喷雾工艺制备的高性能有机光敏薄膜晶体管

以聚3-己基噻吩(P3HT)为有机层、价格低廉的聚甲基丙烯酸甲酯(PMMA)为绝缘层制备了底栅顶接触型结构的有机薄膜晶体管(OTFT)。采用一种新型喷雾工艺来制备器件的有机薄膜层,通过测量有机薄膜晶体管的电学特性,可得出应用喷雾制备的器件有较好的性能。在100 mW/cm2标准模拟太阳光照下,测量基于P3HT的有机薄膜晶体管器源漏电流随时间的变化特性,结果表明基于P3HT的有机光敏薄膜晶体管,不仅具有明显的响应特性,而且具有很好的恢复特性。同时,对比黑暗和光照1,2,4 min下的OTFT特性转移曲线,得到器件的阈值电压随时间的变化曲线。     

有机薄膜晶体管中接触效应的研究

研究了接触效应对有机薄膜晶体管性能的影响.首先在n型重掺杂Si片上制备了以M_OO₃修饰的Al电极为源漏电极的Pentacene基OTFTs(organic thin film transistors),器件场效应迁移率μ_ef达到0.42 cm²/V ·s,阈值电压V_T为-9.16 V,开关比4.7×10³.通过中间探针法,对器件电势分布做了定性判断 关键词： 有机薄膜晶体管 场效应迁移率 接触效应 电荷漂移     

双异质结结构的双极型有机薄膜晶体管的研制

制备了基于F₁₆CuPc和CuPc的双异质结结构的双极型有机薄膜晶体管。该器件的载流子迁移率是相同工艺制备的F₁₆CuPc和CuPc双层单异质结有机薄膜晶体管器件的4~5倍。同时,该双异质结结构还能调整载流子的阈值电压,减少双层结构对薄膜厚度等工艺条件的苛刻要求。这种双异质结结构为提升双极型有机薄膜晶体管器件的性能提供了一种有效方法。     

溶液法制备有机薄膜晶体管的碳纳米管电极

采用十二烷基磺酸钠(SDS)和聚(3,4-乙撑二氧噻吩)/聚苯乙烯磺酸盐(PEDOT/PSS)做分散剂制备了分散性能良好的多壁碳纳米管溶液,借助聚二甲基硅氧烷(PDMS)在硅片表面形成亲水疏水区域,采用溶液法制备了图案化的碳纳米管薄膜电极。应用图案化碳纳米管电极制作聚(3-己基噻吩)有机薄膜晶体管,以SDS和PEDOT/PSS为分散剂获得的器件迁移率分别为0.01 cm2.V-1.s-1和0.007 5 cm2.V-1.s-1,开关电流比均为3×103。     

不同表面修饰制备高性能柔性薄膜晶体管

分别采用六甲基二硅胺(HMDS,Hexamethyldisilazane)和聚苯乙烯/氯硅烷复合材料修饰聚乙烯基苯酚(PVP)绝缘层制备了底接触的有机薄膜晶体管并研究了其半导体层的表面形貌和器件的电学性能。原子力显微镜观察发现,并五苯半导体薄膜在不同的界面修饰上的生长形貌产生了很大变化。在PVP上沉积的并五苯晶粒尺寸都小于150 nm,经过聚苯乙烯/氯硅烷复合材料和HMDS处理后的PVP表面生长的并五苯晶粒尺寸则分别在200~400 nm和400~600 nm。大尺寸的晶粒能够减小器件沟道内的陷阱浓度,从而有效地提高电学性能。PVP绝缘层采用聚苯乙烯/氯硅烷和HMDS修饰后,与未修饰的器件相比迁移率分别提高了58倍和82倍。采用HMDS作为表面修饰层制备柔性OTFT,并五苯场效应晶体管的关态电流约为10-9A,电流的开关比超过104,最大场效应迁移率约可达0.338 cm2·V-1·s-1.     

