High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well(QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well(MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence(PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In0.485GaAs0.184Sb/Al0.3Ga0.45In0.25As0.22Sb0.78MQW with 1.72% compressive strain grown at 460 C posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.     

Low driving voltage in an organic light-emitting diode using MoO3/NPB multiple quantum well structure in a hole transport layer

The driving voltage of an organic light-emitting diode(OLED) is lowered by employing molybdenum trioxide(MoO3)/N,N’-bis(naphthalene-1-yl)-N,N’-bis(phe-nyl)-benzidine(NPB) multiple quantum well(MQW) structure in the hole transport layer.For the device with double quantum well(DQW) structure of ITO/[MoO3(2.5 nm)/NPB(20 nm)]2/Alq3(50 nm)/LiF(0.8 nm)/Al(120 nm)],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device(without MQW structures),and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.     

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.     

High quality above 3-μm mid-infrared InGaAsSb/AIGaInAsSb multiple-quantum well grown by molecular beam epitaxy

The GaSb-based laser shows its superiority in the 3-4 ~tm wavelength range. However, for a quantum well （QW） laser structure of InGaAsSb/AIGaInAsSb multiple-quantum well （MQW） grown on GaSb, uniform content and high com- pressive strain in InGaAsSb/A1GaInAsSb are not easy to control. In this paper, the influences of the growth tempera- ture and compressive strain on the photoluminescence （PL） property of a 3.0μm lnGaAsSb/A1GaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the Ino.485GaAso.184Sb/Alo.3Gao.45Ino.25Aso.22Sbo.78 MQW with 1.72% compressive strain grown at 460 ~C posseses the op- timum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.     

Light propagation characteristics in quantum well structures of photonic crystals

Two-dimensional （2D） closed-cavity single quantum well （SQW） and multiple quantum well （MQW） structures are proposed based on the traditional 2D open-cavity SQW structures of photonic crystals. The numerical calculation results show that the proposed structures can greatly improve the optical characteristics compared with the traditional structures. It is found that the barrier thickness has a great impact on the optical characteristics of the closed-cavity MQW structures： when the barrier thickness is narrower, each resonant peak which appears in the SQW would split, the number of split times is just equal to the number of wells, and each well in the MQW structures is a travelling-wave-well, similar to the well in the open-cavity SQW structures; when the barrier thickness is wider, there is no effect of spectral splitting, and each well in the MQW structures is a standing-wave-well, just like the well in the closed-cavity SQW. The physical origin of different field distributions and the effect of the spectral splitting are provided.     

Control of stochastic resonance in bistable system by using periodic signal

<正>According to the characteristic structure of double wells in bistable systems,this paper analyses stochastic fluctuations in the single potential well and probability transitions between the two potential wells and proposes a method of controlling stochastic resonance by using a periodic signal.Results of theoretical analysis and numerical simulation show that the phenomenon of stochastic resonance happens when the time scales of the periodic signal and the noise-induced probability transitions between the two potential wells achieve stochastic synchronization.By adding a bistable system with a controllable periodic signal,fluctuations in the single potential well can be effectively controlled,thus affecting the probability transitions between the two potential wells.In this way,an effective control can be achieved which allows one to either enhance or realize stochastic resonance.     

Optical Stark deceleration of neutral molecules from supersonic expansion with a rotating laser beam

Cold molecules have great scientific significance in high-resolution spectroscopy, precision measurement of physical constants, cold collision, and cold chemistry. Supersonic expansion is a conventional and versatile method to produce cold molecules with high kinetic energies. We theoretically show here that fast-moving molecules from supersonic expansion can be effectively decelerated to any desired velocity with a rotating laser beam. The orbiting focus spot of the red-detuned laser serves as a two-dimensional potential well for the molecules. We analyze the dynamics of the molecules inside the decelerating potential well and investigate the dependence of their phase acceptance by the potential well on the tilting angle of the laser beam. ND_3 molecules are used in the test of the scheme and their trajectories under the impact of the decelerating potential well are numerically simulated using the Monte Carlo method. For instance, with a laser beam of20 k W in power focused into a pot of 40 μm in waist radius, ND_3 molecules of 250 m/s can be brought to a standstill by the decelerating potential well within a time interval of about 0.73 ms. The total angle covered by the rotating laser beam is about 5.24?with the distance travelled by the potential well being about 9.13 cm. In fact, the molecules can be decelerated to any desired velocity depending on the parameters adopted. This scheme is simple in structure and easy to be realized in experiment. In addition, it is applicable to decelerating both molecules and atoms.     

