Efficient subnanosecond diode-pumped passively Q-switched Nd:YVO4 self-stimulated Raman laser

Generation of efficient subnanosecond self-stimulated Raman pulses by a diode-pumped passively Q-switched Nd:YVO4/Cr4+:YAG laser is demonstrated. Experimental results reveal that self-frequency Raman conversion can be achieved with a c-cut Nd:YVO4 crystal in a nearly hemispherical cavity. At 2.0 W of incident pump power, the self-stimulated Raman laser produces stable 710-ps pulses at a Stokes wavelength of 1178.6 nm with 7.2 microJ of pulse energy at a 17-kHz repetition rate.     

Diode-pumped Nd:YxGd1-xVO4 crystal continuous-wave laser

The diode-pumped Nd:YxGd1-xVO4 crystal continuous wave (CW) laser operating at 1.06 μm with a simple plane-concave cavity and a "V-shaped" folded cavity for intracavity frequency-doubling have been studied. With the incident pump power of 8 W, an output power (1.06 μm) of 3.4 W was achieved,giving an optical conversion efficiency of 42.5%. 884 mW of stable green radiation was generated with the incident pump power of 5.9 W, giving an optical conversion efficiency of 15%.     

Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber

The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode(LD)end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber.These space-dependent rate equations are solved numerically.The dependences of pulse width,pulse repetition rate,single-pulse energy,and peak power on incident pump power are obtained.In the experiment,the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.     

Diode-pumped, Cr:YAG passively Q-switched and mode-locked Nd:YVO_4/KTP green laser

The phenomena of simultaneous Q-switching and mode-locking in a diode-pumped Nd:YVO4/Cr:YAG/ KTP green laser are reported and discussed in this paper. With 5.3-W pump power, by using a nearly hemispherical cavity (the cavity length is only 97 mm), the results of modulation depth of 70% and the period of 0.6 ns are obtained, the output power and the repetitive frequency of Q-switched pulse are 90 mW and 12 kHz, respectively.     

Diode-pumped passively Q-switched and mode-locked Nd:YLF laser with Cr4+:YAG saturable absorber

A diode-pumped passively Q-switched Nd:YLF laser was demonstrated by using saturable absorber of Cr4+:YAG. At the incident power of 7.74 W, pure passively Q-switched laser with per pulse energy of 210 Μj and pulse width of 19.6 ns at repetition rate of 1.78 kHz was obtained by using Cr4+:YAG with initial transmission of 80%. At the incident power of 8.70 W, a Q-switched mode-locking with average output power of 650 Mw was achieved, the overall slop efficiency was 16%, corresponding to the initial transmission of 85% of Cr4+ :YAG.     

Diode-pumped passively mode-locked Nd:CLNGG laser

Passive mode-locking of a diode-pumped Nd:CLNGG laser was demonstrated for the first time to our knowledge. The laser operated at a central wavelength of 1061.2 nm with a maximum average output power of 101 mW. The mode-locked pulses have pulse duration of 2.0 ps, a spectral bandwidth of 1.2 nm and a repetition rate of 88.4 MHz. The mode locking of the laser was enabled by a semiconductor saturable absorber mirror (SESAM).     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.     

Diode-pumped passively Q-switched intracavity frequency doubled Nd:GdVO4/KTP green laser

A compact diode-pumped passively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green-pulse laser was demonstrated, using Cr⁴⁺:YAG as a saturable absorber in a simple flat–flat cavity. With a 5.9 W incident pump power, a passively Q-switched green laser was obtained with an average power of 397 mW, repetition rate of 40 kHz, and pulse width of 40 ns, when the initial transmission of Cr⁴⁺:YAG was 85%. The shortest pulse width of 30 ns, the highest green peak power of 696 W and the maximum pulse energy of 21 μJ were obtained when the initial transmission of Cr⁴⁺:YAG was 70%. Under CW green operation, we obtained 440 mW output power.     

Diode-pumped passively mode-locked Nd:YVO4 laser at 914 nm

We demonstrate, for the first time, to our knowledge, a diode-pumped passively mode-locked Nd:YVO4 laser, operating on the 4F(3/2)-4I(9/2) transition of the neodymium ion at 914 nm. We obtained 8.8 ps pulses at approximately 914 nm at a repetition rate of 94 MHz, and an averaged output power of 87 mW by using a semiconductor saturable absorber mirror.     

Diode-pumped passively Q-switched Nd:GGG crystal with GaAs saturable absorber

We have experimentally studied the passive Q-switching performance of a diode-pumped Nd-doped gadolinium gallium garnet (Nd:GGG) laser with a GaAs saturable absorber. Stable Q-switched pulses as short as 9 ns with a repetition rate of 196.1 kHz have been obtained with an appropriately coated GaAs wafer used as the output coupler. At 12.44 W of the absorbed pump power, an average output power of 1.03 W has been obtained and the corresponding pulse energy and peak power are 5.25 μJ and 0.58 kW, respectively.     