有机薄膜晶体管及其在传感器方面的应用

有机薄膜晶体管因其有机材料种类的多样性、简单的制备工艺和柔性兼容性等优点,在有机半导体器件的研究领域中广受关注。介绍了有机薄膜晶体管的研究进展,并进一步分析了有机薄膜晶体管的基本结构、工作原理及电学特性。同时介绍了有机薄膜晶体管作为传感器的发展进程,重点从有机薄膜晶体管作为传感器的敏感性、选择性等方面阐述,对有机薄膜晶体管作为传感器的优势做了详细的介绍。最后分析了有机薄膜晶体管作为传感器的工作机理。     

有机薄膜晶体管及其在传感器方面的应用

有机薄膜晶体管因其有机材料种类的多样性、简单的制备工艺和柔性兼容性等优点,在有机半导体器件的研究领域中广受关注。介绍了有机薄膜晶体管的研究进展,并进一步分析了有机薄膜晶体管的基本结构、工作原理及电学特性。同时介绍了有机薄膜晶体管作为传感器的发展进程,重点从有机薄膜晶体管作为传感器的敏感性、选择性等方面阐述,对有机薄膜晶体管作为传感器的优势做了详细的介绍。最后分析了有机薄膜晶体管作为传感器的工作机理。     

有机薄膜晶体管驱动聚合物发光二极管研究

研究了有机薄膜晶体管(OTFT)与聚合物发光二极管(PLED)集成制备技术和相关物理问题.OTFT结构为栅极钽(Ta)/绝缘层五氧化二钽(Ta2O5)/有源层并五苯(Pentacene)/源漏极金(Au);PLED器件结构为ITO/PEDOT:PEO(polyethylene oxide)/P-PPV或MEH-PPV/Ba/Al.PEDOT:PEO,P-PPV和MEH-PPV薄膜层均采用丝网印刷技术,实现了OTFT与PLED器件集成发光.其中OTFT器件的阈值电压为-7V,迁移率为0.91cm2/(V.s),并通过OTFT驱动得到以P-PPV和MEH-PPV为发光层的PLED器件的发光亮度分别达到124和26cd/m2,电流效率分别为12.4和1.1cd/A.利用丝网印刷技术可以有效控制高分子薄膜的沉积区域,实现功能器件的集成.     

低电压有机薄膜晶体管驱动顶发射有机发光二极管的集成像素的研制

研究了有机薄膜晶体管(OTFT)驱动顶发射有机发光二极管(OLED)的集成制备技术。通过减小栅绝缘层的厚度,达到降低OTFT工作电压的目的。OLED采用标准的绿光器件,利用超薄的Al薄膜作为半透明阴极实现顶发射功能。实现了低电压工作的OTFT与顶发射OLED的集成,其中OTFT的阈值电压为2.0 V,饱和场效应迁移率为0.40 cm2·V-1·s-1。基于实验数据,对集成像素的电特性进行了计算分析,在-5~-10 V的栅电压调控下,像素亮度能在50~250 cd/m2的范围内实现线性灰度调控。     

基于有机薄膜晶体管的光写入多级存储器

由于依靠不断缩小存储单元尺寸来提升单位面积存储能力的传统方法将会面临着器件尺寸的物理极限等瓶颈,人们逐渐将目光投向了能够在单一器件上实现高密度存储的多级存储器件。本文利用有机薄膜晶体管中存在的持续光电导率(PPC)效应制备了一个光写入操作的多级存储器件,有效地避免了电写入操作对器件的接触破坏性和较大功耗问题。研究了在不同功率(60,100,150μW/cm²)和不同持续时间(50～1 000 ms)700 nm光写入脉冲作用下的器件存储状态,器件在光功率为60μW/cm²、持续时间为100 ms的光脉冲下展现出了低至0.189 nJ的极低工作功耗。通过对器件施加16个连续光写入脉冲证实器件具有16个有效的存储状态,实现了存储容量为4 bits的多级光写入存储功能。     