A novel two-dimensional SiO sheet with high-stability,strain tunable electronic structure,and excellent mechanical properties

Using the structure search of particle swarm optimization(PSO) algorithm combined with density functional theory(DFT), we conduct a systematic two-dimensional(2D) material research on the SiO and discover a P2 monolayer structure.The phonon spectrum shows that the 2D P2 is dynamic-stable under ambient pressure. Molecular dynamics simulations show that 2D P2 can still exist stably at a high temperature of 1000 K, indicating that 2D P2 has application potential in high-temperature environments. The intrinsic 2D P2 structure has a quasi-direct band gap of 3.2 e V. The 2D P2 structure can be transformed into a direct band gap semiconductor by appropriate strain, and the band gap can be adjusted to the ideal band gap of 1.2 e V–1.6 e V for photovoltaic materials. These unique properties of the 2D P2 structure make it expected to have potential applications in nanomechanics and nanoelectronics.     

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Four blue-violet light emitting InGaN/GaN multiple quantum well(MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.     

Enhanced spontaneous emission factor for microcavity lasers

The microcavity and the influence of nonradiative recombination can control spontaneous emission.An analytic resolution of rate equation is studied for microcavity lasers.The relationship between output prop- erties and structural parameters of multi-quantum wells(MQWs)is obtained.One of the most important consequences of the increased spontaneous emission factor is the reduction of laser threshold.It is found that the characteristic curve of a"thresholdless"laser is strongly nonradiative depopulation-dependent. The light output is increased by the enhanced well number and the reduced width.In particular,there is an optimal well number corresponding to the lowest threshold current density for MQW structure in the microcavity lasers.     

Observation of the current－voltage plateau-like structure of resonant tunnelling diode with prewells under different magnetic fields

We have grown resonant tunnelling diodes (RTDs) with different sized emitter prewells and without a prewell. The current－voltage (I－V) characteristics of them in different magnetic fields were investigated. Two important phenomena were observed. First, a high magnetic field can destroy the plateau-like structure in the I－V curves of the RTD. This phenomenon is ascribed to the fact that the high magnetic field will demolish the coupling between the energy level in the main quantum well and that in the emitter quantum well or in the prewell. Secondly, the existence and size of the prewell are also important factors influencing the plateau-like structure.     

Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers

GaN-based multiple quantum well light-emitting diodes （LEDs） with conventional and superlattice barriers have been investigated numerically. Simulation results demonstrate using InGaN/GaN superlattices as barriers can effectively enhance performances of the GaN-Based LEDs, mainly owing to the improvement of hole injection and transport among the MQW active region. Meanwhile, the improved electron capture decreases the electron leakage and alleviates the efficiency droop. The weak polarization field induced by the superlattice structure strengthens the intensity of the emission spectrum and leads to a blue-shift relative to the conventional one.     

Manipulation of extraordinary acoustic transmission by a tunable bull’s eye structure

Extraordinary acoustic transmission （EAT） has been investigated in a tunable bull＇s eye structure. We demonstrate that the transmission coefficient of acoustic waves can be modulated by a grating structure. When the grating is located at a distance of 0.5 mm from the base plate, the acoustic transmission shows an 8.77-fold enhancement compared to that by using a traditional bull＇s eye structure. When the distance increases to 1.5 mm, the transmission approaches zero, indicating a total reflection. Thus, we can make an efficient modulation of acoustic transmission from 0 to 877%. The EAT effects have been ascribed to the coupling of structure-induced resonance with the diffractive wave and the waveguide modes, as well as the Fabry-Perot resonances. As a potential application, the modulation of far-field collimation is illustrated in the proposed bull＇s eye structure.     

Microtrap on a concave grating reflector for atom trapping

We propose a novel scheme of optical confinement for atoms by using a concave grating reflector.The two-dimension grating structure with a concave surface shape exhibits strong focusing ability under radially polarized illumination.Especially,the light intensity at the focal point is about 100 times higher than that of the incident light.Such a focusing optical field reflected from the curved grating structure can provide a deep potential to trap cold atoms.We discuss the feasibility of the structure serving as an optical dipole trap.Our results are as follows.(i) Van der Waals attraction potential to the surface of the structure has a low effect on trapped atoms,(ⅱ) The maximum trapping potential is ~1.14 mK in the optical trap,which is high enough to trap cold ~(87)Rb atoms from a standard magneto-optical trap with a temperature of 120 μK,and the maximum photon scattering rate is lower than 1/s.(ⅲ) Such a microtrap array can also manipulate and control cold molecules,or microscopic particles.     