Diode-pumped passively mode-locked Nd:CTGG disordered crystal laser

A diode-pumped passively mode-locked Nd: CTGG disordered crystal laser has been experimentally demonstrated for the first time to our knowledge. Mode locked with a semiconductor saturable absorber mirror, the laser generated 5.2 ps pulses at a repetition rate of 88 MHz. After intracavity dispersion compensation, the mode-locked pulses were shortened to 4.3 ps. Multiple emission wavelengths of the Nd:CTGG laser could be synchronously mode locked under dispersion compensation.     

Diode-pumped passively Q-switched Nd:YAG/SrWO4 intracavity Raman laser with high pulse energy and average output power

A diode-pumped passively Q-switched Nd:YAG/SrWO₄ intracavity Raman laser is presented. As high as 1.78?W average power is obtained at an incident pump power of 14.9?W with a pulse repetition frequency of 21.2?kHz. The highest pulse energy is 88.1???J obtained at a pump power of 13.7?W. The obtained pulse energy and average power are much higher than those of the previously reported diode-pumped passively Q-switched intracavity Raman lasers.     

Diode-pumped passively Q-switched yellow laser with SrWO4 Raman crystal and ceramic Nd:YAG gain medium

A diode-pumped passively Q-switched Nd:YAG/SrWO₄/KTP yellow laser is presented for the first time. As high as 1.02 W average output power was obtained at a pump power of 14.0 W with a pulse repetition frequency of 21.9 kHz and the corresponding diode-to-yellow conversion efficiency was 7.29%. The highest pulse energy of 56.2 μJ was obtained at a pump power of 7.2 W.     

Graphene-based passively Q-switched diode-side-pumped Nd:YAG solid laser

In this paper, a desirably simple, convenient and inexpensive saturable absorber mirror has been fabricated based on graphene, which has no wavelength selectivity. Moreover, there are no changes in the structure and characteristics of graphene. By inserting the graphene-PMMA SA mirror to the Nd: YAG laser, the shortest pulse width of 260 ns can be obtained with the single-pulse energy of about 8.32 μJ. The experimental results prove that our graphene-PMMA SA mirror is feasible and suitable for Q-switched lasers.     

Diode-pumped passively Q-switched 912 nm Nd:GdVO4 laser and pulsed deep-blue laser by intracavity frequency-doubling

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr⁴⁺:YAG laser and its efficient intracavity frequency-doubling to 456 nm deep-blue laser were demonstrated in this paper. Using a simple V-type laser cavity, pulsed 912 nm laser characteristics were investigated with two kinds of Cr⁴⁺:YAG crystal as the saturable absorbers, which have the different initial transmissivity (T_U) of 95% and 90% at 912 nm. When the T_U = 95% Cr⁴⁺:YAG was used, as much as an average output power of 2.8 W 912 nm laser was achieved at an absorbed pump power of 34.0 W, and the pulse width and the repetition rate were ∼ 40.5 ns and ∼ 76.6 kHz, respectively. To the best of our knowledge, this is the highest average output power of diode-pumped passively Q-switched Nd³⁺-doped quasi-three-level laser. Employing a BiBO as the frequency-doubling crystal, 456 nm pulsed deep-blue laser was obtained with a maximum average output power of 1.2 W at a repetition rate ∼ 42.7 kHz.     

Single-mode high-peak-power passively Q-switched diode-pumped Nd:YAG laser

We have demonstrated an efficient, compact, passively Q-switched single-mode diode-pumped Nd:YAG laser that uses Cr(4+):YAG as a saturable absorber. Linear- and ring-cavity configurations were demonstrated. Pulse energies and widths were, respectively, 1.5mJ and 3.9ns for the linear cavity and 2.1mJ and 12ns for the ring cavity.     

Diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser with a carbon nanotube saturable absorber

A diode end-pumped passively Q-switched Nd:YVO₄ laser with a transmission-type single-walled carbon nanotube saturable absorber is first demonstrated in this paper. The maximum continuous wave (CW) output power of 477 mW is obtained at the incident pump power of 1490 mW with the output transmission T = 10%, resulting in slope efficiency of 41.3%. For Q-switching operation, the measured pulse duration of 332 ns, the pulse energy of 326 nJ and the peak power of 982 mW are respectively obtained.     

Diode-pumped Nd:YAG ceramic laser at 946 nm passively Q-switched with a Cr4+:YAG saturable absorber

We demonstrate a diode-pumped Nd:YAG ceramic laser with emission at 946 nm that is passively Q-switched by single-crystal Cr⁴⁺:YAG saturable absorber. An average output power of 1.7 W is measured under 18.4 W of incident power using an output mirror with transmission T=4%. The corresponding optical-to-optical efficiency is 9.2%. The laser runs at a pulse repetition rate of 120 kHz and delivers pulses with energy of 14 μJ and duration of 80 ns, which corresponds to a peak power of 175 W.