Effect of alkali-metal doping on photoluminescence of CdS films

It is established that doping of CdS polycrystalline films with alkaline metals (Li, Na, K, Cs) results in an increase of luminescence intensity by 3–5 times compared with pure films. This increase is accounted for by the placement of alkaline-metal ions in V _Cd ²⁻ cation vacancies, which are nonradiative recombination centers in these films. From the dependences of the luminsecence intensity of the doped films on the synthesis conditions (deposition temperature, concentration of doping impurities, type of doping metal), the parameters that ensure the maximum luminescence intensity of the films are determined as T_dep ≈ 450°C and C_Me = 1·10⁻⁵ at %. The luminescence intensity decreases by 1–3% upon exposure of the films to UV light (λ_max = 365 nm, I = 10²¹ quanta·sec·cm⁻¹) for several hours. This is indicative of the stability of these films against UV radiation. __________ Translated from Zhurnal Prikladnoi Spektroskopii Vol. 74, No. 3, pp. 362–366, May–June, 2007.     

稀土掺杂硅基薄膜的高效发光特性

测量了在不同离子注入剂量,不同退火条件下的Nd注入Si基晶片室温光致发光谱,结果表明它们均具有蓝、紫发光峰,且发光稳定。在一定范围内发光效率随掺杂浓度的增加而增大,随退火条件的不同而改变。在实验室条件下,对掺杂硅片和单晶硅片进行电化学腐蚀制成多孔硅样片,同时用适当配比的HNO3对以单晶硅为基底的多孔硅进行处理,测试了腐蚀后各类样品的光致发光（PL）谱。发现掺稀土Nd的多孔硅和用HNO3处理的多孔硅的发光效率有显著提高。     

MOCVD方法生长的氧化锌薄膜及其发光特性

近年来,随着近紫外光发射氧化锌薄膜研究的进展,许多先进的薄膜生长手段被广泛采用。本文探索了用MOCVD方法在硅衬底上生长氧化锌薄膜的方法,试验了用几种不同的有机金属源生长ZnO薄膜;研究了源材料及生长压力和温度对薄膜生长的影响;观察了样品的室温光致发光光 谱。通过与溅射方法生长的ZnO薄膜的比较,提出了影响材料结构和发光特性的可能原因。     

Photo- and Thermobleaching of Luminescence Centers in Synthetic Opals

It has been found that on exposure of specimens of synthetic opal to UV radiation, luminescence is excited in them (337 nm) that has spectral maxima at 400 and 500 nm. Its duration at half-height of a pulse is 9 nsec, and there is a weak slow component with τ ∼ 1 μsec. The spectrum and intensity of the luminescence depend on the duration of irradiation and temperature. The luminescence bands revealed relate to two individual luminescence centers, namely: the shortwave one, caused by the luminescence centers formed in the bulk of the opal, and the longwave one, due to those formed on the opal surface. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 5, pp. 622–626, September–October, 2005.     

Luminescence excitation spectra and characteristics of luminescence centers with overlapping absorption bands

For an ensemble of different types of luminescence centers with overlapping absorption bands, with no restrictions on the optical densities, we have obtained relations describing the luminescence excitation spectra for each type of center. We consider transformations of the relations in some limiting cases. We suggest a procedure for using the equations obtained to determine the characteristics of the luminescence centers. Some of these procedures have been experimentally implemented in study of intrinsic radiation color centers in lithium fluoride crystals. We have determined the ratios of the luminescence quantum yields for F₂ and F₃⁺ color centers, and we have observed that a major role is played by nonradiative transitions in deactivation of the first excited singlet state of F₃⁺ centers. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 365–371, May–June, 2008.     

SiO2干凝胶中CdS量子点的光致发光性质

以正硅酸乙酯(TEOS)为SiO2的前驱物,硝酸镉为镉源,硫脲为硫源,用溶胶-凝胶法制备了CdS量子点掺杂的SiO2干凝胶,利用XRD、紫外-可见吸收光谱、光致发光谱对其性质进行研究.样品的测试结果表明在SiO2干凝胶的网状结构中形成了CdS量子点,平均粒径为5.1 nm.SiO2凝胶中CdS吸收峰位置明显蓝移.在一定...     

