeO4纳米结构;扫描电子显微镜(SEM)测试结果表明,Zn2GeO4纳米线直径为100 nm,长度为10~11 μm;光致发光(PL)测试结果表明,Zn2GeO4纳米线在432和480 nm处具有两个发光峰,最后对其生长机理进行了分析。 相似文献
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研究了通过有机金属化学气相沉积技术及单源分子前躯体方法制备的Ni/Al2O3纳米复合材料的氢吸附(存储). 在冷壁的有机金属化学气相沉积反应器中,通过降解Ni(acac)2粉末基底上的[H2Al(OtBu)]2制备的Ni/Al2O3纳米复合材料. 通过X射线粉末衍射、扫描电镜、透射电镜以及能量色散型X射线荧光光谱等技术表征该复合材料. 采用自制Sievert's设备研究该复合材料的氢吸附(存储),可以储存约2.9%(重量比)的氢. 相似文献
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I. V. Bodnar 《Journal of Applied Spectroscopy》2010,77(5):654-657
Single crystals of In2Se3 and CuIn5Se8 compounds and (In2Se3)1–x·(CuIn5Se8)x solid solutions have been grown from the melt using the Bridgman method and their composition and structure determined. It
is shown that the crystals have n-type conductivity. Their transmission spectra were studied in the self-absorption edge region
at 80 and 295 K. Based on the spectral measurements, the band gap width (Eg) was determined and the band gap concentration dependences were plotted. It is found that Eg varies with the x composition nonlinearly. Using the dielectric model of Van Vechten–Bergstresser and the Hill–Richardson
pseudo potential model, Eg(x) was calculated theoretically. 相似文献
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钙钛矿半导体具有光吸收系数高、载流子扩散长度大和荧光量子效率高等优异物理特性,已在光电探测器、太阳能电池等领域展现出重要的应用潜力.但卤化铅钙钛矿的环境毒性和稳定性大大限制了该类器件的应用范围.因此,寻找低毒、稳定的非铅钙钛矿半导体尤为重要.利用锡元素替代铅元素并生长高质量的锡基钙钛矿薄膜是实现其光电器件应用的可行方案.本文采用脉冲激光沉积方法,在N型单晶硅(100)衬底上外延生长了一层(100)取向的CsSnBr3钙钛矿薄膜.霍尔效应及电学测试结果表明,基于CsSnBr3/Si半导体异质结在暗态下具有明显的异质PN结电流整流特征,在光照下具有显著的光响应行为,并具有可自驱动、高开关比(104)以及毫秒量级响应/恢复时间等优良光电探测器件性能.本文研究结果表明利用脉冲激光沉积方法在制备新型钙钛矿薄膜异质结、实现快速灵敏的光电探测方面具有重要应用前景. 相似文献
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Xueping Li Peize Yuan Lin Li Ting Liu Chenhai Shen Yurong Jiang Xiaohui Song Congxin Xia 《Frontiers of Physics》2023,18(1):13305
Constructing two-dimensional (2D) van der Waals heterostructures (vdWHs) can expand the electronic and optoelectronic applications of 2D semiconductors. However, the work on the 2D vdWHs with robust band alignment is still scarce. Here, we employ a global structure search approach to construct the vdWHs with monolayer MoSi2N4 and wide-bandgap GeO2. The studies show that the GeO2/MoSi2N4 vdWHs have the characteristics of direct structures with the band gap of 0.946 eV and type-II band alignment with GeO2 and MoSi2N4 layers as the conduction band minimum (CBM) and valence band maximum (VBM), respectively. Also, the direct-to-indirect band gap transition can be achieved by applying biaxial strain. In particular, the 2D GeO2/MoSi2N4 vdWHs show a robust type-II band alignment under the effects of biaxial strain, interlayer distance and external electric field. The results provide a route to realize the robust type-II band alignment vdWHs, which is helpful for the implementation of optoelectronic nanodevices with stable characteristics. 相似文献
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O. A. Balitskii V. P. Savchyn B. Jaeckel W. Jaegermann 《Physica E: Low-dimensional Systems and Nanostructures》2004,22(4):921-923
Surface properties of indium subselenide (In4Se3) were studied. It was confirmed, that the superstructure of this crystal is characterized by nanowire-like cylindrical clusters with diameter dimensions of about 20 nm and stairs along the a-axis up to 5 nm, depending on the cleavage conditions. 相似文献
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Rui Zheng 《Journal of Molecular Spectroscopy》2011,265(2):102-105
The rovibrational spectrum of the N2-N2O van der Waals complex has been recorded in the N2O ν1 region (∼1285 cm−1) using a tunable diode laser spectrometer to probe a pulsed supersonic slit jet. The observed transitions together with the data observed previously in the N2O ν3 region are analyzed using a Watson S-reduced asymmetric rotor Hamiltonian. The rotational and centrifugal distortion constants for the ground and excited vibrational states are accurately determined. The band-origin of the spectrum is determined to be 1285.73964(14) cm−1. A restricted two-dimensional intermolecular potential energy surface for a planar structure of N2-N2O has been calculated at the CCSD(T) level of theory with the aug-cc-pVDZ basis sets and a set of mid-bond functions. With the intermolecular distance fixed at the ground state value R = 3.6926 Å, the potential has a global minimum with a well depth of 326.64 cm−1 at θN2 = 11.0° and θN2O = 84.3° and has a saddle point with a barrier height of 204.61 cm−1 at θN2 = 97.4° and θN2O = 92.2°, where θN2(θN2O) is the enclosed angle between the N-N axis (N-N-O axis) and the intermolecular axis. 相似文献