Piezoelectric thick film ultrasonic transducers fabricated by a sol-gel spray technique

Thick film broadband ultrasonic transducers (UTs) produced by a sol-gel spray technique and operated below 10 MHz are presented. These UTs are formed by dispersing PZT and LiTaO3 particles, respectively in Al2O3 and PZT sol-gel solution. The 50-100 microm thick films have been deposited on curved steel, flat steel and aluminum substrates and steel rods. Ultrasonic pulse-echo signals with a signal to noise ratio of more than 25 dB are experimentally obtained for the operating temperatures up to 250 degrees C.     

Characterization of scandia doped pressed cathode fabricated by spray drying method

Scandia doped pressed cathode was prepared by a new method of spray drying combined with two-step hydrogen reduction process. The Sc₂O₃ and barium-calcium aluminate co-doped powders have sub-micrometer size in the range of 0.1-1 μm and scandium oxide and barium-calcium aluminate are distributed evenly in the powders. The cathodes sintered by powder metallurgy at 1600 °C_b have a smooth surface and sub-micrometer grain structure with homogeneous distribution of scandium, barium, calcium and aluminum which are dispersed over and among the tungsten grains. This cathode has good emission, e.g., the current density of this cathode reaches 31.50 A/cm² at 850 °C_b. After proper activation, the cathode surface is covered by a Ba-Sc-O active substances layer with a preferable atomic ratio, leading to its good emission property. The evaporation activation energy of SDP cathode with 4.58 eV is the highest among the Ba-W, M-type and SDP cathodes, and the average evaporation velocity v_t of SDP cathode with 1.28 × 10⁻⁸ g cm⁻² s⁻¹ at 1150 °C_b is the lowest one.     

High performance organic planar heterojunction solar cells by controlling the molecular orientation

A highly efficient planar heterojunction OSC based on zinc phthalocyanine (ZnPc)/fullerene (C₆₀) by controlling the orientation of the ZnPc by using copper iodide (CuI) as the interfacial layer is reported. The proportion of face-on ZnPc molecules was increased significantly on the CuI layer compared to the layer without the CuI layer, which was analyzed with wide-angle X-ray scattering (WAXS) and optical absorption. The power conversion efficiency (PCE) of the orientation controlled planar heterojunction OSC was remarkably enhanced to 3.2 ± 0.1% compared with 1.2 ± 0.1% of the conventional OSCs without the control of the molecular orientation. By inserting the 3-nm-thick CuI layer, J_SC, V_OC and FF have increased from 4.6 ± 0.2 to 8.9 ± 0.2 mA cm^?2, from 0.48 ± 0.01 to 0.59 ± 0.02 V, and from 0.56 ± 0.01 to 0.61 ± 0.02, respectively. V_OC enhancement is discussed with the result of the ultraviolet photoemission spectra (UPS) measurements.     

Electrochemical properties of nanostructured lanthanum strontium manganite cathode fabricated by electrostatic spray deposition

Electrostatic spray deposition was applied to prepare nanoporous lanthanum strontium manganite (LSM) films with high specific surface area (37.34 m²/g) for the cathode application in solid oxide fuel cell (SOFC). The electrochemical characteristics were investigated at a temperature range from 546 to 777 °C and oxygen partial pressure from 0.01 to 1.0 atm. The diffusion of atomic oxygen and oxygen ion transfer from three-phase boundary to the YSZ electrolyte were found to be the rate-determining steps for oxygen reduction reaction on LSM cathode. The polarization resistance of the LSM prepared using electrostatic spray deposition decreased from 15 to 1.2 Ωcm² with increasing temperature from 546 to 777 °C and the activation energy was 0.81 eV. It was demonstrated that the ESD method offers a promising approach for the preparation of electrochemically active nanoporous layers, particularly applicable for solid oxide fuel cells.     