Enhancement of Electrical and Optical Properties of Sodium Bromide Doped Carboxymethyl Cellulose Biopolymer Electrolyte Films

Abstract

Biodegradable ion conducting solid polymer electrolyte films of carboxymethyl cellulose (CMC) doped with sodium bromide (NaBr) with various weight percentages were prepared by a solution casting technique. Their structural, optical and electrical properties were studied by various experimental techniques in order to understand the impact of the sodium metal salt on the biopolymer CMC’s properties. The optical parameters namely the optical bandgap energy and the refractive index, showed a significant variable variation with the metal salt concentration. The maximum dc conductivity was found to be ～5.15?×?10^?4 S cm^?1 at room temperature for the sample with 20?wt% of NaBr content in the CMC matrix. The ionic conductivity and dielectric constant in general, increased with increase in metal salt content, affirming the increase in ion concentration. The calculated transference number showed that the conductivity was mainly due to ions. The increase in conductivity was due to an increase in degree of amorphousness of the polymer upon doping, as analyzed by their XRD spectra.     

Spectral Luminescence Properties of Potassium Aluminophosphate Glass Doped with Four-Valence Vanadium Complexes

Potassium aluminophosphate glass with the composition 30 K₂O-20 Al₂O₃-50 P₂O₅ (wt %) doped with four-valence vanadium was prepared and analyzed. Some physicochemical properties of the glass obtained and its absorption and luminescence spectra were investigated at 300 K. The existence of oxovanadium ions in the prepared glass was proved on the basis of the electronic absorption data. The bands observed in the electronic absorption spectrum were assigned to the e→b ₁ and e→a ₁ transitions. Intense luminescence of four-valence vanadium in the wavelength range 800–1100 nm was found. The average luminescence decay time amounts to 12 μs. __________ Translated from Optika i Spektroskopiya, Vol. 96, No. 6, 2004, pp. 926–928. Original Russian Text Copyright ? 2004 by Batyaev, Linnikov, Lipatova.     

Luminescence of Thin Films of Lead and Bismuth Tungstates

The luminescence spectra of thin films of PbWO₄ and Bi₂WO₆ were investigated. It is shown that these spectra are similar and that they consist of three individual bands in the blue (2.80 eV PbWO₄ and 2.93 eV Bi₂WO₆), green (2.35 eV PbWO₄ and Bi₂WO₆), and red (1.75 eV PbWO₄ and 1.90 eV Bi₂WO₆) spectral regions. The differences in the nature of the absorption centers of excitation energy are established. The distinguishing features displayed by the temperature dependences of the individual emission bands in the PbWO₄ films are explained by energy migration between emission centers via transfer of free carriers through the conduction and valence bands.     

Si基沉积ZnO薄膜的光谱特性

利用同步辐射真空紫外光研究了Si基沉积ZnO薄膜的发射光谱、激发光谱及其湿度依赖。首次观测到高于ZnO禁带宽度的发射带（290nm),并初步指定其来源。     

溶胶-凝胶法制备Zn1-xMgxO薄膜及其发光性质

采用溶胶-凝胶工艺在玻璃衬底上制备了Zn1-xMgxO(x=0.1,0.2,0.3,0.4,0.5,0.6,0.7)薄膜。X射线衍射(XRD)谱测试结果发现:在0.10.3时出现MgO立方相。薄膜光致发光谱研究表明紫外发光峰随Mg含量的增加向短波方向移动,且随着退火温度的升高发生明显蓝移,禁带宽度增大。但是退火温度为590℃的样品较560℃样品的发光峰出现红移。     

Luminescence of silver chloride microcrystals upon photoexcitation by different methods

The luminescence spectra of AgCl microcrystals were measured in two different regimes: in the regime of excitation of stationary luminescence and in the regime of photostimulated burst of luminescence. Differences between the spectra of stationary luminescence and the spectra of photostimulated-luminescence burst in the range between 430 and 590 nm have been found. The luminescence spectra are complex; the ratio of intensities for elementary components changes with the technique of excitation. Differences in the form and composition of complex luminescence bands obtained under different conditions of registration are attributed to the recombination interaction of the luminescence centers. It is shown that analysis of the dependences of intensity ratios for the elementary components of a complex luminescence band on the exciting-radiation intensity allows one to evaluate the mechanism of recombination in elementary bands provided that the mechanism is known for at least one luminescence band.__________Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 1, pp. 85–89. January–February, 2005.     

Influence of the Structure of the MEu(PO3)4 Crystals on Their Luminescent Properties

The influence of the M⁺ cations of alkali metals on the luminescent properties of the Meu(PO₃)₄ crystals, where M represents Li, Na, K, Rb, and Cs, is considered. The nonlinear dependences of the spectral position of the barycenters in the J components of the ⁷ F term of Eu³⁺ on the ionic radius R(M⁺), which are individual in the series of crystals of chain and cyclic structure, have been revealed. It is shown that the liability of the ligands of the europium complex in MeEu(PO₃)₄ to the polarizing action of the cations of alkali metals is manifested as an intermediate dependence of the luminescence lifetime of Eu³⁺ on R(M⁺).     

