The effect of temperature on carrier transport in molecularly doped polycarbonate

Hole transport in low-polarity polystyrene (PS) doped with 10 wt % tritolylamine was studied. The radiation-induced mode of the time-of-flight technique (TOF) with the carrier generation zone of a variable thickness was used. A theoretical treatment of the data in terms of the Gaussian disorder model has shown the mobility value to be fundamentally inconsistent with the flat shape of the plateau, a contradiction that cannot be resolved within the framework of this model. It has been shown that hole transport is actually dispersive, rather than quasi-equilibrium. The contribution of radiation conductivity of the polymer matrix to the TOF signal was evaluated.     

The effect of temperature on carrier transport in molecularly doped polycarbonate

The effect of elevated temperature on the pattern of current transients and the hole mobility in polycarbonate doped with 20 and 30 wt % aromatic hydrazone was studied. With the use of homogeneous carrier generation mode, it was found that the shape of the current transient varies with an increase in the temperature in qualitative agreement with the prediction of the multiple-trapping theory with the exponential trap energy distribution. The apparent activation energy of hole mobility is 0.41 eV in the classical measurement mode and 0.55 eV in the case of homogeneous irradiation.     

Porphyrin Supramolecule as Surface Carrier Modulator Imparts Hole Transporter with Enhanced Mobility for Perovskite Photovoltaics

Modulating the surface charge transport behavior of hole transport materials (HTMs) would be as an potential approach to improve their hole mobility, while yet realized for fabricating efficient photovoltaic devices. Here, an oxygen bridged dimer-based monoamine Fe^III porphyrin supramolecule is prepared and doped in HTM film. Theoretical analyses reveal that the polaron distributed on dimer can be coupled with the parallel arranged polarons on adjacent dimers. This polaron coupling at the interface of supramolecule and HTM can resonates with hole flux to increase hole transport efficiency. Mobility tests reveal that the hole mobility of doped HTM film is improved by 8-fold. Doped perovskite device exhibits an increased efficiency from 19.8 % to 23.2 %, and greatly improved stability. This work provides a new strategy to improve the mobility of HTMs by surface carrier modulation, therefore fabricating efficient photovoltaic devices.     

Interpretation of data obtained through the use of a version of the time-of-flight technique with a variable thickness of the generation zone

The transient-current curves recorded for molecularly doped polycarbonate are theoretically studied with a version of the time-of-flight technique with a variable thickness of the generation zone. A mixed-carrier-transport model was used, having been proposed in the literature as an alternative to the viewpoint that treats a plateau as an artifact of the optical version of the time-of-flight technique with surface carrier generation. A program for numerical calculation is developed for the model, with the hole transport being dispersive in the generation layer and Gaussian in the rest of the polymer. The model parameter values are selected according to results of independent measurements. It is shown that the mixed-transport model does not explain the experimental observations.     

Effect of preliminary electron-beam irradiation on hole transport in molecularly doped polycarbonate

The effect of preliminary electron-beam irradiation on hole transport in a molecularly doped polymer was studied with the use of the time-of-flight technique in the radiation-induced mode. Specimens that exhibit a plateau on their time-of-flight curves were selected for the study, since they suggest the occurrence of quasi-equilibrium transport in the system according to the conventional point of view. In the extremely small signal mode, current transients in the case of bulk irradiation have a form corresponding to dispersive, rather than Gaussian, transport, although hole movement is observed in the presence of charged sites (trapped electrons). On passing to the moderately large signal mode (preirradiation to a dose of up to 5 Gy), the current transients undergo noticeable changes, which might be mistakenly interpreted as evidence for the influence of charged sites on hole transport in accordance with the predictions of the dipolar glass theory. In actuality, these changes are due to the effect of a space charge field and the hole mobility remains almost unchanged in this case. The appearance of the plateau on the current transients is an artifact of the procedure, and the hole transport is dispersive.     

Hole transport in polystyrene and polycarbonate doped with polar dopants

Hole transport in PS and PC doped with low-molecular-mass dopants with dipole moments larger than 3D is investigated. Both near-surface and bulk charge-carrier generation techniques are used. There is good agreement between the experimentally measured values of hole mobility and the published data. It is shown that, for the investigated systems, the hole transport is nonequilibrium and is well described by the multiple-trapping model with the Gaussian trap distribution over energy. The presence of a flat plateau on the time-of-flight curves does not necessarily mean establishment of the quasi-equilibrium hole transport in the system.     