High stability white organic light-emitting diode fabricated with the deposition of solvent premixed sources

This paper presents the characteristics of high-stability white organic light-emitting diodes (WOLEDs). For the preparation of WOLEDs with a single-emission layer (EML), the source materials of MADN, BCzVB, C6, and DCJTB were solvent premixed before evaporation. The structure of the WOLEDs was ITO/NPB (50 nm)/EML (40 nm)/Bphen (30 nm)/Al (200 nm). The materials that comprised the EML for dual- and tri-wavelength WOLEDs were MADN:BCzVB:DCJTB and MADN:BCzVB:C6:DCJTB, respectively. The energy transfer between the host and the dyes influenced the luminance efficiency and chromaticity coordinates of the devices. The maximum current efficiencies were 6.34 and 6.38 cd/A for the dual- and tri-wavelength WOLEDs, respectively. The efficiency of the WOLEDs was enhanced by C6 doping, although a slight variation in the chromaticity coordinates was observed, which was resulted from variations in the applied voltage.     

Bulk heterojunction organic photovoltaic cell fabricated by the electrospray deposition method using mixed organic solvent

A high‐efficiency bulk heterojunction organic photovoltaic cell (OPV) was achieved by the electrospray deposition method. The surface roughness of the P3HT:PCBM thin film can be reduced using the mixed solvent consisting of o‐dichlorobenzene (o‐DCB) and acetone. The effect of acetone concentration is related to its dielectric constant. Under an optimized concentration of acetone in o‐DCB (20 vol%), the P3HT/PCBM active layer with a smooth surface can be formed, and the power conversion efficiency of the OPV was 1.9%.

     

High Q silica microbubble resonators fabricated by arc discharge

Microbubble resonators combine the unique properties of whispering gallery mode resonators with the intrinsic capability of integrated microfluidics. Here an improved fabrication method of microbubble resonators is presented, based on the heating of a slightly pressurized capillary by a rotating arc discharge. Rotation of the electrodes, moved out of a fiber splicer, ensures a homogeneous distribution of the heat all over the capillary surface. The demonstrated microbubble resonators have Q factors up to 6×10(7) at 1550?nm. Microbubbles were filled with water and aqueous solutions of ethanol in order to test the refractive index sensing capabilities of such resonators, which also show a good temporal stability. The limit of detection of our microbubble resonator sensor is 10(-6)?RIU.     

Investigation of light programmable non‐volatile memory in an organic phototransistor

Excellent non‐volatile memory characteristics have been demonstrated under the optoelectric conditions for organic phototransistors (OPTs). The high photosensitivity shown as reversible shifts in light‐induced V_TH exhibits a large memory window for programming caused by the excited immobile carriers (electron) trapped as a function of the electrical bias and the light intensity. The long life span of stored electrons also reveals promising behavior with respect to data retention as well as the electrical reliability to serve as a data storage medium with the non‐volatile memory characteristic in OPTs. The V_TH recovery accelerated by the reversible bias stress for the stored charges under irradiation shows that the erasing behavior is clearly brought by the discharge process of long‐lived electrons occupied in deep states. Plausible mechanisms in the energy band are discussed for the programming and erasing process, which provides a fundamental understanding of the intrinsic charge storage behavior in OPTs. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Millimeter-scale self-collimation in planar photonic crystals fabricated by CMOS technology

We report self-collimating demonstration in planar photonic crystals (PhCs) fabricated in silicon-on-insulator (SOI) wafers using 0.18 μm silicon complementary metal oxide semiconductor (CMOS) techniques. This process is original in the context of self-collimating PhC. Emphasis was on demonstrating self-collimation effect through the use of standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhC were designed on 230 nm-top-Si layer using a square lattice of air-holes with 270 nm in diameter. The lattice constant of the PhC was 380 nm. The 1 mm self-collimation was observed at the wavelengths of 1620 nm.