Analysis and Simulation of Quantum Radar Cross Section

We derive a modified analytical expression of a quantum radar cross section （QRCS）. Subsequently, we present a comparison between the QRCS and a classical radar cross section （RCS） and analyze the factors that can affect the intensity of the peak and side lobes. Simulation results on a flat rectangular plate demonstrate that QRCS has a similar structure to that of RCS. The analysis of side-lobe structure can benefit the design of quantum stealth platforms as well as the research on quantum radars.     

Novel Woods-Saxon stochastic resonance system for weak signal detection

We propose a joint exponential function and Woods–Saxon stochastic resonance(EWSSR)model.Because change of a single parameter in the classical stochastic resonance model may cause a great change in the shape of the potential function,it is difficult to obtain the optimal output signal-to-noise ratio by adjusting one parameter.In the novel system,the influence of different parameters on the shape of the potential function has its own emphasis,making it easier for us to adjust the shape of the potential function.The system can obtain different widths of the potential well or barrier height by adjusting one of these parameters,so that the system can match different types of input signals adaptively.By adjusting the system parameters,the potential function model can be transformed between the bistable model and the monostable model.The potential function of EWSSR has richer shapes and geometric characteristics.The effects of parameters,such as the height of the barrier and the width of the potential well,on SNR are studied,and a set of relatively optimal parameters are determined.Moreover,the EWSSR model is compared with other classical stochastic resonance models.Numerical experiments show that the proposed EWSSR model has higher SNR and better noise immunity than other classical stochastic resonance models.Simultaneously,the EWSSR model is applied to the detection of actual bearing fault signals,and the detection effect is also superior to other models.     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.     

Giant Goos–Hnchen shifts of waveguide coupled long-range surface plasmon resonance mode

A hybrid structure based on a planar waveguide(PWG) mode coupling a long-range surface plasmon resonance(LRSPR) mode is proposed to enhance the GH shift. Both the PWG mode and LRSPR mode can be in strong resonance, and these two modes can be coupled together due to the normal-mode splitting. The largest GH shift of PWG-coupled LRSPR structure is 4156 times that of the incident beam, which is 23 times and 3.6 times that of the surface plasmon resonance(SPR) structure and the LRSPR structure, respectively. As a GH shift sensor, the highest sensitivity of 4.68 × 10~7λ is realized in the coupled structure. Compared with the sensitivity of the traditional SPR structure, the sensitivity of our structure is increased by more than 2 orders, which theoretically indicates that the proposed configuration can be applied to the field of high-sensitivity sensors in the future.     

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.     

High-Efficiency Phosphorescent White Organic Light-Emitting Diodes with Stable Emission Spectrum Based on RGB Separately Monochromatic Emission Layers

Highly efficient phosphorescent white organic light-emitting diodes （WOLEDs） with stable emission spectra are successfully fabricated by using an RGB three-color separately monochromatic emission layer （EML） struc- ture. The EML consists of a sequence of bis（2-methyldibenzo[f, h]quinoxaline） （acetylacetonate） iridium （Ⅲ） （Ir（MDQ）2（acac）） doped tris（4-carbazoyl-9-ylphenyl）amine （TCTA） as the red emission layer, iridium, tris（2- phenylpyidine）（Ir（ppy）3） doped TCTA as the green emission layer and iridium（Ill） Ibis（4, 6-difuorophenyl）- pyridinato-N, C2＇]picolinate （FIrpic） doped a mixed-host of TCTA and tris（4-carbazoyl-9-ylphenyl）amine （26DCz PPy） as the blue emission layer. Without using any out-coupling techniques, the resulting WOLEDs achieve a power efficiency of 421m/W at lOO cd/m2, and 34 lm/W at 1000 cd/m2. The WOLEDs also show excellent spec- trum stability with bias voltages, remaining the Commission Internationale de L＇Eclairage coordinates at （0.44, 0.43） from 1000 cd/m2 to 10000 cd/m2 and the color rendering index is as high as over 80. We contribute the sta- ble emission spectrum to the RGB separate EML structure that successfully suppresses the undesired competition between host-guest energy transfer and direct exciton formation on emissive dopants by effectively controlling the position of exciton recombination region.