Device physics of polymer light-emitting diodes

This article reviews a device model for the current and light generation of polymer light-emitting diodes (PLEDs). The model is based on experiments carried out on poly(dialkoxy-p-phenylene vinylene) (PPV) devices. The transport properties of holes in PPV have been investigated with indium tin oxide (ITO)/PPV/Au hole-only devices. The hole current is dominated by bulk conduction properties of the PPV, in contrast to previous reports. As the hole current is space-charge limited, the hole mobility as a function of electric field E and temperature T can be directly determined. The hole mobility exhibits a field dependence ln(μ) ∼ ✓E as also has been observed from time-of-flight experiments in many molecularly doped polymers and amorphous glasses. For the zero-field hole mobility an activation energy of 0.48 eV is obtained. The electron conduction in PPV has been studied by using Ca/PPV/Ca electron-only devices. It appears that the electron current is strongly reduced by the presence of traps with a total density of 10¹⁸ cm⁻³. Combining the results of electron- and hole-only devices a device model for PLEDs is proposed in which the light generation is due to bimolecular recombination between the injected electrons and holes. It is calculated that the unbalanced electron and hole transport gives rise to a bias-dependent efficiency. By comparison with experiment it is found that the recombination process in PPV is for 95% nonradiative. Furthermore, the experiments reveal that the bimolecular recombination process is thermally activated with an identical activation energy as measured for the charge carrier mobility. This demonstrates that the recombination process is of the Langevin-type, in which the rate-limiting step is the diffusion of electrons and holes towards each other. The occurrence of Langevin recombination explains why the conversion efficiency (photon/carrier) of a PLED is temperature independent. © 1998 John Wiley & Sons, Ltd.     

Charge carrier transport in poly[methyl(phenyl)silylene]: the effect of additives

Poly[methyl(phenyl)silylene], PMPSi, was doped with compounds of the electron acceptor type. The charge carrier mobility increases with increasing electron affinity of the acceptors having zero dipole moments. At the same time the energy distribution of hopping states narrows. On the other hand, the hole drift mobility is influenced by the dipole moment of the dopand. The electrostatic charge carrier‐dipole interaction causes a broadening of the energy distribution of transport states which results in a decrease in the charge carrier mobility. The charge carrier transport can be explained by the disordered polaronic theory, according to which the activation energy of charge carrier mobility has contributions based on the dynamic disorder, i.e. the polaronic barrier, and on the static disorder, i.e. the variation of the energy of transport states as a result of the environment. Copyright © 2001 John Wiley & Sons, Ltd.     

共轭聚合物薄膜中光生载流子的产生及输运机制

对共轭聚合物光生载流子的产生机制进行了初步探讨,分析了由最初产生的电子 空穴对经过晶格驰豫之后形成极化子 激子的热离化过程,认为同一链上的激子会迅速复合,只有链间激子对光电流作出贡献.研究了共轭聚合物中载流子的输运机制,导出了共聚物的电导率公式,其计算值与实验结果符合,我们认为是极化子的链间跃迁实现了整个共聚物的电导和光致发光,较好地解释了实验事实.     

Hole transport and bimolecular recombination of charge carriers in polycarbonate molecularly doped with aromatic hydrazone

General questions about hole transport and bimolecular recombination of charge carriers in molecularly doped polycarbonate with a low dopant concentration (10 wt %) are considered. The experiment is performed via a radiation-induced time-of-flight technique with bulk generation of charge carriers. Transient-current curves are calculated numerically via a multiple-trapping model. There is good agreement between the calculated and experimental results on the transient-current waveform. Nonequilibrium hole transport is observed in the studied molecularly doped polymer, and the bimolecular recombination is close to the Langevin recombination as described by the multiple-trapping model.     

Generation of charge carrier pairs in tetracene layers

The mechanism of negative and positive charge carrier generation by light absorption in tetracene layers has been studied. We conclude that there are different processes determining electron and hole production. Positive charge carriers are produced without recombination while the negative charge carrier generation depends strongly on the recombination process. The experimental data for charge carrier generation in tetracene layers are treated theoretically taking into account photogeneration, recombination of charge carriers, trapping and transport processes inside the sample.     

The universal nature of dispersive transport in molecularly doped polymers

The time-of-flight technique is used to measure hole mobility in molecularly doped polycarbonate and polystyrene that contain both polar and weakly polar additives. The two versions of the technique with the bulk and surface generation of charge carriers under small-signal conditions are employed. Numerical calculations show that the time dependence of the transient-current curves obtained with the first version of the technique is in agreement with the theory of multiple trapping for an exponential energy distribution of traps. In the case of time-of-flight curves with surface generation, the run of the post-transit branch is likewise consistent with the theory, whereas this consistency is often violated for the pretransit branch of the curves. This result is due to the effect of the defective surface layer of a polymer, which is not taken into account in numerical calculations. The results show that the hole transport in the studied molecularly doped polymers is dispersive. An increase in the polarity of the polymer matrix and the dopant drastically decreases the hole mobility and, at the same time, increases its field and temperature dependence.     

Organic electroluminescent devices with molecularly doped polymers and anode interface phthalocyanine layer

We studied the properties of organic electroluminescent devices using molecularly doped polymers as a hole transport layer and having a metal-free phthalocyanine (H₂Pc) layer between anode and hole transport layer. A vacuum-deposited H₂Pc metastable layer was converted to a more stable microcrystalline layer by dichloromethane solvent treatment. The devices exhibited good current–voltage and luminance properties. Because the activation energy of carrier transport for the devices with H₂Pc was almost the same as that for the devices without it, it is considered that the H₂Pc layer in this device is electrically inert. This means that improved contact efficiency may be obtained at the anode interface due to the introduction of the H₂Pc layer. © 1997 John Wiley & Sons, Ltd.     