球形BaZnF_4∶Yb,Er纳米颗粒的热分解法合成及其上转换发光性质

采用热分解法制备了Ba Zn F4∶Yb,Er纳米颗粒。通过荧光分光光度计、X射线粉末衍射仪(XRD)和透射电子显微镜(TEM)对样品进行了表征。合成样品的形貌为球形,晶相为四方相,平均粒径为8 nm。当敏化剂Yb3+和激活剂Er3+的掺杂摩尔分数分别为20%和4%时,样品的发光性能较好。绿光和红光发射对应的辐射跃迁分别为Er3+离子的2H11/2→4I15/2(绿光)和4S3/2→4I15/2(绿光),以及Er3+离子的4F9/2→4I15/2(红光)。     

Eu~(3+)掺杂方钠石荧光材料的合成及发光特性

采用水热反应及后期热处理工艺合成了Eu3+掺杂方钠石结构的荧光材料Na8Al6Si6O24(OH)2·(H2O/NO3)2∶Eu3+。SEM图像显示,所合成的样品由一些长棒状和不规则多面体结构组成,平均粒径约为0.6μm和2μm。样品在394 nm(对应于Eu3+离子的7F0→5L6跃迁)激发下发出单色性较好的红色荧光,相应的色坐标值为(0.613 6,0.337 7),色纯度为85.5%,量子效率为0.36。随着Eu3+掺杂摩尔分数的增大,样品的红色荧光增强。当Eu3+摩尔分数超过7%时发生部分相变现象。发光热猝灭研究发现,样品的相对亮度和红色比在37~100℃内比较稳定。     

CdS及其包裹型纳米颗粒PVA基复合膜的特性研究

以聚乙烯醇 (PVA)、六偏磷酸钠为分散剂 ,采用溶胶法合成了 Cd S纳米胶体颗粒 ,制备出 Cd S及其包裹型纳米颗粒 PVA基复合膜。通过光子相干光谱粒度仪 (PCS)、紫外 -可见吸收光谱 (UV- VIS)、荧光光谱 (PL)对样品进行了初步表征。结果表明 ,Cd S纳米颗粒 PVA基复合膜的紫外 -可见吸收光谱有明显的蓝移现象 ,所发荧光主要由表面态发射引起 ;包裹型 PVA基复合膜所发荧光主要由带边发射引起     

Ba2+离子掺杂CsPbBr3蓝光量子点合成及其光学性能

近年来,全无机卤素钙钛矿CsPbX3(X=Cl,Br,I)因其荧光带宽窄、带隙可调、合成工艺简单以及荧光量子产率(Photoluminescence quantum yield,PLQY)高等优点而被应用于光电器件领域.但相比于PLQY接近于100％的红光与绿光CsPbX3量子点,PLQY低于10％的蓝光量子点光学性能...     

Luminescence of Higher Plants upon Excitation by Laser Radiation with Different Energy and Time Parameters

The luminescence response of the leaves of higher plants exposed to laser radiation with different energy and time parameters has been investigated at a wavelength of 685 nm. The plants were irradiated by laser radiation at 1060, 632, and 530 nm. Radiation at = 632 nm was used as the control. It is shown that radiation at = 1060 nm suppresses photosynthesis, whereas that at = 530 nm stimulates it.     

GaN薄膜的蓝光和红光发射机理研究

由于生长工艺的不完善,非掺杂GaN薄膜中通常存在未知的杂质和缺陷,产生与这些未知杂质和缺陷能级相关的发光。报道了非掺杂GaN薄膜的692nm红色发光．并研究了非掺杂GaN薄膜的蓝、红色发光的发射机理;利用作者提出的吸收归一化光致发光激发光谱,直接测量出了非掺杂GaN薄膜的蓝、红色发光的初始态能级,确定蓝色发光为施主-价带跃迁复合,而红色发光为施主-受主跃迁复合;给出了黄、蓝、红光的发射模型。所取得的结果对于确定未知杂质和缺陷的种类具有重要的参考价值。     

掺Er磷酸盐玻璃中红外发光特性研究

报道了一种最新型可用于1．5μm光纤通信传输介质的掺Er^3 的磷酸盐玻璃,通过对其吸收谱的测量,可看到在970nm附近有一很强的吸收峰,适合于采用LD激光泵浦。我们在发射波长为970nm的半导体激光器激发下测量了这种材料的发射谱,观察到在红外波段1540nm处在强发射峰。我们从吸收谱出发拟合出了J－O强度参数,进而计算出了Er^3 离子各相关跃迁的理论振子强度、实验振子强度及自发辐射系数,从结果可得出理论和实验是相符的。