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T.A. Melnychuk 《Applied Surface Science》2007,254(4):1002-1006
Trends of structural modifications and phase composition occurring in In4Se3 thin films and In4Se3-In4Te3 epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I0 = 10-50 kW/cm2, number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In4Se3-In4Te3, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In4Se3, In4Te3, widely used as infrared detectors and filters. 相似文献
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Desheng Zhu 《Journal of Molecular Spectroscopy》2009,253(2):88-830
The rovibrational spectrum of the He-N2O van der Waals complex has been recorded in the N2O-monomer ν1 region (∼1285 cm−1) using an infrared tunable diode laser spectrometer in conjunction with a free supersonic jet expansion and an astigmatic multi-pass absorption cell. Twenty-two lines are assigned to the ν2-band of He-N2O. Rotational constants for the ν2-excited state are derived. The band-origin of the spectrum is determined to be ν0 = 1285.0666(7) cm−1 and shows a blue-shift of 0.1633(8) cm−1 compared with the N2O ν1-band origin. 相似文献
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A slit nozzle continuous expansion of argon seeded with carbon dioxide is probed using a Bruker IFS 120 HR FTIR spectrometer operating at 0.05 cm−1 or 0.01 cm−1 spectral resolution. About 250 individual rovibrational transitions are assigned which belong to the asymmetric stretch of the CO2 moiety in Ar-CO2 and (CO2)2 complexes. This made it possible to refine the set of spectroscopic constants characterizing these van der Waals species. Analysis of the observed spectral features allowed for evaluation of the number densities of complexes formed in a jet. The manifold of rovibrational lines of van der Waals complexes (along with the monomer lines) sits on an unresolved pedestal, the shape of which varies dramatically as a function of reservoir pressure and initial CO2-Ar mixing ratios. Thorough examination of these variations allows for the observed features to be assigned to Arn(CO2)m clusters formed in CO2 seeded Ar expansion. 相似文献
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Y. Peña S. LugoM. Calixto-Rodriguez A. VázquezI. Gómez P. Elizondo 《Applied Surface Science》2011,257(6):2193-2196
In this work, we report the formation of CuInS2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In2S3) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10−8 to 3 Ω−1 cm−1 depending on the thickness of the CuS film. CIS films showed p-type conductivity. 相似文献
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In2O3 is introduced into TiO2 by sol-gel method to improve the response/recovery rate and expand the operating temperature, when the In2O3-TiO2 mixed system is exposed to H2/O2. The sensor is fabricated by thick film technology. Influence of In2O3 on the film phase composition, microstructure and sensing characteristics is discussed. Dynamic response properties show that the operating temperature of the mixed system is at 500-800 °C, which is about 600-800 °C for pure TiO2. Response time of the sensor is about 200-260 ms (millisecond) while recovery time is in a narrow range of 60-280 ms at 600-800 °C. The promoting mechanism is suggested to arise from the introduction of In2O3 and grain size effect of the sensing film. Then In2O3-TiO2 thick films are surface-modified by Pt using chloroplatinic acid. The promoting effect of Pt dispersed on the mixed system is also investigated. 相似文献
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Yoshio Tatamitani 《Journal of Molecular Spectroscopy》2003,222(1):102-108
The results of molecular beam Fourier transform microwave (FTMW) investigations of the van der Waals complexes of dimethyl ether with 1,1-difluoroethene/trifluoroethene are reported. The rotational parameters of the complexes have been interpreted in terms of a Cs geometry with the two methyl groups lying out of the σv symmetry plane of complexes. The complexes are bound with three hydrogen bonds of which one is the stronger O?HC type and two are the weaker F?HC types. Some additional information on the structure and the hydrogen bond has been obtained from ab initio calculations. 相似文献