Dispersive transport in molecularly doped polymers: Theory and experiment

Theoretical and experimental studies of the carrier transport in molecularly doped polymers (MDPs) have been reported. Theoretical analysis uses the multiple trapping (MT) model with an exponential and Gaussian trap distributions. Experimental technique is based on an electron gun technology enabling one to conduct time of flight measurements using the surface and the bulk carrier generation. The list of MDPs tested includes both polar and non-polar systems, some with varying dopant concentration. Experimental results are compared to the MT model predictions as well as the mainstream theories of the hopping conduction in MDPs.     

掺杂PEDOT：PSS空穴传输层在钙钛矿太阳能电池中的应用

钙钛矿太阳能电池(PSCs)因易于制备、生产成本低和能量转换效率高而受到广泛关注。聚乙撑二氧噻吩-聚(苯乙烯磺酸盐)(PEDOT∶PSS)由于具有易低温加工、透光度高和适宜空穴迁移率等特点而成为PSCs中空穴传输层的研究热点。本文简述了倒置PSCs的结构及工作原理,重点介绍了掺杂PEDOT∶PSS空穴传输层在PSCs领域的研究现状。分别从有机化合物掺杂剂、无机化合物掺杂剂和表面活性剂掺杂剂三个类别概述了掺杂PEDOT∶PSS空穴传输层对PSCs性能的影响。最后,对该领域存在的问题提出潜在措施以改善PEDOT∶PSS掺杂层在PSCs中的应用。     

Origins of hole doping and relevant optoelectronic properties of wide gap p-type semiconductor, LaCuOSe

LaCuOSe is a wide band gap (～2.8 eV) semiconductor with unique optoelectronic properties, including room-temperature stable excitons, high hole mobility ～8 cm(2)/(Vs), and the capability of high-density hole doping (up to 1.7 × 10(21) cm(-3) using Mg). Moreover, its carrier transport and doping behaviors exhibit nonconventional results, e.g., the hole concentration increases with decreasing temperature and the high hole doping does not correlate with other properties such as optical absorption. Herein, secondary ion mass spectroscopy and photoemission spectroscopy reveal that aliovalent ion substitution of Mg at the La site is not the main source of hole doping and the Fermi level does not shift even in heavily doped LaCuOSe:Mg. As the hole concentration increases, the subgap optical absorption becomes more intense, but the increase in intensity does not correlate quantitatively. Transmission electron microscopy indicates that planar defects composed of Cu and Se deficiencies are easily created in LaCuOSe. These observations can be explained via the existence of a degenerate low-mobility layer and formation of complex Cu and Se vacancy defects with the assistance of generalized gradient approximation band calculations.     

Generation of excess charge carriers in molecularly doped polymers by electron-beam irradiation

The processes of generation and transport of excess charge carriers in molecularly doped polycarbonate and polystyrene were experimentally studied at room temperature. The polymers were ionized by 7-and 50-keV electrons. The radiation-chemical yield of free ions was determined by means of the universal method based on the combination of the time-of-flight technique in two carrier generation modes (surface and bulk generation) with the measurement of nonsteady-state conductivity. It was shown that the radiation-chemical yield of free ions under irradiation by 7-keV electrons is almost the same as that in the case of 50-keV electrons, despite the substantially different values of the linear energy transfer for these electrons.     

Universal technique for studying electron transport in polymers

A universal technique was developed for studying electron transport in polymers, which consists in the combination of the time-of-flight technique in the surface and bulk carrier generation modes with measurement of transient radiation-induced conductivity. Central to the technique in question is the time-of-flight method with homogeneous irradiation. The procedure was implemented on the basis of an ELA-50 electron beam device with variable electron energy (3–50 keV). The practicability of the universal technique was demonstrated using the model polymers polyvinylcarbazole and molecularly doped polycarbonate as examples.     

输运层厚度对双层有机器件复合发光的影响

采用ITO/PVK/Alq/Al双层电致发光(EL)结构,制备了三种载流子输运层厚度分别为30、 60、 120 nm,发光层厚度均为300 nm的有机薄膜EL器件,测试其EL谱及J-V特性曲线.根据有机EL器件中载流子的产生和输运过程导出了载流子复合几率及电子和空穴密度分布表示式,用以解释其发光强度随输运层厚度的变化关系,用一维无序结构载流子随机跃迁模型讨论输运层厚度对器件电流密度及启动电压的影响,探讨了载流子在薄膜中的输运过程,其理论与实验符合得很好.     

Theoretical study on charge transport of quinacridone polymorphs

The charge carrier transporting ability in the polymorphism of quinacridone (QA) has been studied using density‐functional theory and Marcus charge transport theory. The theoretical results indicated quinacridone has good electron transport ability and electron mobilities of all the polymorphism are at 10^?2 magnitude. But its hole mobility, which varied with the different molecular packing, is at range of 10^?1–10^?3 magnitude. The difference of charge carrier mobilities among the polymorphism is originated from the different packing mode. © 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2011